Journal of Electronic Materials最新文献

{"title":"Glycine as a Bi-functional Electrolyte Additive for Favorable Zn Deposition","authors":"Zhaohe Guo, Xueyao Mo, Yan Xu, Xuena Xu, Liluo Shi, Hongri Wan, Limei Sun, Wenchang Zhuang, Ming Song","doi":"10.1007/s11664-024-11397-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11397-y","url":null,"abstract":"<p>Aqueous zinc-ion batteries (ZIBs) with advantages of low cost, high safety, and eco-friendliness hold immense potential as large-scale energy storage devices. Nevertheless, the uncontrollable side reactions and Zn dendrites severely compromise the reversibility and stability of zinc anodes, hindering the practical application of ZIBs. In this study, glycine is introduced as a bi-functional additive into the ZnSO₄ electrolyte to address these challenges. Experimental results and theoretical calculations demonstrate that the glycine can effectively modulate the solvation structure of Zn²⁺, thereby suppressing the hydrogen evolution reaction (HER) and the formation of by-products. Additionally, glycine molecules preferentially adsorb onto the zinc anode, altering the interface between the Zn anode and the electrolyte. This increases the nucleation overpotential and inhibits the 2D diffusion of Zn²⁺, promoting the homogeneous deposition of Zn. As a result, the Zn||Zn symmetric cell with glycine additive displays a stable cycling performance for over 1500 h at 5 mA cm⁻² and 1 mA h cm⁻², and the Zn||Cu asymmetric cell exhibits a reversible plating/stripping process with the high stable coulombic efficiency (CE) of 98.4% over 600 cycles. This study offers a low-cost, efficient, and environmentally benign electrolyte additive for favorable Zn deposition.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Hydroxyl Group Concentration Generated by Vacuum Ultraviolet Light on the Adhesion Between Epoxy Resin and Copper","authors":"Shinichi Endo, Yuki Ishikawa, Hina Shirakashi, Takeyasu Saito","doi":"10.1007/s11664-024-11379-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11379-0","url":null,"abstract":"<p>In this work, pretreatment with vacuum ultraviolet (VUV) light changed the adhesion strength between an epoxy resin and directly sputtered copper in a printed circuit board manufacturing process. The adhesion strength was 0.9 N/cm without irradiation but had a peak value of 2.1 N/cm at 540 mJ/cm² of VUV irradiation; with increasing VUV irradiation, the adhesion strength decreased. Based on x-ray photoelectron spectroscopy (XPS) analysis of the copper interface of copper peeled from the resin, we evaluated the abundance ratio of metallic and organic oxygen at interfaces exposed to different VUV irradiation doses. We found that the change in the abundance ratio of metallic and organic oxygen was similar to the change in adhesion strength between copper and epoxy resin after exposure to different VUV irradiation doses. We observed the interface between copper and resin via scanning transmission electron microscopy (STEM) and found a distributed layer of oxygen. The functional group concentration in STEM images suggested the presence of a material with an intermediate density. We used chemically modified XPS to evaluate changes in the functional group concentration on epoxy resin surfaces irradiated with VUV light. We found that the hydroxyl group (OH) formed by VUV irradiation and the copper formed by direct sputtering improved adhesion strength in a synergistic manner. We observed a correlation between OH concentration on the resin surface and adhesion strength. These results will help to optimize the VUV irradiation process for adhesion between epoxy resin and sputtered copper.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Fabrication of Pt-Free Counter Electrode for Photovoltaic Application","authors":"Khursheed Ahmad, Mohd Quasim Khan, Ali Alsulmi, Tae Hwan Oh","doi":"10.1007/s11664-024-11390-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11390-5","url":null,"abstract":"<p>We report the synthesis of phosphorus (P)-doped reduced graphene oxide (P-rGO) using a hydrothermal method at 180°C for 7 h. Furthermore, the amorphous nature and phase purity of the hydrothermally synthesized P-rGO was studied by powder x-ray diffraction. The characteristic sheet-like surface structure of the P-rGO was confirmed by scanning electron microscopy. The presence of P in the P-rGO was authenticated by using energy-dispersive x-ray spectroscopy and photoelectron x-ray spectroscopy. The synthesized P-rGO was employed as a low-cost and Pt-free counter electrode material for the construction of dye-sensitized solar cells (DSSCs). The effect of annealing temperature on the construction of the DSSCs using P-rGO was also studied, and the highest power conversion efficiency of 6.3% and photocurrent density of 15.37 mA/cm² were obtained at 200°C. The platinum counter electrode-based DSSCs exhibited the power conversion efficiency of 7.4%. The performance of the P-rGO counter electrode-based DSSCs was reasonable and can be further improved by developing novel device architectures. This work proposes the simple, eco-friendly, and Pt-free counter electrode for the construction of DSSCs with a decent performance.