InP的EC-V谱分析

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147360

M. Faur, C. Vargas, M. Goradia

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引用次数: 2

摘要

p, n, p/sup +/和n/sup +/液体封装的chzochralski (LEC)或VGE生长在p衬底的电化学电流-电压谱。本文描述了热扩散的n/sup +/p和p/sup +/n，以及使用一种称为FAP的电解质外延生长的n/sup +/p InP结构。研究发现，在高达0.3 mA/cm/sup /的电流密度下，FAP电解质在执行InP的精确EC-V分析方面，本质上优于先前报道的电解质(0.5 M HCl和Pear蚀刻液)。

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EC-V profiling of InP

The electrochemical current-voltage profiling of p, n, p/sup +/, and n/sup +/ liquid encapsulated Czochralski (LEC) or VGE grown InP substrates. thermally diffused n/sup +/p and p/sup +/n, and epitaxially grown n/sup +/p InP structures using an electrolyte called FAP is described. It found that the FAP electrolyte is inherently superior to previously reported electrolytes (0.5 M HCl and the Pear etch) for performing accurate EC-V profiling of InP at current densities of up to 0.3 mA/cm/sup 2/.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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