Journal of Electronic Materials最新文献

{"title":"Investigation of Dielectric and Piezoelectric Properties of Polyvinylidene Fluoride Films Reinforced with Anatase Phase Titanium Dioxide for Pressure Sensing","authors":"Krishna Tewatia,&nbsp;Anuradha Sharma,&nbsp;Sohan Lal,&nbsp;Sridharbabu Yarramaneni,&nbsp;Tanuj Kumar,&nbsp;Arun Kumar","doi":"10.1007/s11664-024-11499-7","DOIUrl":"10.1007/s11664-024-11499-7","url":null,"abstract":"<div><p>In the present study, anatase phase titanium dioxide (A-TiO₂)-reinforced polyvinylidene fluoride (PVDF) nanocomposite films are synthesized by the solvent casting method. The electroactive phase, dielectric, and piezoelectric properties are studied for A-TiO₂ nanoparticles at 0.8 wt.%, 1.6 wt.%, 2.4 wt.%, 3.2 wt.%, and 4.0 wt.% content in the PVDF matrix. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy are used to assess the structural properties and the enhancement in the electroactive β phase, respectively. The β phase is found to improve up to 77%. Atomic force microscopy (AFM) shows that the roughness of the films increases with an increase in the amount of reinforcement. The dielectric constant (ε′) and dissipation factor are found to vary with filler weight percentage and frequency. The dielectric constant increases to 24.45 for 2.4 wt.% of A-TiO₂ nanoparticles. The piezo-response increases significantly from 0.6 V to 1.3 V for the nanocomposite in comparison to pure PVDF films. The results of the current study show numerous potential applications in energy-harvesting pressure sensors.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"103 - 113"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of Di-/Ferro-/Piezoelectric Properties of Sm3+-Doped ZnO Nanoparticles","authors":"Radha Verma,&nbsp;Sahil Goel,&nbsp;Komal Verma,&nbsp;Krishan Kant,&nbsp;Rajesh Kumar,&nbsp;Maneesha Garg,&nbsp;Rashi Gupta","doi":"10.1007/s11664-024-11480-4","DOIUrl":"10.1007/s11664-024-11480-4","url":null,"abstract":"<div><p>Pristine ZnO and Sm-doped ZnO nanoparticles were synthesized using a wet chemical co-precipitation technique. The morphological and structural characteristics of pristine and Sm-doped ZnO were studied by field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) techniques. Increases in lattice parameters, interplanar spacing, and volume was observed from the XRD patterns compared to its JCPDS card. Crystallite size, dislocation density, deformation stress, lattice strain, and energy density for both pristine and Sm-ZnO nanoparticles were calculated using Scherrer and Williamson–Hall (W–H) methods. An energy bandgap reduction was observed in the Sm-doped ZnO (<i>E</i>_g ~ 2.7 eV), which played a crucial role in explaining the increased leakage currents in Sm-ZnO. The Sm-doped ZnO nanoparticles exhibited a remnant polarization (<i>P</i>_r ~ 0.163 µC/cm²) and a coercive field (<i>E</i>_c ~ 25.33 kV/cm). Current–voltage (<i>I–V</i>) characteristics show maximum current generated on applying varying voltages (<i>V</i>_max = 40 V, <i>I</i>_max =  ~600 μA). Frequency- and temperature-dependent dielectric studies were conducted to examine the change in the values of the dielectric constant and dielectric loss with the variation in frequency and temperature. The Sm-doped ZnO-based nanogenerator generated an output voltage ~ 400 mV at tapping force of ~ 0.02 kgf, which makes it a prominent candidate for self-powered devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"76 - 90"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of Dielectric Properties of Binary Mixtures of n-Octanol and N,N-Dimethylformamide in Lower Microwave Radiation","authors":"N. A. Chaudhary,&nbsp;S. P. Patel,&nbsp;C. R. Vaja,&nbsp;N. K. Acharya,&nbsp;V. A. Rana,&nbsp;A. N. Prajapati","doi":"10.1007/s11664-024-11505-y","DOIUrl":"10.1007/s11664-024-11505-y","url":null,"abstract":"<div><p>The complex permittivity spectra of binary mixtures (0.0 → 1.0) of <i>n</i>-octanol and <i>N</i>,<i>N</i>-dimethylformamide (DMF) were obtained in the lower microwave radiation region using a vector network analyzer (VNA) at 293.15 K The complex permittivity spectra of <i>n</i>-octanol with DMF and binary mixtures were fitted in a dielectric relaxation model (Havriliak–Negami) to obtain the static dielectric constant (ε₀) and relaxation time (τ). Complex nonlinear least-squares (CNLS) fitting was used to fit the complex dielectric spectra. The nonlinear variation in ε₀ and τ against DMF concentration in binary mixtures of <i>n</i>-octanol + DMF indicated hetero-molecular interaction between participating molecular species. The variation in the dielectric constant and dielectric loss against concentration is discussed in light of their dependence on frequency. The microwave radiation heating parameters including power reflected (<i>p</i>_r), power transmitted (<i>p</i>_t), and penetration depth (<i>d</i>_p) were investigated at general purpose and commercial microwave radiation of 2.45 GHz, respectively.