2008 International Conference on Electronic Packaging Technology & High Density Packaging最新文献

Evaluate anti-shock property of solder bumps by impact test 通过冲击试验评估焊料凸点的抗冲击性能

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-08-22 DOI: 10.1109/ICEPT.2008.4607126

H. Xi, Minyi Lou, B. An, Fengshun Wu, Yiping Wu

引用次数: 0

The effect of the different teflon films on anisotropic conductive adhesive film (ACF) bonding 不同聚四氟乙烯薄膜对各向异性导电胶膜(ACF)粘接的影响

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607160

Jun Zhang, Y. Lin, Liugang Huang

{"title":"The effect of the different teflon films on anisotropic conductive adhesive film (ACF) bonding","authors":"Jun Zhang, Y. Lin, Liugang Huang","doi":"10.1109/ICEPT.2008.4607160","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607160","url":null,"abstract":"New interconnect materials are always necessary as a result of evolving packaging technologies and increasing performance and environmental demands on electronic systems. Polymer-based conductive-adhesive materials have become widely used in many electronic packaging interconnect applications. Among all the conductive-adhesive materials, the anisotropic conductive adhesives (ACA) (or anisotropic conductive adhesive films, ACF) have gained popularity as a potential replacement for solder interconnects. For ACF interconnection, thermo-compression (T/C) bonding is the most common method. In this study, the effects of the some important processing parameters, including the increasing rate of bonding temperature and different Teflon films, on the reliability of the ACF joints were investigated. Results show that the performances of the ACF joints were affected by the distribution of conductive particles and the curing degree of the ACF, which was determined by the bonding temperature ramp rates. The bonding strengths of ACF joints are different for the different Teflon filmpsilas thickness and kinds.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74363025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A March-CL test for interconnection faults of SOC SOC互连故障的3 - cl测试

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607018

Zhang Jinyi, Yang Xiaodong, Yang Yi, Zhang Dong, Dong Hui

引用次数: 0

The reliability study of sub 100 microns SnAg flip chip solder bump on FR4 substrate under thermal cycling 热循环条件下FR4衬底上亚100微米SnAg倒装片焊点的可靠性研究

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607148

Xiaoqin Lin, L. Luo

引用次数: 3

The effects of Ni nanoparticles addition on shear behavior and microstructure of Sn-Ag Lead-free solder Ni纳米颗粒对Sn-Ag无铅焊料剪切性能和显微组织的影响

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607054

Fangjuan Qi, Li Sun, Zhezhe Hou, Jianqiang Wang, C. Qin

引用次数: 2

Effects of phosphor’s thickness and concentration on performance of white LEDs 荧光粉厚度和浓度对白光led性能的影响

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607005

Zongyuan Liu, Sheng Liu, Kai Wang, Xiaobing Luo

引用次数: 3

Failure mode analysis of lead-free solder joints under differential reflow profiles by high speed impact testing 用高速冲击试验分析不同回流工况下无铅焊点的失效模式

