Journal of Electronic Materials最新文献

{"title":"Small-Molecule Host-Dopant Based on Naphthalene Indenofluorene Unit for Solution-Processed Blue OLEDs","authors":"Weiji Feng,&nbsp;Guohong Cui,&nbsp;Liwen Hu,&nbsp;Feng Peng,&nbsp;Jin Xu,&nbsp;Mingke Li,&nbsp;Lei Ying,&nbsp;Zhiming Zhong,&nbsp;Zhenzhong Sun","doi":"10.1007/s11664-026-12727-y","DOIUrl":"10.1007/s11664-026-12727-y","url":null,"abstract":"<div><p>Solution-processed blue organic light-emitting diodes (OLEDs) based on polycyclic aromatic hydrocarbon face challenges in achieving high efficiency and color purity. We designed a novel host-dopant system featuring a naphthalene indenofluorene (NIF) building block, comprising blue emitter NIF-<i>p</i>-TPA and host material NIF-<i>m</i>-PCz. The two asymmetric molecules exhibited good solubility in chlorobenzene and miscibility in their blend films. By combining cross-linkable hole-transport and alcohol-soluble electron-transport function layers, solution-processed OLEDs with doped and non-doped emission layers were fabricated. The optimized device achieved current efficiency of 3.20 cd A⁻¹ and Commission Internationale de l’Eclairage (CIE) coordinates of (0.15, 0.12) at a doping ratio of NIF-<i>m</i>-PCz:NIF-<i>p</i>-TPA = 90:10 wt/wt. This work demonstrates a practical approach to solution-processed deep-blue OLEDs using carefully designed polycyclic aromatic systems.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3748 - 3757"},"PeriodicalIF":2.5,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and Characterization of P-type Ca2.5Ag0.3Er0.2Co4O9 Semiconducting Materials for Thermoelectric Generators","authors":"Enes Kilinc,&nbsp;Fatih Uysal,&nbsp;Mucahit Abdullah Sari,&nbsp;Huseyin Kurt,&nbsp;Erdal Celik","doi":"10.1007/s11664-026-12728-x","DOIUrl":"10.1007/s11664-026-12728-x","url":null,"abstract":"<div><p><i>P</i>-type Ca_2.5Ag_0.3Er_0.2Co₄O₉ ceramic materials were synthesized using the sol–gel method and characterized for their thermoelectric properties. The phase formation and structural integrity were confirmed using thermogravimetry–differential thermal analysis (TG-DTA), Fourier-transform infrared spectroscopy (FTIR), and x-ray diffraction (XRD). Microstructural analysis via scanning electron microscopy (SEM) revealed a well-densified grain morphology, while x-ray photoelectron spectroscopy (XPS) provided insights into the oxidation states of constituent elements. The thermoelectric performance was evaluated by measuring the Seebeck coefficient, electrical resistivity, and power factor over a range of temperatures. The optimized Ca_2.5Ag_0.3Er_0.2Co₄O₉ composition exhibited enhanced thermoelectric properties due to improved carrier transport and phonon scattering effects induced by Er and Ag doping. These results suggest the potential of Ca_2.5Ag_0.3Er_0.2Co₄O₉ as a promising candidate for high-temperature thermoelectric generators in waste heat recovery applications, particularly in aerospace environments.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3449 - 3460"},"PeriodicalIF":2.5,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-026-12728-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-Regulating Electrochromic Windows: A State-of-the-Art Review of Energy-Autonomous Systems","authors":"B. Aadinarayanan,&nbsp;Balasubramanian Kandasubramanian","doi":"10.1007/s11664-026-12720-5","DOIUrl":"10.1007/s11664-026-12720-5","url":null,"abstract":"<div><p>Energy-efficient technologies, particularly electrochromic devices (ECDs), have shown significant potential for use in smart window applications. These devices can effectively modulate optical properties, including transmittance and color, at low voltage. This review discusses the structure and working principles of ECDs, as well as their material components. Key elements include electrochromic (EC) films, such as tungsten oxide (WO₃), which achieve 73.1% optical modulation and a coloration efficiency of 70.5 cm²/C. Additionally, transparent conducting electrodes, like silver (Ag) nanowires, offer 85% transmittance at a wavelength of 550 nm and have a resistance of 30 Ω/sq. Furthermore, the electrolytes used in these devices include quasi-solid PVA-H₂SO₄ systems with an ionic conductivity of 285.5 mS/cm. Highlighted automation approaches include integration with luminescent solar concentrators (Solar Energy 231:857–879, 2022), as reported by A. Purabgola (<i>Thin films for planar solar cells of organic-inorganic perovskite composites. In hybrid perovskite composite materials</i>, Woodhead Publishing, UK, 2021) (LSCs) and electrochromic supercapacitors (ECSs), yielding devices with tunable visible transmittance from 36.8 to 10.2%, coloration time of 0.9 s, and energy density of 23.3 mWh/m². Another system using a dual-mode triboelectric nanogenerator (TENG) demonstrated voltage outputs up to 140 V and power densities of 130 mW/m², with the ECD switching from 53.5% to 20.9% transmittance