Journal of Electronic Materials最新文献_第5页

High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se) 新型层状结构CdSbX3 （X = S和Se）的高热电性能

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-21 DOI: 10.1007/s11664-024-11510-1

Marwa Haouam, Ali Hamidani, Nor Rebah, Kamel Zanat

{"title":"High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se)","authors":"Marwa Haouam, Ali Hamidani, Nor Rebah, Kamel Zanat","doi":"10.1007/s11664-024-11510-1","DOIUrl":"10.1007/s11664-024-11510-1","url":null,"abstract":"<div><p>In this work, based on first-principles calculations and Boltzmann transport theory, we have investigated the structural, electronic, mechanical, and thermoelectric properties of <span>(hbox {CdSbS}_{3})</span> and <span>(hbox {CdSbSe}_{3})</span> compounds, which are two novel members of the <span>(hbox {MAX}_{3})</span> family. We found that these compounds are semiconductors with a narrow band gap. In addition, they are both mechanically, dynamically, and thermodynamically stable. The results show that their interlayer distances are wider than almost all transition metal dichalcogenide compounds. Furthermore, we report that the lattice thermal conductivity,<span>(kappa _{text{l}})</span>, at room temperature for <span>(hbox {CdSbS}_{3})</span> is 0.53 W m<sup>−1</sup> K<sup>−1</sup> and 0.13 W m<sup>−1</sup> K<sup>−1</sup> for <span>(hbox {CdSbSe}_{3})</span>. This latter value is similar to that of <span>(hbox {ZnPSe}_{3})</span>, which was found to be lower than all other 2D materials. More remarkably, the thermoelectric figure of merit of <span>(hbox {CdSbS}_{3})</span> reaches as high as 2.34 at 1400 K and 2.68 for <span>(hbox {CdSbSe}_{3})</span> at 850 K, which is a record high value at this temperature.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"389 - 402"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ni Ion-Induced Optical, Structural, and Electrical Properties of Polyaniline/Polyvinyl Chloride Composites 镍离子诱导的聚苯胺/聚氯乙烯复合材料的光学、结构和电学特性

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-18 DOI: 10.1007/s11664-024-11516-9

Saloni Sharma, Kanchan L. Singh, Mukesh Kumar, Rajesh Kumar, Sangeeta Prasher

{"title":"Ni Ion-Induced Optical, Structural, and Electrical Properties of Polyaniline/Polyvinyl Chloride Composites","authors":"Saloni Sharma, Kanchan L. Singh, Mukesh Kumar, Rajesh Kumar, Sangeeta Prasher","doi":"10.1007/s11664-024-11516-9","DOIUrl":"10.1007/s11664-024-11516-9","url":null,"abstract":"<div><p>Thin films of polyaniline/polyvinyl chloride (PANI/PVC) composites synthesized and irradiated with a nickel ion (Ni<sup>7+</sup>) beam using flux of 3.125<span>(times)</span>10<sup>9</sup> particles/cm<sup>2</sup>/s and fluence ranging between 3<span>(times)</span>10<sup>11</sup> and 1<span>(times)</span>10<sup>13</sup> particles/cm<sup>2</sup> were investigated with respect to their optical, structural, and electrical properties. The photoluminescence (PL) analysis showed that swift heavy ion (SHI) irradiation caused the creation of new color centers, which were diminished at greater fluence. With irradiation, both the direct and indirect band gaps decreased, making the materials more conducive to conduction. However, the direct band gap was smaller than the indirect band gap. Fourier transform infrared (FTIR) analysis showed that the aromatic nature of PANI was not disturbed by SHI irradiation. The variation in capacitance with frequency indicated that the material can be used for electromagnetic interference (EMI) shielding, and the shielding properties are modified by ion irradiation. Scanning electron microscopy (SEM) analysis revealed that irradiation of the polymer with Ni<sup>7+</sup> leads to chain scissoring and cluster formation, whereas at higher fluence, smaller parts are rearranged to form micro-clusters.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"129 - 140"},"PeriodicalIF":2.2,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

n-Type AlCuFeMn Medium-Entropy Alloy with Reduced Thermal Conductivity: A Prospective Thermoelectric Material 降低导热系数的n型AlCuFeMn中熵合金：一种有前途的热电材料

