Journal of Electronic Materials最新文献

{"title":"Synergistic Effects and Characterization of CoMn2O4/Graphene in DSSC Counter Electrodes","authors":"Muhammad Shahid Khan, Farasat Haider, Adnan Majeed, Muhammad Musharaf, Naeem Ahmed, Abdul Majid, Khalid Javed, Mashkoor Ahmed","doi":"10.1007/s11664-024-11388-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11388-z","url":null,"abstract":"<p>This work is focused on fabricating a counter electrode (CE) for application in a dye-sensitized solar cell (DSSC). Cobalt manganese oxide (CoMn₂O₄) nanoparticles (NPs) and its nanocomposite with graphene were prepared by a hydrothermal method. The nanocomposites of cobalt manganese oxide with graphene as CoMn₂O₄/(graphene)_x (where <i>x</i> = 0.2, 0.4, and 0.6) were synthesized as an electrode material, and a cell was fabricated for the <i>x</i> = 0.6 nanocomposite to investigate the activity for use in DSSCs. These nanocomposites were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), and Fourier transform infrared (FTIR) spectroscopy. SEM analysis revealed the nature of the particles, and the average grain size was in good agreement with XRD results. EDX showed the ratio of the respective samples. The XRD pattern showed the hexagonal structure of CoMn₂O₄ NPs with an average size of 39.45 nm. The FTIR spectrum indicated O–H stretching bonds and the vibrational bending of MnO at the interstitial sites. For electrochemical analysis, cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were performed. Through CV analysis, an anodic peak current (<i>I</i>_pa) was observed at 41.42 µA, while the cathodic peak current (<i>I</i>_pc) was observed at −37.13 µA, and peak-to-peak separation (Δ<i>E</i>_pp) = 0.31 V for CoMn₂O₄ NPs. For graphene, <i>I</i>_pa = 180.45 µA, <i>I</i>_pc = −230 µA, and Δ<i>E</i>_pp = 0.25 V, while <i>I</i>_pa = 100.23 µA, <i>I</i>_pc = 80.65 µA, and Δ<i>E</i>_pp = 0.16 V for the CoMn₂O₄/graphene (<i>x</i> = 0.6) nanocomposite, which also showed excellent electrocatalytic properties. The charge transfer mechanism on the surface of the electrode was found to have rapid oxidation–reduction behavior and can be used as an alternative to platinum as the CE in the DSSC. The CV analysis of the CoMn₂O₄/graphene (<i>x</i> = 0.6) nanocomposite-based DSSC showed that the <i>I</i>_pa current was observed at 26.85 mA, while the <i>I</i>_pc current was observed at −27.25 mA in the two-electrode system. The <i>R</i>_s values for CoMn₂O₄/graphene with <i>x</i> = 0.2, 0.4, and 0.6 were 142.80 Ω, 141.33 Ω, 135.18 Ω, and 131.18 Ω, respectively, as an electrode material. The exchange current density <i>J</i> = 2.13 × 10⁻³ A/cm² was found using the charge transfer resistance value (<i>R</i>_ct = 6.03 Ω cm²) and was verified by the Tafel curve.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors","authors":"Bingtao Liu, Changmeng Huan, Yongqing Cai, Qingqing Ke","doi":"10.1007/s11664-024-11396-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11396-z","url":null,"abstract":"<p>Hysteresis window observed in ferroelectric negative capacitance field-effect transistors (NCFETs) have been a persistent challenge in the development of reliable logic circuits, often leading to abnormal operational conditions. Despite its significance, the underlying factors driving this hysteresis phenomenon remain elusive. In this study, we employ the quasi-static L–K equation in conjunction with the Mott–Gurney law to study the impact of V_O⁺⁺ migration on the hysteresis behavior of NCFETs, based on a surface potential-based physical model. Compared with pristine NCFET, the difference of peak voltages in value of 1.3 V was achieved in V_O⁺⁺-involved sample upon reverse and forwards scanning. This result clearly suggests that the relaxation of charged oxygen vacancies significantly affects the threshold voltage under applied sweeping voltages, providing a plausible explanation for the emergence of hysteresis windows in NCFETs. A replacement of the conventional oxide layer with a buffer layer containing high-mobility ions is proposed to adjust the hysteresis window. Importantly, in accordance with the theoretical predictions, the increased ion mobility results in a substantial reduction in the hysteresis window observed in NCFETs. Our proposed physical mechanism, elucidating the space-charge-induced hysteresis behavior, provides fresh insights for mitigating hysteresis effects, thereby advancing the potential applications of NCFETs in logic circuits.