Journal of Electronic Materials最新文献

{"title":"Enhanced Thermoelectric Performance of Cu2−xRExSe (x = 0–0.2) by Doping with Rare Earth Elements Tm, Er, and Lu","authors":"Yunkai Li, Lige Wang, Ruizhi Yang, Li Liang, Qingdong Luan, Jing Liu","doi":"10.1007/s11664-024-11349-6","DOIUrl":"https://doi.org/10.1007/s11664-024-11349-6","url":null,"abstract":"<p>Copper selenide (Cu₂Se) has attracted extensive research interest in the field of thermoelectricity due to its large abundance of constituent elements, environmental friendliness, and excellent thermoelectric properties. In this study, a facile and low-cost hydrothermal synthesis method combined with vacuum sintering was used for Cu₂Se-based sample preparation, and the possibility of improving the thermoelectric properties of Cu₂Se by doping with rare earth elements (Tm, Er, Lu) was explored using experimental tests and density functional theory calculations. The electronic structure calculations show that the electrical conductivity is increased due to the increased electron density after rare earth element doping. At the same time, the sharp increase in the density of states at the Fermi level after rare earth element doping enhances the Seebeck coefficient of the Cu₂Se matrix. The experimental results show that the thermoelectric properties of all the samples doped with rare earth elements (Tm, Er, Lu) were improved compared to the Cu₂Se matrix. The doping of rare earth elements led to an increase in point defects and the formation of pores in the samples, which play an important role in reducing the thermal conductivity. Among them, the Tm-doped Cu_1.995Tm_0.005Se sample reached a maximum ZT value of 0.80 at 773 K, which is a nearly 43% increase compared to the Cu₂Se matrix (ZT_max = 0.56).</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"58 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic and Antibacterial Activities of Alternanthera dentata Mediated Bio-nanocomposite of CuO Nanoparticles and DFT Study on the Selective Capping Behavior of Phytocompounds","authors":"Jayanta Deka, Chinmoy Kalita, Rupak K. Sarma, Samir Thakur, Rajesh Dev Sarkar, Mrinal K. Debanath, Nirab C. Adhikary, Eeshankur Saikia","doi":"10.1007/s11664-024-11344-x","DOIUrl":"https://doi.org/10.1007/s11664-024-11344-x","url":null,"abstract":"<p>In this work, we have applied a green chemistry approach for the synthesis of CuO nanoparticles (NPs) using Copper (II) nitrate trihydrate and the leaf extract of <i>Alternanthera dentata</i> plant (ADLE). The UV-vis, FTIR and Gas Chromatography-Mass Spectrometry (GC-MS) analysis of ADLE revealed the presence of a wide variety of bioactive phytochemical constituents in ADLE. In addition to that, we have used the Density Functional Theory (DFT) in order to investigate the stability of CuO bio-nanocomposites. The study of orbital energies of phytochemicals with their highest norm percentage shows that the charge transfers between <i>Distearyl Thiodipropionate</i> to CuO are more dominant as compared to the other phytochemical constituents. Furthermore, it has the highest molecular weight compared to the other phytocompounds. Therefore, these reveal that <i>Distearyl Thiodipropionate</i> is responsible for the stability of CuO nanostructures. The average crystalline size of the CuO NPs is found to be 7.38 nm with 0.27 nm inter-planer spacing with the (110) plane. The fabricated nanoparticles are then employed for the degradation of Congo Red (CR), Malachite Green (MG) and their mixed dye (MD) in the presence of UV light. We have achieved more than 96% degradation with 30 mgL^-1 of CuO NPs in the case of all dye solutions, which is the best result to date. Furthermore, the nanoparticles showed prominent activity against pathogenic bacteria like <i>Klebsiella pneumoniae</i> (ATCC1705) and <i>Staphylococcus aureus</i> (ATCC6538p) which signifies that the antibacterial activity of the CuO NPs is directly proportional to their concentration.