Journal of Electronic Materials最新文献

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Synthesis and Optical-Electronic Characterization of Nickel Pyro-Vanadate A2NiV2O7 (A = Na, Ag) Semiconductors: Experimental, DFT, and Hybrid-DFT Approaches 焦钒酸镍 A2NiV2O7 (A = Na, Ag) 半导体的合成与光电特性:实验、DFT 和混合DFT 方法
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11408-y
Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji
{"title":"Synthesis and Optical-Electronic Characterization of Nickel Pyro-Vanadate A2NiV2O7 (A = Na, Ag) Semiconductors: Experimental, DFT, and Hybrid-DFT Approaches","authors":"Atika Ayad, Elhassan Benhsina, Abdelqader El Guerraf, Souad El Hajjaji","doi":"10.1007/s11664-024-11408-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11408-y","url":null,"abstract":"<p>Semiconductors, with their exceptional properties, have diverse applications across fields such as photovoltaics, sensing, and catalysis. In the present study, nickel pyro-vanadate compounds of high purity and homogeneity, with the chemical formula A<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> (where <i>A</i> = Na, Ag), were synthesized under precisely controlled stoichiometric conditions. The primary focus is to investigate the optical and electronic properties of these compounds using a combination of experimental techniques and theoretical modeling. Initially, insights into the chemical structure and morphology of the synthesized semiconductor were obtained through powder x-ray diffraction (PXRD), Fourier-transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> were found to be homogeneous, crystalline in nature, and isotypic with Κ<sub>2</sub>CoV<sub>2</sub>O<sub>7</sub>, exhibiting alternating layers of NiV<sub>2</sub>O<sub>7</sub> and Ag/Na. Moreover, absorption spectra obtained from UV–Vis diffuse reflectance spectroscopy (DRS) showed direct optical bandgaps of 1.83 eV for Na<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub> and 1.92 eV for Ag<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, affirming their semiconductor properties. Further characterization was performed using density functional theory (DFT) and hybrid-DFT methods. These advanced techniques provide detailed understanding of the electronic structure and properties across different sodium–silver ratios. The computed electronic structures demonstrate the separation of the conduction band (CB) and valence band (VB) around the Fermi level, with bandgaps of 0.44 eV and 1.76 eV for Na<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, and 0.56 eV and 1.60 eV for Ag<sub>2</sub>NiV<sub>2</sub>O<sub>7</sub>, as determined using the Perdew–Burke–Ernzerhof (PBE) and DFT+U methods, respectively. This comprehensive investigation offers valuable insights into the optical and electronic dynamics of nickel pyro-vanadate compounds, establishing a foundation for their potential applications in various fields, including optoelectronics, photocatalysis, and energy storage.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Spin Speed on the Physical Characteristics of CuO Films Synthesized by Sol–Gel Spin Coating for H2S Gas Sensing 旋转速度对溶胶-凝胶旋转镀膜法合成的用于 H2S 气体传感的氧化铜薄膜物理特性的影响
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11411-3
Jyoti, Rajesh Kumar
{"title":"Effect of Spin Speed on the Physical Characteristics of CuO Films Synthesized by Sol–Gel Spin Coating for H2S Gas Sensing","authors":"Jyoti, Rajesh Kumar","doi":"10.1007/s11664-024-11411-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11411-3","url":null,"abstract":"<p>In this paper, we study the effects of spinning speed on the electrical, optical, structural, morphological, and gas sensing properties of thin films deposited on glass substrates by sol–gel spin coating, using copper acetate dihydrate as the precursor. The deposition of the films was carried out at varying spinning speeds from 1500 rpm to 2500 rpm to achieve different thicknesses ranging from 157 nm to 470 nm, respectively. The results revealed that the resistivity of the films decreased from 75.5 Ω·m to 42.5 Ω·m with the decrease in spinning speed. X-ray diffraction (XRD) studies demonstrated