利用InP外延发射技术制备长波长QEICs

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147350

I. Pollentier, P. Demeester, P. van Daele, D. Rondi, G. Glastre, A. Enard, R. Blondeau

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引用次数: 2

摘要

讨论了利用外延提升(ELO)技术将GaAs MESFET电路与InP元件集成。描述了特定的ELO问题(薄膜-衬底隔离、对准)和解决方案，以及在InP上集成mesfet的各种方法。提出了一种将GaAs ELO MESFET与inp2 *2埋地波导光开关(全互连油芯片)集成在一起的长波OEIC的制造方法。

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Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology

The integration of GaAs MESFET circuits with InP components using epitaxial lift-off (ELO) technology is discussed. Specific ELO problems (film-substrate isolation, alignment) and solutions as well as the various ways to integrate MESFETs on InP are described. The fabrication of a long wavelength OEIC, in which a GaAs ELO MESFET is integrated with an InP 2*2 buried waveguide optical switch (fully interconnected oil chip), is presented.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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