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"163 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function","authors":"Rajan Kumar Pandey","doi":"10.1007/s11664-024-11347-8","DOIUrl":"https://doi.org/10.1007/s11664-024-11347-8","url":null,"abstract":"<p>Silicon (Si) and its oxide (SiO₂) have been the workhorse of the scaling-driven semiconductor industry. Almost a decade and a half ago, the high-<i>κ</i> metal gate (HKMG) was introduced by Intel for 45-nm technology and by IBM for 32-nm-based complementary metal–oxide–semiconductor (CMOS) technology, wherein hafnium oxide (HfO₂) and titanium nitride (TiN) were used in the gate stack as the preferred high-<i>κ</i> dielectric and work function metal, respectively. The performance of these scaled CMOS devices at sub-5 nm and beyond relies on accurate control of materials in the bulk and at the interfaces in terms of chemical composition, nature of atomic species, and defects. The defects in gate oxides and at their interfaces influence the threshold voltage shift and mobility degradation. Employing first-principles modeling based on density functional theory, we discuss ways to engineer the effective work function (EWF). We also discuss the variability in the EWF and the reliability issues due to the presence of oxygen point defects in the HKMG stack. We point out the possibilities for EWF engineering through material innovation, point defects, and interface dipole engineering, in order to achieve the required threshold voltage (<i>V</i>_T) of aggressively scaled CMOS devices at sub-5-nm technologies.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation, Characterization, Photoluminescence and Thermoluminescence Studies of Li2−3xLnxGeTeO6 (Ln = Eu3+, Tb3+; x = 0.0, 0.02, 0.05, 0.075 and 0.1)","authors":"Trinadh Amarapuri, Srikanth Koneti, Vithal Muga, Srinivas Mudavat","doi":"10.1007/s11664-024-11334-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11334-z","url":null,"abstract":"<p>Li_2-3<i>x</i>Ln_<i>x</i>GeTeO₆ phosphors with doping of Ln³⁺ (Ln = Eu³⁺,Tb³⁺:0.0 &lt; <i>x</i> &lt; 0.1) were successfully prepared. Parent Li₂GeTeO₆ was obtained by the solid-state method, while Ln-doped compositions were synthesized by the facile ion-exchange method. The prepared phosphors were characterized by powder x-ray diffraction (P-XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy techniques. All of the samples were crystallized in rhombohedral structure with space group R3<b>/</b>(146). The photoluminescence (PL) and thermoluminescence (TL) characteristics of Li_2-3<i>x</i>Ln_<i>x</i>³⁺GeTeO₆ were studied. The excitation spectra of Eu³⁺<b>/</b>Tb³⁺-doped samples were obtained by monitoring the 611<b>/</b>544 nm emission line. The emission spectra of Eu³⁺<b>/</b>Tb³⁺-doped samples were recorded by excitation at 394<b>/</b>372 nm. The Li_2-3<i>x</i>Eu_<i>x</i>GeTeO₆ phosphor exhibited red emission with a maximum intense band at 611 nm. The Li_2-3<i>x</i>Tb_<i>x</i>GeTeO₆ phosphor gave a strong emission band at 544 nm in the green range. The variation in emission with dopant concentration was studied. It was found that the concentration quenching was predominant above 0.05 mol.% in both Eu³⁺- and Tb³⁺-doped phosphors, which was demonstrated based on Blasse’s equation and Dexter’s theory. The chromaticity coordinates of Eu³⁺- and Tb³⁺-incorporated phosphors were located at red and green regions, respectively, as per NTSC standards. The colour purity values for 0.05 mol.% of Eu³⁺ (Tb³⁺)-doped Li₂GeTeO₆were 54% and 43%, respectively. The correlated colour temperature (CCT) values of Li_2-3<i>x</i>Eu_<i>x</i>GeTeO₆and Li_2-3<i>x</i>Tb_<i>x</i>GeTeO₆ were 2763 K and 4562 K, respectively, indicating their suitability for use in warm and cool white-light devices. The parameters of trap-depth/activation-energy, order of kinematics and frequency-factor of the synthesized samples were calculated using the Chen glow curve peak-shape method. The investigation shows Eu³⁺- and Tb³⁺-doped Li₂GeTeO₆ compositions can be utilized as white-LEDs.