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"114 - 122"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Increasing Donor Units in Dn–σ–A (n = 1, 2, …5) Type Single-Molecule Diodes Containing Oligomers of 3,4-Ethylenedioxythiophene as Electron Donor: A DFT Study","authors":"Tabish Rasheed,&nbsp;Sandra Winnie Angelo,&nbsp;Anubhav Raghav","doi":"10.1007/s11664-024-11483-1","DOIUrl":"10.1007/s11664-024-11483-1","url":null,"abstract":"<div><p>The field of molecular electronics focuses mainly on the development of novel organic molecules that have the ability to achieve certain specific electronic functionalities due to their unique structural design and properties. One of the most exciting applications of this discipline is the organic single-molecule diode (OSMD), which can deliver efficient current rectification in electronic circuits displaying characteristics identical to those of silicon-based conventional inorganic diodes. The present study showcases newly designed organic molecular systems (OMSs) which can function as OSMDs. The general design of subject OMSs is based on the <i>D</i>_<i>n</i>–<i>σ</i>–A (<i>n</i> = 1, 2, …5) structural model, which adopts the OSMD scheme proposed by Aviram and Ratner in 1974. In these OMSs, <i>D</i>_<i>n</i>, <i>σ</i>, and <i>A</i> denote oligomeric electron donor, <i>σ</i>-bridge, and electron acceptor units, respectively. <i>n</i> represents the number of 3,4-ethylenedioxythiophene compounds which are joined together to form the oligomeric electron donor unit. The electron donor and acceptor moieties are organic compounds which have an electron-donating and electron-accepting nature, respectively. The <i>σ</i>-bridge corresponds to a <i>σ</i>-bonded organic compound that separates <i>D</i>_<i>n</i> and <i>A</i> units. The properties of all subject OMSs were simulated using Gaussian 16W quantum chemistry software. Calculations were conducted using density functional theory and the B3LYP hybrid functional along with the 6-311G(d,p) basis set. Detailed investigations were carried out to determine whether subject OMSs have the ability to function as OSMDs. Forward and reverse bias characteristics due to the simulated application of an external electric field on subject OMSs were probed using data obtained for frontier orbitals, dipole moments, and natural bond orbital charges. Also, the effect of an increasing number of donor units was systematically studied by comparative analysis. Molecular electrostatic potential maps were developed for subject OMSs to determine the electron-donating capability of different donor units. Overall, a general trend of increasing efficiency of rectification was observed with an increasing number of donor units in subject OMSs.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"91 - 102"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-Sensitivity Flexible Strain Sensor with the Inverted Pyramid Microstructure Array Based on Stress-Induced Regular Linear Cracks","authors":"Ming Chen,&nbsp;Zhi Ding,&nbsp;Weidong Wang,&nbsp;Baoyin Hou,&nbsp;Lufeng Che","doi":"10.1007/s11664-024-11474-2","DOIUrl":"10.1007/s11664-024-11474-2","url":null,"abstract":"<div><p>Crack-based flexible strain sensors inspired by a spider’s slit organs have exhibited high sensitivity. However, the sensitivity of crack-based sensors can be negatively affected by cracks with random and undirected features. In this work, we fabricated a high-sensitivity flexible strain sensor with regular linear microcracks induced by stress concentration. The sensor consists of a polydimethylsiloxane (PDMS) flexible substrate with an inverted pyramid array and a conductive metal layer of Ti/Au film that was sputtered on the substrate surface. When the sensor was stretched, stress concentrations will occur near the inverted pyramids, inducing the generation of linear microcracks perpendicular to the stretching directions between the adjacent inverted pyramids. The testing results demonstrated that the sensor has a high sensitivity (a gauge factor of 9327 in the strain range of 7.6–10%), a wide working range (0–10% strain), and a fast response/recovery time (77/82 ms). These features enable the sensor to have potential applications in health monitoring and human–computer interaction, such as finger motion recognition and neck bending direction detection.