Journal of Electronic Materials最新文献

{"title":"Symmetry-Protected Two-Dimensional Half-Semi-Metal NiVS6As2 Monolayer","authors":"Meng-xue Zhu, Wei-xiao Ji, Hui-wen Zhu, Qiang Cao, Bao-min Zhang","doi":"10.1007/s11664-024-11321-4","DOIUrl":"https://doi.org/10.1007/s11664-024-11321-4","url":null,"abstract":"<p>Two-dimensional (2D) half-metallic magnets are expected to achieve breakthroughs in the field of spintronics and quantum computation due to their 100% spin polarization and non-dissipative ballistic transport characteristics. However, the current availability of practical applications for these materials is limited. In this paper, a new 2D material NiVS₆As₂ is predicted based on density functional theory (DFT). It has a ferromagnetic ground state with a high Curie temperature, <i>T</i>_<i>C</i> = 150 K and half-semi-metal (HSM) band structure protected by a structural symmetry degeneracy point on the Fermi surface, which can be controlled by an electric field and strain. When an out-of-plane electric field is applied, NiVS₆As₂ shows a Chern insulator with a quantum anomalous Hall (QAH) effect. These results expand the family of 2D magnetic semimetals, and provide new theoretical inspiration for understanding the protection of degenerate point symmetry.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141881135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cleanroom-Free Fabrication of Flexible Microneedle Array Patches for Minimally Invasive Monitoring of Dopamine","authors":"Vishnu Rajendiran, Do Hwan Kim, Akshay Krishnakumar, Ponnusamy Dhivya, Kazuyoshi Tsuchiya, Yuta Sunami, Ganesh Kumar Mani","doi":"10.1007/s11664-024-11338-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11338-9","url":null,"abstract":"<p>The development of electrochemical sensors for detecting neurotransmitters using wearable electronics has recently gained significant attention due to their painless nature. However, such wearable electronics that enable topical sweat detection of neurotransmitters fall short in accuracy, as this does not reflect the actual physiological conditions. Interstitial fluid provides a more accurate and reliable medium for measuring neurotransmitter levels, closely paralleling those found in blood. In this scenario, the present work focuses on the development of flexible metal oxide-based microneedle array patches for minimally invasive detection of dopamine (DA). A polydimethylsiloxane (PDMS)-based microelectrode array was fabricated by transferring a master mold from a laser-punched stainless-steel template followed by Au sputtering. Next, the developed flexible electrode surface was modified with hydrothermally produced ZnO nanoparticles (ZNP) for DA detection. A 3 × 3 microneedle array platform showed sensitivity of 7.654 µA µM⁻¹ towards DA concentrations in a clinically relevant range of 1–100 µM in phosphate-buffered saline (PBS) electrolyte (pH 8). This proof-of-concept microneedle array platform could serve as an initial step towards the development of a painless and facile way of monitoring DA levels.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141881024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring Influential Factors Affecting Baseplate Distortion and Residual Stress in Insulated-Gate Bipolar Transistor (IGBT) Modules During Reflow Soldering","authors":"Shang Gao, Chunzhuang Teng, Haoxiang Wang, Honggang Li, Renke Kang","doi":"10.1007/s11664-024-11341-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11341-0","url":null,"abstract":"<p>The welding of a direct-bonded copper (DBC) substrate to the baseplate in insulated-gate bipolar transistor (IGBT) modules often induces distortion and residual stress within the baseplate, consequently impacting the operational reliability of the IGBT module. Therefore, a comprehensive analysis of the factors influencing baseplate distortion and residual stress during the reflow soldering process is imperative. This study employs a finite element simulation model to investigate the effects of varying thicknesses of IGBT module components, reflow temperature curve settings, and types of material on baseplate distortion and residual stress. The simulation results highlight that the material of the IGBT module components exerts the most substantial influence on baseplate distortion and residual stress, followed by component thickness, whereas the impact of the reflow temperature curve setting is comparatively minor. The analysis of these influencing factors offers valuable insights for optimizing component thickness selection, material choices for IGBT modules, and reflow temperature curve settings. Moreover, it serves as a practical guide for enhancing production processes and minimizing associated costs.