Journal of Electronic Materials最新文献

{"title":"Transforming Polyethylene Terephthalate Waste into Activated Carbon for Supercapacitor Electrode Material: A Sustainable Approach","authors":"Kannan Kandasamy,&nbsp;Sangeetha Velusamy,&nbsp;Santheeb Balaji Velmurugan,&nbsp;Karthikeyan Eshwarasamy","doi":"10.1007/s11664-026-13078-4","DOIUrl":"10.1007/s11664-026-13078-4","url":null,"abstract":"<p>Waste polyethylene terephthalate (PET) bottles were converted into activated carbon for application as supercapacitor electrode materials using a pyrolysis and chemical activation approach. PET bottles were carbonized at temperatures between 400°C and 550°C under oxygen-free conditions to obtain carbon black, followed by chemical activation using sulfuric acid (H₂SO₄). The surface morphology and elemental composition of the PET precursor and activated carbon were examined using scanning electron microscopy and energy-dispersive x-ray analysis. Electrochemical performance was evaluated in a three-electrode system using cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance spectroscopy (EIS) in an alkaline electrolyte. Among the investigated samples, the activated carbon prepared at 400°C exhibited the highest specific capacitance of 86.38 F g⁻¹, indicating an optimal balance between carbonization and electrochemical activity. These results demonstrate the feasibility of converting PET waste into functional carbon materials and highlight their potential for sustainable energy storage applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"8779 - 8790"},"PeriodicalIF":2.8,"publicationDate":"2026-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Comparative Study of GaAs, InGaAs, and AlGaAs Capping Layers on Multilayer InAs Sub-monolayer Quantum Dots Grown by MBE","authors":"Jing Zhang,&nbsp;Ke Han,&nbsp;Shufang Ma,&nbsp;Lin Shang,&nbsp;Ruisi Cheng,&nbsp;ZiHao Zhuo,&nbsp;Bingshe Xu","doi":"10.1007/s11664-026-13114-3","DOIUrl":"10.1007/s11664-026-13114-3","url":null,"abstract":"<div><p>Heterogeneously coupled InAs sub-monolayer quantum dot (SML-QD) structures were grown via molecular beam epitaxy (MBE) in this study, where a set of comparative samples was fabricated by employing GaAs, In_0.13Ga_0.87As, and Al_0.3Ga_0.7As as capping layers, respectively. The effects of different capping layers on the optical properties and crystalline quality of the vertical multilayer InAs SML-QD structures were systematically investigated through atomic force microscopy (AFM), photoluminescence (PL) measurements, and high-resolution X-ray diffraction (HRXRD). AFM measurements revealed that Sample C with an AlGaAs capping layer exhibits the narrowest height distribution and optimal uniformity of InAs SML-QDs compared to Sample A with a GaAs capping layer and Sample B with an InGaAs capping layer. The HRXRD analysis revealed that each sample displayed multiple satellite peaks positioned around the GaAs substrate peak. Temperature-dependent PL fitting revealed that the activation energy for carriers follows the order of Sample B &gt; Sample C &gt; Sample A. The behavior of the InGaAs-capped sample is consistent with enhanced In-related intermixing and structural inhomogeneity, which may lead to broader localized-state distributions in the InAs-containing active region. This dual carrier confinement effect endows Sample B with the highest thermal escape barrier. However, due to the size inhomogeneity of the QDs, Sample B exhibits the lowest emission intensities at both 77 K and 300 K. In contrast, the AlGaAs ultrathin capping layer is likely to suppress excessive intermixing-related inhomogeneity, which is consistent with the improved room-temperature PL response of Sample C. Therefore, the AlGaAs capping layer is more suitable for fabricating high-performance optoelectronic devices operating at room temperature.