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-18 DOI: 10.1007/s11664-024-11518-7

Palash Swarnakar, Abhigyan Ojha, Partha Sarathi De, Sivaiah Bathula, Amritendu Roy

{"title":"n-Type AlCuFeMn Medium-Entropy Alloy with Reduced Thermal Conductivity: A Prospective Thermoelectric Material","authors":"Palash Swarnakar, Abhigyan Ojha, Partha Sarathi De, Sivaiah Bathula, Amritendu Roy","doi":"10.1007/s11664-024-11518-7","DOIUrl":"10.1007/s11664-024-11518-7","url":null,"abstract":"<div><p>Developing affordable thermoelectric (TE) materials is critical for efficient waste heat recovery in industries. With the goal of developing novel, affordable TE materials, the present experimental–theoretical investigation, for the first time, presents a rigorous analysis of the electrical and thermal transport properties of a multi-principal-component AlCuFeMn alloy (MPCA). TE properties related to electronic transport, including the Seebeck coefficient, electrical conductivity, and thermal conductivity, were measured on a vacuum-cast sample and were computed using semi-classical Boltzmann transport theory. Additionally, ab initio calculations were performed to calculate the lattice thermal conductivity. The alloy demonstrated overall thermal conductivity of < 4 W/mK, comparable to conventional thermoelectric materials, while the computed lattice thermal conductivity was < 1 W/mK. Such low thermal conductivity may be attributed to the complex microstructure as well as the uniform distribution of aluminium in the matrix. The power factor of the alloy, however, was small (< 0.1 mW/mK<sup>2</sup>), translating to a low figure of merit (<i>ZT</i> ~ 0.01). Our study indicates that composition engineering can potentially improve the power factor and thus the overall TE response in an AlCuFeMn alloy.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"378 - 388"},"PeriodicalIF":2.2,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Structural Evolution, Piezoelectric and Ferroelectric Properties of (1−x)Bi4Ti3O12-xCaBi2Nb2O9 High-Temperature Composite Ceramics （1−x）Bi4Ti3O12-xCaBi2Nb2O9高温复合陶瓷的结构演变、压电和铁电性能

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-16 DOI: 10.1007/s11664-024-11527-6

Zhipeng Zhang, Zong-Yang Shen, Zhumei Wang, Tao Zeng, Wenqin Luo, Fusheng Song, Yueming Li

{"title":"Structural Evolution, Piezoelectric and Ferroelectric Properties of (1−x)Bi4Ti3O12-xCaBi2Nb2O9 High-Temperature Composite Ceramics","authors":"Zhipeng Zhang, Zong-Yang Shen, Zhumei Wang, Tao Zeng, Wenqin Luo, Fusheng Song, Yueming Li","doi":"10.1007/s11664-024-11527-6","DOIUrl":"10.1007/s11664-024-11527-6","url":null,"abstract":"<div><p>High leakage current density and relatively low piezoelectric activity have become one of the main obstacles to expanding the practical application of Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> (BIT) high-temperature piezoelectric ceramics. Although ion doping can improve electrical resistivity and piezoelectric response, it often lowers the Curie temperature. In this work, by introducing CaBi<sub>2</sub>Nb<sub>2</sub>O<sub>9</sub> (CBN) with higher Curie temperature to BIT, a composite ceramic (1−<i>x</i>)BIT-<i>x</i>CBN was designed, and the effect of CBN content on the structure and electrical properties of the ceramics was investigated. With the increase in the <i>x</i> value, the intensity of the highest peak (117) gradually decreased until disappearing, while the intensity of peak (115) gradually increased, and the X-ray diffraction (XRD) refinement results showed that some non-stoichiometric compounds, Bi<sub>1.74</sub>Ti<sub>2</sub>O<sub>6.624</sub> and Ca<sub>0.5</sub>Bi<sub>2.5</sub>Ti<sub>0.5</sub>Nb<sub>1.5</sub>O<sub>9</sub>, were produced. The sheet-like grains were effectively suppressed, while the granular grains became prominent with high CBN doping content, which should contribute to improving the electrical resistivity of ceramics. The optimal electrical properties were obtained in 0.8BIT-0.2CBN composite ceramics as follows: the piezoelectric coefficient <i>d</i><sub>33</sub> = 13.8 pC/N, the Curie temperature <i>T</i><sub>C</sub> = 765°C, and the electrical resistivity ρ<sub>dc</sub> = 8.52 × 10<sup>5</sup> Ω·cm (@ 500°C). In addition, the <i>d</i><sub>33</sub> maintained 89.1% of the initial value after annealing at 550°C, showing good thermal stability for high-temperature sensing applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"370 - 377"},"PeriodicalIF":2.2,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correlation Between Structural, Electrical, and Optical Properties of ZnO:In for Ethanol Gas Sensing Application ZnO结构、电学和光学性质的相关性：在乙醇气体传感中的应用