at 695 nm. A galvanic-cell-powered flexible ECD using W₁₈O₄₉ nanowires achieved self-coloration within 14 s, with bleaching times as low as 250 s, and retained 80% contrast after 450 cycles. Photovoltaic and triboelectric-assisted configurations show self-sufficiency ratios exceeding 8:1, where harvested energy surpasses consumption for switching and sensing functions. Building-scale simulations at LBNL and NREL further confirm that EC glazing can achieve net-positive regulation, consuming less than 2 W m⁻² while reducing total building energy by 25–32% across multiple climates. The study also explores quartz as a high-stability substrate and basalt-based materials as potential solid electrolytes. These results highlight the feasibility of self-powered, durable, and high-performance ECDs for intelligent, off-grid applications. Future directions include improving NIR modulation, cycling life, and eco-friendly material integration to enable scalable deployment in sustainable architecture.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3369 - 3388"},"PeriodicalIF":2.5,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interface Engineering Enables Stable Aqueous Ammonium-Ion Batteries","authors":"Zichen Wang,&nbsp;Xiaobin Liao,&nbsp;Wei Wen","doi":"10.1007/s11664-026-12726-z","DOIUrl":"10.1007/s11664-026-12726-z","url":null,"abstract":"<div><p>The development of aqueous ammonium-ion batteries (AAIBs) is constrained by the scarcity of robust anode materials. MoO₃, featuring large ionic migration channels and high theoretical capacity, has been extensively studied as a potential host anode material for the reversible intercalation and deintercalation of NH₄⁺. However, the sluggish ionic migration kinetics, structural degradation caused by the stress of large-sized NH₄⁺ ions, and chemical corrosion in the electrolytes lead to dramatic capacity fading and short lifespan of MoO₃. Herein, we propose an interphase engineering approach to simultaneously achieve high capacity and excellent cycling stability for AAIBs by employing a concentrated 24 m NH₄CF₃SO₃ electrolyte to construct a stable solid electrolyte interface that inhibits parasitic reactions and dissolution. The strategy endows the MoO₃ anode with remarkable cyclability, retaining 73.6% of its initial capacity after 500 cycles at 25 A g⁻¹. When evaluated in full-cell configurations, our approach achieves high energy density of 80.8 Wh kg⁻¹ and outstanding durability, with 64.1% capacity retention over 4000 cycles at 20 A g⁻¹. This work offers valuable insights into the design of interface chemistry for high-performance AAIBs.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3503 - 3509"},"PeriodicalIF":2.5,"publicationDate":"2026-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of TiO2 Content on the Arc-Erosion Resistance of Ag/SnO2 Electrical Contact Materials Prepared via Mechanical Alloying-Assisted Powder Metallurgy","authors":"Serkan Biyik,&nbsp;Murat Aydin","doi":"10.1007/s11664-026-12701-8","DOIUrl":"10.1007/s11664-026-12701-8","url":null,"abstract":"<div><p>In this study, the arc-erosion performances of AgSnO₂-based electrical contact materials containing different amounts of titanium dioxide (TiO₂) were investigated using the mechanical alloying-assisted powder metallurgy method. For this purpose, composite powder synthesis was carried out through grinding experiments using a planetary ball mill, and the produced composite powders were subjected to molding and vacuum sintering processes. Subsequently, electrical wear tests were carried out under inductive loads to investigate the arc-erosion performance of composites. Scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and laser diffractometry techniques were used to characterize powders, green compacts, composites and arc-affected surfaces. The results showed that the smallest composite powder size (1.186 µm) was obtained from samples containing 7% by weight of TiO₂. Furthermore, it was determined that the green compacts containing 1% TiO₂ had the lowest porosity ratio (1.21%). In addition, the hardness values were observed to gradually increase from 82 HV to 112 HV with increasing TiO₂ content. It was also observed that the use of 5% TiO₂ improved the interfacial wettability between the matrix and reinforcement, thereby increasing the viscosity of the abraded material and reducing particle spatter. One of the key findings of the study is that, under test conditions of 220 V, 50 Hz, and 20 A, the addition of 5% TiO₂ reduced total mass losses by 46.78%.