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"152 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141881025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Physical, and Optical Characteristics and γ-Ray Protection Efficacy of Fluoroboro-Tellurite Glasses Reinforced with La3+ Ions","authors":"Norah A. M. Alsaif, Nada Alfryyan, Hanan Al-Ghamdi, S. M. Kotb, S. Talaat, A. M. Abdelghany, Yasser S. Rammah, A. S. Abouhaswa, M. S. Sadeq","doi":"10.1007/s11664-024-11346-9","DOIUrl":"https://doi.org/10.1007/s11664-024-11346-9","url":null,"abstract":"<p>Fluoroboro tellurite glasses containing La₂O₃ with nominal composition of 43B₂O₃ + 33TeO₂ + (12−<i>x</i>)BaF₂ + 12Na₂O + <i>x</i>La₂O₃ <i>x</i> = 0 (La0.0), 0.5 (La0.5), 1 (La1.0), 2 (La2.0), and 3 (La3.0) mol% were fabricated using the melt quenching technique. The effects of La³⁺ ion content inclusion in the prepared glass matrices, including the structural, physical, and optical properties and <i>γ</i>-ray protection efficacy, were then explored. The amorphous state of the La-glasses was verified by the broad and diffuse dispersion of all XRD patterns at low angles. As La₂O₃ additives were added from 0 to 3 mol%, the density (<i>ρ</i>) increased from 3.6243 g/cm³ to3.8743 g/cm³ and the molar volume (<i>V</i>_m) decreased from 30.6488 cm³/mol to 29.8364 cm³/mol. Lanthanum ion concentrations (<i>N</i>_La) increased from 0 for La0.0 glasses to 312.1103 × 10²⁰ cm⁻³ for La3.0 glasses. The polar radius decreased from 0 Å to 3.7813 Å, whereas the ligand field strength between La ions and their surroundings increased from 0 Å⁻² to 18.1839 Å⁻². Values of optical gap (<i>E</i>_g) varied from 3.07 eV to 2.82 eV. The values of linear refractive index (<i>n</i>₀) varied from 2.383 to 2.443, whereas values of nonlinear refractive index (<i>n</i>₂) changed from 5.16 × 10⁻¹¹ esu to 6.40 × 10⁻¹¹ esu for La0.0 and La3.0 glass specimens. Mass (MAC) and linear (LAC) attenuation coefficients were lowest in La0.0 glasses and highest in La3.0 glasses. The trend of the mean free path (MFP) of La-glasses was inverse to that of the LAC and MAC. The order of the MFP trend, which indicates the influence of La₂O₃ in the glass matrix, was typically (MFP)_La0.0 &gt; (MFP)_La0.5 &gt; (MFP)_La1.0 &gt; (MFP)_La2.0 &gt; (MFP)_La3.0. Results show that the recommended glasses appear to be promising materials for various optical devices and radiation protection applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"79 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141881026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polycrystalline T- and H-Nb2O5 Thin Films Prepared by Pulsed Laser Deposition: Impact of Laser Fluence","authors":"Evan T. Salim, Suhair R. Shafeeq, Mohammed Jalal AbdulRazzaq, Makram A. Fakhri, Ahmad S. Azzahrani, Ali Basem, Forat H. Alsultany, Subash C. B. Gopinath","doi":"10.1007/s11664-024-11322-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11322-3","url":null,"abstract":"<p>Polycrystalline structures of T-Nb₂O₅ and a remarkable H-Nb₂O₅ structure were successfully obtained in this work. This was achieved using a Nd:YAG laser in a pulsed laser deposition system at laser fluence values of 9.3, 13.4, 16.2, 21, and 25.2 J cm⁻². Raman bands of the prepared films are shown and discussed. The optical bandgaps were estimated at 4.81 eV, 4.73 eV, 3.41 eV, 3.29 eV, and 3.21 eV. Photoluminescence (PL) analyses showed agreement with the estimated indirect bandgaps calculated from Tauc’s plot for each prepared film. The surface average roughness and root-mean-square (RMS) roughness were also determined and are discussed. The surface morphology as illustrated by field-emission scanning electron microscopy (FE-SEM) reveals the obvious impact of laser energy density on the prepared films. Energy-dispersive x-ray (EDX) analyses revealed the highest stoichiometry attributed to a laser fluence of 21 J cm⁻².