Journal of Electronic Materials最新文献

{"title":"Photoluminescence and EPR Study of the Local Environment of Gd3+ in SrAl4O7 UVB Phosphors","authors":"Vijay Singh,&nbsp;MOHD Musaib Haidari,&nbsp;Ji Bong Joo,&nbsp;S. Watanabe,&nbsp;T. K. Gundu Rao","doi":"10.1007/s11664-026-12703-6","DOIUrl":"10.1007/s11664-026-12703-6","url":null,"abstract":"<div><p>Phosphor materials play a crucial role in the advancement of optical technologies. In this study, SrAl₄O₇:xGd³⁺ (<i>x</i> = 0.01–0.11 mol) phosphors are synthesized using the combustion method, and their structural, morphological, and optical properties are examined. X-ray diffraction analysis confirms that the phosphors crystallize in the monoclinic <i>C</i>2/<i>c</i> space group. Photoluminescence spectroscopy indicates well-defined intra-configurational 4f–4f transitions of Gd³⁺ ions, with prominent emission peaks at 308 nm and 314 nm, corresponding to the ⁶P_5/2 → ⁸S_7/2 and ⁶P_7/2 → ⁸S_7/2 transitions, respectively. The luminescence intensity is optimized at a Gd³⁺ concentration of 0.09 mol. The electron paramagnetic resonance spectra of SrAl₄O₇:Gd³⁺ phosphors exhibit a prominent resonance line at an effective <i>g</i>-factor of approximately 1.97, accompanied by weaker signals in the low-field region. Two distinct Gd³⁺ sites with differing local environments contribute to the observed spectrum. These environmental variations arise from charge-compensating Sr²⁺ vacancies or interstitial O²⁻ ions and their proximity to Gd³⁺ ions. The findings highlight the potential of Gd³⁺-doped SrAl₄O₇ for advanced UV photonic applications, particularly in dermatological phototherapy, where precise control over emission properties is crucial.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3739 - 3747"},"PeriodicalIF":2.5,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sustainable Design of CoMn2O4/N-Doped Biocarbon Hybrid Electrode from Moringa Seed Husk for Enhanced Dye-Sensitized Solar Cell Efficiency","authors":"M. Muthupriya,&nbsp;N. Shobanadevi,&nbsp;Mahaboob Beevi Mohamed Yusuf,&nbsp;R. Ramya","doi":"10.1007/s11664-026-12704-5","DOIUrl":"10.1007/s11664-026-12704-5","url":null,"abstract":"<div><p>The high cost and scarcity of platinum (Pt), the conventional counter electrode material in dye-sensitized solar cells (DSSCs), have driven the search for sustainable, low-cost alternatives without compromising efficiency and stability. This study presents the development of an innovative hybrid carbon electrode consisting of spinel CoMn₂O₄ nanoparticles affixed to nitrogen-doped biocarbon (CMO/N-BC) obtained from <i>Moringa oleifera seed husk</i>. The inherent nitrogen concentration in the biomass facilitated in situ doping during pyrolysis, resulting in a porous, defect-laden carbon framework that promotes improved charge transfer. X-ray diffraction (XRD) study validated the spinel phase of CoMn₂O₄ and the amorphous characteristics of N-BC. Fourier transform infrared (FTIR) and Raman spectroscopy revealed distinctive metal–oxygen oscillations and graphitic characteristics, respectively. Field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) analysis demonstrated uniform distribution and strong interfacial interaction between CoMn₂O₄ and N-BC. Textural analysis showed a significant increase in specific surface area (CMO/N-BC: 146.2 m² g⁻¹) and mesoporosity, facilitating electrolyte diffusion. The electrochemical analysis showed that CMO/N-BC demonstrated remarkable electrocatalytic activity, with low charge transfer resistance (12.7 Ω cm²), high peak current density in cyclic voltammetry, and a small Tafel slope, indicating that the redox kinetics were improved. The CMO/N-BC-based DSSC possessed outstanding power conversion efficiency (PCE) of 7.45%, which was much higher than the performance of pure CMO (4.91 %) and close to that of Pt (8.89%). The device was also very stable and consistent over an extended period of use. This study shows an effective and sustainable means for fabricating high-performance DSSCs from Pt-free counter electrodes derived from biowaste materials.