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-16 DOI: 10.1007/s11664-024-11508-9

Fatemeh Montazeri Davoodi, Seyed Mohammad Rozati, Sahar Soltani

{"title":"Correlation Between Structural, Electrical, and Optical Properties of ZnO:In for Ethanol Gas Sensing Application","authors":"Fatemeh Montazeri Davoodi, Seyed Mohammad Rozati, Sahar Soltani","doi":"10.1007/s11664-024-11508-9","DOIUrl":"10.1007/s11664-024-11508-9","url":null,"abstract":"<div><p>Indium-doped zinc oxide (ZnO:In) thin films were prepared using the spray pyrolysis technique, and the effects of indium concentration on the structural, optical, electrical, and sensing properties of the ZnO:In films were investigated. The indium concentration was varied between 0 wt.% and 15 wt.%. The results show a polycrystalline structure for all layers using x-ray diffraction. The lowest sheet resistance of approximately 120 Ω/□ was achieved with an indium concentration of 5 wt.% in the starting solution. The morphological properties of the thin films were investigated using field-emission scanning electron microscopy. The results indicate that an increase in the indium concentration disrupts the nano-granular structure of the surface, the surface becomes wrinkled, and a snowflake-like pattern is formed on the surface of the thin film. The ethanol sensing properties of the samples were studied using an electric circuit. Sensing parameters including the dynamic response, sensitivity, and response/recovery times of the samples were investigated. For an ethanol concentration of 200 ppm, the gas response of the pure ZnO layer was about 1.05. An increase in the indium concentration to 15 wt.% was found to improve the gas response of the samples. For an ethanol concentration of 200 ppm, the gas response of the ZnO:In (15 wt.%) layer increased to 1.82.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"273 - 284"},"PeriodicalIF":2.2,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unveiling the Potential of Zn-MOF/GO Nanoarchitectures for Highly Sensitive and Stable Ammonia Sensing at Ambient Conditions 揭示Zn-MOF/GO纳米结构在环境条件下高度敏感和稳定的氨传感的潜力

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-15 DOI: 10.1007/s11664-024-11506-x

Zakaria M. Ali, Mohamed E. El Sayed, Ahmed Samir, Mohammad N. Murshed

{"title":"Unveiling the Potential of Zn-MOF/GO Nanoarchitectures for Highly Sensitive and Stable Ammonia Sensing at Ambient Conditions","authors":"Zakaria M. Ali, Mohamed E. El Sayed, Ahmed Samir, Mohammad N. Murshed","doi":"10.1007/s11664-024-11506-x","DOIUrl":"10.1007/s11664-024-11506-x","url":null,"abstract":"<div><p>This work reports the synthesis and characterization of a zinc-based metal–organic framework (Zn-MOF) and its nanocomposite with graphene oxide (GO) for room-temperature ammonia (NH<sub>3</sub>) sensing. The Zn-MOF/GO nanocomposite was prepared via an innovative solvothermal approach and comprehensively characterized using x-ray diffraction, UV–visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, and thermogravimetric analysis. The nanocomposite demonstrated exceptional NH<sub>3</sub> sensing performance at ambient conditions, exhibiting a linear response from 20 ppm to 220 ppm, a significant 13.2% response towards 100 ppm NH<sub>3</sub>, and rapid response/recovery times of 102/127 s. Notably, the sensor maintained long-term stability, with 12.4% average sensitivity over 50 days. The synergistic effects between GO and Zn-MOF components, coupled with the high surface area and porous structure, contributed to the superior sensing characteristics. A strong linear correlation (<i>R</i><sup>2</sup> = 0.9906) between sensor response and NH<sub>3</sub> concentration enabled precise quantitative detection. This study not only introduces a novel material for NH<sub>3</sub> sensing but also provides crucial insights into the structure–property relationships governing nanocomposite gas sensors. The findings open new avenues for designing high-performance chemiresistive gas sensors operating at ambient conditions, with potential applications in environmental monitoring and industrial safety.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"262 - 272"},"PeriodicalIF":2.2,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