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"8974 - 8983"},"PeriodicalIF":2.8,"publicationDate":"2026-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional Properties of Lead-Free Vacancy-Ordered Cs2SnI6 Double Perovskite for Energy Conversion Applications","authors":"K. Bouferrache,&nbsp;M. A. Ghebouli,&nbsp;M. Fatmi,&nbsp;Faisal K. Alanazi,&nbsp;Mustafa Jaipallah Abdelmageed Abualreish,&nbsp;S. Alomairy,&nbsp;Aseel Smerat,&nbsp;Murat Yaylacı","doi":"10.1007/s11664-026-13112-5","DOIUrl":"10.1007/s11664-026-13112-5","url":null,"abstract":"<div><p>Lead-free inorganic halide perovskites have attracted increasing interest as functional materials for sustainable energy conversion owing to their tunable electronic structures, environmental compatibility, and promising optoelectronic response. In this work, the structural, mechanical, electronic, optical, and thermoelectric properties of vacancy-ordered double perovskite Cs₂SnI₆ were investigated using first-principles density functional theory calculations. Structural optimization confirms that Cs₂SnI₆ crystallizes in a stable cubic phase with Fm−3m symmetry and an equilibrium lattice constant of 11.64 Å. The calculated elastic constants satisfy the Born mechanical stability criteria, while phonon dispersion results indicate dynamical stability. Electronic structure calculations performed using the modified Becke–Johnson potential reveal a direct bandgap of 1.35 eV at the Γ-point, indicating suitability for visible-light optoelectronic applications. Optical calculations show strong absorption in the visible region, with a maximum absorption coefficient of 1.5 × 10⁵ cm⁻¹, together with a static dielectric constant of 5.8 and a refractive index of 2.41. Thermoelectric analysis indicates favorable <i>p</i>-type transport behavior, with a Seebeck coefficient of 212 μV K⁻¹ at 300 K and an enhanced power factor of 2.8 × 10⁻³ W m⁻¹ K⁻² at 600 K. These results suggest that Cs₂SnI₆ is a promising lead-free functional energy material for photovoltaic and thermoelectric energy-conversion applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"8825 - 8842"},"PeriodicalIF":2.8,"publicationDate":"2026-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Revolutionizing Wearable Electronics: Zinc Oxide-Based Piezoelectric Nanogenerators for Mechanical Energy Harvesting","authors":"S. Korkmaz,&nbsp;İ. A. Kariper","doi":"10.1007/s11664-026-13080-w","DOIUrl":"10.1007/s11664-026-13080-w","url":null,"abstract":"<div><p>Piezoelectric nanogenerators (PENGs) have attracted growing attention as self-powered devices that can convert low-frequency mechanical motions into electrical energy for wearable electronics, biomedical sensors, smart textiles, and portable microelectronic systems. Among various piezoelectric materials, zinc oxide (ZnO) is a particularly promising candidate because of its piezoelectric and semiconducting nature, wide bandgap, biocompatibility, low toxicity, low cost, and compatibility with flexible substrates. This review discusses the operating principles of ZnO-based PENGs and examines how crystal structure, morphology, doping, substrate selection, surface modification, and device architecture affect their output performance. Particular attention is given to ZnO nanowires, nanorods, nanosheets, nanoparticles, composite films, and hybrid structures produced by hydrothermal synthesis, chemical vapor deposition, electrochemical deposition, spin coating, and related fabrication methods. Recent progress in doped ZnO systems, polymer-supported structures, textile-integrated devices, and ZnO-based hybrid architectures is critically compared in terms of efficiency, flexibility, stability, cost, and practical applicability. The review also highlights current application trends in wearable electronics, biomedical devices, environmental monitoring, and self-powered sensing systems, while discussing remaining challenges such as low output power, charge screening, mechanical fatigue, humidity sensitivity, and large-scale fabrication. Finally, future perspectives are outlined, including artificial intelligence-assisted material design, conductive polymer/ZnO hybrids, bio-integrated systems, and fully integrated PENG platforms combining energy harvesting, storage, signal conversion, and sensing. This review provides a structured overview of ZnO-based PENGs and offers guidance for the design of next-generation flexible and self-powered energy-harvesting systems.