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Green Synthesis of Copper Sulphide Nanoparticles Using Extracts of Syzygium cumini, Azadirachta indica, and Cascabela thevetia","authors":"KM Srishti Barnwal, Yukti Gupta, Neena Jaggi","doi":"10.1007/s11664-024-11387-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11387-0","url":null,"abstract":"<p>Nanotechnology is a burgeoning modern technology due to the remarkable properties of nanoparticles. However, the escalating use of toxic reagents during the chemical synthesis of nanoparticles has become a major concern for environmental safety and human and animal health. Regarding this problem, the notion of integrating nanotechnology with green synthesis is increasingly attracting the attention of researchers. This particular study aims at the green synthesis of copper sulphide (CuS) nanoparticles S1, S2, and S3 utilizing the leaf extracts of <i>Azadirachta indica </i>(neem)<i>, Syzygium cumini </i>(jamun)<i>,</i> and <i>Cascabela thevetia </i>(kaner), respectively. The prepared leaf extract of neem is rich in quercetin, whereas extracts of jamun and kaner leaves contain gallic acid, which serves as a reducing agent during the formation of nanoparticles. The prominent and sharp peaks of x-ray diffraction (XRD) patterns match well with ICDD card no. 06-0464, which confirms the hexagonal phase of covellite CuS. Scanning electron microscopy (SEM) images reveal the formation of spherical-shaped CuS nanoparticles with mild agglomeration. The presence of Cu and S as the only elements in the synthesized samples is confirmed by energy-dispersive x-ray analysis (EDX). The occurrence of various stretching and bending vibrational modes is observed via Fourier transform infrared (FTIR) spectroscopy. Furthermore, the obtained FTIR spectra of S1, S2, and S3 evince the formation of CuS nanoparticles and the presence of bioactive compounds. The UV-Vis absorption data of the prepared samples reveal that their band gap energies lie within the range of 1.5–1.7 eV. The photoluminescence (PL) spectra of S1, S2, and S3 display decreased intensity, which could be due to the reduced recombination rate of charge carriers. The CuS nanoparticles synthesized with neem leaf extract exhibit relatively smaller crystallite size, wider band gap of 1.7 eV, and a lower recombination rate of charge carriers.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"WO3 and WO3-SnO2 Composite-Based Sensors for Low-Temperature Detection of NO2 Gas","authors":"Jatinder Pal Singh, Anjali Sharma, Monika Tomar, Arijit Chowdhuri","doi":"10.1007/s11664-024-11381-6","DOIUrl":"https://doi.org/10.1007/s11664-024-11381-6","url":null,"abstract":"<p>Air pollution, along with climate change, poses significant risks to human health. One of the major contributors to air pollution, particularly in urban areas, is nitrogen dioxide (NO₂). Continuous real-time monitoring of NO₂ is necessary for the protection of human health and the environment. Currently, efforts are concentrated across the globe toward the development of compact NO₂ sensors that exhibit higher responses at lower operating temperatures. In the present work, conductometric gas sensors based on tungsten trioxide (WO₃), tin oxide (SnO₂), and tin oxide–tungsten trioxide (WO₃-SnO₂) composites have been developed using the chemical solution deposition (CSD) technique for NO₂ detection. The investigation of the sensing response was conducted over a range of temperatures, spanning from 30°C to 180°C towards 10 ppm of NO₂. The pristine WO₃ sensor showed a maximum response of ~ 535 at 150°C with a response time of 21 s and recovery time of 126 s, whereas the WO₃-SnO₂ composite sensor showed a maximum response of ~ 209 at a relatively lower temperature of 120°C with a response time of 37 s and recovery time of 135 s. The composite sensor thus shows the potential for the realization of an efficient NO₂ sensor at a lower operating temperature.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"154 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Voltage Sweep Direction-Dependent Memory Characteristics in an Organic Film","authors":"Nilima Biswas, Shyam Kumar Bhattacharjee, Syed Arshad Hussain, Pabitra Kumar Paul, Debajyoti Bhattacharjee","doi":"10.1007/s11664-024-11393-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11393-2","url":null,"abstract":"<p>The present work reports the findings of “write once read many” (WORM) characteristics in the thin film of an organic dye, Thiazole Yellow G (TYG), when a positive voltage sweep was applied. For a negative voltage sweep, purely ohmic characteristics were observed. During the positive voltage sweep, electron transport took place, and in the negative sweep, hole transport was observed. These voltage sweep-dependent memory characteristics are explained using density functional theory (DFT) calculations for the dye’s highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy level diagram and other theoretical models. High-temperature studies of the device also supported our explanations. Additionally, the device exhibited impressive data retention time of more than 16 h, a large memory window of the order of 10³, a high success rate in device fabrication (yield), and 2000 write/read cycles (endurance). Overall, this device shows promising features due to its distinct charge transport behaviour depending on the voltage sweep direction, making it a potential candidate for future efficient resistive memory applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing the Performance of MAPbI3-Based Perovskite Solar Cells Fabricated Under Ambient