One-Step Electrochemical Modification of Pencil Graphite Electrode with Poly(DPASA-co-VP)-RuO2NPs and its Application for the Trace Analysis of Sumatriptan 聚(DPASA-co-VP)-RuO2NPs一步电化学修饰铅笔石墨电极及其在苏马曲坦痕量分析中的应用

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-09 DOI: 10.1007/s11664-024-11509-8

Mansoureh Lalei, Kobra Zarei

{"title":"One-Step Electrochemical Modification of Pencil Graphite Electrode with Poly(DPASA-co-VP)-RuO2NPs and its Application for the Trace Analysis of Sumatriptan","authors":"Mansoureh Lalei, Kobra Zarei","doi":"10.1007/s11664-024-11509-8","DOIUrl":"10.1007/s11664-024-11509-8","url":null,"abstract":"<div><p>A straightforward and one-step modification of the pencil graphite electrode was performed using co-polymerization of diphenyl amine-4-sulfonic acid (DPASA) sodium salt, and 4-vinylpyridine (VP), and also simultaneous formation of ruthenium dioxide nanoparticles (poly(DPASA-co-VP)-RuO<sub>2</sub> NPs/PGE). The subsequent step involved the application of the altered electrode to examine the quantity of sumatriptan by employing a highly sensitive adsorptive differential pulse voltammetric method. The modified electrode was thoroughly characterized through the utilization of cyclic voltammetry (CV), field-emission scanning electron microscopy (FESEM), and electrochemical impedance spectroscopy (EIS). Under optimized conditions, the concentration of sumatriptan was determined within two linear ranges: 1.0–50.0 nM and 50.0–5000.0 nM, with a detection limit of 0.03 nM. Ultimately, the suggested approach was employed to gauge the sumatriptan content in tablet and urine samples, revealing that this method possesses the requisite levels of accuracy and precision.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"251 - 261"},"PeriodicalIF":2.2,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preparation and Properties of High-Temperature Transient Thin-Film Thermopile Heat Flux Sensor 高温瞬态薄膜热电堆热流传感器的制备与性能研究

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-09 DOI: 10.1007/s11664-024-11476-0

Shanghang Xie, Jin Zhu, Hongchuan Jiang, Xiaohui Zhao, Baorui Liu, Zhouxia Jia

{"title":"Preparation and Properties of High-Temperature Transient Thin-Film Thermopile Heat Flux Sensor","authors":"Shanghang Xie, Jin Zhu, Hongchuan Jiang, Xiaohui Zhao, Baorui Liu, Zhouxia Jia","doi":"10.1007/s11664-024-11476-0","DOIUrl":"10.1007/s11664-024-11476-0","url":null,"abstract":"<div><p>The thermopile of the sensor consists of 192 pairs of Pt-PtRh10 thermocouples with length 1 mm and width 100 <i>μ</i>m in serpentine series were deposited on Al<sub>2</sub>O<sub>3</sub> ceramic substrates by a photolithography coating process. The thermal resistance layers with the proposed low thermal conductivity feature a meshed cavity structure, with four thermal resistance layers spaced over the thermopile contacts to enhance the sensitivity of the sensor. Calibration of the sensor’s sensitivity was performed by a flat-plate radiative heat flux device, while its response time was measured by a pulsed laser. Finally, the sensor’s performance in an actual application environment was simulated using a wind tunnel. The results showed that the thin-film heat flux sensor can operate in environments ranging from 200°C to 1500°C, with a sensitivity of 0.03067 m<sup>2</sup> <i>μ</i>V/W, the maximum relative error was 8.5% with an average response time of 12.7 <i>μ</i>s. The sample exhibited stable performance during wind tunnel testing, responding quickly to changes in heat flux.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"361 - 369"},"PeriodicalIF":2.2,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Optimization of a Piezoelectric Acoustic Sensor for Fluid Leak Detection Applications 用于流体泄漏检测的压电声传感器的设计与优化