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Effects and Characterization of CoMn2O4/Graphene in DSSC Counter Electrodes","authors":"Muhammad Shahid Khan, Farasat Haider, Adnan Majeed, Muhammad Musharaf, Naeem Ahmed, Abdul Majid, Khalid Javed, Mashkoor Ahmed","doi":"10.1007/s11664-024-11388-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11388-z","url":null,"abstract":"<p>This work is focused on fabricating a counter electrode (CE) for application in a dye-sensitized solar cell (DSSC). Cobalt manganese oxide (CoMn₂O₄) nanoparticles (NPs) and its nanocomposite with graphene were prepared by a hydrothermal method. The nanocomposites of cobalt manganese oxide with graphene as CoMn₂O₄/(graphene)_x (where <i>x</i> = 0.2, 0.4, and 0.6) were synthesized as an electrode material, and a cell was fabricated for the <i>x</i> = 0.6 nanocomposite to investigate the activity for use in DSSCs. These nanocomposites were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), and Fourier transform infrared (FTIR) spectroscopy. SEM analysis revealed the nature of the particles, and the average grain size was in good agreement with XRD results. EDX showed the ratio of the respective samples. The XRD pattern showed the hexagonal structure of CoMn₂O₄ NPs with an average size of 39.45 nm. The FTIR spectrum indicated O–H stretching bonds and the vibrational bending of MnO at the interstitial sites. For electrochemical analysis, cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were performed. Through CV analysis, an anodic peak current (<i>I</i>_pa) was observed at 41.42 µA, while the cathodic peak current (<i>I</i>_pc) was observed at −37.13 µA, and peak-to-peak separation (Δ<i>E</i>_pp) = 0.31 V for CoMn₂O₄ NPs. For graphene, <i>I</i>_pa = 180.45 µA, <i>I</i>_pc = −230 µA, and Δ<i>E</i>_pp = 0.25 V, while <i>I</i>_pa = 100.23 µA, <i>I</i>_pc = 80.65 µA, and Δ<i>E</i>_pp = 0.16 V for the CoMn₂O₄/graphene (<i>x</i> = 0.6) nanocomposite, which also showed excellent electrocatalytic properties. The charge transfer mechanism on the surface of the electrode was found to have rapid oxidation–reduction behavior and can be used as an alternative to platinum as the CE in the DSSC. The CV analysis of the CoMn₂O₄/graphene (<i>x</i> = 0.6) nanocomposite-based DSSC showed that the <i>I</i>_pa current was observed at 26.85 mA, while the <i>I</i>_pc current was observed at −27.25 mA in the two-electrode system. The <i>R</i>_s values for CoMn₂O₄/graphene with <i>x</i> = 0.2, 0.4, and 0.6 were 142.80 Ω, 141.33 Ω, 135.18 Ω, and 131.18 Ω, respectively, as an electrode material. The exchange current density <i>J</i> = 2.13 × 10⁻³ A/cm² was found using the charge transfer resistance value (<i>R</i>_ct = 6.03 Ω cm²) and was verified by the Tafel curve.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"19 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors","authors":"Bingtao Liu, Changmeng Huan, Yongqing Cai, Qingqing Ke","doi":"10.1007/s11664-024-11396-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11396-z","url":null,"abstract":"<p>Hysteresis window observed in ferroelectric negative capacitance field-effect transistors (NCFETs) have been a persistent challenge in the development of reliable logic circuits, often leading to abnormal operational conditions. Despite its significance, the underlying factors driving this hysteresis phenomenon remain elusive. In this study, we employ the quasi-static L–K equation in conjunction with the Mott–Gurney law to study the impact of V_O⁺⁺ migration on the hysteresis behavior of NCFETs, based on a surface potential-based physical model. Compared with pristine NCFET, the difference of peak voltages in value of 1.3 V was achieved in V_O⁺⁺-involved sample upon reverse and forwards scanning. This result clearly suggests that the relaxation of charged oxygen vacancies significantly affects the threshold voltage under applied sweeping voltages, providing a plausible explanation for the emergence of hysteresis windows in NCFETs. A replacement of the conventional oxide layer with a buffer layer containing high-mobility ions is proposed to adjust the hysteresis window. Importantly, in accordance with the theoretical predictions, the increased ion mobility results in a substantial reduction in the hysteresis window observed in NCFETs. Our proposed physical mechanism, elucidating the space-charge-induced hysteresis behavior, provides fresh insights for mitigating hysteresis effects, thereby advancing the potential applications of NCFETs in logic circuits.