Journal of Electronic Materials最新文献

{"title":"Synthesis and Characterization of Sn-Doped CuO Thin Films for Gas Sensor Toward H2S Gas Sensing","authors":"Jyoti, Rajesh Kumar, Ashok Kumar","doi":"10.1007/s11664-024-11404-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11404-2","url":null,"abstract":"<p>In this work, thin films of CuO doped with 3% SnCl₂ (0.97 g CuO-0.03 g SnCl₂) were deposited on glass substrates using a sol–gel spin coating technique. The deposited thin films were annealed in a muffle furnace at 400°C for 2 h. UV–visible spectroscopy, a two-probe setup, and x-ray diffraction were utilized to analyze the optical, electrical, and structural properties, respectively. The optical bandgap of the doped films was identified within the range of 3.7–3.83 eV. Electrical investigation performed by the two-probe setup revealed that the prepared samples were ohmic in nature. It was found that the resistivity of the samples varied from 11.86 Ω·m to 6.04 Ω·m as the thickness of films increased from 165 nm to 570 nm. The gas-sensing properties of the prepared films were assessed at different operational temperatures and for varying concentrations of hydrogen sulfide gas. From the obtained data, it was observed that SnCl₂-doped CuO thin films show excellent response toward H₂S gas at room temperature.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Up-Conversion Luminescence and Optical Temperature-Sensing Properties of Yb3+ and Er3+ Co-doped Yttrium Aluminum Garnet Phosphor","authors":"Jiahao Zha, Chongjun He, Fangzhou Chen, Hongwei Wang, Biao Dong, Lijuan Liu, Mingjun Xia, Chenguang Deng, Qian Li, Yuangang Lu, Huiting Chen, Siguo Liu","doi":"10.1007/s11664-024-11428-8","DOIUrl":"https://doi.org/10.1007/s11664-024-11428-8","url":null,"abstract":"<p>Fluorescence intensity ratio (FIR) technology is compulsorily needed in non-contact rare-earth luminescent temperature sensors. Here, we present Er/Yb:Y₃Al₅O₁₂ phosphors synthesized via a high-temperature solid-state reaction method. The crystal structure, microstructure, up-conversion luminescence, and energy transfer between the two ions have been comprehensively analyzed. Under 980-nm excitation, the samples exhibited four distinct transition bands at 475 nm, 525 nm, 546 nm, and 664 nm. The quantum efficiency reached 12.14%. Utilizing the thermally coupled level of I₅₂₅/I₅₄₆ as a basis for analysis yields a maximum relative sensitivity of 1.05% K⁻¹. We observed that the spectral color coordinates varied linearly with temperature within a specific range, suggesting its potential application as a means of temperature measurement. Furthermore, employing the non-thermally coupled levels of I₅₄₆/I₄₇₅ for temperature measurement results in an impressive maximum absolute sensitivity of 8.05% K⁻¹, nearly 24 times higher than that achieved through thermally coupled levels alone. The temperature resolution of the synthetic material is basically less than 0.3 K with high thermal stability. Therefore, Er/Yb:Y₃Al₅O₁₂ phosphors hold promise as viable candidates for components in temperature-sensor applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Development of an IoT-Based Embedded System for Continuous Monitoring of Vital Signs","authors":"P. N. S. B. S. V. Prasad, Syed Ali Hussain, Pavankalyan Thotakura, Pradyut Kumar Sanki","doi":"10.1007/s11664-024-11368-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11368-3","url":null,"abstract":"<p>The rapid development of Internet of Things (IoT) technology is driving a transformation in the healthcare sector. This paradigm change provides new opportunities for real-time, ongoing physical parameter monitoring, particularly in remote situations, providing an ideal setting for research and development. IoT device deployment has become widespread, enabling the growth of an automated data exchange ecosystem. However, our capacity to carry out remote monitoring has been constrained by our past dependence on specialized electronic equipment for assessing vital signs such as heart rate (beats per minute [BPM]) and oxygen saturation (SpO2). To address this issue, we developed an innovative technology that makes use of internet connectivity to allow for remote vital sign measurement and monitoring. The main focus of this article is the use of IoT technology to measure and track vital physiological indicators, notably heart rate and oxygen saturation, regardless of a person’s location. In addition, our study aims to create a system that can send out real-time notifications in the event of serious medical emergencies, increasing the likelihood that life-saving actions can be taken in a timely manner.