Journal of Electronic Materials最新文献

{"title":"A Simple and Scalable Method for Preparing Natural Molybdenite-Based MoS2–Graphene Oxide Composite Anodes via Ultrasonic Exfoliation Combined with a Solvothermal Process","authors":"Hepeng Lu,&nbsp;Bohua Wu,&nbsp;Yukun Zhang,&nbsp;Tingxuan Dong,&nbsp;Qingyong Duan,&nbsp;Shuai Zhang,&nbsp;Sheshe Yang,&nbsp;Xiaoqin Wang,&nbsp;Jinhang Li,&nbsp;Zhen Li,&nbsp;Shanxin Xiong","doi":"10.1007/s11664-026-12686-4","DOIUrl":"10.1007/s11664-026-12686-4","url":null,"abstract":"<div><p>Starting from natural molybdenite concentrate, this study addresses the challenges of impurity content, compact layer stacking, and poor conductivity that hinder its use as a lithium-ion battery (LIB) anode. Impurities such as Si and Fe were effectively removed through a simple hydrothermal alkali leaching combined with acid leaching process. Few-layer MoS₂ was then obtained via liquid-phase exfoliation using N-methyl-2-pyrrolidone and isopropanol solvents. To enhance interfacial interaction and conductivity, MoS₂–Graphene oxide (GO) composites were synthesized through a solvothermal route. The effects of solvent ratio and GO content on the structure and electrochemical performance were systematically investigated. The optimal water/ethanol (1:5) solvent enabled uniform nanosheet exfoliation with a low charge-transfer resistance (R_ct = 45.1 Ω). The composite with 20 wt% GO delivered a high reversible capacity of 940.7 mAh g⁻¹ at 0.1 A g⁻¹, maintained 555.4 mAh g⁻¹ at 2.0 A g⁻¹, and retained 610 mAh g⁻¹ after 200 cycles at 0.5 A g⁻¹. The synergistic interaction between few-layer MoS₂ and the conductive GO network accelerates electron/ion transport and enhances structural stability, providing a sustainable route to upgrade natural molybdenite for high-performance LIB anodes.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"2969 - 2987"},"PeriodicalIF":2.5,"publicationDate":"2026-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147342118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Studies on the Impact of the Core-Shell Structures on the Optical Characteristics of Au@Cu2O Nanoparticles","authors":"Son Dinh Cao,&nbsp;Doanh Cong Sai,&nbsp;An Bang Ngac,&nbsp;I. S. Mahmoud,&nbsp;Mahmoud Ahmad,&nbsp;Hanh Hong Mai","doi":"10.1007/s11664-026-12690-8","DOIUrl":"10.1007/s11664-026-12690-8","url":null,"abstract":"<div><p>Nanoparticles (NPs) with metal@dielectric core@shell, nano-sized dimensions, and local surface plasmon resonance peaks (LSPR) have to play a vital role owing to their optical interaction and comprehensive array of applications in several fields, including information transmission, biomedicine, and other advanced technologies. This work examines the optical characteristics of core/shell nanoparticle structures that can be regulated via aggregation. These structures have Au nanoparticles (NP) measuring 16.6 nm in diameter, while the shell thickness ranges from <span>(24.6 pm 3.6)</span> to <span>(9.0 pm 1.7)</span> nm. The absorption spectra of the Au core-Cu₂O shell nanoparticles were analyzed using the boundary element method (BEM). The absorption cross-sections over various wavelengths of light were determined by solving the Maxwell equations. Both Ox- and Oz-axis polarizations of an incident plane wave are used to determine the core-shell Au@Cu₂O nanoparticles’ field enhancement. Factors such as the core-shell ratio, the particle’s morphologies, and the spacing between the particles are taken into consideration to evaluate how particle structures influence their optical properties. The particle system’s distribution and organization were also considered, along with an analysis of the impact of the particle arrangement and distribution within the particle system. The similarity between the calculation and experimental results underscores the accuracy of our simulation model.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"3161 - 3173"},"PeriodicalIF":2.5,"publicationDate":"2026-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving the Mechanical Properties of Sn-Bi Solder Alloy and the Strength of Solder Joints via Bi Content Tailoring and Ag Microalloying","authors":"Qian Zhou,&nbsp;Ming Zhao,&nbsp;Li Fu,&nbsp;Long Liu,&nbsp;Zhenxing Sheng,&nbsp;Guangxin Hu,&nbsp;Peng Gao,&nbsp;Jianhong Yi,&nbsp;Caiju Li","doi":"10.1007/s11664-026-12679-3","DOIUrl":"10.1007/s11664-026-12679-3","url":null,"abstract":"<div><p>The microstructure and mechanical performance of Sn-(<i>x</i>−<i>y</i>)Bi-<i>y</i>Ag (<i>x</i> = 30, 50 wt.%, <i>y</i> = 0, 0.5 wt.