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"241 - 250"},"PeriodicalIF":2.2,"publicationDate":"2024-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-024-11474-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Factors Influencing Standard PID Test and Anti-PID Performance of Ga-Doped PERC Mono-Facial Photovoltaic Modules","authors":"Rui Tong, Wenfei Wu, Zhi Wang","doi":"10.1007/s11664-024-11471-5","DOIUrl":"https://doi.org/10.1007/s11664-024-11471-5","url":null,"abstract":"<p>The potential-induced degradation (PID) performance is of high significance for photovoltaic (PV) modules. In accordance with the IEC 61215-2: 2021 standard, we analyzed the factors that affect the measurement of PID performance, including the effects of a light soak of the <i>p</i>-type gallium (Ga)-doped silicon mono-facial PV modules, the resistivity of the water used for humidification of the environmental chamber, and the relative humidity of the chamber. We also examined the change of the modules’ anti-PID performance under the erosion by NaCl solution and by higher humidity combined with NaCl solution. The results show that a light soak pre-treatment before the PID test of the module leads to a difference of 0.02% in average power loss. The influence of humidifying water with different resistivities used in the environmental chamber on the PID test is negligible. An increase in humidity substantially reduces the anti-PID performance of the module. When the EVA film thickness was reduced from 0.65 mm to 0.55 mm, the power loss increased from 2.25% to 3.96% after the PID test. In addition, NaCl on the backsheet of the module could accelerate the PID effect under applied electric field conditions, resulting in the formation of localized darkening area observed under electroluminescence (EL) image. Finally, after the PID test in the presence of higher humidity and NaCl solution, the average power loss of the modules amounted to 10.80%, while it was 1.29% for the modules after the standard PID test. Therefore, it is vital to improve the anti-PID performance of mono-facial PV modules in a high relative humidity and salt-mist environment.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"40 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142386225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Microwave Magnetic and Dielectric Properties of YBiIG Ferrite by Ca-Zr Co-substitution","authors":"Yixin Chen, Jie Li, Yang Xiao, Kai Sun, Yiheng Rao, Yulong Liao, Yingli Liu","doi":"10.1007/s11664-024-11409-x","DOIUrl":"https://doi.org/10.1007/s11664-024-11409-x","url":null,"abstract":"<p>Yttrium iron garnet (Y₃Fe₅O₁₂, YIG) ferrite has excellent magnetic properties that are suitable for microwave communication devices. In the present research, Ca-Zr co-substituted Y_{1.83−<i>x</i>}Bi_1.17Ca_<i>x</i>Fe_5−<i>x</i>Zr_<i>x</i>O₁₂ (YBiIG, <i>x</i> = 0.00–0.15 with a step of 0.05) ferrites were prepared by a solid-state reaction method to enhance microwave magnetic and dielectric properties. The phase formation, microstructure, and magnetic and dielectric properties of the materials were investigated by x-ray diffraction, scanning electron microscopy, impedance analyzer, vibrating sample magnetometer (VSM), and ferromagnetic resonance (FMR) linewidth. The results showed that Ca²⁺-Zr⁴⁺ ions did not change the phase formation of the ferrites and enhanced the magnetic permeability <span>(mu^{{prime }})</span> (<span>(mu^{{prime }})</span> = 24.10 at 10 MHz, <i>x</i> = 0.15) and dielectric constant (<span>(varepsilon^{{prime }})</span> = 24.55 at 10 MHz, <i>x</i> = 0.15). Meanwhile, the specific saturation magnetization (<i>σ</i>_s) increased from 20.26 emu/g to 22.79 emu/g with the increase of Ca-Zr substitution, and the FMR linewidth (Δ<i>H</i>) decreased from 406.34 Oe to 339.60 Oe. The work showed that the high dielectric constant exhibited by Ca-Zr-substituted YBiIG ferrite materials has potential application value in high-frequency microwave device applications, such as circulators, isolators, phase shifters, and other microwave components.