Journal of Electronic Materials最新文献

{"title":"2D Nb-based MXenes Properties, Synthesis, and Applications as Supercapacitors and Gas Sensors","authors":"Anuprava Mandal,&nbsp;Soumen Pandit","doi":"10.1007/s11664-026-12766-5","DOIUrl":"10.1007/s11664-026-12766-5","url":null,"abstract":"<div><p>Early transition metal carbides and/or nitrides form Nb (niobium)-based MXenes, which are now among the most versatile two-dimensional materials. In a variety of scientific applications, such as sensors and energy storage, MXenes have gained popularity due to their high metallic conductivity, tunable surface chemistry, rich surface functional groups, large specific surface area, layered structure, good redox capabilities, hydrophilicity, high energy storage ability, layered structure for ion intercalations, and other exceptional properties. This paper examines the latest developments of Nb-based MXenes in gas sensors and supercapacitors (SCs), applying the different synthesis methods and properties of MXenes. Furthermore, this paper highlights how MXenes' exceptional properties have driven their growing popularity across a range of scientific applications, including energy storage devices and sensor design. The different MXenes-based electrodes as a part of SCs and gas sensors are also highlighted in this review with a focus on their practical applications and capacitive properties such as specific capacitance, cyclic stability, energy and power densities, and other gas sensing performance features like temperature, response rate, and recovery rate at different humidities.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4005 - 4024"},"PeriodicalIF":2.5,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Regulation of the Optoelectronic Properties of Monolayer PtS2 by Nonmetal Doping and Strain: A First-Principles Study","authors":"Hangqing Wu,&nbsp;Lu Yang,&nbsp;Liqun Wu","doi":"10.1007/s11664-026-12778-1","DOIUrl":"10.1007/s11664-026-12778-1","url":null,"abstract":"<div><p>Based on first-principles calculations, we investigate the effects of nonmetal dopants (C, N, O, and F) and external strain on the electronic and optical properties of monolayer PtS₂. The calculated formation energies indicate that C substitution is the most energetically favorable among the considered dopants. All four doped configurations remain indirect-gap semiconductors with bandgaps ranging from 0.300 eV to 1.639 eV. Under both biaxial and shear strain, the bandgap decreases monotonically, accompanied by notable modification of the band dispersion, implying strain-sensitive electronic-structure tunability. The bandgap response is anisotropic with respect to the strain type: tensile biaxial strain produces the weakest modulation, whereas compressive biaxial strain induces the most pronounced reduction. Notably, when the shear strain along the <i>x–y</i> direction reaches 8%, the static dielectric constant increases by 36.9% and the maximum reflectance increases by 20% compared with the pristine monolayer. Moreover, under 8% biaxial compressive strain, the absorption peak increases by 12.53% relative to the pristine structure, suggesting enhanced optical response.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4431 - 4446"},"PeriodicalIF":2.5,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring Near-Infrared Emission and Optical Properties of Er3+Activated Na2BiMg2(VO4)3 Phosphors: Synthesis, Characterization, and Potential NIR Applications","authors":"Rashmi V. Pandey,&nbsp;Halim S. Ahamad,&nbsp;Supriya Kshetrapal,&nbsp;Nilesh Ugemuge","doi":"10.1007/s11664-026-12753-w","DOIUrl":"10.1007/s11664-026-12753-w","url":null,"abstract":"<div><p>A series of Er³⁺-doped Na₂BiMg₂(VO₄)₃ phosphor materials, abbreviated as NBMVO, were synthesized via the conventional solid-state reaction method and investigated for their near-infrared (NIR) luminescence properties. Samples with varying Er³⁺ concentrations (1 mol%, 2 mol%, 5 mol%, and 7 mol%) were characterized using structural and optical techniques. Under 524 nm excitation, all compositions exhibited strong and stable NIR emission centered at 1536 nm, corresponding to the ⁴I_13/2 → ⁴I_15/2 transition of Er³⁺ ions. The findings demonstrated efficient NIR emission with good structural integrity and photoluminescence stability across different doping levels. Na₂BiMg₂(VO₄)₃:Er³⁺ is a potential phosphor material for optical communication, biomedical imaging, and advanced photonic devices, such as C-band telecommunication and eye-safe laser technologies.