that the crystallite size varied in the range of 18.14–27.48 nm. The band gap of the samples was found to vary from 2 eV to 1.69 eV, revealing that these samples were suitable for gas sensing applications. Field-emission scanning microscopy (FESEM) studies showed that the prepared samples were porous in nature and were suitable for H<sub>2</sub>S gas detection. The films were examined at different operating temperatures with different concentrations of H<sub>2</sub>S gas. The results showed that the response toward hydrogen sulfide gas varied with varying thickness of the samples. The CuO thin films showed the highest response toward hydrogen sulfide gas at a temperature of 25°C.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence Characteristics of Post-annealed Cu2O Thin Films 退火后 Cu2O 薄膜的光致发光特性
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11416-y
Chin-Hau Chia, Shih-Hao Su, Yu-Min Hu, Jau-Wern Chiou, Chin-Chung Yu, Sheng-Rui Jian
{"title":"Photoluminescence Characteristics of Post-annealed Cu2O Thin Films","authors":"Chin-Hau Chia, Shih-Hao Su, Yu-Min Hu, Jau-Wern Chiou, Chin-Chung Yu, Sheng-Rui Jian","doi":"10.1007/s11664-024-11416-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11416-y","url":null,"abstract":"<p>Cuprous oxide (Cu<sub>2</sub>O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO<sub>2</sub>). Reduction and oxidation of oxygen were found in thin films annealed under PO<sub>2</sub> of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu<sub>2</sub>O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO<sub>2</sub> of 0.3 Pa and 0.7 Pa, Cu<sub>2</sub>O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu<sub>2</sub>O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computational Modeling of Electronic, Valence Band Offset, and Thermoelectric Transport Properties of SrTiO3/LaCrO3 Heterostructures SrTiO3/LaCrO3 异质结构的电子、价带偏移和热电传输特性的计算建模
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11374-5
I. Soli, M. Zemzemi, B. Agoubi, O. Khaldi, K. Khirouni
{"title":"Computational Modeling of Electronic, Valence Band Offset, and Thermoelectric Transport Properties of SrTiO3/LaCrO3 Heterostructures","authors":"I. Soli, M. Zemzemi, B. Agoubi, O. Khaldi, K. Khirouni","doi":"10.1007/s11664-024-11374-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11374-5","url":null,"abstract":"<p>The emergence of new functionalities in transition metal oxides and their interfaces poses an important challenge. Many recent discoveries regarding the polar/nonpolar interface between perovskite oxides open new avenues for modern applications. SrTiO<sub>3</sub>/LaCrO<sub>3</sub> heterostructures are particularly intriguing due to a polar discontinuity along the [001] direction, giving rise to two distinct and controllable interface structures, TiO<sub>2</sub>-LaO and SrO-CrO<sub>2</sub>, which exhibit new and promising electronic and thermoelectric transport properties. Through a combination of first-principles simulations based on density functional theory and the Boltzmann transport equation, we have calculate and discuss the structural, electronic, valence band offset, and thermoelectric properties of SrTiO<sub>3</sub>, LaCrO<sub>3</sub>, and SrTiO<sub>3</sub>/LaCrO<sub>3</sub> heterostructures. The temperature dependence of the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and figure of merit is determined. Furthermore, we highlight the effect of the interface between the polar perovskite LaCrO<sub>3</sub> and the nonpolar SrTiO<sub>3</sub>(001) on the thermoelectric properties, wherein we observed a change in the metal–semiconductor transport behavior. These results constitute an important advancement in our understanding of the thermoelectric properties at polar/nonpolar perovskite oxide interfaces.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
rGO-Embedded Polymer Nanocomposite Layer for Improved Performance of Triboelectric Nanogenerator 嵌入 rGO 的聚合物纳米复合层可提高三电纳米发电机的性能
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11426-w
Shilpa Rana, Bharti Singh
