Journal of Electronic Materials最新文献_第6页

Effect of the GeTe Defect Monolayer on Thermoelectric Properties GeTe 缺陷单层对热电特性的影响

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-28 DOI: 10.1007/s11664-024-11343-y

Hao Qin, Ziyu Hu, Xiaohong Shao

{"title":"Effect of the GeTe Defect Monolayer on Thermoelectric Properties","authors":"Hao Qin, Ziyu Hu, Xiaohong Shao","doi":"10.1007/s11664-024-11343-y","DOIUrl":"https://doi.org/10.1007/s11664-024-11343-y","url":null,"abstract":"Two-dimensional (2D) GeTe is a popular medium-temperature thermoelectric material, but few studies have focused on strategies for improving its thermoelectric performance. To further investigate the thermoelectric properties of two-dimensional GeTe, different atomic defects are introduced, and the electronic structure and thermoelectric properties are systematically investigated via first-principles calculations and the semiclassical Boltzmann theory. Compared with that of three-dimensional (3D) GeTe, the Seebeck coefficient of 2D GeTe increases from 144 μV K−1 to 560 μV K−1 at 700 K, and the thermal conductivity decreases from 3.3 W m−1 K−1 to 2.3 W m−1 K−1. Thus, the ZT value increases from 0.8 to 1.14. On the basis of these results, the influence of vacancy atomic defects on the thermoelectric performance is investigated. With single-atom defects (SV-Ge and SV-Te), the ZT value increases at constant temperature. However, for double-atom defects in monolayer GeTe, the ZT value increases when DV-585 defects are present but decreases to varying degrees when DV-Ge and DV-Te defects are present. The ZT value of monolayer GeTe with DV-585 defects has an average increase of 0.56 at 300–800 K, which accords well with the experimental results. This study indicates that introducing single-atom vacancy defects somewhat improves the thermoelectric performance of monolayer GeTe, which provides an important point of reference for the development of GeTe in the two-dimensional materials field.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental and Theoretical Investigation of a Novel Acrylic Acid Gas Sensing Device Based on CuScO2 Microsheets 基于 CuScO2 微片的新型丙烯酸气体传感装置的实验和理论研究

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-28 DOI: 10.1007/s11664-024-11380-7

Hai Liu, Yu Zong, Lunchao Zhong, Wenhuan Zhu

{"title":"Experimental and Theoretical Investigation of a Novel Acrylic Acid Gas Sensing Device Based on CuScO2 Microsheets","authors":"Hai Liu, Yu Zong, Lunchao Zhong, Wenhuan Zhu","doi":"10.1007/s11664-024-11380-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11380-7","url":null,"abstract":"The interaction of a sensitive oxide with a target gas determines its chemiresistive signal; however, the lack of a fundamental theoretical model currently hinders its wide application. In this work, CuScO2 microsheets are synthesized by a simple hydrothermal method, which brings about the first oxide-based acrylic acid gas sensor. It exhibits high selectivity for acrylic acid, outperforming other volatile organic compound (VOC) gases, including methanol, ethanol, formaldehyde, toluene, acetonitrile, and acetone, with a high response (up to 7–10 ppm acrylic acid) and an ultralow detection limit down to sub-ppm level (14 ppb) at a low operating temperature of 160°C. Compared to the chromatographic techniques, the proposed CuScO2 gas sensor represents a prominent chemiresistive effect favorable for the simple and efficient monitoring of acrylic acid gas, which is significant for human health. In addition, the remarkable gas sensing properties of CuScO2 are elucidated by a new mechanism based on the results of microstructural characterization and first-principles calculations followed by energy band analysis. Instead of the classic ambient oxygen ionosorption, Cu and Sc atoms on the solid surface play the crucial roles in target gas adsorption and electron transfer procedures, respectively. Such synergistic effect of metal atoms offers a new perspective for the design of material systems for advanced gas sensing devices.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"122 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Judd–Ofelt Analysis and Photoluminescence in Ca2MgSi2O7: Sm3+ Phosphor Ca2MgSi2O7 中的 Judd-Ofelt 分析和光致发光：Sm3+ 磷光体

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-27 DOI: 10.1007/s11664-024-11375-4