Air: Effect of Cu, Ni, and Zn Doping into TiO2","authors":"Mezan Adly Al Qadri, Wahyu Solafide Sipahutar, Nur Istiqomah Khamidy, Iwan Syahjoko Saputra, Eri Widianto, Widi Astuti, Eka Nurfani","doi":"10.1007/s11664-024-11386-1","DOIUrl":"https://doi.org/10.1007/s11664-024-11386-1","url":null,"abstract":"<p>In this paper, we study the effects of Cu, Ni, and Zn doping in TiO₂ layers on the performance of MAPbI₃-based perovskite solar cells (PSCs) fabricated under ambient air with relative humidity between 60% and 70%. One of the factors limiting the efficiency of MAPbI₃-based PSCs is the TiO₂ electron transport layer properties. The efficiency of PSCs is the maximum power that can be produced by a PSC when illuminated by light with a specific energy. This study aims to enhance MAPbI₃-based PSC efficiency by doping TiO₂ with 2 mol.% Cu, Ni, and Zn. MAPbI₃-based PSCs were then fabricated using spin coating with the structure ITO/TiO₂/MAPbI₃/graphite/ITO. X-ray diffraction and scanning electron microscopy (SEM) analyses revealed that doping reduced TiO₂ crystal sizes from 19.34 nm (pure) to 18.96 nm (Cu-doped), 18.04 nm (Ni-doped), and 17.6 nm (Zn-doped), with corresponding average particle sizes of 225 nm, 107 nm, 79 nm, and 50.4 nm. Ultraviolet–visible (UV–Vis) spectroscopy indicated an increase in the bandgap from 3.0 eV (pure) to 3.1 eV (Cu-doped), 3.2 eV (Ni-doped), and 3.25 eV (Zn-doped). Current–voltage (<i>I</i>–<i>V</i>) electrical testing revealed improvement in efficiency from 5.7% (undoped) to 7.6% (Cu-doped), 6.9% (Ni-doped), and 8.01% (Zn-doped). These findings demonstrate that metal-doped TiO₂ significantly enhances the efficiency of MAPbI₃-based PSCs fabricated in open-air environments without the need for a glove box.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"107 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Analysis on Interfacial Dynamics Between Charge Transport Layer and Different Absorbers in Pb-free All Inorganic Perovskites Solar Cells","authors":"Md. Ariful Islam, Md. Mahfuzul Haque, Vidhya Selvanathan, M. Mottakin, D. K. Sarkar, Khurram Joya, Abdulaziz M. Alanazi, Takashi Suemasu, Ishtiaque M Syed, Md. Akhtaruzzaman","doi":"10.1007/s11664-024-11372-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11372-7","url":null,"abstract":"<p>Although perovskite solar cells (PSCs) have captured notable interest as a potential candidate for third-generation solar cells, due to their favorable optoelectronic properties, cost-effectiveness, and high efficiency, some issues related to device stability and toxicity of the perovskite (PSK) layer hinders the commercial viability of PSCs. The inherent instability of organic PSK halides and the toxicity of Pb has compelled researchers to focus on developing Pb-free all-inorganic PSCs by replacing the organic species with inorganic (Cs⁺) cations as a safer alternative. In this study, the SCAPS-1D simulator was employed to investigate the cell performances of all-inorganic Pb-free Cs-based PSCs with three different PSK layers (CsGeI₃, CsSnI₃, and Cs₂TiI₆) individually, where inorganic ZnO and CuSCN were used as the electron transport layer (ETL) and the hole transport layer (HTL), respectively. The Cs₂TiI₆-based PSC was found to have the best performance. Then, the defect tolerance level of the PSK layer and the impact of band offset on cell performances were investigated. The optimum values of the conduction band offset (CBO) and the valence band offset (VBO) were found to be 0 eV and between − 0.1 eV and 0 eV, respectively. Moreover, the effect of interface defects at the ETL/PSK and PSK/HTL interfaces on cell performance was also analyzed as a function of CBO and VBO and, for both cases, the interface defect tolerance limit was recorded as 10¹⁶ cm⁻². This study observed a high rate of recombination for negative values of CBO and VBO at the interfaces. Thus, these findings will guide researchers in developing high-performance PSCs with suitable inorganic Pb-free perovskite and charge transport layers.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fatigue and Failure Mechanism Induced by Mechanical Strain and Electrochemical Cycling of Li+ Intercalation and Deintercalation in CF Structural Batteries","authors":"Manal Karim, Hafsa Mallah, Mohammed Tanasehte, Rachida Moultif, Ahmed Hader, Salma Moushi, Iliass Tarras, Yassine Ezaier, Rachid E. T. Touizi, Siham Boufass, Abdelhadi El Bachiri","doi":"10.1007/s11664-024-11389-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11389-y","url":null,"abstract":"<p>Structural batteries offer multiple advantages, providing viable solutions for electric mobility. By playing a dual role as both an energy storage device and structural component, they can achieve a larger transportation range and greater safety. However, they are exposed to external mechanical loads that can exacerbate the mechanical stresses induced by the electrochemical cycling. It should be noted that batteries undergo stress due to the intercalation and deintercalation of Li⁺. In fact, when lithium