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, Optical, and Magnetic Studies of Nickel-Doped β-Ga2O3 Monoclinic and Spinel Polycrystalline Powders","authors":"Anju Babu, N. Madhusudhana Rao","doi":"10.1007/s11664-024-11452-8","DOIUrl":"https://doi.org/10.1007/s11664-024-11452-8","url":null,"abstract":"<p>β-Gallium oxide has well-studied electrical characteristics but relatively less explored optical as well as magnetic properties. In this work, pure and Ni-doped β-Ga₂O₃ polycrystalline powders were prepared using a hydrothermal method to study the structural, optical, and magnetic properties at various concentrations of Ni at 1 M%, 3 M%, 5 M%, and 7 M%. XRD analysis confirmed the formation of monoclinic β-Ga₂O₃ up to Ni 1 M% doping. The formation of additional peaks was observed exclusively for the samples doped with Ni from 3 M% to 7 M%. These additional peaks belong to NiGa₂O₄ that has an inverse spinel structure. The reflectance studies using UV–Vis diffuse reflectance spectroscopy shows a reduction in bandgap from approximately 4.7 eV to 4.1 eV with the addition of the dopant. The emission peaks observed from photoluminescence studies shows UV, blue, and green emissions with varying intensity. Room-temperature magnetic studies performed using a vibrating sample magnetometer showed a transition from the diamagnetic state of the pure sample to the antiferromagnetic state with increasing Ni concentration in the doped samples. The diamagnetic properties of β-Ga₂O₃ makes it ineffective in spintronic applications. From the present work, the improved magnetism due to Ni doping coupled with the optical properties suggests that nickel-doped gallium oxide can be used as an optical magnetic bifunctional material.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Epoxy Material Viscosity and Gold Wire Configuration on Light-Emitting Diode Encapsulation Process","authors":"C. Y. Khor, Mohd Sharizal Abdul Aziz, Chooi Jing Qi, Xing Qi Lim, M. H. H. Ishak, Mohd Arif Anuar Mohd Salleh","doi":"10.1007/s11664-024-11432-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11432-y","url":null,"abstract":"<p>This paper investigates the impacts of epoxy material viscosity and different gold wire configurations on the total maximum deformation, maximum von Mises stress, and maximum equivalent elastic strain on the light-emitting diode (LED) encapsulation process. The simulation of the LED encapsulation process employed the Volume of Fluid (VOF), Fluid–Structure Interaction (FSI), and System Coupling methods within ANSYS software. The simulation results for an epoxy molding compound (EMC) with viscosity of 0.448 kg/m·s were validated by an experiment. A grid independence test was run to determine the minimum mesh refinement required for the simulation. The results revealed that the final fluid profile of the EMC at 0.448 kg/m·s conformed more closely to the experimental results than the other epoxies. The overall best performance of the wire configuration to the EMC on the LED encapsulation process, in descending order, was the square-loop, triangle-loop, S-loop, Q-loop, and M-loop. This study contributes to understanding the effects of epoxy materials and various gold wire configurations on key mechanical parameters in the LED encapsulation process, hence guiding LED manufacturers in selecting optimal epoxy materials and wire configurations to improve process reliability and performance.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Pressure on Electronic, Magnetic Behavior, and Fermi Surface Studies of SrFe2X2 (X = P, As, Sb) Iron-Based Superconductors","authors":"R. Mahesh, P. Venugopal Reddy","doi":"10.1007/s11664-024-11406-0","DOIUrl":"https://doi.org/10.1007/s11664-024-11406-0","url":null,"abstract":"<p>In ordered to understand the electronic structure, structural phase stability, magnetic properties, and Fermi surface studies of the 122 type of SrFe₂X₂, where (X = P, As, Sb) were investigated. For this purpose, the plane wave self-consistent method was used. Using the Brich–Murnaghan equation, their electronic structure and magnetic ordering were also investigated. It was understood that, under pressure, the compound SrFe₂As₂ undergoes a structural phase change from the tetragonal phase into the collapsed tetragonal phase. Further, due to their larger lattice constants, antimonides with larger local iron magnetic moment exhibit an enhanced Hund's rule coupling. Furthermore, smaller intra-atomic exchange coupling and significantly smaller lattice constants may be the cause of the extremely small local Fe moment for phosphates. The analysis of the valence charge density in the collapsed tetragonal phase demonstrates that the interactions between As atoms are more pronounced when compressed along the <i>c</i>-axis. The strength of this interaction is primarily governed by the Fe-As chemical bonding. The collapsed tetragonal phase of SrFe₂As₂ compounds, as observed in Fermi surface studies, indicates the absence of nesting of Fermi surfaces. It is clear that, from the studies, the tetragonal phase of Fermi surface nesting resulted in the long-range magnetic order, leading to the presence of superconductivity.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"191 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142248516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}