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4634 - 4646"},"PeriodicalIF":2.5,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural Modification of Monolayer Graphene Induced by Atomic Layer Deposition of Al2O3 Dielectric","authors":"Dhammika Rathnayaka,&nbsp;Riya Sharma,&nbsp;Eesha Razia,&nbsp;Kisaru Upananda,&nbsp;Prachanda Bhurtel,&nbsp;Bidur Dahal,&nbsp;Rameshwor Poudel,&nbsp;U. Kushan Wijewardena,&nbsp;Annika Kriisa,&nbsp;Rasanga Samaraweera,&nbsp;Ramesh G. Mani","doi":"10.1007/s11664-026-12745-w","DOIUrl":"10.1007/s11664-026-12745-w","url":null,"abstract":"<div><p>The exceptional electrical and mechanical properties of graphene make it a leading candidate for advanced electronic and sensing applications; however, its integration into functional devices often requires high-<span>(kappa )</span> dielectric layers, such as aluminum oxide (<span>(hbox {Al}_2hbox {O}_{3})</span>). Atomic layer deposition (ALD) is a promising technique for growing such dielectric films due to the excellent thickness control and good uniformity that can be achieved. Despite these benefits, ALD-based <span>(hbox {Al}_2hbox {O}_{3})</span> deposition on graphene can unintentionally degrade the quality of the graphene by introducing strain, doping, or defects during the deposition process. Understanding how these effects vary with the early-stage thickness of the dielectric layer is essential for optimizing device performance. This study presents a systematic investigation of the structural modification induced in monolayer graphene as a function of ALD-deposited <span>(hbox {Al}_2hbox {O}_{3})</span> dielectric thickness. A mechanically exfoliated single-layer graphene sample was transferred onto Si/<span>(hbox {SiO}_{2})</span> substrates and subsequently coated with <span>(hbox {Al}_{2}hbox {O}_{3})</span> films of varying thicknesses. <span>(hbox {Al}_{2}hbox {O}_{3})</span> deposition was carried out via direct <span>(hbox {H}_2hbox {O})</span>-based ALD at 120°C, without any surface pretreatment, to avoid initial damage to the graphene prior to the start of <span>(hbox {Al}_{2}hbox {O}_{3})</span> deposition. Damage to graphene during the deposition process was analyzed by varying the film thickness of <span>(hbox {Al}_{2}hbox {O}_{3})</span>, and Raman spectroscopy performed at each stage of sample preparation made it possible to evaluate the impact of the <span>(hbox {Al}_{2}hbox {O}_{3})</span> coating on the graphene layer. This work reveals that defect, strain, and doping dynamics at the Si/<span>(hbox {SiO}_{2})</span>/<span>(hbox {Al}_{2}hbox {O}_{3})</span>/graphene interface are strongly influenced by early-stage dielectric thickness, offering an effective strategy to minimize damage and preserve graphene’s intrinsic properties—an essential step toward the development of high-performance graphene-based electronic devices.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4335 - 4346"},"PeriodicalIF":2.5,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Innovations in GaN HEMT Fabrication for Enhanced High-Frequency Performance: A Review","authors":"Md. Sifatul Muktadir,&nbsp;Md. Akram Ahmad,&nbsp;Bhubon Chandra Mech","doi":"10.1007/s11664-026-12695-3","DOIUrl":"10.1007/s11664-026-12695-3","url":null,"abstract":"<div><p>Devices capable of handling high power and high frequency simultaneously are of great use in various future applications such as space, defense, and wireless power transmission. Wideband gap materials such as gallium nitride (GaN) have high electron mobility and greater thermal stability, making them a prominent candidate for these applications. In this paper, we extensively reviewed some state-of-the-art works that successfully designed and fabricated GaN-based high-frequency devices. The principal objective of this study is to highlight the pivotal factors that are responsible for hindering high-frequency applications. Moreover, we have demonstrated the novel techniques and fabrication processes adopted by the researchers to overcome these problems for enhancing the cut-off frequency (<i>f</i>_t) and the maximum frequency (<i>f</i>_max) at optimal gain (in dB) and power-added efficiency (PAE). This study also encompasses a systematic discussion on every factor that directly contributes to the high-frequency application and also portrays the current technologies available in the market, adopted by renowned foundries.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"3987 - 4004"},"PeriodicalIF":2.5,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and Characterization of Orange–Red Luminescent Ba3Lu4O9:Sm3+ Nanomaterials","authors":"Aarti Khatkar,&nbsp;Avni Khatkar,&nbsp;Dinesh Kumar,&nbsp;Rajesh Kumar,&nbsp;Suman Lata","doi":"10.1007/s11664-026-12677-5","DOIUrl":"10.1007/s11664-026-12677-5","url":null,"abstract":"<p>In this work, orange–red Ba₃Lu₄O₉:Sm³⁺ (1–5 mol.