Akshay Pimpalkar, Nilesh Ugemuge, Ashok Mistry, Shruti Dhale, Rujuta Barve Joshi, Sarika Khapre, Sanjiv Moharil

引用次数: 0

Novel Application of Porous Mg-Doped 2223-BPSCCO Superconductor-Induced Metastable Plumbane as Hydrogen Storage 多孔掺镁 2223-BPSCCO 超导瞬变铅垂体作为储氢装置的新应用

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-27 DOI: 10.1007/s11664-024-11355-8

Khaled M. Elsabawy, Ahmed M. Fallatah, Zeid O. Owidah

{"title":"Novel Application of Porous Mg-Doped 2223-BPSCCO Superconductor-Induced Metastable Plumbane as Hydrogen Storage","authors":"Khaled M. Elsabawy, Ahmed M. Fallatah, Zeid O. Owidah","doi":"10.1007/s11664-024-11355-8","DOIUrl":"https://doi.org/10.1007/s11664-024-11355-8","url":null,"abstract":"A series of superconducting samples including pure Bi2Sr2Ca2C3O10 (BSCCO), Pb-doped BSCCO (Bi1.35Pb0.65Sr2Ca2Cu3O10), Mg-doped BSCCO (Bi1.65Mg0.35Sr2Ca2Cu3O10), and optimally co-doped Pb-Mg-BSCCO with an optimal formula of BiPb0.65Mg0.35Sr2Ca2Cu3O10 (108K superconductor) were carefully synthesized and optimized with a maximum ratio of incorporated lead and magnesium, achieving both quality of structural features and an improved Tc offset of 108 K. The optimized porous sample was well characterized via x-ray diffraction, Raman spectroscopy, field-emission scanning electron microscopy (FE-SEM), and three-dimensional atomic force microscopy (3D-AFM). In addition, the Brunauer–Emmett–Teller (BET) specific surface area was estimated at 11.9 m2g−1. Porous Mg-doped BPSCCO exhibited high performance efficiency for H2 storage, recording maximum H2 uptake of 5.92 wt.% at a temperature of 270°C and pressure of 14 bar. A mechanism of loaded hydrogen was proposed. Magnesium and lead incorporated in 2223-BPSCCO were suggested to play a vital role in hydrogen storage as Mg hydride and Pb as plumbane.<h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantitative Analysis and Prediction of Elastic Properties of Tungstate–Tellurite Glasses Doped with Bi2O3 掺杂 Bi2O3 的钨碲玻璃的定量分析和弹性特性预测

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-26 DOI: 10.1007/s11664-024-11352-x

R. El-Mallawany, Amin Abd El-Moneim, I. Z. Hager, H. Mahfouz, H. A. Othman

{"title":"Quantitative Analysis and Prediction of Elastic Properties of Tungstate–Tellurite Glasses Doped with Bi2O3","authors":"R. El-Mallawany, Amin Abd El-Moneim, I. Z. Hager, H. Mahfouz, H. A. Othman","doi":"10.1007/s11664-024-11352-x","DOIUrl":"https://doi.org/10.1007/s11664-024-11352-x","url":null,"abstract":"In this work, the elastic properties of two tellurite glass series 80TeO2-(20−x)WO3-xBi2O3 (80TeWBi) and 70TeO2-(30−x)WO3-xBi2O3 (70TeWBi) (where x = 0 mol.%, 5 mol.%, and 10 mol.%) were quantitatively analyzed and predicted. Many structural and compositional parameters, including the density of network bonds, mean cross-link density, average bond-stretching force constant, total packing density, and dissociation energy per unit volume, were calculated using bond compression (BC), ring deformation (RD), and Makishima–Mackenzie (M–M) models. These parameters were correlated with experimental elastic properties to explore the structural role of WO3 and Bi2O3 in the tellurite network. It was found that WO3 enters the tellurite network of Bi2O3-free 80TeO2-20WO3 and 70TeO2-30WO3 glasses as a network former. This stiffened the structure through the formation of WO4 tetrahedral units, WO6 octahedral units, and Te–O–W linkages. As a result, the theoretical bulk modules (Kbc) increased from 73.23 GPa to 83.90 GPa whereas the theoretical Poisson's ratio decreased from 0.235 to 0.225 with increasing WO3 mol.%. Meanwhile, Bi2O3 enters the network of TeO2-WO3-Bi2O3 glasses as a network modifier. This weakens the glass structure and results in the transformation of some TeO4 trigonal bipyramids into TeO3 trigonal pyramids by breaking the Te–O–W linkages and creating non-bridging oxygen atoms. Excellent agreement was achieved between the theoretical and experimental values of elastic moduli and Poisson's ratio.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"6 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Various Substrates on the Structure and Properties of BiFe0.91Zr0.09O3 Thin Films 不同基底对 BiFe0.91Zr0.09O3 薄膜结构和性质的影响

