2008 International Conference on Electronic Packaging Technology & High Density Packaging最新文献_第2页

Moisture absorption and void growing effects on failure of electronic packaging 吸湿和空隙生长对电子封装失效的影响

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607128

Zhao Zhendong, L. Zhigang, Zhang Yu, Shu Xuefeng

引用次数: 0

Optimization of hierarchical SOC test time based on genetic algorithm 基于遗传算法的分层SOC测试时间优化

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607021

Li Jiao, Zhang Jinyi, Shi Hui, L. Wei

引用次数: 0

Wafer level LED packaging with integrated DRIE trenches for encapsulation 晶圆级LED封装，集成DRIE沟槽封装

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607038

Rong Zhang, S. Lee

引用次数: 28

A study of fluid coolant with carbon nanotube suspension for microchannel coolers 微通道冷却器用碳纳米管悬浮液的研究

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607042

Yi Fan, Yifeng Fu, Yan Zhang, Teng Wang, Xiaojing Wang, Z. Cheng, J. Liu

引用次数: 1

Thermo-mechanical analysis of a wafer level packaging by induction heating 感应加热晶圆级封装的热力学分析

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4606963

Wenming Liu, Mingxiang Chen, Yanyan Xi, Changyong Lin, Sheng Liu

{"title":"Thermo-mechanical analysis of a wafer level packaging by induction heating","authors":"Wenming Liu, Mingxiang Chen, Yanyan Xi, Changyong Lin, Sheng Liu","doi":"10.1109/ICEPT.2008.4606963","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4606963","url":null,"abstract":"In this paper, a non-linear and one-directional coupled finite element framework has been implemented to simulate induction heating process of wafer-level packaging. Based on numerical results of induction heating, thermally-caused warpages and stresses of the single-sided ceramic wafer have been evaluated. Some primary experiments have also been conducted to verify the numerical method. Using three-dimensional models, the temperature distribution, thermally-caused warpages and stress in the single-sided ceramic wafer subjected to induction heating can be clearly defined. In addition, the temperature-dependent material properties are considered in the modeling. From the finite element analysis, it is found that the induction heating is selective, that is, the temperature in the wafer is lower than that of Cu-loops during the induction heating process; the temperature variation on the Cu-loops, as well as the difference of the temperature between the Cu-loops and the wafer is related with the wafer material properties; the maximum thermal-stresses caused by the induced Joule heating occur on the middle-edge areas of the single-sided ceramic wafer. On the other hand, in order to prove the soundness of the framework established in this paper, the test results obtained by infrared radiometer are compared to that achieved from the proposed numerical analysis method. It is shown that the temperature variation and locations of initial cracks caused by thermal-stresses during the induction heating are in a good agreement with those obtained from the test.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"33 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74988434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Study of interface reliability in QFN device under hygro-thermal environment 湿热环境下QFN器件界面可靠性研究

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607146

Ting-biao Jiang, Hong-mi Nong, C. Du

{"title":"Study of interface reliability in QFN device under hygro-thermal environment","authors":"Ting-biao Jiang, Hong-mi Nong, C. Du","doi":"10.1109/ICEPT.2008.4607146","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607146","url":null,"abstract":"The interface crack caused by moisture absorption is a main reason for the failure of plastic packaging electronic devices. According to the failure of interface cracks in QFN plastic packaging devices caused by hygro-thermal environment, the paper combining with finite element method (FEM), carried on the research by moisture absorption experiment, lead-free reflow soldering experiment, high temperature tidal thermal experiment, and scanning electron microscope (SEM) experiment. The results of study show that: non-moisture absorption devices seldom produce cracks after the lead-free reflow soldering, and moisture absorption devices donpsilat produce any crack during absorbing moisture, but they easily produce cracks after lead-free reflow soldering; The cracks produced by the experiment mainly lay on the interface between die-attach material (DA) and the chip, and the cracks at the junction of chip, DA material and epoxy molding compound material (EMC) have the greatest damage; The position and the expansion direction of cracks are closely related to the characteristic and the interface intensity of the two connecting materials. These conclusions have important practical significance to the study and the evaluation criterion of crack.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"11 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75573380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Productivity improvement of stack package line through die bonding process & scheme optimization 通过模具粘接工艺提高堆叠封装生产线的生产效率及方案优化

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607110

Xing Jin, M. Li

{"title":"Productivity improvement of stack package line through die bonding process & scheme optimization","authors":"Xing Jin, M. Li","doi":"10.1109/ICEPT.2008.4607110","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607110","url":null,"abstract":"To conform to the ever-emerging market demand, stacked memory devices have been more widely utilized. The stacking method also reduces the cost of electronical components through the way that stacking could fully utilize currently on-hand equipment without any new investment. While, starting from late 2003, flash memory manufacturers begin experience capacity degradation, specifically with multiple loop-back workflows induced by stack CSP devices. By analyzing the process of stacking, the industrypsilas practice considers the control of assembly cost largely depends on the improvement of overall line productivity, specifically the critical bottle-neck area of die bonding. This presentation intends to critically describe the methodology and procedures used by Intelpsilas stack CSP assembly factory, which finally results innovative projects targeting above said productivity improvements. The authors use TRIZ, an inventive problem solving theory and application tool, to analyze and abstract the major contradictions and then sketch out possible solutions. As a result of the applications, the overall stack CSP assembly factorypsilas productivity increased to a record-high of 340%, far above the industry average, and supports Intelpsilas stack CSP assembly factory more efficient than benchmarking world-class companies ever since. The authors of this paper wishes the methodology on productivity and design flexibility at Intelpsilas stack CSP assembly factory could possibly be proliferated, so as to help achieve productivity and capability maximum output throughout the industry.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"655 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74739928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

MCM interconnect test scheme based on adaptive genetic algorithm 基于自适应遗传算法的MCM互连测试方案

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607156

Chen Lei

引用次数: 0

Nano-thermal interface material with CNT nano-particles for heat dissipation application 纳米热界面材料与碳纳米管纳米颗粒的散热应用

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607085

Li Xu, Cong Yue, J. Liu, Yan Zhang, Xiuzhen Lu, Z. Cheng

引用次数: 2

In-situ observation on electrochemical migration of lead-free solder joints under water drop test 水滴试验下无铅焊点电化学迁移的现场观察

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607147

Y.H. Xia, W. Jillek, E. Schmitt

引用次数: 5