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"8416 - 8458"},"PeriodicalIF":2.8,"publicationDate":"2026-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic Ni-Zn Mixed Metal Oxide/CNT Hybrid Framework for UV Photodetectors with Enhanced Responsivity and Detectivity","authors":"P. Hari Krishnan,&nbsp;P. Anandavalli,&nbsp;T. Hemalatha,&nbsp;C. R. Bharathi","doi":"10.1007/s11664-026-13110-7","DOIUrl":"10.1007/s11664-026-13110-7","url":null,"abstract":"<div><p>The growing demand for high-performance photodetectors in intelligent sensing systems, optical communication, and environmental monitoring has stimulated the development of advanced semiconductor materials with enhanced photoresponse characteristics. However, conventional semiconductor photodetectors often suffer from rapid charge carrier recombination and limited charge transport efficiency, which degrade their performance. In this work, a novel Ni_0.5Zn_0.5O/carbon nanotube (CNT) hybrid framework was developed via a hydrothermal approach by integrating a Ni-Zn mixed metal oxide heterojunction with a conductive CNT network to improve charge separation and carrier transport. The photodetection performance of pristine Ni-ZnO, Ni-ZnO/CNT, and Ni_0.5Zn_0.5O/CNT devices was systematically investigated and compared. Structural and morphological analyses confirmed the successful formation of the hybrid nanostructures and the effective incorporation of CNTs within the Ni-Zn mixed metal oxide matrix. Optical studies revealed strong ultraviolet (UV) absorption, with the optical bandgap decreasing from 3.45 eV for Ni-ZnO to 3.28 eV for the Ni_0.5Zn_0.5O/CNT hybrid. Significant photoluminescence quenching observed for the Ni_0.5Zn_0.5O/CNT hybrid confirmed that the synergistic coupling of the Ni-Zn mixed metal oxide heterojunction and conductive CNT network promoted efficient interfacial charge transfer and carrier separation, leading to enhanced UV photodetection performance. Photodetector devices fabricated on <i>n</i>-type silicon substrates exhibited remarkable UV photoresponse under 365 nm illumination. Among the investigated materials, the Ni_0.5Zn_0.5O/CNT device demonstrated the best performance, achieving responsivity of 0.86 A W⁻¹, detectivity of 1.6 × 10¹⁰ Jones, a response time of 0.9 s, and a recovery time of 1.1 s. The enhanced performance is attributed to the combined effects of the Ni-Zn mixed metal oxide heterojunction and the conductive CNT network, which facilitate efficient charge separation and rapid carrier transport. These findings demonstrate that the Ni_0.5Zn_0.5O/CNT hybrid framework is a promising material for next-generation UV photodetector applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"9095 - 9111"},"PeriodicalIF":2.8,"publicationDate":"2026-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Swift Heavy Ion Irradiation-Induced Structural and Piezoelectric Modulation in Mn-filled PVDF–BST Flexible Nanogenerators","authors":"Shalu Peter,&nbsp;Divya Chauhan,&nbsp;Sabatini Tyagi,&nbsp;Sanjay Kumar Kedia,&nbsp;Asokan Kandasami,&nbsp;Manish Kumar Srivastava","doi":"10.1007/s11664-026-13109-0","DOIUrl":"10.1007/s11664-026-13109-0","url":null,"abstract":"<div><p>Nanocomposites of poly(vinylidene fluoride) (PVDF) and Mn-filled Ba_1−xSr_xTiO₃ (BST-Mn) thin films were fabricated and investigated before and after swift heavy ion (SHI) irradiation to understand their structural and piezoelectric nanogenerator performance. These films were deposited by the solution-casting method. The combined effects of Mn and SHI irradiation of 80 MeV O ions on the structural, morphological, optical, dielectric, and piezoelectric properties of PVDF–BST were systematically investigated. Structural analysis confirms the coexistence of <i>α</i>, <i>β</i>, and <i>γ</i> phases of PVDF, with an enhanced <i>β</i>-phase fraction induced by both doping and irradiation. Surface morphologies reveal a homogeneous dispersion of BST-Mn fillers within the PVDF matrix, contributing to the increased <i>β</i>-phase content. Optical spectroscopy results further corroborate the <i>α</i>-to-<i>β</i> phase transition, showing that moderate irradiation fluence promotes polar phase formation, whereas higher fluence induces disorder in the crystal structure. The photoluminescence (PL) spectrum exhibits a characteristic Mn-related emission peak at 575 nm, with enhanced intensity at moderate irradiation fluence, followed by quenching at higher fluence levels. Notably, the fabricated piezoelectric nanogenerators (PENGs) demonstrate significant output performance. The 2% Mn-filled BST delivers an output voltage (<i>V</i>_p–p) of 1.5 V and a peak power density of 160.3 µW/cm³ at a fluence of 5 × 10¹² ions/cm². These findings highlight the synergistic effect of Mn filler and SHI irradiation as effective