%) were investigated regarding the strength of solder joints. This system comprises Bi-rich and <i>β</i>-Sn phases. The increase in Bi content transformed the microstructure from co-occurrence of isolated blocky Bi-rich precipitates and a continuous network in the Sn-30Bi alloy to a continuous network in the Sn-50Bi alloy. Concurrently, the elongation (EL) was significantly enhanced whereas the ultimate tensile strength (UTS) decreased with increasing Bi content in the alloy. The enhanced EL and decreased UTS can be partly attributed to the disappearance of isolated blocky Bi-rich precipitates which lead to stress concentration. The enhanced EL of Sn-Bi alloys improves the resistance to thermal fatigue crack propagation in solder joints, whereas the preserved UTS remains adequate for low-temperature packaging applications. Notably, the addition of trace amounts of Ag homogenized the β-Sn matrix of the Sn-<i>x</i>Bi alloy, thereby effectively enhancing the UTS and EL. Furthermore, increasing the Bi content and Ag microalloying enhanced the shear strength of solder joints welded on Cu substrates. Cu₆Sn₅ layers were formed in all solder joints. After isothermal aging, increasing the Bi content and Ag microalloying inhibited Cu₆Sn₅ layer growth, potentially improving the solder joint reliability. With longer aging time, the fracture site of the solder joint was transferred from the solder matrix to the IMC layer, with a concomitant reduction in the shear strength.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"2538 - 2545"},"PeriodicalIF":2.5,"publicationDate":"2026-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Holistic Insight into the Zero Thermal Quenching Novel β-BaB2O4:Ce3+ Phosphor for Optoelectronic Applications","authors":"R. Kiran,&nbsp;S. Masilla Moses Kennedy,&nbsp;A. Princy,&nbsp;M. I. Sayyed,&nbsp;Aljawhara H. Almuqrin,&nbsp;Sudha D. Kamath","doi":"10.1007/s11664-025-12630-y","DOIUrl":"10.1007/s11664-025-12630-y","url":null,"abstract":"<div><p>In this study, we have synthesized novel β-BaB₂O₄:xCe³⁺ (<i>x</i> = 0.5, 0.75, 1, 1.25, and 2 mol.%) phosphors using the solid-state reaction method. Upon confirming the formation of the crystalline phase through x-ray diffraction (XRD) analysis, phosphors were optically optimized by examining the excitation spectra at an emission wavelength of 425 nm. For the optimized phosphor, the optical, thermal, and structural properties were thoroughly examined. A comprehensive analysis of diffuse reflectance spectra demonstrated a direct bandgap of 3.19 eV. The temperature-dependent emission showed 100% emission intensity retention up to 483 K, with stable colour coordinates. Temperature-dependent dominant wavelength also showed very little variation between 432.6 nm and 432.8 nm, and the colour purity was found to be nearly 100%. Finally, thermogravimetric analysis (TGA) confirmed the phosphor's exceptional thermal stability, with 98.9 wt.% of the sample remaining stable up to 500 K. In light of all these astonishing characteristics, the proposed phosphor can be further studied for multi-field applications.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"3144 - 3160"},"PeriodicalIF":2.5,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-025-12630-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Review on Superconducting Metamaterials: Modeling, Fabrication, and Applications in Quantum and RF Systems","authors":"Boris Joel Kenne Telezing,&nbsp;Jinxing Liu","doi":"10.1007/s11664-026-12683-7","DOIUrl":"10.1007/s11664-026-12683-7","url":null,"abstract":"<div><p>This article provides a thorough review of superconducting metamaterials, focusing on their theoretical foundations, fabrication methods, and areas of application. Although numerous studies have examined particular elements of superconducting devices or metamaterials independently, a comprehensive synthesis is absent. This paper provides a critical survey of key models, including effective-medium approaches, nonlinear circuit formulations, and quantum descriptions of SQUID-based (superconducting quantum interference device) meta-atoms, while evaluating their connections to experimental implementations. This study analyses advancements in fabrication techniques, including thin-film lithography and three-dimensional integration, while identifying scalability challenges and potential solutions. Applications are evaluated in the domains of quantum information, sensing, cloaking, and wireless power transfer. We conclude by identifying existing challenges and presenting a framework for future advancements. This review serves as a reference for established researchers and an accessible introduction for newcomers to the field of superconducting metamaterials.