Journal of Electronic Materials最新文献

{"title":"First-Principles Study of the Chalcogenide Double Perovskites A2YTaSe6 (A = Ca, Sr, and Ba) for Solar Cell and Electronic Applications","authors":"Arrar Amina,&nbsp;Bendjilali Hadjer,&nbsp;Zerrouki Otmane,&nbsp;Ghaleb Mohamed,&nbsp;Hadji Chikh Ali","doi":"10.1007/s11664-026-12685-5","DOIUrl":"10.1007/s11664-026-12685-5","url":null,"abstract":"<div><p>This study focuses on the structural, electronic, optical, elastic, thermoelectric, and thermodynamic properties of chalcogenide double perovskites A₂YTaSe₆ (A = Ca, Sr, and Ba) using density functional theory (DFT) calculations with the generalized gradient approximation Perdew–Burke–Ernzerhof (GGA-PBE) and modified Beck–Johnson potential (mBJ-GGA) approach. The study reveals that these compounds exhibit stability in the cubic perovskite structure with calculated optimized lattice constants of 10.4717 Å (Ca₂YTaSe₆), 10.586 Å (Ba₂YTaSe₆), and 10.5245 (Sr₂YTaSe₆), particularly in the nonmagnetic phase (NM), while their energies of formation are found to be −2.94 eV, −2.81 eV, and −2.91 eV for Ca₂YTaSe₆, Sr₂YTaSe₆, and Ba₂YTaSe₆, respectively. All three compounds display semiconducting nature with direct bandgaps at high-symmetry points <span>((varGamma - varGamma ))</span> ranging from 1.19 eV (Ca₂YTaSe₆) to 1.24 eV (Ba₂YTaSe₆) and 1.26 eV (Sr₂YTaSe₆). Also, the positive elastic constants confirm that the three selected compounds are mechanically stable, with high bulk modulus and shear resistance. Similarly, the three-dimensional (3D) graphical representations demonstrate the anisotropic nature of the materials. Optical analysis, including the absorption coefficient, reflectivity, refractive index, and dielectric function, reveals strong absorption in the visible and near-ultraviolet (UV) regions, supporting their suitability for photovoltaic and electronic applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3638 - 3656"},"PeriodicalIF":2.5,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions","authors":"Jo‘shqin Shakirovich Abdullayev,&nbsp;Jonibek Shakirovich Abdullayev,&nbsp;Ibrokhim Bayramdurdiyevich Sapaev,&nbsp;Jamoliddin Inotullaevich Razzokov,&nbsp;Davron Aslonqulovich Juraev,&nbsp;Ebrahim E. Elsayed","doi":"10.1007/s11664-026-12702-7","DOIUrl":"10.1007/s11664-026-12702-7","url":null,"abstract":"<div><p>This study presents a comprehensive investigation of the composition (<span>(Cd)</span> mole fraction m, <span>( 0 , &lt; , m , &lt; , 1)</span>) and temperature-dependent (20–400 K) optoelectronic and electrophysical properties of <span>(p{text{Si}}/n{text{Cd}}_{m} {text{Z}}_{1 - m} {text{S}})</span> heterojunctions. A hybrid approach combining analytical modeling, numerical simulations, and experimental validation was employed to capture the effects of incomplete dopant ionization, dielectric bowing, and temperature on key device parameters. Standard doping concentrations of <span>(p , = , 1 times 10^{16} {text{cm}}^{ - 3})</span><span>(p - {text{Si}})</span> and <span>(n , = , 4 times 10^{16} {text{cm}}^{ - 3})</span><span>(n{text{Cd}}_{m} {text{Z}}_{1 - m} {text{S}})</span> were used. The study quantifies temperature- and composition-dependent bandgap energy <span>(Egleft( {T,m} right))</span>, Debye temperature <span>(Theta left( m right))</span>, built-in electric field <span>(Eleft( {T,m,x} right))</span>, and junction capacitance. As <span>({text{Cd}})</span> content increases, the bandgap of <span>(n{text{Cd}}_{m} {text{Z}}_{1 - m} {text{S}})</span> decreases from ~3.6 eV (<span>({text{ZnS}})</span>-rich) to ~2.42 eV (<span>({text{CdS}})</span>-rich), while Si maintains a thermally stable bandgap (~ 1.1–1.17 eV), resulting in a favorable type-II band alignment (<span>(Delta Eg , &gt; , 1.25,eV)</span>). The decrease in <span>(Theta left( m right))</span> enhances phonon scattering and modifies recombination behavior. The derived analytical expression for <span>(Eleft( {T,x} right))</span> explicitly incorporates incomplete ionization, enabling prediction of space charge and electric field distribution at cryogenic temperatures. The model shows excellent agreement with experimental data, emphasizing the critical role of temperature and composition in charge transport. These results highlight the potential of <span>(p{text{Si}}/n{text{Cd}}_{m} {text{Z}}_{1 - m} {text{S}})</span> heterostructures for high-performance optoelectronic devices operating under variable thermal and vibrational conditions.