{"title":"rGO-Embedded Polymer Nanocomposite Layer for Improved Performance of Triboelectric Nanogenerator","authors":"Shilpa Rana, Bharti Singh","doi":"10.1007/s11664-024-11426-w","DOIUrl":"https://doi.org/10.1007/s11664-024-11426-w","url":null,"abstract":"<p>A triboelectric nanogenerator (TENG) working on a contact electrification and electrostatic induction principle is a promising energy source for fulfilling the energy demand of low power electronic devices by converting the ambient mechanical energy to useful electrical energy. Here, a polymer nanocomposite film-based triboelectric nanogenerator has been designed by embedding reduced graphene oxide (rGO) nanosheets in a polyvinylidene fluoride (PVDF) matrix as one of the friction layers. The PVDF nanocomposite film-based TENG was constructed and examined for structural, electrical, and surface properties with varied weight percentages of rGO nanofillers (0.0 wt%, 0.5 wt%, 1.0 wt%, 1.5 wt%, and 2.0 wt%). The experimental results demonstrate that the addition of rGO in a PVDF matrix considerably increased the output performance of the TENG device. The TENG device with 1.5 wt% of rGO can deliver the maximum output voltage and current of 95.9 V, and 16.8 <i>μ</i>A, respectively, which are ~ 3 and ~ 7 times the voltage and current produced by pristine PVDF film-based TENG. The enhanced performance of the nanogenerator is attributed to the addition of conductive nanofillers in the polymer matrix which improves the surface charge density of polymer nanocomposite films by forming a conduction network, resulting in more effective charge transfer. Moreover, the output of the nanogenerator is stored in the capacitor and used to drive commercial LEDs, revealing the TENGs' potential applications for designing self-powered electronic devices.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compound Model of Twisted and Coiled Polymer Actuators Describing Relationship Between Output Force and Excitation Current 描述输出力与激励电流之间关系的扭曲和盘绕聚合物致动器复合模型
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-12 DOI: 10.1007/s11664-024-11423-z
Yawu Wang, Yue Zhang, Zhichao Xu, Peng Huang, Chun-Yi Su
{"title":"Compound Model of Twisted and Coiled Polymer Actuators Describing Relationship Between Output Force and Excitation Current","authors":"Yawu Wang, Yue Zhang, Zhichao Xu, Peng Huang, Chun-Yi Su","doi":"10.1007/s11664-024-11423-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11423-z","url":null,"abstract":"<p>Recently discovered twisted and coiled polymer actuators (TCPAs) show huge potentials in the field of soft robots due to advantages of low cost, large deformation and force, high energy density, long life, compact size, and easy to drive. To realize practical applications of the TCPA in soft robots, the study on its dynamic modeling is necessary. However, the TCPA has an obvious hysteresis nonlinearity, bringing obstacles to its modeling. Although some hysteresis models for the TCPA have been established, the study on its rate-dependent hysteresis modeling is still insufficient. To address this issue, a compound model has been established, in which the thermomechanical model is developed by cascading the backlash-like model and a dynamic linear system to depict the relationship between the output force and temperature. In addition, a thermoelectric model has been developed based on the first law of thermodynamics, whose function is to depict the relationship between the temperature and excitation current. All fitness values in the model validation of the compound model are larger than 87.949%. Hence, the compound model has a good generalization performance.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Orange-Red-Emitting Ba2YAlO5:Sm3+ Phosphors with High Thermal Stability for Preparation of w-LEDs 具有高热稳定性的橘红色发光 Ba2YAlO5:Sm3+ 磷光体用于制备 w-LED
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-11 DOI: 10.1007/s11664-024-11395-0
Leilei Wang, Haiyan Jiang