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of the Contribution of Minority Carriers to the Thermo-electromotive Force of Thermoelectric Generators in the Case Where the Electrical Conductivity of the Majority Carriers Remains Very Large Compared to that of the Minority Carriers","authors":"André Siewe Kamegni, Igor Lashkevych","doi":"10.1007/s11664-024-11366-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11366-5","url":null,"abstract":"<p>A theoretical prediction of the contribution to the thermo-electromotive force (thermo-EMF) of a thermocouple due to the minority charge carriers in both legs is presented. This prediction is made on the assumption that, at any time, the electrical conductivity of the majority charge carriers <span>(sigma _M)</span> remains very large compared to the electrical conductivity of the minority carriers <span>(sigma _m)</span> (<span>(sigma _Mgg sigma _m)</span>). The expression has also been analyzed in order to find strategies to reduce its negative impact on the thermo-EMF of the thermocouple. Finally, calculations were carried out in the case of the thermocouple made of silicon thermoelements. The results show that the presence of minority carriers in the thermocouple legs can either positively or negatively affect the generated thermo-EMF. Whenever the contribution is negative, its magnitude may be reduced by widening the bandgap of the <i>N</i>-type leg and/or narrowing that of the <i>p</i>-type leg, adjusting the length of the legs, or intensifying recombinations on the surfaces of the <i>P</i>-type leg</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Biaxial Strain on Structural, Electronic, and Thermal Transport Properties of Twin Graphene: A Comparative Study with γ-graphyne","authors":"Wentao Li","doi":"10.1007/s11664-024-11429-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11429-7","url":null,"abstract":"<p>The existence of a variety of two-dimensional (2D) carbon allotropes with different carbon frameworks has provided an unprecedented platform to explore novel properties and potential applications beyond graphene. In this work, the strain effects on the structural, electronic, and thermal transport properties of the <i>γ</i>-graphyne and twin graphene sheets have been systematically clarified through first-principles calculations. Regardless of the geometrical similarities of the two considered 2D carbon allotropes, our results indicate that the acetylenic linkages in the <i>γ</i>-graphyne and the AA-stacked aromatic rings in the twin graphene are capable of resulting in the notable deviations in their electronic and thermal transport properties, as well as the strain-dependent behaviors. Both of the two sheets possess an intrinsic semiconducting nature with a tunable direct bandgap that depends on the biaxial strains. The thermal conductivity of the <i>γ</i>-graphyne is significantly suppressed compared to the twin graphene counterpart. Moreover, the heat transfer of the two sheets can be further enhanced by the tensile strains, and a dramatic increase can be obtained in the strained <i>γ</i>-graphyne sheet. Thus, the effectively tunable electronic and thermal transport properties revealed in this work imply the great potential of the two 2D carbon allotropes, and the comparative study also uncovers the structural effect of the carbon networks on their novel properties and strain responses.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Treatment Time on the Synthesis of Copper Oxide Semiconductor Films by Cathode Cage Plasma Deposition","authors":"Júlio Fernando Sousa de Carvalho, Renan Matos Monção, Ediones Maciel de Sousa, Cleânio da Luz Lima, Carla Laize dos Santos Cruz Costa, Ramón Raudel Pena Garcia, Michelle Cequeira Feitor, Thércio Henrique de Carvalho Costa, Maxwell Santana Libório, Rômulo Ribeiro Magalhães de Sousa","doi":"10.1007/s11664-024-11427-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11427-9","url":null,"abstract":"<p>Due to its elemental abundance, nontoxic nature, and suitable optical-electrical properties, copper oxide is a valuable <i>p</i>-type semiconductor for photovoltaic (PV) applications. However, synthesizing copper oxide films for PV devices with a band gap close to the Shockley–Queisser limit (1.4 eV) using a one-step deposition process is important for maximum efficiency and synthesis simplification. In this work, cathodic cage plasma deposition (CCPD) of copper oxide (CuO + Cu₂O) films on glass was performed to evaluate the microstructural, morphological, chemical, and band gap changes as a function of treatment time (2 h, 3 h, 4 h, and 5 h). The samples were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and Raman spectroscopy to identify the morphology, chemical composition, and crystalline phases of the deposited films, and diffuse reflectance spectroscopy was used to calculate the band gap width. The films showed characteristics of absorbing material in the visible region with band gap values from 1.43 eV to 1.5 eV. However, the sample treated for 3 h had a compact coating with a thickness of 1.46 µm and band gap energy of 1.43 eV, showing the applicability of the CCPD technique for synthesizing copper oxide absorber layers with an optimum band gap in a single deposition step.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Magnetic, Dielectric, and Ferroelectric Properties of CoFe2O4-BaTiO3 Nanocomposites","authors":"Nidhi Sheoran, Sourabh Sharma, Mukesh Sheoran, Vinod Kumar, Ashok Kumar, O. P. Thakur","doi":"10.1007/s11664-024-11419-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11419-9","url":null,"abstract":"<p>Nano-size spinel ferrite CoFe₂O₄ (CFO), ferroelectric BaTiO₃ (BTO), and their nanocomposites BTO@CFO (BTO nanoparticles are added during the synthesis of CFO) and CFO@BTO (CFO nanoparticles are added during the synthesis of BTO) were synthesized using a combination of chemical co-precipitation and sol–gel routes, respectively. The phase formation and crystallinity of the bare CFO and BTO and their nanocomposites were verified via x-ray diffraction (XRD) patterns. High-resolution transmission electron microscopy (HRTEM) revealed the formation of the nanocomposites. Magnetization measurements confirmed the ferromagnetic behavior of all the samples except BTO, in which superposition of a weak ferromagnetic and diamagnetic response occurred due to its nanostructure. Magnetization versus temperature (<i>M</i>–<i>T</i> plot) measurements showed an anomaly near the ferroelectric-to-paraelectric phase transition of BTO. Also, the dielectric constant (<i>ε</i>′) and loss tangent (tan<i>δ</i>) with respect to frequency (10²–10⁶ Hz) and temperature (300–700 K) were examined. The <i>ε</i>′–<i>T</i> curve of the nanocomposites exhibited an anomaly at the same temperature as observed in the <i>M</i>–<i>T</i> plot, indicating the inherent magnetoelectric coupling in the nanocomposites. The energy storage properties of BTO and the nanocomposites were examined via <i>P</i>–<i>E</i> loop analysis and confirmed that the CFO@BTO sample exhibits maximum energy storage efficiency.