ions are inserted into the active materials, mechanical tension occurs, which can cause cracks and pulverization of the particles. Consequently, the individual particles lose their electrical connectivity. Another aging process is caused by the expansion of the active materials due to mechanical strain during the insertion of lithium ions, resulting in changes in particle volume. In addition to this electrochemical stress, there is added mechanical stress due to their role as a structural component. This paper explores the superposition of these two phenomena and tries to understand the fatigue and failure mechanisms induced by mechanical strain and electrochemical cycling (Li⁺ intercalation/deintercalation) in structural batteries. To achieve this, we plan to use the fiber bundle model as a theoretical approach to study the damage and fracture of fiber-reinforced composite materials.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoelectrochemical Photodetectors Based on WSe2/rGO Hybrid Structure with Enhanced Performance","authors":"Zhuoqiao Xie, Ruiyang Yu, Zongyu Huang, Hui Qiao, Xiang Qi","doi":"10.1007/s11664-024-11385-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11385-2","url":null,"abstract":"<p>Efficient photoelectrochemical photodetectors based on WSe₂/rGO have been fabricated using an annealing process. The initial performance enhancement of these devices was primarily attributed to the improved bandgap structure of WSe₂ and the high carrier mobility of rGO, which facilitated an efficient transition of valence band electrons to the conduction band. Upon this understanding, a comparison between bulk WSe₂ and WSe₂ nanosheets (WSe₂ NSs) was conducted. It was found that, at a bias voltage of 0.6 V, the photocurrent density of WSe₂ NSs devices was 76% higher than that of similar bulk WSe₂ devices, reaching 0.044 <i>μ</i>A/cm². Owing to the significant advantages of rGO, extensive testing of various WSe₂ to rGO ratios was performed, identifying the precise composition that optimized photoelectric performance. Notably, under conditions of 0.5 M Na₂SO₄ electrolyte, 120 mW/cm² irradiance, and 0.6 V bias potential, the devices achieved a photocurrent density of 0.64 <i>μ</i>A/cm², which is approximately 25.72 times higher than that of bulk WSe₂ and 14.61 times more than WSe₂ NSs. Moreover, the photoresponse trended upward with increasing irradiation intensity. Specifically, when the irradiation intensity was increased to 160 mW/cm² and the bias voltage was raised from 0 V to 0.6 V, the photoresponsivity increased by 5.8 times, from 1 <i>μ</i>A/W to 5.8 <i>μ</i>A/W. The photodetectors constructed using the optimal WSe₂/rGO ratio exhibited no significant performance degradation during a 4000-s cyclic on/off test, demonstrating their robustness under operational conditions. This study highlights the substantial potential of WSe₂/rGO hybrids in enhancing the performance of photoelectrochemical photodetectors.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"2016 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Systematic Study of Liquid-State Interfacial Reactions Between Co and In-Sn Solders with Varying Sn Contents","authors":"Chao-hong Wang, Tai-yu Chang","doi":"10.1007/s11664-024-11382-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11382-5","url":null,"abstract":"<p>This study investigated the interfacial reactions between Co and In-Sn solders, with various compositions, up to 90 at% Sn, at 350°C, with the aim of evaluating their potential for use in the solid–liquid interdiffusion (SLID) process. The results demonstrated that the reaction phases formed at the interfaces exhibited significant variations depending on the Sn content present in the In-Sn solders. For Sn content below 2 at%, the reaction phase was CoIn₃. Notably, the CoIn₃ in the In-2 at% Sn/Co reaction exhibited a linear growth at a rate of ~ 15 <i>μ</i>m/h, which was significantly higher compared to the In/Co reaction. The accelerated growth rate could be attributed to the minor addition of Sn, which facilitated both the nucleation and growth of CoIn₃. With an increase in Sn content to 2.5–3.5 at%, the dominant reaction phase shifted to Co(In,Sn)₂, but its growth was significantly hindered. With a further increase in Sn content within the range of 4–35 at%, the irregular Co(Sn,In) phase became dominant. However, as the Sn content exceeded 36 at% and extended up to 90 at%, the Co(Sn,In)₂ phase remained stable at the interface, and its growth decreased significantly with increasing Sn content. The observed shift in the reaction phases is closely related to the local phase equilibrium. The suggested phase diagram of Co-In-Sn system was proposed to further understand the relationship between interfacial reaction and phase equilibrium. The Sn content of In-Sn solders not only influenced the formed reaction phase but also the growth rates and microstructures. Careful control of Sn content is crucial for the SLID process of In-Sn/Co system.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}