Correlation Between Structural, Electrical, and Optical Properties of ZnO:In for Ethanol Gas Sensing Application

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-10-16 DOI:10.1007/s11664-024-11508-9

Fatemeh Montazeri Davoodi, Seyed Mohammad Rozati, Sahar Soltani

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Abstract

Indium-doped zinc oxide (ZnO:In) thin films were prepared using the spray pyrolysis technique, and the effects of indium concentration on the structural, optical, electrical, and sensing properties of the ZnO:In films were investigated. The indium concentration was varied between 0 wt.% and 15 wt.%. The results show a polycrystalline structure for all layers using x-ray diffraction. The lowest sheet resistance of approximately 120 Ω/□ was achieved with an indium concentration of 5 wt.% in the starting solution. The morphological properties of the thin films were investigated using field-emission scanning electron microscopy. The results indicate that an increase in the indium concentration disrupts the nano-granular structure of the surface, the surface becomes wrinkled, and a snowflake-like pattern is formed on the surface of the thin film. The ethanol sensing properties of the samples were studied using an electric circuit. Sensing parameters including the dynamic response, sensitivity, and response/recovery times of the samples were investigated. For an ethanol concentration of 200 ppm, the gas response of the pure ZnO layer was about 1.05. An increase in the indium concentration to 15 wt.% was found to improve the gas response of the samples. For an ethanol concentration of 200 ppm, the gas response of the ZnO:In (15 wt.%) layer increased to 1.82.

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利用喷雾热解技术制备了掺铟氧化锌（ZnO:In）薄膜，并研究了铟浓度对 ZnO:In 薄膜的结构、光学、电学和传感特性的影响。铟的浓度在 0 wt.% 到 15 wt.% 之间变化。X 射线衍射结果表明，所有层均为多晶结构。起始溶液中的铟浓度为 5 wt.%时，薄膜电阻最低，约为 120 Ω/□。使用场发射扫描电子显微镜研究了薄膜的形态特性。结果表明，铟浓度的增加会破坏薄膜表面的纳米粒状结构，使表面起皱，并在薄膜表面形成雪花状图案。利用电路研究了样品的乙醇传感特性。研究了样品的传感参数，包括动态响应、灵敏度和响应/恢复时间。乙醇浓度为 200 ppm 时，纯氧化锌层的气体响应约为 1.05。将铟的浓度提高到 15 wt.%后，发现样品的气体响应有所改善。乙醇浓度为 200 ppm 时，ZnO:In（15 wt.%）层的气体响应上升到 1.82。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.