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607136

C.Y. Lin, Y. Chen, G. Shen, D. Liu, C. Kuo, C.L. Hsu

{"title":"Failure mode analysis of lead-free solder joints under differential reflow profiles by high speed impact testing","authors":"C.Y. Lin, Y. Chen, G. Shen, D. Liu, C. Kuo, C.L. Hsu","doi":"10.1109/ICEPT.2008.4607136","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607136","url":null,"abstract":"The aim of this research is to investigate the mechanical behavior of lead-free solder for high speed impact. A high speed impact test was set up to measure the solder joint reliability. Differential impact speed and room temperature aging effect has been studied with Ni/Au substrate. Furthermore, two different solder alloys (96.5Sn-3Ag-0.5Cu, 98.5Sn-1Ag-0.5C) and three different reflow profiles are considered. This paper focuses on failure mode analysis and investigates the failure characteristics of lead-free solder joints, 96.5Sn-3Ag-0.5Cu and 98.5Sn-1Ag- 0.5C, which are aging at room temperature, respectively, then those solder are impacted at shear rates of 0.3 m/s and 1.0 m/s. Four types of failure mode are found in this high speed impact testing result. Mode M1 is the fracture around the interface but not remain the solder on pad. Mode M2 is fracture around the interface and remained the solder on pad. Mode M3 is fracture across the solder ball. Mode M4 is fracture on the substrate with lift the pad. The aging time could increase the interfacial strength, therefore the percentage of M3 and M4 mode failures increases in Ni/Au substrate. According the results, we find that in reflow profile A and reflow profile C, the failure percentage of Mode M2 is increasing; in reflow profile B, the failure percentage of Mode M3 and Mode M4 are large than Mode M1 and Mode M2.The failure mode M2 is the majority in solder alloy 96.5Sn-3Ag- 0.5Cu, and the failure mode M2 and M3 are the majority in solder alloy 98.5Sn-1Ag-0.5C.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"30 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87103609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A novel high effective envelope-tracking amplifier for OFDM systems 一种新型的高效OFDM系统包络跟踪放大器

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4607026

Yingliang Li, Jide-Zhao

{"title":"A novel high effective envelope-tracking amplifier for OFDM systems","authors":"Yingliang Li, Jide-Zhao","doi":"10.1109/ICEPT.2008.4607026","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4607026","url":null,"abstract":"OFDM (orthogonal frequency division multiplex) mobile communication system is so popular in recent because it has so many virtues as effective frequency spectrum, wide-band, high speed rate, etc. But it has so many challenges in technical field, such as the high efficiency of PA (power amplifier) and linearity. RF (radio frequency) amplifier with ET (envelop-tracing) structure is described for OFDM systems in this paper. The first study the ET amplifier model, and then a high-efficiency OFDM amplifier is presented with GaN HEMT (heterostrucutre field-effect transistors), and includes the theoretic analysis and circuit design. Finally, the design circuit is simulated by ADS (advanced design systems) software, and gets the average DE (drains efficiency) of the amplifier is as high as 50% for an OFDM (Wimax) modulated signal with EVM of 2.94% at an average output power of 50 W and gain of 13.0 dB from simulating result. The design has good efficiency and linearity. All of these performances are satisfied with the OFDM systempsilas requirement of RF. This design may be applied for the OFDM systems compare with the standard of OFDM.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"16 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89132220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

High speed package design and electrical performance analysis 高速封装设计及电气性能分析

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4606973

Shu-Qiang Zhang, Hung-Hsiang Cheng, Yin-Guang Zheng, Chang-Lin Yeh

{"title":"High speed package design and electrical performance analysis","authors":"Shu-Qiang Zhang, Hung-Hsiang Cheng, Yin-Guang Zheng, Chang-Lin Yeh","doi":"10.1109/ICEPT.2008.4606973","DOIUrl":"https://doi.org/10.1109/ICEPT.2008.4606973","url":null,"abstract":"More and more high-speed data transmission formats such as rapid IO, hyper transport, Gigabit Ethernet, Serial ATA etc. are becoming prevalent. As substrate interconnection density and channel data rate are getting increasingly higher, various 3D effects, crosstalk, and discontinuity - induced ISI are playing a much more important role, for both signal channels and power distribution networks . The substrate interconnection structures are becoming the major bandwidth constraint for most of the package designer. As data rates continue to increase, transitioning to solder bump or Au stud bump flip-chip interconnects or low-loss substrate materials results in excessive cost. It is therefore increasingly important to provide a high performance and low-cost packaging solution. The aim of this paper is to proposal a design solution of normal plastic ball grid array (PBGA) package for high speed devices. The electrical simulation method of the effects of variation of package design parameters such as signal path structure, wire bonding, through hole via, ball placement tactic and plating stub are highlighted. The conclusion of this paper is recommendation for high-speed package electrical design.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"53 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84707920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Dynamic bending tests and numerical simulation of board level electronic package 板级电子封装动态弯曲试验及数值模拟

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI: 10.1109/ICEPT.2008.4606969

Q. Fei, Wang Yngve, Liu Bin, An Tong, J. Ling

引用次数: 2