strategies for tailoring PVDF-based nanocomposites for advanced piezoelectric and energy storage applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 11","pages":"9365 - 9379"},"PeriodicalIF":2.8,"publicationDate":"2026-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149176546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Dual-Metal Oxide Strategy: Enhanced Electrochemical Performance of Cu2O-MnO Composite for Asymmetric Supercapacitor","authors":"Junaid Riaz,&nbsp;Johar Zeb,&nbsp;Salah Knani,&nbsp;Samia Elattar,&nbsp;Muhammad Arif","doi":"10.1007/s11664-026-13100-9","DOIUrl":"10.1007/s11664-026-13100-9","url":null,"abstract":"<div><p>A more stable and energy-dense electrode material for the next generation of supercapacitors has been in high demand for the better part of a decade. This study developed and analyzed a Cu₂O-MnO composite as a potential positive electrode material for asymmetric supercapacitors (ASC). Structural and morphological analyses were performed using x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy (EDX) with mapping, and x-ray photoelectron spectroscopy (XPS). The Cu₂O-MnO composite shows better electrochemical performance than pure Cu₂O and MnO when tested with a 3 M KOH electrolyte. The Cu₂O-MnO composite shows a high specific capacitance of 544 F g⁻¹ at 1 A g⁻¹. The improved performance of Cu₂O-MnO composite is due to Cu₂O’s better conductivity and MnO’s electric double-layer capacitance (EDLC) behavior, which enhances ion movement and redox processes. An ASC (Cu₂O-MnO||AC) was fabricated, with activated carbon (AC) serving as the negative electrode and Cu₂O-MnO as the positive electrode. It can work with a potential window of 1.6 V. The ASC had a power density of 4800 W kg⁻¹ and an energy density of 56.44 Wh kg⁻¹. After 20,000 continuous charge–discharge cycles, the ASC still retains 97.7% of its capacitance and about 99% of its coulombic efficiency, indicating good cycling stability. The results show that the Cu₂O-MnO composite is a promising electrode material for energy storage systems that require both strength and performance.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"8764 - 8778"},"PeriodicalIF":2.8,"publicationDate":"2026-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spectroscopy and Judd–Ofelt Analysis of Y2Mo3O12:Eu3+ Phosphor for Optical Applications","authors":"Shubham Warudkar,&nbsp;Nilesh S. Ugemuge,&nbsp;Shruti P. Dhale,&nbsp;Rujuta K. Joshi,&nbsp;Sindhu Tayade,&nbsp;Hemlata Vikrant Ganvir,&nbsp;P. K. Tawalare,&nbsp;Priya Tumram,&nbsp;Nilesh Ashtankar,&nbsp;R. V. Barde","doi":"10.1007/s11664-026-13053-z","DOIUrl":"10.1007/s11664-026-13053-z","url":null,"abstract":"<div><p>The present study deals with the fluorescence of a red-light-emitting Eu³⁺-doped Y₂Mo₃O₁₂ phosphor synthesized via solid-state reaction (SSR) and co-precipitation methods. The phase purity, compound formation, chemical bonding, and morphology were confirmed through x-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), and particle size analysis, respectively. Photoluminescence studies revealed intense emission around 615 nm, corresponding to the ⁵D₀ → ⁷F₂ transition under 393 nm excitation. The study confirms that the synthesis route has a significant effect on the luminescence intensity and particle size. The obtained Commission Internationale de l'Éclairage (CIE) chromaticity coordinate values confirm intense emission in the red region with high color purity (&gt; 85%), justifying the suitability of the phosphor for red-light applications. In addition, the obtained value for the Judd–Ofelt (J–O) intensity parameter suggests asymmetric surroundings and covalent bonding nature between Eu³⁺ ions.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"9061 - 9078"},"PeriodicalIF":2.8,"publicationDate":"2026-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fe2SnO4 Inverse Spinel Ceramics: Wide-Bandgap Semiconductor with Tunable Small-Polaron Transport for NTC and Optoelectronic Applications","authors":"Mnakri Minyar,&nbsp;Saber Nasri,&nbsp;Nazir Mustapha,&nbsp;Mokhtar Hjiri,&nbsp;Malika Ben Gzaiel,&nbsp;Abderrazek Oueslati","doi":"10.1007/s11664-026-13076-6","DOIUrl":"10.1007/s11664-026-13076-6","url":null,"abstract":"<div><p>Fe₂SnO₄ inverse spinel ceramics were synthesized via a conventional solid-state reaction to establish a quantitative structure–property