Journal of Electronic Materials最新文献

{"title":"Effect of Growth Temperature on the Structural, Morphological, and Magnetic Properties of Sputtered Ni Thin Film","authors":"Prashant Kumar,&nbsp;Ravi Kumar,&nbsp;Vipul Sharma,&nbsp;Manoj Kumar Khanna,&nbsp;Bijoy Kumar Kuanr","doi":"10.1007/s11664-024-11512-z","DOIUrl":"10.1007/s11664-024-11512-z","url":null,"abstract":"<div><p>In this work, nickel thin film with thickness of 35 nm was grown by radio frequency sputtering on a Si/SiO₂ substrate as a function of growth temperature from 100°C to 350°C. The effect of substrate temperature during film growth was extensively investigated with regard to the structural, morphological, and dynamic magnetic properties of the grown films. The films were polycrystalline with a face-centered cubic (FCC) structure, as evident from the different diffraction peaks. The saturation magnetization (<i>M</i>_S) was greatest and coercivity (<i>H</i>_C) was observed to be lowest for films grown at 250°C. The Gilbert damping (<span>({alpha }_{{rm eff}})</span>) and effective magnetization (<span>({M}_{{rm eff}})</span>) as a function of growth temperature were obtained from microwave-induced ferromagnetic resonance (FMR) spectroscopy measurements. <span>({alpha }_{{rm eff}})</span> derived from FMR line widths, which is an important parameter for quantifying ferromagnetic film quality, was lowest at 250°C and increased on either side of this point. The lowest damping at 250°C indicates low strain and defect density at this temperature, which is also evident from x-ray diffraction (XRD) data. <span>({M}_{{rm eff}})</span> also increased and reached a maximum at 250°C growth temperature. The decrease in magnetization below and above 250°C indicates diffusion and formation of a magnetic dead layer at the substrate–film interface. These measurements reveal that a narrow growth temperature regime exists for the growth of Ni thin film to obtain films with low defects, and hence low Gilbert damping, which can be utilized in spintronics device applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"164 - 171"},"PeriodicalIF":2.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the Electronic, Magnetic, Optical, and Thermoelectric Properties of Mn3Si2Te6 by Using the Strain Effect: A DFT Study","authors":"Y. Saeed,&nbsp;Huda A. Alburaih,&nbsp;M. Musa Saad Hasb Elkhalig,&nbsp;M. Usman Saeed,&nbsp;Sardar Mohsin Ali,&nbsp;Zeeshan Ali,&nbsp;Fahad Ali Khan,&nbsp;Uzair Khan,&nbsp;Ahmad Razzaq,&nbsp;Aziz-Ur-Rahim Bacha","doi":"10.1007/s11664-024-11532-9","DOIUrl":"10.1007/s11664-024-11532-9","url":null,"abstract":"<div><p>We performed first-principles calculations to investigate the structural, electronic, magnetic, optical, and thermoelectric properties of Mn₃Si₂Te₆ (MST) at various temperatures using the BoltzTraP package. From the experimental analysis, the material exhibited a metallic nature due to zero bandgap. After performing density functional theory calculations by applying strain engineering on the MST compound, we discovered that the material was a half-metal. The thermoelectric characteristics of the MST compound under strain engineering were investigated using WIEN2k code. The results demonstrated that at 5% tensile strain engineering, the material was half-metal, with an indirect bandgap of 0.732 eV at the <i>Γ</i>–K symmetry point of the Brillouin zone with the generalized gradient approximation (GGA). It was discovered that compressive strain reduced the bandgap whereas tensile strain increased the bandgap value of the bulk MST. With the use of the hybrid functional (GGA + modified Becke–Johnson [mBJ] potential) at 4% tensile strain, the highest bandgap of 1.24 eV at <i>Γ</i>–K was obtained. The optical characteristics at 4% tensile strain were calculated with the hybrid functional. Finally, the thermoelectric properties of MST were determined, including the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit at 4% tensile strain from 300 K to 800 K. It was found that the Seebeck coefficient and electrical conductivity of MST are temperature-sensitive and decrease as the temperature rises. The Seebeck coefficient was measured at a temperature of 300 K for 4% strain, obtaining values of 300 µV/<i>K</i> (<i>p</i>-type) and 310 µV/<i>K</i> (<i>n</i>-type) region. The lattice thermal conductivity (LTC) was calculated with increasing temperature for MST from 8 W/mK at 100 K to 2 W/mK at 600 K, for 0–10 GPa. The calculated dimensionless figure of merit, <i>ZT</i>, at 300 K reached 0.72 for both <i>p</i>- and <i>n</i>-type, which decreased to 0.56 with experimental thermal conductivity. These results indicate that MST could be suitable material for use in future thermoelectric devices.