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3850 - 3867"},"PeriodicalIF":2.5,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-026-12701-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Comprehensive Analysis of the Structural, Electronic, Mechanical, Optical, and Thermophysical Properties of GaSrX3 (X = F, Cl, Br, I, and H): DFT Investigation for Energy Applications","authors":"Soukaina Bouhmaidi,&nbsp;Khidhir Alhameedi,&nbsp;Heider A. Abdulhussein,&nbsp;Asif Hosen,&nbsp;Md. Borhan Uddin,&nbsp;Waqed H. Hassan,&nbsp;Larbi Setti","doi":"10.1007/s11664-026-12713-4","DOIUrl":"10.1007/s11664-026-12713-4","url":null,"abstract":"<div><p>The development of multifunctional materials with tunable properties is vital for next generation technologies in energy, electronics, and photonics. This study presents a first-principles investigation of novel perovskite-type compounds GaSr<i>X</i>₃ (<i>X</i> = F, Cl, Br, I, H), analyzing their structural, thermodynamic, elastic, electronic, optical, and vibrational properties. All compounds adopt a cubic Pm-3m structure, with trends influenced by the halogen or hydrogen species. GaSrF₃ exhibits high mechanical rigidity (bulk modulus: 40.33 GPa), thermal stability, and a wide bandgap (4.01 eV), making it ideal for UV optoelectronics. GaSrI₃ shows the highest thermodynamic stability. All compounds are ductile and structurally resilient. Optical analyses reveal strong absorption and high refractive indices, indicating potential in photonics and photovoltaics. GaSrF₃ also displays robust lattice dynamics, while hydrogen storage evaluations show promising gravimetric (1.89 wt.%) and volumetric (51.04 g/L) capacities. These results highlight GaSr<i>X</i>₃ as versatile materials for sustainable energy, optoelectronics, and hydrogen storage applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3690 - 3706"},"PeriodicalIF":2.5,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Identifying the Optimal Thickness Range of IT-2Cl, Y6, and BTR-Cl for Ternary Layer-by-Layer Organic Solar Cells","authors":"Nithyaganeshan Thamotharan,&nbsp;Suhana Mohamed Sultan,&nbsp;Nurul Ashikin Abdul-Kadir,&nbsp;Amirjan Nawabjan","doi":"10.1007/s11664-026-12714-3","DOIUrl":"10.1007/s11664-026-12714-3","url":null,"abstract":"<div><p>Recently, researchers have been interested in ternary organic solar cells (OSCs), which improve light absorption, charge separation, and transport efficiency. Small molecule donors such as BTR-Cl and acceptors such as IT-2Cl and Y6 are recognized for their exceptional optical characteristics and well-matched energy levels, making them suitable for ternary OSC. This study aims to identify the optimal thickness range of IT-2Cl, Y6, and BTR-Cl for a ternary layer-by-layer (LbL) OSC configuration by integrating theoretical analysis, optical modeling, and electron generation rate simulations. Transmittance, absorbance, and reflectance (TAR) calculations were used to determine three distinct thickness regions, and representative thicknesses were chosen from each material region for generate rate characterization. Optical transfer matrix-based generate rate simulations using OghmaNano software provided depth-dependent electron generation data, which were analyzed for key characteristics such as maximum and average generation rates, total generation rate, and the first derivative of generate rate trends. The results identified the optimal thickness ranges as 28.4–90.2 nm for IT-2Cl, 33.4–106.2 nm for Y6, and 26.2–83.4 nm for BTR-Cl, balancing photon absorption efficiency and electron generation uniformity by correlating TAR parameters and generating rate characteristics. The findings of this work contribute to identifying optimal thickness ranges for IT-2Cl, Y6, and BTR-Cl based on their respective roles in the active layer of ternary LbL OSC, which can reduce their complexity in optimization.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3489 - 3502"},"PeriodicalIF":2.5,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-026-12714-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unravelling the Impact of Annealing Time on the Structural, Optical, Spectroscopic and Morphological Aspects of Sm-doped TiO2 Quantum Dots (QDs): A Probable Material for Optoelectronic Applications","authors":"D. Ravikumar,&nbsp;S. Sahaya Jude Dhas,&nbsp;Abdulrahman I. Almansour,&nbsp;Sivakumar Aswathappa","doi":"10.1007/s11664-026-12732-1","DOIUrl":"10.1007/s11664-026-12732-1","url":null,"abstract":"<div><p>In an assortment of light-mediated optoelectronic applications, the possibility of manipulating the bandgap in semiconductor nanostructures from ultraviolet to visible is a highly significant endeavor. In this work, Sm³⁺-doped TiO₂ quantum dots (QDs) were tailored to have a narrow bandgap by varying the annealing time. The dislocation density of the sample annealed at 350 °C for 3 h (5.67 × 10^-3 nm⁻²) is less than that of the samples annealed at 1 and 2 h (12.23 × 10^-3 nm^{− 2} and 5.74 × 10^-3 nm⁻², respectively), according to the XRD results, which demonstrate a decrease in dislocation density that is prompted by an increase in crystallite size. The TEM image of the sample of QDs that were annealed at 350 °C for 3 h shows the distribution of almost identical ultra-fine particles. Based on the TEM image, the average grain size distribution is calculated to be 4.35 ± 0.13 nm. The Sm³⁺ oxidation state of Sm atoms is indicated by a broad peak centered at 1082.35 eV in the XPS spectrum of the QDs that were annealed for 3 h at 350 °C. The reduction in luminescence intensity observed in the PL spectra of these nanoparticles is most likely caused by the long-lived carriers and efficient electron–hole separation of QDs annealed at 350 °C for 3 h. The bandgap has decreased from 3.54 eV to 3.40 eV as a result of the longer annealing period. Furthermore, after 3 h of annealing at 350 °C, Sm-doped TiO₂ exhibits a reduced optical bandgap and an elevated absorption edge value, indicating that it could be applied for the production of optoelectronic devices.