Beriham Basha, Salman Ahmad, Ghulam Mustafa, Shagufta Gulbadan, Norah Salem Alsaiari, Malik Tahir Mehmood, Shaista Nargis, Faseeh ur Raheem, M. S. Al-Buriahi, Muhammad Azhar Khan
{"title":"高频应用中gd - cr掺杂BiFeO3材料的结构、光谱、介电和微波吸收特性","authors":"Beriham Basha, Salman Ahmad, Ghulam Mustafa, Shagufta Gulbadan, Norah Salem Alsaiari, Malik Tahir Mehmood, Shaista Nargis, Faseeh ur Raheem, M. S. Al-Buriahi, Muhammad Azhar Khan","doi":"10.1007/s11664-025-12239-1","DOIUrl":null,"url":null,"abstract":"<div><p>Nanocrystalline Bi<sub>1−<i>x</i></sub>Gd<sub><i>x</i></sub>Fe<sub>1−<i>x</i></sub>Cr<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0.00, 0.04, 0.08, 0.12, 0.16) samples were fabricated via sol–gel autocombustion. x-Ray diffraction analysis (XRD) confirmed a single-phase rhombohedral structure. Crystallite size ranged from 30 nm to 25 nm, emphasizing their nanoscale characteristics. The lower bulk density compared with the x-ray density indicated the presence of pores. Lattice constants were computed with Cell software, indicating that substituting Bi<sup>3+</sup> with the smaller Gd<sup>3+</sup> ions resulted in modifications to the lattice structure. Fourier-transform infrared (FTIR) spectra revealed absorption bands between 400 cm<sup>−1</sup> and 600 cm<sup>−1</sup>, with shifts observed as the Gd concentration increased, signifying doping effects on the structure. A decrease in the frequencies of both <i>ν</i><sub>1</sub> and <i>ν</i><sub>2</sub> bands was observed, attributed to the disruption of the Fe<sup>3+</sup>–O<sup>2−</sup> bond and the rearrangement of cations due to Gd incorporation. Dielectric studies performed at room temperature within the 1–3 GHz range revealed a decrease in both real and imaginary parts of permittivity as frequency increased, consistent with the Maxwell–Wagner polarization model. At higher frequencies, the alternating-current (AC) conductivity increases substantially owing to the contribution of grains and enhanced polarization at neighboring sites. The sample with <i>x</i> = 0.16 exhibited low dielectric losses of 0.21 GHz at 3 GHz. The decrease in the quality factor is linked to a rise in loss caused by the formation of pores within the grains. Moreover, for <i>x</i> = 0.16, a reflection loss of −66.57 dB was measured at 0.98 GHz. These findings highlight the potential of these materials for cutting-edge uses, especially in multilayer chip inductors and high-frequency microwave systems.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 11","pages":"9714 - 9727"},"PeriodicalIF":2.5000,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural, Spectral, Dielectric, and Microwave Absorption Properties of Gd–Cr-Doped BiFeO3 Materials for High-Frequency Applications\",\"authors\":\"Beriham Basha, Salman Ahmad, Ghulam Mustafa, Shagufta Gulbadan, Norah Salem Alsaiari, Malik Tahir Mehmood, Shaista Nargis, Faseeh ur Raheem, M. S. Al-Buriahi, Muhammad Azhar Khan\",\"doi\":\"10.1007/s11664-025-12239-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Nanocrystalline Bi<sub>1−<i>x</i></sub>Gd<sub><i>x</i></sub>Fe<sub>1−<i>x</i></sub>Cr<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0.00, 0.04, 0.08, 0.12, 0.16) samples were fabricated via sol–gel autocombustion. x-Ray diffraction analysis (XRD) confirmed a single-phase rhombohedral structure. Crystallite size ranged from 30 nm to 25 nm, emphasizing their nanoscale characteristics. The lower bulk density compared with the x-ray density indicated the presence of pores. Lattice constants were computed with Cell software, indicating that substituting Bi<sup>3+</sup> with the smaller Gd<sup>3+</sup> ions resulted in modifications to the lattice structure. Fourier-transform infrared (FTIR) spectra revealed absorption bands between 400 cm<sup>−1</sup> and 600 cm<sup>−1</sup>, with shifts observed as the Gd concentration increased, signifying doping effects on the structure. A decrease in the frequencies of both <i>ν</i><sub>1</sub> and <i>ν</i><sub>2</sub> bands was observed, attributed to the disruption of the Fe<sup>3+</sup>–O<sup>2−</sup> bond and the rearrangement of cations due to Gd incorporation. Dielectric studies performed at room temperature within the 1–3 GHz range revealed a decrease in both real and imaginary parts of permittivity as frequency increased, consistent with the Maxwell–Wagner polarization model. At higher frequencies, the alternating-current (AC) conductivity increases substantially owing to the contribution of grains and enhanced polarization at neighboring sites. The sample with <i>x</i> = 0.16 exhibited low dielectric losses of 0.21 GHz at 3 GHz. The decrease in the quality factor is linked to a rise in loss caused by the formation of pores within the grains. Moreover, for <i>x</i> = 0.16, a reflection loss of −66.57 dB was measured at 0.98 GHz. These findings highlight the potential of these materials for cutting-edge uses, especially in multilayer chip inductors and high-frequency microwave systems.</p></div>\",\"PeriodicalId\":626,\"journal\":{\"name\":\"Journal of Electronic Materials\",\"volume\":\"54 11\",\"pages\":\"9714 - 9727\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electronic Materials\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11664-025-12239-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-025-12239-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Structural, Spectral, Dielectric, and Microwave Absorption Properties of Gd–Cr-Doped BiFeO3 Materials for High-Frequency Applications
Nanocrystalline Bi1−xGdxFe1−xCrxO3 (x = 0.00, 0.04, 0.08, 0.12, 0.16) samples were fabricated via sol–gel autocombustion. x-Ray diffraction analysis (XRD) confirmed a single-phase rhombohedral structure. Crystallite size ranged from 30 nm to 25 nm, emphasizing their nanoscale characteristics. The lower bulk density compared with the x-ray density indicated the presence of pores. Lattice constants were computed with Cell software, indicating that substituting Bi3+ with the smaller Gd3+ ions resulted in modifications to the lattice structure. Fourier-transform infrared (FTIR) spectra revealed absorption bands between 400 cm−1 and 600 cm−1, with shifts observed as the Gd concentration increased, signifying doping effects on the structure. A decrease in the frequencies of both ν1 and ν2 bands was observed, attributed to the disruption of the Fe3+–O2− bond and the rearrangement of cations due to Gd incorporation. Dielectric studies performed at room temperature within the 1–3 GHz range revealed a decrease in both real and imaginary parts of permittivity as frequency increased, consistent with the Maxwell–Wagner polarization model. At higher frequencies, the alternating-current (AC) conductivity increases substantially owing to the contribution of grains and enhanced polarization at neighboring sites. The sample with x = 0.16 exhibited low dielectric losses of 0.21 GHz at 3 GHz. The decrease in the quality factor is linked to a rise in loss caused by the formation of pores within the grains. Moreover, for x = 0.16, a reflection loss of −66.57 dB was measured at 0.98 GHz. These findings highlight the potential of these materials for cutting-edge uses, especially in multilayer chip inductors and high-frequency microwave systems.
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.