Light Sensing Properties of WS2/p-Si Heterojunction Petal-Like Morphology Thin Film Synthesized Using CBD

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2025-09-15 DOI:10.1007/s11664-025-12345-0

Avneesh Kumar, Ajeet Gupta, Surbhi, Himanshu Sharma, Munish Kumar Yadav, Anjali Verma, Mudit P. Srivastava, Devendra Kumar Rana

{"title":"Light Sensing Properties of WS2/p-Si Heterojunction Petal-Like Morphology Thin Film Synthesized Using CBD","authors":"Avneesh Kumar, Ajeet Gupta,  Surbhi, Himanshu Sharma, Munish Kumar Yadav, Anjali Verma, Mudit P. Srivastava, Devendra Kumar Rana","doi":"10.1007/s11664-025-12345-0","DOIUrl":null,"url":null,"abstract":"<div><p>Heterojunction WS<sub>2</sub>/p-Si thin film was synthesized using the chemical bath deposition (CBD) method. X-ray diffraction patterns show that the WS<sub>2</sub> thin film has high crystallinity with a hexagonal phase and crystallite size of ~221 nm. Field-emission scanning electron microscopy (FESEM) shows a petal-like morphology. The optical characteristics of the deposited WS<sub>2</sub> thin film were examined using ultraviolet–visible (UV–Vis) spectroscopy and photoluminescence (PL) spectroscopy, revealing an optical bandgap of approximately 2.33 eV in the visible spectrum. The PL emission spectrum shows multiple emission peaks between 400 nm and 675 nm. Current–voltage (<i>I–V</i>) characteristics were measured in the dark and at different light wavelengths, with the estimated ideality factor ranging from ~1.52 to ~1.67, which is very close to the ideal value for a diode. Current–time (<i>I–t</i>) measurement of the WS<sub>2</sub> thin film shows response and recovery time of ~0.01 s. The measurement at 5 V and forward biasing shows the lowest recovery and response time, which make it highly effective for detecting light in a broad range from the near-infrared to UV region.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 11","pages":"9606 - 9618"},"PeriodicalIF":2.5000,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-025-12345-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Heterojunction WS₂/p-Si thin film was synthesized using the chemical bath deposition (CBD) method. X-ray diffraction patterns show that the WS₂ thin film has high crystallinity with a hexagonal phase and crystallite size of ~221 nm. Field-emission scanning electron microscopy (FESEM) shows a petal-like morphology. The optical characteristics of the deposited WS₂ thin film were examined using ultraviolet–visible (UV–Vis) spectroscopy and photoluminescence (PL) spectroscopy, revealing an optical bandgap of approximately 2.33 eV in the visible spectrum. The PL emission spectrum shows multiple emission peaks between 400 nm and 675 nm. Current–voltage (I–V) characteristics were measured in the dark and at different light wavelengths, with the estimated ideality factor ranging from ~1.52 to ~1.67, which is very close to the ideal value for a diode. Current–time (I–t) measurement of the WS₂ thin film shows response and recovery time of ~0.01 s. The measurement at 5 V and forward biasing shows the lowest recovery and response time, which make it highly effective for detecting light in a broad range from the near-infrared to UV region.

Graphical abstract

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CBD合成WS2/p-Si异质结花瓣状薄膜的光敏性能

采用化学浴沉积（CBD）法制备了WS2/p-Si异质结薄膜。x射线衍射图表明，该WS2薄膜具有高结晶度，为六方相，晶粒尺寸为~221 nm。场发射扫描电镜（FESEM）显示花瓣状形貌。利用紫外-可见（UV-Vis）光谱和光致发光（PL）光谱对制备的WS2薄膜的光学特性进行了测试，发现其可见光带隙约为2.33 eV。发光光谱显示400 ~ 675 nm之间有多个发射峰。在黑暗和不同光波长下测量了电流-电压（I-V）特性，估计的理想因数范围为~1.52 ~ ~1.67，非常接近二极管的理想值。电流时间（I-t）测量表明，WS2薄膜的响应和恢复时间为~0.01 s。在5 V和正向偏置下的测量显示出最低的恢复和响应时间，这使得它在近红外到紫外区域的广泛范围内检测光非常有效。图形抽象

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.