</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rare Earth Substitution in Perovskite BiFeO3 Multiferroic: Comparative Study of Structural, Magnetic, and Optical Properties","authors":"Sourabh Sharma, Ashok Kumar, O. P. Thakur, Priya Saharan","doi":"10.1007/s11664-024-11333-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11333-0","url":null,"abstract":"<p>In this study, BiFeO₃ (BFO) and Er³⁺-, La³⁺-, and Nd³⁺-substituted BFO were synthesized using Pechini’s modified sol–gel auto-combustion route. Comprehensive investigations were conducted on the structural, magnetic, and optical properties of the samples. X-ray diffraction and Rietveld refinement analysis provided insights into the crystal structure, which was found to be distorted rhombohedral for all the samples except for BEFO (Bi_0.95Er_0.05FeO₃), which was orthorhombic. The crystallite size and strain were calculated by strain-size plots. Fourier transform infrared spectroscopy confirmed the crystallinity and characteristic FeO₆ peaks of perovskites in all the samples. Microstructural investigations using field-emission scanning electron microscopy imaging revealed the morphological features and particle size distribution. The magnetization–hysteresis (<i>M–H</i>) loop demonstrated that the <i>M</i>_s and <i>M</i>_r values decreased after the incorporation of rare earth (RE) ions in the BFO lattice, while electron paramagnetic resonance analysis elucidated the magnetic interactions within the materials. In addition, UV direct reflectance spectroscopy coupled with Kubelka–Munk plot analysis facilitated the determination of band gap energy values, which were in the range of 2.11–2.22 eV. The integration of these diverse characterization techniques offers a holistic understanding of the structural, morphological, magnetic, and optical properties of BFO and its RE-substituted variants. This multifaceted approach not only enriches our knowledge of these materials but also paves the way for their diverse applications in sensors, spintronics, actuators, and photocatalysts for environmental remediation.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silver-Based Catalytic Materials Prepared via Electrochemical Reconstruction for Efficient Carbon Dioxide Reduction","authors":"Fangshi Fan, Wei Ding, Lingjie Zhang, Junjun Xu, Weiwei Cai, Ningzhong Bao","doi":"10.1007/s11664-024-11323-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11323-2","url":null,"abstract":"<p>Silver-based catalytic materials have garnered considerable attention due to their high selectivity towards carbon monoxide (CO) in the electrochemical reduction (ECR) of CO₂. However, the fabrication of silver-based ECR catalysts with high product selectivity and low competitive reaction activity using facile methods remains challenging. This study employed in situ electrochemical reconstruction to design high-performance silver-based catalytic materials for ECR, exploring performance enhancement mechanisms. Low-temperature electrochemical reconstruction was used to prepare silver-based catalysts, and the effects of metal ion chelating agents including ethylenediaminetetraacetic acid, citric acid, and sodium citrate were also investigated. Results showed that Ag-SC, namely the catalysts fabricated with sodium citrate as chelating agent, exhibited highly selective CO production, with faradaic efficiency of 93.23% at −0.85 V (versus reversible hydrogen electrode, RHE) and CO partial current density of −7.92 mA cm⁻². Electrochemical impedance analysis confirmed low electron transfer resistance of Ag-SC, with 14.54 Ω, indicating superior electron transfer capability, and high ECR activity. Ag-SC also demonstrated excellent hydrophobicity, suppressing the competitive hydrogen evolution reaction and enhancing CO selectivity. In situ electrochemical reconstruction thus offers a simple, low-cost method for preparing silver-based catalysts tailored for ECR, with practical implications for electrode fabrication and catalytic material design.</p><h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141872621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Compositional Engineering on PTB7-Th:PC71BM Capacitive Humidity Sensor Performance","authors":"Noshin Fatima, Lih Wei Lim, Sarah Bukhari, Ehsan Raza, Fakhra Aziz, Zarbad Shah, Zubair Ahmad, Afzal Kamboh, Muhammad Tahir, Fahrettin Yakuphanoglu, Azzuliani Supangat, Khaulah Sulaiman","doi":"10.1007/s11664-024-11337-w","DOIUrl":"https://doi.org/10.1007/s11664-024-11337-w","url":null,"abstract":"<p>The current investigation focuses on the development of capacitive humidity sensors utilizing an organic polymer blend of poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b;4,5-b′]dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)] (PTB7-Th) and [6,6]-phenyl-C71-butyric-acid methyl ester (PC₇₁BM), which were successfully achieved. A cost-effective spin-coating technique was employed to produce surface-type sensors in the Al/PTB7-Th:PC₇₁BM/Al horizontal geometry. The investigation focuses on the capacitive behavior of the devices under ambient conditions, specifically at room temperature. The devices are subjected to an alternating current operational bias of 1 V, while the relative humidity (RH) is varied within the range of 20–95%. The sensors are examined at frequencies of 100 Hz, 1 kHz, 10 kHz, and 100 kHz. Specifically, the sensors demonstrate improved sensitivity to changes in capacitance in relation to relative humidity when operating at a frequency of 100 Hz. In addition, an optimal volumetric ratio of 1.5:1 is selected for PTB7-Th to PC₇₁BM. The optimized composite sensor demonstrates superior performance, exhibiting minimal hysteresis of 6.16% and significant sensitivity of 1.58 pF/% RH. In addition, response and recovery times of 2 s and 3 s, respectively, are obtained. The results of investigations demonstrate that the composite sensor exhibits significant improvements in sensing parameters compared to single-material sensors. As a result, the composite sensor has great potential for use in advanced sensor applications, especially in the education sector in underdeveloped countries.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Electronic Structure, and Electrical Properties of Pure and Vanadium-Doped CuCrO2 Thin Films","authors":"Bhagwanti Bishnoi, Aditya Sharma, Anju Dhillon, Nishant Barot, P. K. Mehta, Keun Hwa Chae","doi":"10.1007/s11664-024-11342-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11342-z","url":null,"abstract":"<p>Delafossite CuCrO₂ (CCO), CuCr_0.96V_0.04O₂ (CCVO) thin films were successfully prepared on Si (100) substrates, using the pulsed laser deposition technique. The effect of doping was studied using x-ray diffraction (XRD), x-ray absorption spectroscopy (XAS), temperature-dependent resistivity measurements, and <i>I</i>–<i>V</i> characteristics. The XRD results confirmed the single-phase rhombohedral structure of the prepared thin films, and the XAS results conveyed the mixed Cu⁺ and Cu²⁺ ions in the CCVO and CCO samples. The valence state of Cr was unaltered under the doping effects and remained + 3 (i.e., Cr⁺³). The modified hybridization of the O 2<i>p</i> orbitals with the metal <i>d</i> (V, Cr,) orbitals was confirmed in the O K-edge spectra. Insertion of V⁵⁺ ions in the CCO lattice introduced an electron doping effect. Thus, the basic <i>p</i>-type character of CCO was affected by the V doping and, therefore, increases in the resistivity or decreases in the <i>p</i>-type character were observed in the <i>I</i>–<i>V</i> measurements. From this study; the method of selective mono-doping can be a useful tool to tailor the bandgap and the type of conductivity in other delafossite semiconductors.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Removal of Organic Dye by Ti-Doped Bi2O3/MMT with Enhanced Visible-Light Photocatalytic Activity","authors":"Xiulong Shi, Biyang Tuo, Cheng Gan, Yaxin Deng, Xvjun Zhang","doi":"10.1007/s11664-024-11340-1","DOIUrl":"https://doi.org/10.1007/s11664-024-11340-1","url":null,"abstract":"<p>Ti-doped Bi₂O₃/montmorillonite (TBM) was prepared by chemical solution decomposition and used to conduct adsorption and degradation experiments. The materials were characterized by detection methods such as XRD, SEM, BET, XPS, UV-Vis DRS, etc. The results showed that doping Ti can inhibit the growth of Bi₂O₃ grains and destroy the layered structure of montmorillonite. Furthermore, doping Ti can improve the adsorption ability and reduce the band gap of the photocatalyst, thus enhancing the photocatalytic degradation performance. When the Ti doping ratio was 4% (4TBM), the material dosage was 1.0 g/L, and the initial concentration was 20 mg/L, 4TBM has the best photocatalytic degradation effect on reactive brilliant blue KN-R, with a removal rate of 98.17%. The photocatalytic degradation process of reactive brilliant blue KN-R follows the first-order kinetic model. This study not only has great significance for environmental remediation but also provides an optical material with excellent performance for the optical field.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141863408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}