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"52 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of Mixed Percentage on the Microstructure and Mechanical Properties of Sn-52In/Sn-3.0Ag-0.5Cu Hybrid Solder Joints","authors":"W. T. Zhao, J. Ren, M. L. Huang","doi":"10.1007/s11664-024-11350-z","DOIUrl":"https://doi.org/10.1007/s11664-024-11350-z","url":null,"abstract":"<p>The microstructural evolution and mechanical properties of Sn-52In/Sn-3.0Ag-0.5Cu hybrid solder joints soldered at different reflow temperatures (150°C, 175°C, 200°C) were investigated. The mixed percentage of as-soldered hybrid solder joints increased with increasing reflow temperature. With increasing mixed percentage, finely dispersed Ag₂In and Ag₃Sn particles led to significant refinement of the size of β-Sn grains, and consequently, the combined effect of fine grain strengthening and second-phase dispersion strengthening improved the shear strength, ductility, and fracture energy of the hybrid solder joints. The fracture site of the hybrid solder joints shifted from the Cu₆(Sn, In)₅ intermetallic compound (IMC)/solder interface to the mixed zone of the solder, and the fine β-Sn grains attenuated crack propagation, enabling more fracture energy to be absorbed before fracture. The hybrid solder joint with 100% mixed percentage exhibited the highest shear strength of 87.8 MPa, highest displacement of 251 μm, and highest fracture energy of 1.4 J.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"79 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain Engineering on the Electronic Structure and Optical Properties of Monolayer WSi2X4 (X = N, P, As)","authors":"Jianfei Wang, Zhiqiang Li, Liang Ma, Yipeng Zhao","doi":"10.1007/s11664-024-11336-x","DOIUrl":"https://doi.org/10.1007/s11664-024-11336-x","url":null,"abstract":"<p>Two-dimensional WSi₂X₄ (X = N, P, As) has stimulated extensive studies due to its structural diversity and intriguing properties. Here, a systematic study on the strain engineering of electronic and optical properties in monolayer WSi₂X₄ is presented. Our results demonstrate that the monolayer WSi₂X₄ can withstand biaxial tensile strains of 13.1%, 16.3%, and 12.2% for X = N, P, and As, respectively, while the corresponding critical stresses are 27.90 GPa, 14.58 GPa,and 13.56 GPa, respectively. Furthermore, the bandgap of monolayer WSi₂X₄ can undergo a direct-to-indirect transition and even achieve a semiconductor-to-metal transition under appropriate biaxial strains. In addition, the light absorption of monolayer WSi₂X₄ in the visible region can be effectively improved by tensile strain, and the red (blue) shift of the absorption peak can be observed by tensile (compression) strain. The results show that monolayer WSi₂X₄ exhibits outstanding mechanical strength and physical properties, which is promising for future optoelectronic devices.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"78 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Feasibility of Gallium Nitride for Astronomical Charge-Coupled Devices","authors":"Anmol Aggarwal, George M. Seabroke, Nitin K. Puri","doi":"10.1007/s11664-024-11335-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11335-y","url":null,"abstract":"<p>All astronomical missions use charge-coupled devices (CCDs) as vital organs. Usually, silicon (Si) is preferred to build them, which does not perform well without enhancements such as anti-reflection (AR) coatings. Such devices exhibit poor performance in the large (&gt; 800 nm) and small (&lt; 500 nm) wavelength ranges, even with AR coatings. We present studies that signify gallium nitride (GaN) as a potential replacement for Si in astronomical CCDs that operate in a wide wavelength range. For this purpose, SILVACO TCAD software has been used for simulating and comparing the electronic and optical properties of a GaN CCD pixel with a Gaia astrometric field (AF) CCD pixel. Our observations demonstrate that the electronic and optical performance of the GaN-based CCD pixel is significantly better than the Si-based AF CCD pixel. These findings can prove to be the bedrock of future astronomical exploration and broadband astronomical CCDs, as the simulated GaN CCD pixel exhibits a high quantum efficiency even without any reinforcements.