{"title":"Orange-Red-Emitting Ba2YAlO5:Sm3+ Phosphors with High Thermal Stability for Preparation of w-LEDs","authors":"Leilei Wang, Haiyan Jiang","doi":"10.1007/s11664-024-11395-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11395-0","url":null,"abstract":"<p>A series of orange-red-emitting phosphors, Ba<sub>2</sub>Y<sub>1−<i>x</i></sub>Sm<sub><i>x</i></sub>AlO<sub>5</sub> (<i>x</i> = 1 mol.%, 2 mol.%, 5 mol.%, 10 mol.%, 15 mol.%, 20 mol.%, 25 mol.%, and 30 mol.%), were successfully synthesized using a high-temperature solid-state method at 1400°C, with Sm<sup>3+</sup> serving as the activator. The crystallinity of the samples was confirmed in the space group <i>P</i>2<sub>1</sub>/c (14). Efficient excitation was observed in the Ba<sub>2</sub>YAlO<sub>5</sub>:<i>x</i>Sm<sup>3+</sup> phosphors when exposed to 405 nm irradiation. Upon excitation at 405 nm, the synthesized Ba<sub>2</sub>YAlO<sub>5</sub>:<i>x</i>Sm<sup>3+</sup> phosphors displayed three distinctive peaks, which corresponded to the transitions of Sm<sup>3+</sup> at <sup>4</sup>G<sub>5/2</sub>–<sup>6</sup>H<sub><i>J</i></sub> (<i>J</i> = 5/2, 7/2, and 9/2). Optimal luminescence properties were achieved at a Sm<sup>3+</sup> concentration of 2 mol.%. The phenomenon of concentration quenching was elucidated through the application of dipole–dipole interaction theory. The quenching temperature of Ba<sub>2</sub>YAlO<sub>5</sub>:0.10Sm<sup>3+</sup> exceeded 480 K. The CIE chromaticity coordinates of Ba<sub>2</sub>YAlO<sub>5</sub>:<i>x</i>Sm<sup>3+</sup> closely align with the recognized standard red defined by the National Television System Committee (NTSC). This conformity underscores the potential of Ba<sub>2</sub>YAlO<sub>5</sub>:<i>x</i>Sm<sup>3+</sup> phosphors for applications demanding precise color reproduction, as required in advanced display technologies and lighting systems.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Firefly Algorithm-Driven Development of Resistive Ink-Coated Glass and Mesh Fibers for Advanced Microwave Stealth and EMI Shielding Applications 萤火虫算法驱动的用于先进微波隐形和 EMI 屏蔽应用的电阻油墨涂层玻璃和网状光纤的开发
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-11 DOI: 10.1007/s11664-024-11405-1
Deepanshu Sahu, Ravi Panwar
{"title":"Firefly Algorithm-Driven Development of Resistive Ink-Coated Glass and Mesh Fibers for Advanced Microwave Stealth and EMI Shielding Applications","authors":"Deepanshu Sahu, Ravi Panwar","doi":"10.1007/s11664-024-11405-1","DOIUrl":"https://doi.org/10.1007/s11664-024-11405-1","url":null,"abstract":"<p>The design and development of efficient microwave-absorbing and electromagnetic interference (EMI) shielding materials and structures to conceal electromagnetic (EM) waves remains a consistent and challenging task. Despite advancements in materials science and microwave engineering, there is a need for optimized materials that offer both effective microwave absorption and EMI shielding while minimizing material layer thickness. This research aims to address this gap by utilizing the firefly algorithm (FFA) to predict the optimal medium properties and thickness of microwave-absorbing and EMI shielding materials under specific constraints. In this context, a comprehensive investigation was carried out at the X-band involving numerical and experimental EM characterization of novel lightweight fiber-based samples. Additionally, the FFA has been applied to optimize these fiber-based microwave structures within the given constraints. Two separate objective functions (OBF) targeting minimum sample thickness, maximum microwave absorption, and shielding effectiveness (SE) bandwidth have been integrated into the FFA to address the thickness–bandwidth trade-off issue. Subsequently, resistive ink-coated glass fiber (IGF) and ink-coated mesh fiber (IMF) were developed and characterized based on the optimal solutions provided by the FFA. Consequently, an optimized IMF sample provides a minimum reflection coefficient (RC) of −19.0 dB at 10.7 GHz with a bandwidth of 2.8 GHz (9.6 to 12.4 GHz) below the −10 dB threshold. Besides, the optimal IGF sample achieves maximum SE of 11 dB at thickness of only 0.8 mm and covers the entire operating band. Furthermore, the response of the proposed structure was assessed for various oblique angles of incidence, revealing significant potential for various practical applications. A strong correlation between measured and theoretical findings underscores the potential of the proposed approach in realizing efficient microwave stealth and EMI shielding materials.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and Optical Studies on WO3/SnO2 and WO3/SnO2/SrO Composites WO3/SnO2 和 WO3/SnO2/SrO 复合材料的结构和光学研究