%) nanomaterials were synthesized via a cost-effective solution combustion route at 1100°C. Rietveld analysis revealed a rhombohedral crystal structure for the Ba₃Lu_3.88Sm_0.12O₉ nanophosphor. The rhombohedral morphology with a particle size between 65 nm and 75 nm was obtained via field-emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) analysis. Energy-dispersive spectroscopy (EDS) revealed the presence of barium, lutetium, samarium, and oxygen in the doped sample. A bandgap value of 4.9 eV was found for the host, while a bandgap of 5.58 eV was found for the Ba₃Lu_3.88Sm_0.12O₉ composition, determined from diffuse reflectance spectroscopy (DRS). The excitation spectra exhibit excitation peaks attributable to Sm³⁺ ions, with the most intense peak at a wavelength of 408 nm, whereas the emission spectra provide bright orange–red luminescence due to a prominent peak at 603 nm, attributed to a ⁴G_5/2 → ⁶H_7/2 transition. The critical separation and photoluminescence (PL) intensity per dopant ion concentration was determined to investigate the concentration quenching (CQ) phenomenon. The findings suggest that beyond 3 mol.% concentration, the CQ behavior is primarily governed by dipole–dipole (d–d) interactions. The decay curve analysis indicated a mono-exponential nature, with lifetime ranging from 0.8876 ms to 0.7005 ms. The color purity of the complexes ranges from 69% to 77%. Finally, the CIE coordinates confirm the emergence of orange–red emission, characteristic of the material under near-ultraviolet (UV) irradiation, and correlated color temperature (CCT; 1970–2070 K) analysis confirmed the warm nature of the emitted light suitable for RGB-based phosphor-converted white light-emitting diode (pc-WLED) applications.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4619 - 4633"},"PeriodicalIF":2.5,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Organic Light Emitting Diodes: Material to Applications","authors":"Aruna Tomar,&nbsp;Kanchan Sharma,&nbsp;Brijesh Kumar","doi":"10.1007/s11664-026-12715-2","DOIUrl":"10.1007/s11664-026-12715-2","url":null,"abstract":"<div><p>Organic light emitting diodes (OLEDs) are evolving as nontraditional electronic devices owing to their mechanical flexibility, high visual quality, quick activation speed, and efficiency at low voltages and across wide temperature ranges. OLEDs have become widely used for display and lighting applications; however, they are now being used as sensors light sources, and light detectors for biomedical applications and early detection of disease. Advances in OLED design, architecture, device technology, and synthesis fabrication techniques have allowed for improvements in performance, durability, and utility. The article describes the various OLED design architectures, the individual layer function, and the individual layer materials responsible for charge conduction, exciton formation, and light emission. In addition, advances in fabrication processes, efficiency improvements, and life extensions of OLEDs have been identified, with consideration of future applications of OLEDs in organic thin film transistors, integrated optical sensors, and medical devices. Taken together, these perspectives present the current status of OLED devices, materials, and engineering techniques as well as future developments for OLEDs.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"3945 - 3986"},"PeriodicalIF":2.5,"publicationDate":"2026-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MOF-Assisted Synthesis of Hierarchically Porous ZIF-67-Derived Co3O4 Nanosheets Enabling High Specific Capacitance and Long-Cycle Stability for High-Current-Density Supercapacitors","authors":"M. B. S. Pravin,&nbsp;Wajiah Mazhar,&nbsp;Awatif Alshamari,&nbsp;Zahra Bayhan,&nbsp;Nithyadharseni Palaniyandy,&nbsp;A. Raza,&nbsp;R. Senthilkumar,&nbsp;Aseel Smerat","doi":"10.1007/s11664-026-12744-x","DOIUrl":"10.1007/s11664-026-12744-x","url":null,"abstract":"<div><p>Herein, ZIF-67 was used as a cobalt-based metal–organic framework precursor to obtain Co₃O₄ nanosheets due to its uniform cobalt-imidazolate framework and its ability to form porous structures upon thermal decomposition. The ZIF-67-derived Co₃O₄ nanosheets were synthesized by a hydrothermal method followed by a calcination process. The ZIF-67-derived Co₃O₄ nanosheets presented pore sizes of 20 nm, 28 nm, and 139 nm and a surface area of 315 m² g⁻¹. The porous nanostructure resulted in a high specific capacitance of 350 F g⁻¹ at 5 A g⁻¹. Cyclic voltammetry (CV) and galvanostatic charge–discharge (GCD) analysis confirmed the electrochemical activity and charge-storage behavior of the material. The charge-transfer resistance is negligible, as