InGaAs/InP量子阱热稳定性和互扩散的RTA研究——InGaAs帽层的影响

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147449

J. Oshinowo, A. Forchel, D. Grutzmacher, M. Stollenwerk

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引用次数: 3

摘要

研究了不同顶势垒组成的InGaAs/InP量子阱在600 ~ 950℃(退火时间1 min)条件下的热稳定性。用光致发光光谱法评价了热互扩散效应。根据发光能位移的温度依赖性，确定了相互扩散系数和活化能

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RTA study of thermal stability and interdiffusion of InGaAs/InP quantum wells-the influence of InGaAs cap layers

A study of the thermal stability of InGaAs/InP quantum wells with different top barrier compositions that used rapid thermal annealing at temperatures between 600 degrees C and 950 degrees C (annealing time 1 min) is discussed. The thermal interdiffusion effects were evaluated by photoluminescence spectroscopy. From the temperature dependence of the luminescence energy shifts the interdiffusion coefficients and activation energies are determined.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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