correlation spanning crystallography, optical response, and charge transport dynamics. X-ray diffraction with Rietveld refinement confirmed a single-phase inverse spinel structure with high crystallinity. Scanning electron microscopy revealed interconnected nanoparticles with an average diameter of ~ 41.9 nm. Ultraviolet–visible (UV–Vis) diffuse reflectance spectroscopy yielded a direct bandgap of 4.0 ± 0.12 eV and Urbach energy of 0.55 eV, indicating limited structural disorder and suitability for UV-range optoelectronic applications. Broadband impedance spectroscopy (1–10⁶ Hz, 413–553 K) demonstrated negative temperature coefficient of resistance (NTCR) behavior and non-Debye relaxation, with equivalent circuit modeling effectively separating grain and grain-boundary contributions. Alternating current (AC) conductivity analysis identified a frequency-dependent crossover between two polaronic transport regimes: correlated barrier hopping (CBH) at high frequencies and non-overlapping small-polaron tunneling (NSPT) at intermediate frequencies. Direct current (DC) conductivity followed an Arrhenius dependence with an activation energy of 0.91 eV, confirming thermally activated small-polaron hopping between Fe²⁺ and Fe³⁺ octahedral sites. These results establish a coherent framework linking lattice disorder to charge carrier dynamics in Fe₂SnO₄, highlighting its potential for NTC thermistors, UV photodetectors, and resistive gas sensors where predictable, defect-mediated conduction is essential.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"9079 - 9094"},"PeriodicalIF":2.8,"publicationDate":"2026-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Selenium Doping on Synthesis, Characterization, and Functional Properties of CdS Nanocomposites","authors":"H. E. Atyia,&nbsp;M. M. Abdel Fattah,&nbsp;M. M. Abdel-Aziz,&nbsp;Asmaa M. Abozied,&nbsp;M. Fadel","doi":"10.1007/s11664-026-13079-3","DOIUrl":"10.1007/s11664-026-13079-3","url":null,"abstract":"<div><p>This research offers a comprehensive investigation of the structural, electrical, and dielectric properties of CdS_1−<i>x</i>Se_<i>x</i> nanocomposites (where <i>x</i> = 0.00, 0.05, 0.10, and 0.15). Elemental analysis employing energy-dispersive x-ray spectroscopy (EDS) indicated the existence of only Cd and S in the undoped sample, while Se was incorporated successfully in the doped samples. Raman spectra confirmed CdS_1−<i>x</i>Se_<i>x</i> formation, showing a redshift of the longitudinal optical (LO) peak and reduced crystalline quality with increasing Se content. X-ray diffraction (XRD) results confirmed a cubic CdS structure and successful Se incorporation as evidenced by peak shifts and lattice expansion, with no secondary phases. Scanning electron microscopy (SEM) images revealed rough, agglomerated micron-sized clusters across all samples, while analysis using transmission electron microscopy (TEM) confirmed the formation of quasi-spherical nanoparticles in the 7–9 nm range, verifying the successful synthesis of CdS-based nanostructures. Alternating current (AC) conductivity (<span>(sigma_{{{text{AC}}}})</span>) and dielectric characteristics were investigated at 303–393 K with frequencies ranging from 0.1 kHz to 1000 kHz. For both undoped and Se-doped samples, <span>(sigma_{{{text{AC}}}})</span> obeyed Jonscher’s universal power law (<span>(sigma_{{{text{AC}}}} = Aomega^{S})</span>), showing hopping conduction. The correlated barrier hopping (CBH) model accurately characterized the conduction process. Additionally, <span>(sigma_{{{text{AC}}}})</span> exhibited a nonlinear increase with temperature at different frequencies, confirming thermally activated conduction with semiconductor behavior at low temperature. The values of the dielectric loss and dielectric constant were calculated as a function of temperature and frequency. A Debye-type dielectric relaxation was observed only in Se-doped CdS nanocomposites. The relaxation process was thermally activated, and the activation energy was observed to decrease with increased Se_<i>x</i> doping, suggesting enhanced charge carrier mobility due to the doping process.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 10","pages":"8950 - 8973"},"PeriodicalIF":2.8,"publicationDate":"2026-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148909548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}