indicated by the very small semicircle in the electrochemical impedance spectroscopy plots, confirming high electrical conductivity before and after 5000 cycles. The Co₃O₄ nanosheet-based electrode material exhibits 95% capacitance retention after 5000 cycles. The redox reactions in the Co₃O₄ electrode material are dominated by ion diffusion because the b value is close to 0.5, as confirmed by power law calculations. The charge-storage process is dominated (92%) by diffusion, whereas only 8% of the charges are stored by surface processes when analyzed at 50 mV s⁻¹. The asymmetric device exhibits a capacitance of 156 F g⁻¹ at 1 A g⁻¹, maximum energy density of 63 Wh kg⁻¹, maximum power density of 12750 W kg⁻¹, and 95% cyclic stability after 10,000 cycles. The diffusive and capacitive processes contribute significantly to maximizing charge storage in the Co₃O₄ electrode material for battery-type supercapacitive devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4186 - 4201"},"PeriodicalIF":2.5,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-026-12744-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bifunctional Organic–Inorganic Hybrid Interphase for Long-Term Cycling Stability of Zinc Anodes","authors":"Xinyu Zhang,&nbsp;Yanduo Xia,&nbsp;Yuhui Lu,&nbsp;Haixia Liu,&nbsp;Da Lou","doi":"10.1007/s11664-026-12754-9","DOIUrl":"10.1007/s11664-026-12754-9","url":null,"abstract":"<div><p>The development of aqueous zinc-ion batteries (AZIBs) is significantly hampered by dendrite growth and parasitic side reactions on the zinc anode. To address these challenges simultaneously, we propose sodium 2,3-dimercapto-1-propanesulfonate (DMPS) as a novel electrolyte additive. The sulfhydryl (–SH) groups in DMPS react with zinc to form robust Zn–S bonds, constructing a high-strength inorganic framework within the solid electrolyte interphase (SEI). Concurrently, the sulfonate (–SO₃⁻) groups enhance interfacial wettability, optimize ion transport, and reduce impedance. These dual functions synergistically create a stable, highly ion-conductive organic–inorganic hybrid protective layer on the zinc surface. This interphase effectively guides uniform zinc deposition and suppresses water-induced corrosion. Consequently, Zn//Cu cells demonstrate an average coulombic efficiency of 99.37% over 2500 cycles. Furthermore, Zn//Zn symmetric cells achieve an extended cycling lifespan exceeding 3200 h at 1 mA cm⁻².</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4175 - 4185"},"PeriodicalIF":2.5,"publicationDate":"2026-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrogen Storage and Energy Applications of H6X2N3Na (X = K; Rb): AIMD and First-Principles Study Approach","authors":"Hamza Errahoui,&nbsp;Mohamed Karouchi,&nbsp;Abdelkebir Ejjabli,&nbsp;Abdelmounaim Laassouli,&nbsp;Aymane EL Haji,&nbsp;Youssef Lachtioui,&nbsp;Omar Bajjou","doi":"10.1007/s11664-026-12736-x","DOIUrl":"10.1007/s11664-026-12736-x","url":null,"abstract":"<div><p>This study assesses the structural, electronic, optical, and thermal stability of the hydride compounds H₆K₂N₃Na and H₆Rb₂N₃Na using density functional theory (DFT) calculations and <i>ab initio</i> molecular dynamics (AIMD) simulations. Both materials were found to be dynamically and mechanically stable after optimization of their tetragonal structures (space group P4₂/m). The AIMD simulations provided additional evidence that the compounds are thermally stable up to approximately room temperature, indicating that they are robust materials suitable for pragmatic applications. The electronic band structure calculations showed semiconducting response (indicating electronic transmission with bandgaps over the visible region of the spectrum), suggesting the usefulness of the materials for optoelectronic and photocatalytic applications. The optical properties illustrate complete solid absorption in the ultraviolet region with moderate visible light absorption that is consistent with applications for light harvesting. The evaluation of hydrogen sorption properties illustrates an H/M ratio of 2.0 for both materials, with gravimetric hydrogen contents of 1.95 wt.% H₆K₂N₃Na and 1.03 wt.% H₆Rb₂N₃Na suggesting that the potassium-based hydride has interesting hydrogen sorption properties. Consequently, the research presented in this article makes a case for H₆K₂N₃Na as a potential multifunctional material for further consideration for applications in clean energy and optoelectronic devices.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"55 5","pages":"4415 - 4430"},"PeriodicalIF":2.5,"publicationDate":"2026-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147636878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}