Effect of Spin Speed on the Physical Characteristics of CuO Films Synthesized by Sol–Gel Spin Coating for H2S Gas Sensing

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-09-12 DOI:10.1007/s11664-024-11411-3

Jyoti, Rajesh Kumar

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Abstract

In this paper, we study the effects of spinning speed on the electrical, optical, structural, morphological, and gas sensing properties of thin films deposited on glass substrates by sol–gel spin coating, using copper acetate dihydrate as the precursor. The deposition of the films was carried out at varying spinning speeds from 1500 rpm to 2500 rpm to achieve different thicknesses ranging from 157 nm to 470 nm, respectively. The results revealed that the resistivity of the films decreased from 75.5 Ω·m to 42.5 Ω·m with the decrease in spinning speed. X-ray diffraction (XRD) studies demonstrated that the crystallite size varied in the range of 18.14–27.48 nm. The band gap of the samples was found to vary from 2 eV to 1.69 eV, revealing that these samples were suitable for gas sensing applications. Field-emission scanning microscopy (FESEM) studies showed that the prepared samples were porous in nature and were suitable for H₂S gas detection. The films were examined at different operating temperatures with different concentrations of H₂S gas. The results showed that the response toward hydrogen sulfide gas varied with varying thickness of the samples. The CuO thin films showed the highest response toward hydrogen sulfide gas at a temperature of 25°C.

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旋转速度对溶胶-凝胶旋转镀膜法合成的用于 H2S 气体传感的氧化铜薄膜物理特性的影响

本文研究了以二水醋酸铜为前驱体，通过溶胶-凝胶旋涂法在玻璃基底上沉积的薄膜的电学、光学、结构、形貌和气体传感特性受旋涂速度的影响。薄膜的沉积是在 1500 rpm 至 2500 rpm 的不同旋转速度下进行的，厚度分别为 157 nm 至 470 nm。结果表明，随着旋转速度的降低，薄膜的电阻率从 75.5 Ω-m 降至 42.5 Ω-m。X 射线衍射 (XRD) 研究表明，结晶尺寸的变化范围为 18.14-27.48 nm。样品的带隙在 2 eV 至 1.69 eV 之间变化，表明这些样品适合用于气体传感。场发射扫描显微镜（FESEM）研究表明，制备的样品具有多孔性，适用于 H2S 气体检测。在不同的工作温度和不同浓度的 H2S 气体条件下对薄膜进行了检测。结果表明，对硫化氢气体的反应随样品厚度的变化而变化。在温度为 25°C 时，CuO 薄膜对硫化氢气体的反应最高。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.

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