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-22 DOI: 10.1007/s11664-024-11376-3

Zhen Jiang, Zhibiao Ma, Yuan Liu, Jingxian He, Shuhui Sun, Zhenfeng Jing, Fengqing Zhang

{"title":"Effects of Various Substrates on the Structure and Properties of BiFe0.91Zr0.09O3 Thin Films","authors":"Zhen Jiang, Zhibiao Ma, Yuan Liu, Jingxian He, Shuhui Sun, Zhenfeng Jing, Fengqing Zhang","doi":"10.1007/s11664-024-11376-3","DOIUrl":"https://doi.org/10.1007/s11664-024-11376-3","url":null,"abstract":"BiFe0.91Zr0.09O3 (9BFZrO)/LaNiO3 (LNO)/MgO and 9BFZrO/LNO/Si multilayers were prepared by the sol–gel method using MgO and Si single crystals as substrates, and LNO films with a thickness of approximately 50 nm were deposited by magnetron sputtering to form bottom electrodes and transition layers. The effects of different substrates on the crystal structure, phase composition, oxygen vacancy content, ferroelectric properties, dielectric properties, leakage mechanism, and ageing properties of the 9BFZrO films were systematically analysed. X-ray diffraction showed that the prepared 9BFZrO thin films had a structure composed of both rhombic R3c and orthogonal Pnma phases, and the films prepared on the MgO substrate contained a significant amount of the R3c phase. SEM analysis showed that the thin film prepared on the MgO substrate had a relatively large grain size. X-ray photoelectron spectroscopy showed that the Fe2+ content and oxygen vacancy defect concentration of the MgO substrate samples were relatively low. The thin film prepared on the MgO substrate has a high residual polarization strength (2Pr = 60.28 μC/cm2) and a low leakage current density (4.71 × 10−6 A/cm2). After 90 days of room-temperature ageing, the residual polarization strength (2Pr) of the film on the MgO substrate decreased by 16.8%, with a lower ageing degree and better stability.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"77 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical Investigation of the Impact of Temperature on a-Si and GaAs/a-Si Semiconductor Solar Cells 温度对非晶硅和砷化镓/非晶硅半导体太阳能电池影响的数值研究

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-22 DOI: 10.1007/s11664-024-11364-7

Nafissa Moussaoui, Lamia Benhamadouche, Abdelouahab Djoubair Benhamadouche

{"title":"Numerical Investigation of the Impact of Temperature on a-Si and GaAs/a-Si Semiconductor Solar Cells","authors":"Nafissa Moussaoui, Lamia Benhamadouche, Abdelouahab Djoubair Benhamadouche","doi":"10.1007/s11664-024-11364-7","DOIUrl":"https://doi.org/10.1007/s11664-024-11364-7","url":null,"abstract":"There is a pressing need for investigations of solar conversion systems to enhance and perfect the use of this expandable energy resource. This necessitates additional research on the development of solar cells, which are the mainstay of these systems. In this regard, the purpose of this study is to examine, using numerical modeling, the impact of cell temperatures in the range of 270–340 K on solar cell performance and efficiency. Two configurations are considered based on different overlapping materials. A solar cell type ZnO/a-Si(n)/a-Si(p) (single-junction) with thickness of 25 nm, 50 nm, and 2500 nm, respectively, and a solar cell type ZnO/GaAs(p)/a-Si(n)/a-Si(p) (double-junction) with thickness of 25 nm, 100 nm, 50 nm, and 2500 nm, respectively, are examined. The electrical characteristics, fill factor (FF), and efficiency (ɳ) are extracted to highlight the results of the present study. Numerical analysis was performed using AMPS-1D (One-Dimensional Device Simulation for Analysis of Microelectronic and Photonic Structures), a modeling and analysis program. This analysis enabled the establishment of a causal relationship between the features of the considered solar cells and their corresponding material attributes, and the production process. After different adjustments and refinements, the results for the single-junction cell presented parameter values of ({J}_{text{SC}}=text{32.21 m}) A/cm2, ({V}_{text{OC}}=text{0.81 V}), and FF = 0.75, resulting in efficiency of ɳ = 19.58%. For the double-junction cell, the analysis revealed parameter values of ({J}_{text{SC}}=text{37.75 mA}/{text{cm}}^{2}), ({V}_{text{OC}}=text{0.789 V}), and FF = 0.86, corresponding to efficiency of ɳ = 25.70%.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Photovoltaic Performance of Heavy-Metal-Free AgInS2 Quantum Dot-Sensitized Solar Cells Using a Facile SILAR Method 利用简便的 SILAR 方法提高无重金属 AgInS2 量子点敏化太阳能电池的光伏性能