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"48 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tri-Band/Ultra-Broadband Switchable Terahertz Metamaterial Absorber Based on Graphene Patches","authors":"Yulong Liu, Zhongyin Xiao, Xianshun Cai, Qi Zheng","doi":"10.1007/s11664-024-11348-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11348-7","url":null,"abstract":"<p>A tri-band/ultra-broadband switchable terahertz absorber based on graphene patches is proposed in this paper. By changing the bias voltage of the graphene patches, the operating modes of the absorber can be switched between tri-band and ultra-broadband absorption. The simulation results show that the absorption bandwidth can reach 6.34 THz when the mode is ultra-broadband absorption, and the relative bandwidth is 159.3%. The absorption bandwidths can reach 0.73 THz, 0.74 THz, and 0.59 THz, respectively, when the mode is tri-band absorption, and perfect absorption appears at 1.12 THz, 4.12 THz, and 6.86 THz. The absorptance within the absorption bands can exceed 90% in both modes. In addition, the absorber is characterized by polarization insensitivity, and it can maintain high absorptance of greater than 90% with an incidence angle below 40°. The physical mechanisms of the proposed absorber are analyzed by electric field distribution and equivalent circuit theory. We believe the absorber is a potential candidate for terahertz 6G communication and electromagnetic stealth.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"58 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Comparative Analysis of Ferroelectric Nanowire with Dielectric HfO2 and Al2O3 for Low-Power Applications","authors":"Mohit Kumar, Tarun Chaudhary, Balwinder Raj","doi":"10.1007/s11664-024-11332-1","DOIUrl":"https://doi.org/10.1007/s11664-024-11332-1","url":null,"abstract":"<p>This paper reports the design of ferroelectric nanowires using HfO₂ and Al₂O₃. Ferroelectric nanowire transistors have drawn considerable attention recently because of their potential for use in low-power devices and non-volatile memory systems. In this work, the drain current, acceptor concentrations, and electric field are analyzed. The results obtained for the proposed device structure highlight the relevance of Al₂O₃- and HfO₂-based nanowires as potential materials for the development of cutting-edge nanotechnology and materials science advancements. The proposed device structure has <i>I</i>_ON = 3.8 × 10⁻⁵ using HfO₂ and <i>I</i>_ON = 3.48 × 10⁻⁴ using Al₂O₃. The significant improvements in the results make ferroelectric nanowire interesting for the scientific and research community working in this area.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Evolution of Micro-Voids in Sn37Pb Solder Joints Under Electromechanical Coupling Loading","authors":"Shaobin Wang, Peng Liu, Sen Cong, Weiqi Guo, Weiwei Zhang","doi":"10.1007/s11664-024-11313-4","DOIUrl":"https://doi.org/10.1007/s11664-024-11313-4","url":null,"abstract":"<p>In this study, a Sn37Pb solder joint was subjected to mechanical loading (constant 5 N force applied in the vertical direction) for a duration of 400 h in order to investigate the evolution of micro-voids. Under electromechanical loading, micro-voids exhibited growth and subsequent shrinkage. Solder joint resistance initially increased and then decreased. The decrease in void volume and the reduction in solder joint resistance are both attributed to the creep deformation occurring in the vertical direction of the solder joint. Notably, no significant element migration was observed within the solder joints after 400 h of loading. The significant stress gradients within the solder joints result in increased back stress, thus balancing the electromigration stress and completely suppressing element migration.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}