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3795 - 3806"},"PeriodicalIF":2.5,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Pre-Sintering Temperature on Microstructure of c-Axis-Oriented M-Type Hexaferrite","authors":"Zhicong Chen,&nbsp;Yingli Liu,&nbsp;Shifan Lu,&nbsp;Weian Zhao,&nbsp;Yang Xiao,&nbsp;Jie Li,&nbsp;Pengjie Zhang","doi":"10.1007/s11664-025-12657-1","DOIUrl":"10.1007/s11664-025-12657-1","url":null,"abstract":"<div><p>Different pre-sintering temperatures have a profound effect on the phase formation and grain activity of polycrystalline M-type hexaferrite. In this study, a conventional ceramic process was employed to synthesize polycrystalline M-type hexaferrite, BaFe₁₂O₁₉ (BaM), which was pre-sintered at 1100°C, 1150°C, 1200°C, 1250°C, and 1300°C. X-ray diffraction (XRD) analysis showed that BaM pre-sintered above 1100°C successfully formed a single-phase polycrystalline structure, and its lattice constants exhibited a gradual increase with increasing pre-sintering temperature. In addition, XRD measurements of the magnetically oriented samples revealed a high orientation factor (<i>f</i>_L), confirming the development of a strong <i>c</i>-axis-aligned crystallographic texture. The average particle size of the pre-sintered powder increased monotonically from 0.65 μm to 1.22 μm, and when the pre-sintering temperature was greater than 1200°C, significant agglomeration of the polycrystalline particles began to occur. The green bodies, pressed under a magnetic field, exhibited <i>c</i>-axis grain alignment. Scanning electron microscopy (SEM) images of the sintered samples show that the grain size distribution was narrower at a pre-sintering temperature of 1200°C, with fewer pores, resulting in the lowest measured porosity (6.5%). The permittivity (<i>ε</i>′) of the sintered body mainly decreased with increasing temperature, while tan<i>δ</i> remained essentially unchanged. Vibrating-sample magnetometry (VSM) measurements of the magnetically oriented sintered samples indicated that a pre-sintering temperature of 1200°C resulted in the highest magnetic anisotropy field (15,558 Oe). Overall, the sample pre-sintered at 1200°C exhibited the most uniform grain size distribution, the lowest porosity, and the highest magnetic anisotropy field, making this condition the most favorable for fabricating self-biased microwave circulators operating at high frequencies.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3594 - 3602"},"PeriodicalIF":2.5,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Comparative DFT Study of the Adsorption of SF6 Decomposition Gas Species (SO2, SO2F2, and SOF4) on Si- and Al-Modified MoSTe Nanosheets: Application to Gas Sensors","authors":"Qamar Abuhassan,&nbsp;Ahmed Aldulaimi,&nbsp;Omayma Salim Waleed,&nbsp;G. PadmaPriya,&nbsp;S. Supriya,&nbsp;Subhashree Ray,&nbsp;Renu Sharma,&nbsp;Zokir Matniyozov,&nbsp;Akmal Abilkasimov,&nbsp;Saodatkhon Ibragimova,&nbsp;Aseel Smerat","doi":"10.1007/s11664-026-12693-5","DOIUrl":"10.1007/s11664-026-12693-5","url":null,"abstract":"<div><p>This study used density functional theory to investigate the impacts of surface modification of MoSTe monolayers by Si and Al atoms. Subsequently, the monolayers were applied for the adsorption of SF₆ decomposition gas species (SO₂, SO₂F₂, and SOF₄) due to the good structural stability of Al- and Si-modified MoSTe substrates. Noticeable interaction between the Al and Si atoms and the MoSTe nanosheet was also revealed using the electron density accumulations along the newly formed bonds. These findings reveal that SO₂, SO₂F₂, and SOF₄ gases undergo chemical adsorption on the Si-modified MoSTe substrates. The significant accumulation of charge density near the adsorbed SO₂, SO₂F₂, and SOF₄ molecules highlights the good interaction of gas over the Si-modified MoSTe substrate. This work outlines a promising gas-sensing technique based on Si-modified MoSTe monolayers when exposed to SF₆ decomposition product molecules, highlighting its potential for detection applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3627 - 3637"},"PeriodicalIF":2.5,"publicationDate":"2026-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoanode Design for Dye-Sensitized Solar Cells: Advancements in Metal Oxides, Nanostructures, and Hybrid Composites","authors":"Aqsa Memon,&nbsp;Ali Bux,&nbsp;Naveed Mengal,&nbsp;Samander Ali Malik,&nbsp;Iftikhar Ali Sahito,&nbsp;Anam Ali Memon","doi":"10.1007/s11664-026-12688-2","DOIUrl":"10.1007/s11664-026-12688-2","url":null,"abstract":"<div><p>The increasing interest in renewable energy has accelerated the advancement of photovoltaic (PV) technologies. Owing