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3474 - 3488"},"PeriodicalIF":2.5,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic-Scale Material Removal Mechanisms in 3C-SiC Nano-Polishing: Molecular Dynamics Insights","authors":"Duo Li,&nbsp;Ruihan Li,&nbsp;Chao Long,&nbsp;Shuhao Kang,&nbsp;Huan Liu","doi":"10.1007/s11664-026-12709-0","DOIUrl":"10.1007/s11664-026-12709-0","url":null,"abstract":"<div><p>Achieving defect-free surfaces in cubic silicon carbide (3C-SiC) is critical for high-power electronics; however, the atomic-scale role of polishing depth remains unclear. This study used molecular dynamics to systematically investigate how polishing depth affects the 3C-SiC nano-polishing process. The study analyzed the impact of varying polishing depths on surface morphology, temperature, atomic structure, and stress distribution in nano-polishing. The findings show that with an increase in polishing depth from 1 nm to 3 nm, polishing performance improves but debris accumulation and surface temperature also increase, negatively impacting surface quality and atomic structure stability. Moderate depths (1–2 nm) optimize material removal rates without compromising surface quality. Deeper polishing leads to 3C-SiC crystal transformation into amorphous structures, increased coordination numbers (CN), and greater lattice damage, while shallower depths reduce stress and structural damage, preserving material integrity. This study provides the first comprehensive analysis of depth-induced phase transitions and stress evolution, guiding high-precision 3C-SiC manufacturing.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3835 - 3849"},"PeriodicalIF":2.5,"publicationDate":"2026-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rate Performance Prediction of P2-Type Cathode Materials Using a Random Forest Model","authors":"Zijin Cui,&nbsp;Jingyuan Guo,&nbsp;Cheng Wei,&nbsp;Haokun Li,&nbsp;Linzhuang Xing,&nbsp;Hongyu Yang,&nbsp;Yihang Li,&nbsp;Zhimin Li","doi":"10.1007/s11664-026-12710-7","DOIUrl":"10.1007/s11664-026-12710-7","url":null,"abstract":"<div><p>The rapid advancement of sodium-ion battery (SIB) technology necessitates efficient methods for evaluating and identifying high-performance cathode materials to accelerate their commercialization. In this context, elucidating the key factors governing rate capability and establishing accurate predictive models are of paramount importance for their rational design. This study addresses this need by integrating machine learning with publicly available data to predict the rate performance of P2-type cathode materials. We employ the maximal information coefficient (MIC) to identify the critical features and construct a high-accuracy prediction model using the random forest (RF) algorithm. To resolve the inherent “black-box” nature of such models, we enhance interpretability through SHapley Additive exPlanations (SHAP) and accumulated local effects (ALE). Finally, 15 representative samples are synthesized to evaluate the accuracy of the model, achieving a low test error of 4.7%. The findings provide theoretical insights and practical guidance for the rapid design, development, and evaluation of high-performance P2-type materials for SIBs.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3461 - 3473"},"PeriodicalIF":2.5,"publicationDate":"2026-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic Correlations, Magnetic Ordering and Thermoelectric Properties of Rare-Earth Nickelates Ce4Ni3O8 and Pr4Ni3O8: A Theoretical Study","authors":"Surendra Singh Sengar,&nbsp;Dinesh C. Gupta","doi":"10.1007/s11664-026-12700-9","DOIUrl":"10.1007/s11664-026-12700-9","url":null,"abstract":"<div><p>We present a first-principles study of the structural, electronic, magnetic, thermodynamic and thermoelectric properties of the layered rare-earth nickelates Ce₄Ni₃O₈ and Pr₄Ni₃O₈ using the generalized gradient approximation (GGA)-Perdew–Burke–Ernzerhof (PBE) functional, modified Becke-Johnson (mBJ) functional, density functional theory with Hubbard U correction (DFT+U) and DFT with relativistic spin–orbit coupling (DFT+SOC) methods. The inclusion of on-site Coulomb interaction is essential to capture strong Ni-3d and Ce/Pr-4f correlations, leading to stabilization of a ferromagnetic metallic ground state, verified through total energy comparisons with antiferromagnetic configurations. The low-energy electronic structure is dominated by Ni-3d–O-2p hybridized states, while the rare-earth 4f states remain largely localized and are mainly affected by spin–orbit coupling. Thermodynamic properties are evaluated within the quasi-harmonic Debye model, indicating good lattice stability. Thermoelectric transport calculations using BoltzTraP2 show that ZT increases from 0.01 at 300 K to 0.16 at 900 K, consistent with correlated metallic behaviour. These results highlight the role of electronic correlations and magnetism in governing transport in Ce₄Ni₃O₈ and Pr₄Ni₃O₈.