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-10 DOI: 10.1007/s11664-024-11412-2
N. Gopinathan, K. Kamalnathan, S. Sathik Basha, M. Mubeen
{"title":"Structural and Optical Studies on WO3/SnO2 and WO3/SnO2/SrO Composites","authors":"N. Gopinathan, K. Kamalnathan, S. Sathik Basha, M. Mubeen","doi":"10.1007/s11664-024-11412-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11412-2","url":null,"abstract":"<p>Doping is a widely explored technique to modify the properties of semiconducting materials. In the case of tungsten trioxide (WO<sub>3</sub>), doping with elements such as SnO<sub>2</sub> and SrO has garnered significant attention owing to its potential impact on structural, functional, and optical characteristics. We report on structural, functional, optical, and dielectric properties of SnO<sub>2</sub>/WO<sub>3</sub> and SrO/SnO<sub>2</sub>/WO<sub>3</sub> composites and, for comparison, WO<sub>3</sub> prepared via a wet chemical method. Crystallite phases were confirmed using x-ray diffraction patterns. Fourier-transform infrared spectroscopy and dielectric studies were employed to analyze the functional groups, dielectric constants, and losses of the SnO<sub>2</sub>/WO<sub>3</sub> and WO<sub>3</sub>/SnO<sub>2</sub>/SrO composites. Ultraviolet-visible spectroscopy and photoluminescence spectroscopy were used to examine the optical absorption and emission maxima, respectively. The energy bandgap was determined from the absorption spectra by using a Tauc plot. Additionally, all the prepared composites exhibited brighter and sharper narrow emissions in the photoluminescence spectra. Dielectric studies of WO<sub>3</sub>/SnO<sub>2</sub>/SrO composites revealed slightly better dielectric constants and lower dielectric losses than those of SnO<sub>2</sub>/WO<sub>3</sub> composites. Our findings suggest that the prepared composites are suitable for use in sensor and optoelectronic device applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rhizopus Hyphae Carbon as Efficient Sulfur Host For Lithium–Sulfur Batteries 根瘤菌菌丝碳作为锂硫电池的高效硫宿主
IF 2.1 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-09-10 DOI: 10.1007/s11664-024-11403-3
Weiyong Zhang, Long Wang, Lei Huang, Xinping He, Xinqi Liang, Xinhui Xia, Yongqi Zhang, Feng Cao, Minghua Chen, Wangjun Wan, Chen Wang, Yang Xia, Jun Zhang, Wenkui Zhang
{"title":"Rhizopus Hyphae Carbon as Efficient Sulfur Host For Lithium–Sulfur Batteries","authors":"Weiyong Zhang, Long Wang, Lei Huang, Xinping He, Xinqi Liang, Xinhui Xia, Yongqi Zhang, Feng Cao, Minghua Chen, Wangjun Wan, Chen Wang, Yang Xia, Jun Zhang, Wenkui Zhang","doi":"10.1007/s11664-024-11403-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11403-3","url":null,"abstract":"<p>Construction of advanced carbon material is critical for the development of high-performance lithium–sulfur batteries. In this work, we report <i>Rhizopus</i> hyphae biomass carbon (RHBC) as a host material for the sulfur cathode of lithium–sulfur batteries. The porous structure of the RHBC is optimized through hydrothermal activation using KOH solution. The introduction of RHBC into the cathode not only enhances the electronic conductivity of the sulfur cathode, but also substantially improves the capacity of the active materials. Additionally, the RHBC can effectively relieve the volume expansion problem of the sulfur conversion reaction and maintain structural stability, leading to improved lifetime and capacity. Accordingly, the KOH-activated RHBC/S cathode presents initial discharge specific capacity of 748 mAh/g at current density of 0.1 C. Furthermore, the porous structure facilitates rapid transport of electrons and ions, thereby enabling good high-rate performance.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.1,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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