高频应用中gd - cr掺杂BiFeO3材料的结构、光谱、介电和微波吸收特性

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Beriham Basha, Salman Ahmad, Ghulam Mustafa, Shagufta Gulbadan, Norah Salem Alsaiari, Malik Tahir Mehmood, Shaista Nargis, Faseeh ur Raheem, M. S. Al-Buriahi, Muhammad Azhar Khan
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引用次数: 0

摘要

采用溶胶-凝胶自燃烧法制备了Bi1−xGdxFe1−xCrxO3纳米晶(x = 0.00, 0.04, 0.08, 0.12, 0.16)样品。x射线衍射分析(XRD)证实其为单相菱形体结构。晶粒尺寸在30 ~ 25 nm之间,具有纳米尺度特征。与x线密度相比,较低的体积密度表明孔隙的存在。用Cell软件计算了晶格常数,表明用较小的Gd3+离子取代Bi3+会导致晶格结构的改变。傅里叶变换红外(FTIR)光谱显示吸收带在400 ~ 600 cm−1之间,随着Gd浓度的增加出现偏移,表明掺杂对结构有影响。ν1和ν2波段的频率都有所下降,这是由于Gd掺入破坏了Fe3+ -O2−键和阳离子重排所致。在室温下1-3 GHz范围内进行的介电研究表明,随着频率的增加,介电常数的实部和虚部都有所下降,这与麦克斯韦-瓦格纳极化模型一致。在较高的频率下,由于晶粒的贡献和邻近位置的极化增强,交流电导率大幅增加。x = 0.16的样品在3 GHz时表现出0.21 GHz的低介电损耗。质量系数的降低与颗粒内孔隙形成造成的损失的增加有关。此外,当x = 0.16时,在0.98 GHz处测量到的反射损耗为- 66.57 dB。这些发现突出了这些材料在尖端应用方面的潜力,特别是在多层芯片电感器和高频微波系统中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural, Spectral, Dielectric, and Microwave Absorption Properties of Gd–Cr-Doped BiFeO3 Materials for High-Frequency Applications

Nanocrystalline Bi1−xGdxFe1−xCrxO3 (x = 0.00, 0.04, 0.08, 0.12, 0.16) samples were fabricated via sol–gel autocombustion. x-Ray diffraction analysis (XRD) confirmed a single-phase rhombohedral structure. Crystallite size ranged from 30 nm to 25 nm, emphasizing their nanoscale characteristics. The lower bulk density compared with the x-ray density indicated the presence of pores. Lattice constants were computed with Cell software, indicating that substituting Bi3+ with the smaller Gd3+ ions resulted in modifications to the lattice structure. Fourier-transform infrared (FTIR) spectra revealed absorption bands between 400 cm−1 and 600 cm−1, with shifts observed as the Gd concentration increased, signifying doping effects on the structure. A decrease in the frequencies of both ν1 and ν2 bands was observed, attributed to the disruption of the Fe3+–O2− bond and the rearrangement of cations due to Gd incorporation. Dielectric studies performed at room temperature within the 1–3 GHz range revealed a decrease in both real and imaginary parts of permittivity as frequency increased, consistent with the Maxwell–Wagner polarization model. At higher frequencies, the alternating-current (AC) conductivity increases substantially owing to the contribution of grains and enhanced polarization at neighboring sites. The sample with x = 0.16 exhibited low dielectric losses of 0.21 GHz at 3 GHz. The decrease in the quality factor is linked to a rise in loss caused by the formation of pores within the grains. Moreover, for x = 0.16, a reflection loss of −66.57 dB was measured at 0.98 GHz. These findings highlight the potential of these materials for cutting-edge uses, especially in multilayer chip inductors and high-frequency microwave systems.

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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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