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3665 - 3689"},"PeriodicalIF":2.5,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Differential Transformation Method for Thermomechanical Analysis of Functionally Graded Thermoelectric Generators Considering Interface Effects","authors":"Zouqing Tan,&nbsp;Han Sun,&nbsp;Dexing Ruan,&nbsp;Zhizhi Wang,&nbsp;Yanmei Yue","doi":"10.1007/s11664-026-12697-1","DOIUrl":"10.1007/s11664-026-12697-1","url":null,"abstract":"<div><p>This study investigates the interface effects in thermoelectric generators composed of functionally graded materials (FGMs) using the differential transformation method (DTM). A steady-state thermal model is developed to analyze the impacts of FGM parameters and interfacial layer characteristics on the performance of thermoelectric generators. Varying thermoelectric properties including thermal conductivity, Seebeck coefficient, and electrical resistivity along the axial direction of thermoelectric legs are considered. By incorporating external and internal interface layers, this model examines their impact on temperature distribution, heat flux distribution, thermal stress, and energy conversion efficiency. The results demonstrate that DTM provides an accurate and efficient solution for nonlinear thermoelectric governing equations, exhibiting excellent agreement with finite element method (FEM) simulations. The study reveals that optimizing the material property gradients and interface layer configurations can simultaneously enhance energy conversion efficiency and reduce thermal stress. The findings show that the exponential profile yields a higher maximum thermomechanical performance index (<i>ζ</i> = 2.87 1/GPa at <i>J</i> = −83 A/cm²) than the linear profile (<i>ζ</i> = 2.65 1/GPa at <i>J</i> =  −88 A/cm²). This work advances theoretical understanding of FGMs and interface layer design in thermoelectric systems, providing valuable insights for high performance thermoelectric device.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3429 - 3448"},"PeriodicalIF":2.5,"publicationDate":"2026-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development and Characterization of Poly(Vinylidene Fluoride)/Sn-Doped CaCu3Ti4O12 Thin Film with Enhanced Dielectric and Mechanical Properties","authors":"Anshuman Srivastava,&nbsp;Nidhi Asthana,&nbsp;Pragya Gupta,&nbsp;Tanweer Alam,&nbsp;Pralay Maiti,&nbsp;Rajeev Kumar,&nbsp;Laxman Singh","doi":"10.1007/s11664-026-12684-6","DOIUrl":"10.1007/s11664-026-12684-6","url":null,"abstract":"<div><p>This work investigated the possibility of obtaining a relatively high-dielectric-constant polymer-ceramic composite by incorporating a giant-dielectric-constant material, Sn-doped CaCu₃Ti₄O₁₂ (SnCCTO), in a poly(vinylidene fluoride) (PVDF) polymer matrix by a melt mixing and hot pressing process. SnCCTO was synthesized using the solid-state ceramic method, and PVDF/SnCCTO composites were fabricated via the melt extrusion technique. The structure, morphology, mechanical properties, and dielectric properties of the composites were characterized using x-ray diffraction, thermal analysis, scanning electron microscopy, Instron 3369 tensile testing, and impedance analysis. Interestingly, the composites exhibited a higher Young’s modulus than the pure PVDF. Notably, the dielectric permittivity of the PVDF matrix increased with a higher volume fraction of SnCCTO. The purpose was to analyze the dielectric relaxation behavior. In addition, the dielectric loss exhibited a slight increase with rising temperature but decreased as the frequency increased. Two distinct dielectric relaxations were observed: one in the low-frequency range, attributed to the Maxwell–Wagner–Sillar phenomenon, and another in the intermediate-frequency range linked to the glass–rubber transition (<i>α</i>). The activation energy for both dielectric relaxations was determined as well.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3910 - 3922"},"PeriodicalIF":2.5,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147363237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Trifluorotoluene Changes the Morphology of PbI2 to Induce the Crystallization of Perovskites","authors":"Zicheng Liu,&nbsp;Tao Feng,&nbsp;Mingxing Gao,&nbsp;Pengfei Wang,&nbsp;Minhuan Wang,&nbsp;Jiming Bian","doi":"10.1007/s11664-026-12698-0","DOIUrl":"10.1007/s11664-026-12698-0","url":null,"abstract":"<div><p>Perovskite solar cells (PSCs) have achieved remarkable progress in power conversion efficiency (PCE), yet precise control over perovskite film crystallinity and morphology remains challenging. Conventional fabrication methods often yield films with small grains, excessive grain boundaries, and defect-related performance losses. Here, we demonstrate that dynamic spin coating of trifluorotoluene (TFT) during the two-step deposition process induces vertical stacking of PbI₂ crystals, generating nanochannels that facilitate organic salt infiltration. This mechanism promotes the growth of high-quality crystalline, low-defect-density perovskite films with uniform morphology and suppressed pinhole formation. The optimized films enable the production of PSCs (FTO/SnO₂/perovskite/Spiro-OMeTAD/Ag) with optimized PCE of 25.32%, accompanied by exceptional operational stability under continuous illumination. Crucially, this TFT-assisted strategy is compatible with diverse solution-based fabrication techniques, offering a universal pathway to enhance the reproducibility and performance of perovskite photovoltaics.