to low cost, flexibility, and versatility, dye-sensitized solar cells (DSSCs) have always remained the center of attention. The key to DSSC performance is the photoanode since it involves dye adsorption, electron transport, and light harvesting. This review covers the development of photoanode materials for DSSCs and how the transition from conventional metal oxides has resulted in high-performance carbon-based, transition metals and polymer composites. It discusses the influence of key material properties such as surface area, electron transport, light scattering layer, and chemical stability on DSSCs performance. It further discusses the morphology of metal oxides from zero-dimensional to three-dimensional (0D–3D) and their composites, explaining how doping and nanostructures change their optoelectronic characteristics. Hybrid materials made of metal oxides combined with carbon-based materials, transition metals, and polymers are also explored, and how these improve conductivity, quench recombination, and increase absorption of light. With insights taken from the latest publications, the current review defines recent limitations, promising experimental strategies, and directions of research in the future for high-efficiency and scalable photoanodes. The goal is to guide the development of future DSSCs that are high-performance as well as commercially viable.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3349 - 3368"},"PeriodicalIF":2.5,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mean-Field Modeling of Magnetocaloric and Magnetic Properties in Pb-Substituted PrSr1−xPbxMn2O6 (x = 0.4, 0.5, 0.6) Double-Perovskite Manganites","authors":"Beriham Basha,&nbsp;Mohamed Hsini,&nbsp;Fatma Dhaouadi,&nbsp;Fatma Aouaini","doi":"10.1007/s11664-025-12661-5","DOIUrl":"10.1007/s11664-025-12661-5","url":null,"abstract":"<div><p>This work investigates the magnetocaloric effect, characterized by the magnetic entropy change <span>(- Delta S_{{text{M}}} left( {H,T} right))</span>, using isothermal magnetization data for PrSr_1−<i>x</i>Pb_<i>x</i>Mn₂O₆ (<i>x</i> = 0.4, 0.5, and 0.6), denoted as Pb04, Pb05, and Pb06. The analysis was performed using experimental magnetization isotherms, <i>M</i>(<i>H</i>, <i>T</i>), and mean-field theory (MFT). The exchange field, <i>H</i>_exch, spontaneous magnetization, <i>M</i>_S, and saturation magnetization, <span>(M_{0})</span>, were determined through scaling analysis, Arrott plots, and entropy–magnetization correlations. <i>H</i>_exch exhibited a predominantly linear dependence on <i>M</i>, with negligible cubic contribution, yielding exchange parameter λ₁ values of 1.71, 1.97, and 1.73 T·emu⁻¹·g for Pb04, Pb05, and Pb06, respectively. Critical exponent <i>β</i> values obtained from both <span>(- Delta S_{{text{M}}})</span> versus <i>M</i>² and <span>(frac{H}{M})</span> versus <i>M</i>² were close to the MFT prediction (<i>β</i> ≈ 0.5), confirming second-order ferromagnetic–paramagnetic transitions. Numerical solutions of the MFT equation reproduced <i>M</i>(<i>H</i>, <i>T</i>) and <span>(- Delta S_{{text{M}}} left( {H,T} right))</span> curves in close agreement with experimental results, particularly at higher magnetic fields, validating the model’s applicability to these compounds.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3581 - 3593"},"PeriodicalIF":2.5,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonvolatile Memory (NVM) for AI and Neuromorphic Computing","authors":"Supriyo Karmakar","doi":"10.1007/s11664-026-12682-8","DOIUrl":"10.1007/s11664-026-12682-8","url":null,"abstract":"<div><p>This paper introduces a nonvolatile memory (NVM) device that generates multiple states to store multiple values, and discusses its applications for the multiply-accumulate (MAC) operation. The operation of the device is explained using a device model, and the application of the device is implemented using a circuit model. The architecture for vector–matrix multiplication (VMM) to implement the MAC operation is also shown. The various controllable states of this device will aid in processing a large amount of data for current data science, artificial intelligence (AI), quantum computing (QC), and other large data computing and handling.