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"2511 - 2537"},"PeriodicalIF":2.5,"publicationDate":"2026-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Design of 3D Architecture and Cu2O Interface Engineering for Dendrite-free Lithium Metal Anodes","authors":"Wenyu Liao,&nbsp;Xuanting Guo,&nbsp;Xinyu Shen,&nbsp;Qinqin Xiong,&nbsp;Xiaoshi Hu,&nbsp;Haiying Qin","doi":"10.1007/s11664-026-12692-6","DOIUrl":"10.1007/s11664-026-12692-6","url":null,"abstract":"<div><p>Lithium metal batteries (LMBs) have emerged as a cornerstone of next-generation energy storage technologies due to their high energy density. However, practical applications are hindered by lithium dendrite growth and volume expansion at the lithium metal anodes (LMAs). To address these challenges, this study develops a novel current collector (Cu₂O/etched brass [EB]) integrating a three-dimensional (3D) porous brass framework (EB) with a lithiophilic Cu₂O layer, achieving synergistic structural and interfacial regulation. The 3D porous architecture mitigates local current density and accommodates volume expansion, while the Cu₂O layer enables low nucleation overpotential for homogeneous lithium deposition, thereby lowering the charge transfer resistance and effectively suppressing the formation of lithium dendrites and dead lithium. The assembled Cu₂O/EB-300@Li||LiFePO₄ full cell demonstrates 95% capacity retention with 99.1% coulombic efficiency (CE) after 300 cycles, along with high-rate capability. This work provides an innovative strategy for achieving high-energy-density and long-cycling LMBs.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"2763 - 2775"},"PeriodicalIF":2.5,"publicationDate":"2026-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Elemental Depth Profiling in Perovskite Solar Cells by Rutherford Backscattering Spectrometry","authors":"Taimoor Hussain,&nbsp;Turab Ali Abbas,&nbsp;Kong Liu,&nbsp;Muhammad Sultan","doi":"10.1007/s11664-026-12673-9","DOIUrl":"10.1007/s11664-026-12673-9","url":null,"abstract":"<div><p>Metal halide perovskites exhibit remarkable properties for photovoltaic applications, yet their susceptibility to ion migration within perovskites is a critical phenomenon that profoundly impacts their functionality and stability. Past investigations have generally focused on indirect or destructive experimental techniques used for probing ion migration. In this perspective, we employed the nondestructive technique, Rutherford backscattering spectroscopy (RBS), to resolve the elemental composition in different layers of perovskite solar cells (PSCs) and used it to disentangle the extrinsic and intrinsic ion migration. We demonstrate here the probing capacity of RBS for two different types of PSCs, including inorganic lead halide perovskites and mixed-cation lead halide perovskites, and a complete device. The study highlights RBS as a reliable analytical tool for tracking elemental redistribution in fresh or aged devices. Furthermore, we discusses the diverse methodologies employed to study extrinsic and intrinsic ion migration and interlayer diffusion between various layers of perovskite devices, ranging from experimental techniques to XRUMP and SIMNRA simulations.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"2581 - 2587"},"PeriodicalIF":2.5,"publicationDate":"2026-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147340924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical Investigation of the Interaction of DNA Nucleobases on Monolayer 1H-WSe2 and Janus 1H-WSSe for Advanced Sequencing Technology: A Density Functional Theory Study","authors":"Muhammad Oktavian Dharma Setyawan,&nbsp;Nailus Syarifah,&nbsp;Phahul Zhemas Zul Nehan,&nbsp;Andyan Rafi Setopratama","doi":"10.1007/s11664-026-12671-x","DOIUrl":"10.1007/s11664-026-12671-x","url":null,"abstract":"<div><p>The growing demand for advanced DNA sequencing technologies has stimulated the exploration of novel two-dimensional (2D) materials with exceptional physicochemical properties. In this study, the interactions between DNA nucleobases (adenine, thymine, guanine, and cytosine) and 1H-WSe₂ and Janus 1H-WSSe monolayers were investigated using density functional theory with the OpenMX code. The structural, electronic, and optical properties of the nucleobase–substrate systems were systematically analyzed to assess their potential for sequencing applications. Structural relaxation results reveal physisorption behavior, evidenced by minimal bond length changes upon adsorption. Binding energy calculations indicate that guanine exhibits the strongest interaction with 1H-WSe₂ (G &gt; T &gt; A &gt; C), whereas thymine shows the strongest binding on Janus 1H-WSSe (T &gt; A &gt; C = G). Charge density difference and Mulliken population analyses confirm weak charge transfer dominated by van der Waals interactions. Density-of-states analysis demonstrates that adsorption does not alter the semiconducting nature of either substrate, preserving their intrinsic electronic characteristics. Optical analyses reveal anisotropic dielectric responses, where pristine 1H-WSe₂ exhibits zero-crossing energies at approximately 6.29 eV and 7.19 eV for the out-of-plane (<i>E</i>∥<i>c</i>) polarization and 8.37 eV and 9.03 eV for the in-plane (<i>E</i>⊥<i>c</i>) polarization. Janus 1H-WSSe shows slightly higher values at around 6.74 and 7.66 eV (<i>E</i>∥<i>c</i>) and 8.81 and 9.75 eV (<i>E</i>⊥<i>c</i>). These results highlight the fact that both materials maintain high optical responsiveness with tunable plasmonic excitations upon nucleobase adsorption. Overall, monolayer 1H-WSe₂ and Janus 1H-WSSe exhibit stable physisorption and favorable optoelectronic features, making them promising candidates for next-generation DNA sequencing platforms.