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3657 - 3664"},"PeriodicalIF":2.5,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Coupled Degradation Behavior in a Monolithically Integrated GaN Power Chip Under Load Dump Stress","authors":"Huangtao Zeng,&nbsp;Chao Yang,&nbsp;Zhiyuan He,&nbsp;Yijun Shi,&nbsp;Liang He,&nbsp;Guoguang Lu,&nbsp;Yuan Chen,&nbsp;Xinghuan Chen,&nbsp;Xianzhong Zhou,&nbsp;Zhipeng Shen","doi":"10.1007/s11664-026-12696-2","DOIUrl":"10.1007/s11664-026-12696-2","url":null,"abstract":"<div><p>This study reports, for the first time, the coupled failure phenomenon in monolithically integrated gallium nitride (GaN) power chips under load dump stress. Experimental results show that when stress is applied to the drain terminal of the high-side device in a half-bridge integrated chip, the high-side device exhibits a positive threshold voltage shift and on-state current degradation, while the low-side device simultaneously demonstrates threshold voltage drift and current characteristic deterioration. The underlying mechanism originates from the floating substrate configuration: under high-side stress, electrons and holes accumulate in the substrate layer at the drain of the high-side device and the region of the low-side device, respectively, creating a high potential in the low-side substrate. This induces electron trapping in the buffer layer, ultimately leading to an increased threshold voltage and reduced conduction current in the low-side device. In contrast, when stress is applied to the low-side drain, the charges generated in the low-side substrate can be effectively dissipated through its source-grounded path, thereby significantly mitigating coupling interference to the high-side device. Notably, devices under <i>V</i>_GS = 1.6 V and <i>V</i>_GS = 6 V conditions face burnout risks under transient load dump stress. This occurs because a conductive path already exists between the drain and source, where the coexistence of transient high voltage and high current causes localized thermal accumulation, eventually resulting in catastrophic failure. The significance of this finding lies in providing important support for research on load dump failure in monolithically integrated GaN chips and directly contributing to the improvement of their application reliability.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3822 - 3834"},"PeriodicalIF":2.5,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spacer–Gate Synergy in Tri-Material FinFETs: Performance Analysis for RF/Analog Applications","authors":"R. Linie Sharon,&nbsp;A. Shirly Edward","doi":"10.1007/s11664-026-12689-1","DOIUrl":"10.1007/s11664-026-12689-1","url":null,"abstract":"<div><p>This work presents the design and comprehensive analysis of a triple-material gate silicon-on-insulator (SOI) fin field-effect transistor (FinFET) with low-κ spacer, aimed at surpassing the performance of conventional FinFET devices. By incorporating three distinct gate materials with engineered work functions, the proposed triple-material gate FinFET structure effectively suppresses short-channel effects (SCE). Further, spacer engineering is employed to optimize device characteristics, with various spacer types (low-κ, high-κ, and asymmetric configurations) evaluated for their impact on electrical, analog, and radio frequency (RF) performance metrics. Among all spacer combinations, the low-κ spacer (F1) exhibits the most favorable characteristics for RF and analog applications, providing the highest cutoff frequency of 352 GHz which is 3.23% higher than F2, 19.32% higher than F3, and 26.16% higher than F4, indicating its superior high-frequency performance compared to all other spacer configurations, significantly reduced drain-induced barrier lowering (DIBL = 38 mV/V), and low output conductance, making it a highly suitable choice for high-performance device design. The optimized triple-material gate FinFET, along with the spacer, demonstrates a high <i>I</i>_<i>ON</i><i>/I</i>_<i>OFF</i> ratio exceeding 10⁶, a near-ideal subthreshold swing (<i>SS</i>) of ~ 60 mV/dec, a threshold voltage (<i>V</i>_th) of ~ 0.34 V, and significantly reduced SCEs. These results of triple-material gate FinFETs, combined with spacer engineering, will surely be promising for next-generation low-power, high-performance analog/RF integrated circuits.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 4","pages":"3807 - 3821"},"PeriodicalIF":2.5,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}