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and Optical-Electronic Characterization of Nickel Pyro-Vanadate A2NiV2O7 (A = Na, Ag) Semiconductors: Experimental, DFT, and Hybrid-DFT Approaches","authors":"Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji","doi":"10.1007/s11664-024-11408-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11408-y","url":null,"abstract":"<p>Semiconductors, with their exceptional properties, have diverse applications across fields such as photovoltaics, sensing, and catalysis. In the present study, nickel pyro-vanadate compounds of high purity and homogeneity, with the chemical formula A₂NiV₂O₇ (where <i>A</i> = Na, Ag), were synthesized under precisely controlled stoichiometric conditions. The primary focus is to investigate the optical and electronic properties of these compounds using a combination of experimental techniques and theoretical modeling. Initially, insights into the chemical structure and morphology of the synthesized semiconductor were obtained through powder x-ray diffraction (PXRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A₂NiV₂O₇ were found to be homogeneous, crystalline in nature, and isotypic with Κ₂CoV₂O₇, exhibiting alternating layers of NiV₂O₇ and Ag/Na. Moreover, absorption spectra obtained from UV–Vis diffuse reflectance spectroscopy (DRS) showed direct optical bandgaps of 1.83 eV for Na₂NiV₂O₇ and 1.92 eV for Ag₂NiV₂O₇, affirming their semiconductor properties. Further characterization was performed using density functional theory (DFT) and hybrid-DFT methods. These advanced techniques provide detailed understanding of the electronic structure and properties across different sodium–silver ratios. The computed electronic structures demonstrate the separation of the conduction band (CB) and valence band (VB) around the Fermi level, with bandgaps of 0.44 eV and 1.76 eV for Na₂NiV₂O₇, and 0.56 eV and 1.60 eV for Ag₂NiV₂O₇, as determined using the Perdew–Burke–Ernzerhof (PBE) and DFT+U methods, respectively. This comprehensive investigation offers valuable insights into the optical and electronic dynamics of nickel pyro-vanadate compounds, establishing a foundation for their potential applications in various fields, including optoelectronics, photocatalysis, and energy storage.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"52 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoluminescence Characteristics of Post-annealed Cu2O Thin Films","authors":"Chin-Hau Chia, Shih-Hao Su, Yu-Min Hu, Jau-Wern Chiou, Chin-Chung Yu, Sheng-Rui Jian","doi":"10.1007/s11664-024-11416-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11416-y","url":null,"abstract":"<p>Cuprous oxide (Cu₂O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO₂). Reduction and oxidation of oxygen were found in thin films annealed under PO₂ of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu₂O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO₂ of 0.3 Pa and 0.7 Pa, Cu₂O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu₂O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Spin Speed on the Physical Characteristics of CuO Films Synthesized by Sol–Gel Spin Coating for H2S Gas Sensing","authors":"Jyoti, Rajesh Kumar","doi":"10.1007/s11664-024-11411-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11411-3","url":null,"abstract":"<p>In this paper, we study the effects of spinning speed on the electrical, optical, structural, morphological, and gas sensing properties of thin films deposited on glass substrates by sol–gel spin coating, using copper acetate dihydrate as the precursor. The deposition of the films was carried out at varying spinning speeds from 1500 rpm to 2500 rpm to achieve different thicknesses ranging from 157 nm to 470 nm, respectively. The results revealed that the resistivity of the films decreased from 75.5 Ω·m to 42.5 Ω·m with the decrease in spinning speed. X-ray diffraction (XRD) studies demonstrated that the crystallite size varied in the range of 18.14–27.48 nm. The band gap of the samples was found to vary from 2 eV to 1.69 eV, revealing that these samples were suitable for gas sensing applications. Field-emission scanning microscopy (FESEM) studies showed that the prepared samples were porous in nature and were suitable for H₂S gas detection. The films were examined at different operating temperatures with different concentrations of H₂S gas. The results showed that the response toward hydrogen sulfide gas varied with varying thickness of the samples. The CuO thin films showed the highest response toward hydrogen sulfide gas at a temperature of 25°C.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}