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-20 DOI: 10.1007/s11664-024-11365-6

Siti Utari Rahayu, Yu-Rou Wang, Ming-Way Lee

{"title":"Enhanced Photovoltaic Performance of Heavy-Metal-Free AgInS2 Quantum Dot-Sensitized Solar Cells Using a Facile SILAR Method","authors":"Siti Utari Rahayu, Yu-Rou Wang, Ming-Way Lee","doi":"10.1007/s11664-024-11365-6","DOIUrl":"https://doi.org/10.1007/s11664-024-11365-6","url":null,"abstract":"This study investigates the synthesis of heavy-metal-free AgInS2 quantum dots (QDs) using a facile successive ionic layer adsorption and reaction (SILAR) method, exploring their application in quantum dot-sensitized solar cells (QDSSCs). The AgInS2 QDs were grown on mesoporous TiO2 via a two-stage SILAR process at room temperature. The optimization of Ag-S SILAR cycles (n) was performed to determine the ideal conditions, while the In-S SILAR cycles were held constant at seven cycles. X-ray diffraction (XRD) pattern analysis revealed an orthorhombic crystalline structure of the synthesized AgInS2 QDs. Analysis of the optical spectra revealed a reduction in the optical energy bandgap (Eg,op) of AgInS2 QDs from 2.00 eV to 1.92 eV and further to 1.78 eV as the value of n increased from 1 to 3. Employing AgInS2 QDs, a polysulfide electrolyte, and a CuS counter electrode, liquid-junction semiconductor QDSSCs were fabricated. Optimal conditions were achieved at n = 2, resulting in outstanding power conversion efficiency (PCE) of 3.57% (Jsc = 8.56 mA/cm2, Voc = 0.64 V, FF = 65.2%). Under reduced light intensity (0.25 sun), the PCE increased to 5.26%. The external quantum efficiency (EQE) spectrum of the best cells spanned 400−700 nm, maintaining a nearly constant EQE value of ~ 65% within the 400−600 nm range. Remarkably, the PCE achieved surpassed previously reported liquid-junction AgInS2 QDSSCs. These findings highlight the facile production of heavy-metal-free AgInS2 QDs through a room-temperature SILAR method and the tunable optical properties of AgInS2 QDs by controlling Ag-S SILAR cycles, revealing their potential as an efficient solar absorber.<h3 data-test=\"abstract-sub-heading\">Graphical Abstract</h3>\u0000","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"131 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution-Free Melt-Grown CsGeI3 Polycrystals for Lead-Free Perovskite Photovoltaics: Synthesis, Characterization, and Theoretical Insights 用于无铅过氧化物光伏技术的无溶液熔融生长 CsGeI3 多晶体：合成、表征和理论启示

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-19 DOI: 10.1007/s11664-024-11377-2

Mariot Jose Panjikaran, A. Pramitha, Vikash Mishra, Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu, Nagabhushan Jnaneshwar Choudhari, Abdelmajid Timoumi, Y. Raviprakash