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3784 - 3794"},"PeriodicalIF":2.5,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Efficiency of Undoped and Ag-Doped ZnO Nanostructure for Sustainable Dye-Sensitized Solar Cells","authors":"Hayder Ahmed Hasan,&nbsp;Nazar Abdulmahdi Jabir,&nbsp;Hadi Ahmed Hussin,&nbsp;Shaymaa Abed Hussein,&nbsp;Sami Salman Chiad,&nbsp;Nadir Fadhil Habubi,&nbsp;Muhannad Jadan","doi":"10.1007/s11664-026-12675-7","DOIUrl":"10.1007/s11664-026-12675-7","url":null,"abstract":"<div><p>In this work, undoped ZnO and ZnO:Ag nanostructures were produced using spray pyrolysis (SP). X-ray diffraction (XRD) indicated that the predominant peak was (101). The grain size of pure ZnO increased from 15.18 nm to 18.03 nm with doping, while strain decreased from 2.28 to 1.92. Atomic force microscopy (AFM) images provided detailed surface topography information, revealing a reduction in root-mean-square roughness values from 6.86 nm for pure ZnO to 5.13 nm and 3.36 nm for ZnO:1% Ag and ZnO:3% Ag, respectively. The AFM images also identified particle sizes ranging from 80.96 nm for ZnO to 58.23 nm for ZnO:3% Ag. Scanning electron microscopy (SEM) images of Ag-doped ZnO films showed enhanced grain growth, indicating an improved crystalline structure. In all cases, the samples exhibited optical transmittance exceeding 90%, and the energy bandgap narrowed from 3.35 eV to 3.25 eV upon Ag introduction, as evidenced by ultraviolet–visible (UV-Vis) spectra. Furthermore, the absorption coefficient and refractive index decreased as a consequence of Ag content. The variation in the Ag-doping ratios on ZnO nanostructures led to an enhancement in conversion efficiency from 0.787% to 1.004%, depending on the crystallite size. This indicates that both undoped and Ag-doped ZnO nanostructures exhibit high efficiency, making them suitable for use in sustainable dye-sensitized solar cells.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"2791 - 2802"},"PeriodicalIF":2.5,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147342285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on Factors Responsible for Performance of n-ZnO/MAPbI3/p-NiO Perovskite Solar Cell","authors":"P. A. Alvi","doi":"10.1007/s11664-026-12670-y","DOIUrl":"10.1007/s11664-026-12670-y","url":null,"abstract":"<div><p>This study investigates the band alignment, charge carrier dynamics, and performance optimization of an <i>n</i>-ZnO/MAPbI₃/<i>p</i>-NiO perovskite solar cell. The band alignment diagram reveals efficient charge separation and transport, with <i>n</i>-ZnO (electron transport layer) extracting electrons and <i>p</i>-NiO (hole transport layer) extracting holes, which minimizes recombination loss. Simulation study of carrier generation and recombination confirms higher photocarrier generation (~10²¹) and lower recombination (~10¹⁵) in the MAPbI₃ perovskite absorbing layer, leading to efficient photocurrent extraction (~18 mA/cm²). The device achieves a short-circuit current density (<i>J</i>_sc) of ~18.63 mA/cm², open-circuit voltage (<i>V</i>_oc) of ~1.1 V, fill factor (FF) of 83%, and power conversion efficiency (PCE) of ~17.23%. The key factors responsible for the performance of the device are also investigated. Optimization of the active-layer thickness improves efficiency up to ~23.6% at 1.2 µm due to enhanced light absorption. Series resistance and temperature variations significantly affect FF and PCE, with higher resistance and elevated temperatures reducing efficiency. Wavelength-dependent studies show that shorter wavelengths yield stronger absorption, higher photocurrent, and improved performance, while longer wavelengths reduce efficiency. The results demonstrate that careful control of band alignment, active-layer thickness, resistance, and stability is crucial for achieving high-performance and low-cost perovskite solar cells capable of harnessing solar energy with enhanced efficiency while supporting environmental sustainability.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 3","pages":"2776 - 2790"},"PeriodicalIF":2.5,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147342287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: An International Round-Robin Study on Thermoelectric Module Testing and Development of Standard Power Generation Modules","authors":"Hsin Wang,&nbsp;Shengqiang Bai,&nbsp;Hugo Bouteiller,&nbsp;Alexandre Cuenat,&nbsp;Pablo Díaz-Chao,&nbsp;Nolan Goth,&nbsp;Jingcheng Liao,&nbsp;Jan Konig,&nbsp;Jay Maddux,&nbsp;Min-Wook Oh,&nbsp;Trevor Parker,&nbsp;James R. Salvador,&nbsp;Qingfeng Song,&nbsp;Patrick Taylor,&nbsp;Dimitri Vasilevskiy,&nbsp;Paul Verdier","doi":"10.1007/s11664-026-12687-3","DOIUrl":"10.1007/s11664-026-12687-3","url":null,"abstract":"","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3418 - 3418"},"PeriodicalIF":2.5,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}