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3758 - 3767"},"PeriodicalIF":2.5,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin-Dependent Recombination Pathways Revealed by Magnetoconductance in Annealed Polymer–Fullerene Bulk Heterojunction Solar Cells","authors":"Sana Smari,&nbsp;Moufid Radaoui,&nbsp;Amel Ben Fredj,&nbsp;Daniel Ayuk Mbi Egbe,&nbsp;Samir Romdhane","doi":"10.1007/s11664-026-12699-z","DOIUrl":"10.1007/s11664-026-12699-z","url":null,"abstract":"<div><p>Organic bulk heterojunction (BHJ) solar cells are strongly influenced by spin-dependent processes that govern charge separation and recombination. In this work, we investigate the current density–voltage (J–V) characteristics and magnetic field-dependent conductance (magnetoconductance, MC) of indium tin oxide (ITO)/poly(3,4 ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/AnE-PVstat:phenyl-C₆₁ butyric acid methyl ester (PCBM)/LiF/Al polymer solar cells subjected to thermal annealing between 25°C and 120°C under AM 1.5G illumination (100 <span>({text{mW cm}}^{ - 2})</span>). A positive MC response is observed at 25°C, 100°C, 105°C, and 110°C, with a maximum amplitude of 3.6%, while a clear sign reversal to negative MC emerges at 120°C. These MC variations correlate with moderate changes in power conversion efficiency (PCE), whereas the open-circuit voltage (<span>({text{V}}_{{{text{OC}}}})</span>) remains essentially unchanged, indicating that the magnetic field primarily affects spin-dependent recombination kinetics rather than the interfacial energy level alignment. To rationalize these findings, we employ a spin-dependent recombination model based on the interaction between triplet excitons and spin-1/2 charge carriers (triplet–charge interaction). Using a density matrix formalism within the stochastic Liouville framework, we demonstrate that the MC line shapes originate from the magnetic-field-induced evolution of the doublet population, energy levels, and density matrix elements of triplet–charge pairs. Our analysis shows that thermal annealing modulates the dissociation and recombination rates of these spin-dependent states, thereby linking annealing-induced morphological changes in the active layer to spin-governed recombination pathways and overall photovoltaic performance. These results establish MC as a sensitive probe of efficiency-limiting spin dynamics in organic solar cells.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3603 - 3615"},"PeriodicalIF":2.5,"publicationDate":"2026-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thickness-Dependent Opto-Structural Properties of CuBiSe2 Films","authors":"A. R. Shalaby,&nbsp;Ahmed F. Mabied,&nbsp;Mai. F. M. Hmamm,&nbsp;I. T. Zedan,&nbsp;E. M. El-Menyawy","doi":"10.1007/s11664-025-12660-6","DOIUrl":"10.1007/s11664-025-12660-6","url":null,"abstract":"<div><p>Bulk CuBiSe₂ was prepared by direct fusion of the constituent elements and was found to be thermally stable up to 620°C. X-ray photoelectron spectroscopy was used to determine the chemical composition of the synthesized CuBiSe₂, and x-ray diffraction (XRD) confirmed its polycrystalline nature. CuBiSe₂ thin films with thicknesses ranging from 30 nm to 122 nm were deposited using a thermal evaporation technique. The XRD patterns of the films exhibited a nanostructure profile. Thermogravimetric analysis (TG) revealed a crystallization temperature and melting point of 570°C and 620°C, respectively. The morphology and surface roughness of the CuBiSe₂ films were investigated using high-resolution transmission electron microscopy and atomic force microscopy. The optical functions were calculated from the transmittance and reflectance spectra of the CuBiSe₂ films, and a direct transition was found to be dominant. In addition, a single-oscillator model was found to be suitable for extracting the dispersion parameters. Overall, the results indicate that CuBiSe₂ thin films hold significant potential as effective absorber layers in optoelectronic applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3923 - 3935"},"PeriodicalIF":2.5,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-025-12660-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}