果胶多糖薄膜中的纳米银粒子对电阻开关特性的影响

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Jia Zheng Yeoh, Muhammad Awais, Feng Zhao, Kuan Yew Cheong
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引用次数: 0

摘要

本研究探讨了Ag纳米粒子(AgNP)-包合果胶(果胶-AgNP)作为记忆薄膜的电阻开关特性,不同浓度的AgNP(0.0 wt.%、0.5 wt.% 和 1.0 wt.%)和果胶(5.0 mg/L、5.5 mg/L、6.0 mg/L、6.5 mg/L 和 7.0 mg/L),夹在玻璃基板上的金电极和铟锡氧化物(ITO)电极之间。对这些果胶-AgNP 薄膜的结构、化学和电学特性进行了评估。果胶浓度为 5.5 mg/mL 时,AgNP 的浓度为 0.5 wt.%,傅立叶变换红外光谱(FTIR)显示 C-O 键的存在率最高。这表明 AgNP 的加入以及通过糖苷键形成的果胶链更加线性和延伸。C-O 键的大量存在极大地促进了薄膜电阻的增加,因此在所有样品中产生了最高的导通/关断比(7.2 × 103)。此外,还提出了支配电阻开关行为的电子和热化学机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effects of Silver Nanoparticles in Pectin Polysaccharide Thin Film on Resistive Switching Characteristics

Effects of Silver Nanoparticles in Pectin Polysaccharide Thin Film on Resistive Switching Characteristics

This study investigates the resistive switching characteristics of Ag nanoparticle (AgNP)-incorporated pectin (pectin-AgNP) as a memristive thin film, with varying concentrations of AgNP (0.0 wt.%, 0.5 wt.%, and 1.0 wt.%) and pectin (5.0 mg/L, 5.5 mg/L, 6.0 mg/L, 6.5 mg/L, and 7.0 mg/L), sandwiched between Au and indium tin oxide (ITO) electrodes on glass substrate. The structural, chemical, and electrical properties of these pectin-AgNP thin films were evaluated. With AgNP concentration of 0.5 wt.% in a pectin concentration of 5.5 mg/mL, the Fourier transform infrared (FTIR) spectra indicated the highest presence of C–O bonds. This suggests the incorporation of AgNP and the formation of more linear and extended pectin chains established by glycosidic bonds. The abundance of C–O bonds contributed significantly to the increase in the resistance of the thin film, consequently yielding the highest ON/OFF ratio (7.2 × 103) observed among the samples. The electronic and thermochemical mechanisms governing the resistive switching behaviours were also proposed.

Graphical Abstract

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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