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-08 DOI: 10.1007/s11664-024-11504-z

Mohini Sawane, Mahanth Prasad, Rajesh Kumar

{"title":"Design and Optimization of a Piezoelectric Acoustic Sensor for Fluid Leak Detection Applications","authors":"Mohini Sawane, Mahanth Prasad, Rajesh Kumar","doi":"10.1007/s11664-024-11504-z","DOIUrl":"10.1007/s11664-024-11504-z","url":null,"abstract":"<div><p>Pipeline leaks are known to frequently occur in chemical processing and urban gas pipes, which can lead to equipment damage, explosions, and potentially serious injuries. A design of a piezoelectric acoustic sensor for fluid leak detection is proposed in this work. The low-frequency acoustic leak signals that travel through the fluid in a pipeline can be detected using a piezoelectric acoustic sensor. The design and simulation of sensor is done using COMSOL Multiphysics software. The sensor specification is used to guide the choice of materials and optimization of geometry. The simulated results show the characteristics of transient response using a nondestructive detection approach at various leakage rates. The recommended detection method's ability to detect leak signals with tolerable accuracy is shown through simulated results. The designed sensor can be used for both long-term leak monitoring and short-term safety evaluations. The simulated sensitivity of 191 µV/m at 27.46 kHz resonance frequency is achieved by optimizing device design. The maximum deflection at the center is 2.37 nm. The total electric energy generated at 1 N of force and 5 Hz frequency is 8 nJ.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"123 - 128"},"PeriodicalIF":2.2,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Mn Doping on the Morphological and Optical Properties of Ba0.92Sr0.08Ti1-xMnxO3 Materials for Microwave Device Applications 掺杂锰对用于微波器件的 Ba0.92Sr0.08Ti1-xMnxO3 材料的形态和光学特性的影响

IF 2.2 4区工程技术

Journal of Electronic Materials Pub Date : 2024-10-07 DOI: 10.1007/s11664-024-11418-w

Mikanshi Chaudhary, Sheela Devi, Sukhdeep Kaur, Shilpi Jindal

{"title":"Effect of Mn Doping on the Morphological and Optical Properties of Ba0.92Sr0.08Ti1-xMnxO3 Materials for Microwave Device Applications","authors":"Mikanshi Chaudhary, Sheela Devi, Sukhdeep Kaur, Shilpi Jindal","doi":"10.1007/s11664-024-11418-w","DOIUrl":"10.1007/s11664-024-11418-w","url":null,"abstract":"<div><p>In this work, we investigated the impact of Mn substitution on the morphological, structural, and optical properties of barium strontium titanate (BST) with the formula Ba<sub>0.92</sub>Sr<sub>0.08</sub>Ti<sub>1−<i>x</i></sub>Mn<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0.00, 0.10, 0.20) fabricated using the solid-state reaction technique. The morphological and structural properties were studied using scanning electron microscopy (SEM) and x-ray diffraction (XRD). The optical properties of the samples were analyzed using photoluminescence (PL), Fourier transform infrared (FTIR), and Raman spectroscopy. SEM micrographs displayed nearly spherical grains. The phase formation, lattice structure, crystallite size (<i>D</i>), strain (<i>ε</i>), and dislocation density (<i>δ</i>) of the Mn-doped BST ceramics were examined from the recorded XRD patterns using the Scherrer and Williamson–Hall (W–H) models, which showed that the crystallite size increased and the lattice strain and dislocation density decreased with increasing doping concentrations. FTIR results for the pristine sample of BST revealed that the absorption peak at a wavenumber of 470 cm<sup>−1</sup> was shifted to 1250 cm<sup>−1</sup> for Mn-doped BST concentrations. The Raman results indicated that the number of modes decreased with the increase in the Mn<sup>2+</sup> concentrations. PL spectra showed an emission band centered at 60–659 nm, indicating redshift behavior. The analysis using XRD, SEM, FTIR, and Raman spectroscopy revealed that the concentration <i>x</i> = 0.20 is appropriate for use in microwave devices and other electro-optical applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"66 - 75"},"PeriodicalIF":2.2,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0