{"title":"Solution-Free Melt-Grown CsGeI3 Polycrystals for Lead-Free Perovskite Photovoltaics: Synthesis, Characterization, and Theoretical Insights","authors":"Mariot Jose Panjikaran, A. Pramitha, Vikash Mishra, Ganesh Shridhar Hegde, Ashwatha Narayana Prabhu, Nagabhushan Jnaneshwar Choudhari, Abdelmajid Timoumi, Y. Raviprakash","doi":"10.1007/s11664-024-11377-2","DOIUrl":"https://doi.org/10.1007/s11664-024-11377-2","url":null,"abstract":"Inorganic lead-free metal halide perovskites are being rigorously explored as a substitute for organic lead-based materials for various energy device applications. Germanium as a replacement for lead has been proven to give exemplary results theoretically, and there have been promising results. The current work presents the investigation of CsGeI3 (CGI) polycrystals grown using a solution-free melt-growth technique with low-cost precursors. A soak-ramp profile was designed to synthesize polycrystalline powders, which were evaluated for stability. X-ray diffraction and Raman spectroscopy analysis suggest the formation of CsGeI3 perovskite powders, matching the reported literature. Diffuse reflectance spectroscopy measurements showed the bandgap of the polycrystals to be around 1.6 eV. A prominent photoluminescence peak was obtained at 767 nm. The powders were examined using thermogravimetric analysis to assess the thermal degradation pathways. The as-grown inorganic perovskite polycrystals were relatively stable during storage under ambient conditions. Theoretical studies were also carried out to support the experimental data. Calculations were performed with different approximations, including local density approximation (LDA), generalized gradient approximation (GGA), and Heyd–Scuseria–Ernzerhof (HSE) approximation, out of which the HSE approximation yielded the most accurate results that matched the experimental findings. Moreover, for the CGI device with Ag electrodes simulated using SCAPS-1D software, highest incident photon-to-electron conversion efficiency was observed. The obtained optical and structural properties indicate the suitability of the synthesized CsGeI3 perovskite polycrystals for photovoltaic applications, specifically solar cells and light-emitting diodes.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimal Doping of Ho3+ in CaTiO3 Perovskite for Enhanced Photoluminescence and Sustainable Green Emission 在 CaTiO3 包晶石中优化掺杂 Ho3+，实现增强型光致发光和可持续绿色发射

IF 2.1 4区工程技术

Journal of Electronic Materials Pub Date : 2024-08-17 DOI: 10.1007/s11664-024-11345-w

Vijay Singh, Aadil Ahmad Bhat, Abhijeet R. Kadam, S. Saravanakumar, Pankaj Kumar Tripathi, S. J. Dhoble, Ji Bong Joo

{"title":"Optimal Doping of Ho3+ in CaTiO3 Perovskite for Enhanced Photoluminescence and Sustainable Green Emission","authors":"Vijay Singh, Aadil Ahmad Bhat, Abhijeet R. Kadam, S. Saravanakumar, Pankaj Kumar Tripathi, S. J. Dhoble, Ji Bong Joo","doi":"10.1007/s11664-024-11345-w","DOIUrl":"https://doi.org/10.1007/s11664-024-11345-w","url":null,"abstract":"In this work, the synthesis of Ho3+-doped calcium titanate perovskite (CaTiO3) revealed significant photoluminescence (PL) properties, predominantly displaying a distinct green emission. The investigation explored Ho3+-doped CaTiO3 perovskite synthesized via the sol–gel method. Structural analysis confirmed an orthorhombic crystal structure through powder x-ray diffraction (XRD) and Rietveld refinement, while Fourier transform infrared (FT-IR) spectroscopy confirmed the presence of functional groups in Ho3+-doped CaTiO3. Diffuse reflectance spectroscopy (DRS) revealed a charge transfer band between O2− and Ho3+ ions in the range of 250–350 nm, supported by photoluminescence excitation (PLE) spectra. A bandgap of 3.39 eV was found for Ho3+-doped CaTiO3. At 0.03 mol Ho3+, the PLE band intensity was saturated, indicating optimal excitation efficiency. Emission spectra revealed distinct intra 4f–4f transitions, particularly a green emission at 545 nm under 454 nm excitation corresponding to 5F4 + 5S2 → 5I8 transition. The PL intensity reached its peak at 0.03 mol Ho3+ and then decreased due to concentration quenching. Color purity reached ~90%, highlighting its potential in applications requiring precise green emission. The results of the study suggest that this perovskite is well suited for optoelectronics, lighting, displays, or industries that require specific green light emission properties.","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":2.1,"publicationDate":"2024-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142176963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0