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"3016 - 3033"},"PeriodicalIF":2.5,"publicationDate":"2026-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147340925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrostatic Analysis of AlN/GaN HEMTs Using β-Ga2O3 Buffer on SiC and β-Ga2O3 Wafers for 5G/6G Wireless Infrastructure and Future Sub-THz Applications","authors":"B. Mounika,&nbsp;J. Ajayan,&nbsp;Amit Krishna Dwivedi,&nbsp;Pankaj Sharma,&nbsp;Shuxiang Sun","doi":"10.1007/s11664-026-12678-4","DOIUrl":"10.1007/s11664-026-12678-4","url":null,"abstract":"<div><p>In this work, a recessed T-gated AlN/GaN-HEMT with a β-Ga₂O₃ buffer is proposed and compared with conventional buffer configurations, including Fe-doped GaN/AlGaN structures with and without back-barriers (BBs), to evaluate their influence on direct-current (DC) and radiofrequency (RF) performance. The electrostatic analysis of HEMT with β-Ga₂O₃-buffer reveals a peak <i>g</i>_m of 431.5 mS/mm, an <i>I</i>_{d_peak} of 1.90 A/mm, an <i>I</i>_{ds_sat} of 2.42 A/mm, and an <i>f</i>_T of 197.1 GHz owing to better carrier confinement, reduced parasitic effects, minimal buffer leakage, and the high crystalline quality of the β-Ga₂O₃/GaN interface. We investigated the impact of barrier material selection and observed that an AlN barrier offered better performance, attributed to stronger polarization-induced charge, followed by Al_0.83In_0.17N, and Al_<i>x</i>​Ga_1−<i>x</i>N, with a gradual decline as the Al composition decreased. The AlN/GaN/β-Ga₂O₃/β-Ga₂O₃-HEMT with <i>L</i>_g = 40 nm delivered a maximum <i>g</i>_m of 538.5 mS/mm, an <i>I</i>_{d_peak} of 3.22 A/mm, and an <i>f</i>_T of 469.6 GHz, along with an <i>I</i>_{ds_sat} of 3.49 A/mm, benefiting from improved lattice compatibility. Notably, this structure eliminates the need for additional BB layers and AlN nucleation, offering both performance and fabrication advantages. The AlN/GaN/β-Ga₂O₃/SiC-HEMT also delivered competitive performance, providing a compelling combination of thermal conductivity, material stability, and integration feasibility, while remaining cost-effective. These results offer valuable design insights for AlN/GaN-HEMT development and contribute to ongoing efforts toward enhancing GaN-HEMT performance through the integration of ultrawide bandgap (UWBG) β-Ga₂O₃ buffers, making it highly suitable for next-generation 5G/6G wireless infrastructure, sub-THz high-speed communication systems, and advanced radar applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"3203 - 3220"},"PeriodicalIF":2.5,"publicationDate":"2026-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical and Structural Characterization of MAPbBr3 Thin Films Synthesized via Emulsion–Demulsion for PeLED Applications","authors":"R. Adithya Nath,&nbsp;Aruna Raj,&nbsp;Jishad A. Salam,&nbsp;Akhil M. Anand,&nbsp;R. Jayakrishnan","doi":"10.1007/s11664-025-12659-z","DOIUrl":"10.1007/s11664-025-12659-z","url":null,"abstract":"<div><p>Methylammonium lead bromide (MAPbBr₃) nano-suspensions were synthesized through a simple, low-temperature emulsion–demulsion route, offering a scalable alternative to conventional hot-injection or ligand-assisted methods. These nano-suspensions enabled the deposition of uniform MAPbBr₃ thin films on rigid substrates via spin coating. Structural analysis confirmed the formation of a cubic perovskite phase, supported by XRD, Raman spectroscopy, and TEM. The films exhibited a direct bandgap of ~ 2.23 eV and intense, color-stable green photoluminescence centered at 536 nm. AFM revealed a relatively high surface roughness (RMS ~ 111.6 nm), while XPS verified the expected elemental composition and valence states. When integrated onto 380 nm UV chips, the MAPbBr₃ films functioned as efficient down-conversion layers, producing a bright green emission with a high color purity of 94.5% and CIE coordinates of (0.3064, 0.6663). This study demonstrates a facile, solution-processed pathway for perovskite-based green emitters, highlighting their potential as low-cost alternatives to rare-earth phosphors in solid-state lighting applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"3130 - 3143"},"PeriodicalIF":2.5,"publicationDate":"2026-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147340530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}