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Green Synthesis of Copper Sulphide Nanoparticles Using Extracts of Syzygium cumini, Azadirachta indica, and Cascabela thevetia","authors":"KM Srishti Barnwal, Yukti Gupta, Neena Jaggi","doi":"10.1007/s11664-024-11387-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11387-0","url":null,"abstract":"<p>Nanotechnology is a burgeoning modern technology due to the remarkable properties of nanoparticles. However, the escalating use of toxic reagents during the chemical synthesis of nanoparticles has become a major concern for environmental safety and human and animal health. Regarding this problem, the notion of integrating nanotechnology with green synthesis is increasingly attracting the attention of researchers. This particular study aims at the green synthesis of copper sulphide (CuS) nanoparticles S1, S2, and S3 utilizing the leaf extracts of <i>Azadirachta indica </i>(neem)<i>, Syzygium cumini </i>(jamun)<i>,</i> and <i>Cascabela thevetia </i>(kaner), respectively. The prepared leaf extract of neem is rich in quercetin, whereas extracts of jamun and kaner leaves contain gallic acid, which serves as a reducing agent during the formation of nanoparticles. The prominent and sharp peaks of x-ray diffraction (XRD) patterns match well with ICDD card no. 06-0464, which confirms the hexagonal phase of covellite CuS. Scanning electron microscopy (SEM) images reveal the formation of spherical-shaped CuS nanoparticles with mild agglomeration. The presence of Cu and S as the only elements in the synthesized samples is confirmed by energy-dispersive x-ray analysis (EDX). The occurrence of various stretching and bending vibrational modes is observed via Fourier transform infrared (FTIR) spectroscopy. Furthermore, the obtained FTIR spectra of S1, S2, and S3 evince the formation of CuS nanoparticles and the presence of bioactive compounds. The UV-Vis absorption data of the prepared samples reveal that their band gap energies lie within the range of 1.5–1.7 eV. The photoluminescence (PL) spectra of S1, S2, and S3 display decreased intensity, which could be due to the reduced recombination rate of charge carriers. The CuS nanoparticles synthesized with neem leaf extract exhibit relatively smaller crystallite size, wider band gap of 1.7 eV, and a lower recombination rate of charge carriers.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"WO3 and WO3-SnO2 Composite-Based Sensors for Low-Temperature Detection of NO2 Gas","authors":"Jatinder Pal Singh, Anjali Sharma, Monika Tomar, Arijit Chowdhuri","doi":"10.1007/s11664-024-11381-6","DOIUrl":"https://doi.org/10.1007/s11664-024-11381-6","url":null,"abstract":"<p>Air pollution, along with climate change, poses significant risks to human health. One of the major contributors to air pollution, particularly in urban areas, is nitrogen dioxide (NO₂). Continuous real-time monitoring of NO₂ is necessary for the protection of human health and the environment. Currently, efforts are concentrated across the globe toward the development of compact NO₂ sensors that exhibit higher responses at lower operating temperatures. In the present work, conductometric gas sensors based on tungsten trioxide (WO₃), tin oxide (SnO₂), and tin oxide–tungsten trioxide (WO₃-SnO₂) composites have been developed using the chemical solution deposition (CSD) technique for NO₂ detection. The investigation of the sensing response was conducted over a range of temperatures, spanning from 30°C to 180°C towards 10 ppm of NO₂. The pristine WO₃ sensor showed a maximum response of ~ 535 at 150°C with a response time of 21 s and recovery time of 126 s, whereas the WO₃-SnO₂ composite sensor showed a maximum response of ~ 209 at a relatively lower temperature of 120°C with a response time of 37 s and recovery time of 135 s. The composite sensor thus shows the potential for the realization of an efficient NO₂ sensor at a lower operating temperature.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"154 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Voltage Sweep Direction-Dependent Memory Characteristics in an Organic Film","authors":"Nilima Biswas, Shyam Kumar Bhattacharjee, Syed Arshad Hussain, Pabitra Kumar Paul, Debajyoti Bhattacharjee","doi":"10.1007/s11664-024-11393-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11393-2","url":null,"abstract":"<p>The present work reports the findings of “write once read many” (WORM) characteristics in the thin film of an organic dye, Thiazole Yellow G (TYG), when a positive voltage sweep was applied. For a negative voltage sweep, purely ohmic characteristics were observed. During the positive voltage sweep, electron transport took place, and in the negative sweep, hole transport was observed. These voltage sweep-dependent memory characteristics are explained using density functional theory (DFT) calculations for the dye’s highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy level diagram and other theoretical models. High-temperature studies of the device also supported our explanations. Additionally, the device exhibited impressive data retention time of more than 16 h, a large memory window of the order of 10³, a high success rate in device fabrication (yield), and 2000 write/read cycles (endurance). Overall, this device shows promising features due to its distinct charge transport behaviour depending on the voltage sweep direction, making it a potential candidate for future efficient resistive memory applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"87 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing the Performance of MAPbI3-Based Perovskite Solar Cells Fabricated Under Ambient Air: Effect of Cu, Ni, and Zn Doping into TiO2","authors":"Mezan Adly Al Qadri, Wahyu Solafide Sipahutar, Nur Istiqomah Khamidy, Iwan Syahjoko Saputra, Eri Widianto, Widi Astuti, Eka Nurfani","doi":"10.1007/s11664-024-11386-1","DOIUrl":"https://doi.org/10.1007/s11664-024-11386-1","url":null,"abstract":"<p>In this paper, we study the effects of Cu, Ni, and Zn doping in TiO₂ layers on the performance of MAPbI₃-based perovskite solar cells (PSCs) fabricated under ambient air with relative humidity between 60% and 70%. One of the factors limiting the efficiency of MAPbI₃-based PSCs is the TiO₂ electron transport layer properties. The efficiency of PSCs is the maximum power that can be produced by a PSC when illuminated by light with a specific energy. This study aims to enhance MAPbI₃-based PSC efficiency by doping TiO₂ with 2 mol.% Cu, Ni, and Zn. MAPbI₃-based PSCs were then fabricated using spin coating with the structure ITO/TiO₂/MAPbI₃/graphite/ITO. X-ray diffraction and scanning electron microscopy (SEM) analyses revealed that doping reduced TiO₂ crystal sizes from 19.34 nm (pure) to 18.96 nm (Cu-doped), 18.04 nm (Ni-doped), and 17.6 nm (Zn-doped), with corresponding average particle sizes of 225 nm, 107 nm, 79 nm, and 50.4 nm. Ultraviolet–visible (UV–Vis) spectroscopy indicated an increase in the bandgap from 3.0 eV (pure) to 3.1 eV (Cu-doped), 3.2 eV (Ni-doped), and 3.25 eV (Zn-doped). Current–voltage (<i>I</i>–<i>V</i>) electrical testing revealed improvement in efficiency from 5.7% (undoped) to 7.6% (Cu-doped), 6.9% (Ni-doped), and 8.01% (Zn-doped). These findings demonstrate that metal-doped TiO₂ significantly enhances the efficiency of MAPbI₃-based PSCs fabricated in open-air environments without the need for a glove box.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"107 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Analysis on Interfacial Dynamics Between Charge Transport Layer and Different Absorbers in Pb-free All Inorganic Perovskites Solar Cells","authors":"Md. Ariful Islam, Md. Mahfuzul Haque, Vidhya Selvanathan, M. Mottakin, D. K. Sarkar, Khurram Joya, Abdulaziz M. Alanazi, Takashi Suemasu, Ishtiaque M Syed, Md. Akhtaruzzaman","doi":"10.1007/s11664-024-11372-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11372-7","url":null,"abstract":"<p>Although perovskite solar cells (PSCs) have captured notable interest as a potential candidate for third-generation solar cells, due to their favorable optoelectronic properties, cost-effectiveness, and high efficiency, some issues related to device stability and toxicity of the perovskite (PSK) layer hinders the commercial viability of PSCs. The inherent instability of organic PSK halides and the toxicity of Pb has compelled researchers to focus on developing Pb-free all-inorganic PSCs by replacing the organic species with inorganic (Cs⁺) cations as a safer alternative. In this study, the SCAPS-1D simulator was employed to investigate the cell performances of all-inorganic Pb-free Cs-based PSCs with three different PSK layers (CsGeI₃, CsSnI₃, and Cs₂TiI₆) individually, where inorganic ZnO and CuSCN were used as the electron transport layer (ETL) and the hole transport layer (HTL), respectively. The Cs₂TiI₆-based PSC was found to have the best performance. Then, the defect tolerance level of the PSK layer and the impact of band offset on cell performances were investigated. The optimum values of the conduction band offset (CBO) and the valence band offset (VBO) were found to be 0 eV and between − 0.1 eV and 0 eV, respectively. Moreover, the effect of interface defects at the ETL/PSK and PSK/HTL interfaces on cell performance was also analyzed as a function of CBO and VBO and, for both cases, the interface defect tolerance limit was recorded as 10¹⁶ cm⁻². This study observed a high rate of recombination for negative values of CBO and VBO at the interfaces. Thus, these findings will guide researchers in developing high-performance PSCs with suitable inorganic Pb-free perovskite and charge transport layers.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}