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"403 - 412"},"PeriodicalIF":2.2,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Investigation on Thermoluminescence Properties of C6+ Ion Beam-Irradiated K2Ca2(SO4)3:Eu,Cu","authors":"Chirag Malik","doi":"10.1007/s11664-024-11549-0","DOIUrl":"10.1007/s11664-024-11549-0","url":null,"abstract":"<div><p>Potassium calcium sulfate (K₂Ca₂(SO₄)₃:Eu,Cu) co-doped with Eu²⁺ and Cu²⁺ (1000 ppm each) has been prepared by the co-precipitation method. Compound confirmation was carried out by X ray diffraction, and the average crystallite size was 61 nm, calculated by the Williamson–Hall plot method. The presence of dopants was confirmed by the photoluminescence emissions and excitation spectra. This nano-crystalline phosphor has been investigated for its dosimetric applications by studying its thermoluminescence (TL) properties after being irradiated with ion beams (C⁶⁺) at different fluences of different energies (65 MeV, 75 MeV, and 85 MeV). Also, the co-doped phosphor was compared with the singly-doped K₂Ca₂(SO₄)₃:Eu in terms of its TL intensities, and it showed a higher TL sensitivity. Moreover, it showed a good dose response only for a low-energy C⁶⁺ ion beam.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"151 - 163"},"PeriodicalIF":2.2,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Nanosized Al2O3 Dispersion on the Structural and Electrochemical Properties of PMMA/TEGDME-Based Mg-Ion Conducting Polymer Gel Electrolyte","authors":"Poonam,&nbsp;Suman B. Kuhar,&nbsp;Maitri Patel,&nbsp;C. Maheshwaran,&nbsp;Kuldeep Mishra,&nbsp;D. K. Kanchan,&nbsp;A. Annalakshmi,&nbsp;Naveen K. Acharya,&nbsp;Deepak Kumar","doi":"10.1007/s11664-024-11511-0","DOIUrl":"10.1007/s11664-024-11511-0","url":null,"abstract":"<div><p>A poly(methylmethacrylate)-based Mg-ion conducting polymer gel electrolyte immobilizing a liquid electrolyte of magnesium perchlorate in tetraethylene glycol dimethyl ether (TEGDME) solvent is presented. In order to enhance the electrolytic properties of the electrolyte, the impact of aluminum oxide (Al₂O₃) nanoparticles on the structural, thermal, and electrochemical properties has been investigated. The optimized composition of the polymer gel electrolyte (PMMA + TEGDME + MgClO₄ + 2.5 wt% Al₂O₃) showed increased ionic conductivity of 4.94 × 10⁻⁵ S cm⁻¹ with a significantly low activation energy of 0.18 eV. Ion dynamics in the polymer gel electrolyte have been quantitatively analyzed by investigating various frequency-dependent parameters such as the real and imaginary components of dielectric permittivity, loss tangent, and the modulus. The possible conformational changes in the electrolyte system on addition of Al₂O₃ nanoparticles have been investigated by x-ray diffraction (XRD), Fourier-transform infrared (FTIR) analysis, and differential scanning calorimetry (DSC). These studies have revealed CH₃-Mg-Al₂O₃ interaction in the electrolyte with significantly affected crystallinity and sufficient gel phase range with variation in temperature.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"141 - 150"},"PeriodicalIF":2.2,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of Sensor Morphology and Sensing Performance in a Non-enzymatic Graphene FET Biosensor for Detection of Biomolecules in Complex Analytes","authors":"V. N. Senthil Kumaran,&nbsp;M. Venkatesh,&nbsp;Abdulrahman Saad Alqahtani,&nbsp;Azath Mubarakali,&nbsp;P. Parthasarathy","doi":"10.1007/s11664-024-11531-w","DOIUrl":"10.1007/s11664-024-11531-w","url":null,"abstract":"<div><p>Recent advances in ultrasensitive electrical biosensors using graphene nanostructures such as nanowalls and nanopores have increased the surface area-to-volume ratio. These structures provide signals at low biomolecule concentrations that are generally insufficient for vital measurements, especially in complex physiological analytes, making practical deployment difficult. A new, reproducible, and scalable chemical technique for constructing smooth graphene nanogrids enables molar biomolecule detection in field-effect transistor (FET) mode. We examine how pore morphology affects the sensing capability of label-free graphene nanoporous FET biosensors, aiming for sub-femtomolar detection limits with a good signal-to-noise ratio (SNR) in blood or urine serum. Despite problems including drain–source current sensitivity overlap due to high quantities of nonspecific antigens, our improved graphene nanogrid sensor detected hepatitis B (Hep-B) surface antigen in serum at sub-femtomolar levels. In serum containing 3 nM hepatitis C (Hep-C) as a nonspecific antigen, a pore diameter of 30 nm and length of 120 nm had the highest SNR and detected 0.25 fM Hep-B. We used a graphene nanogrid FET biosensor in heterodyne mode (80 kHz to 2 MHz) to quantify Hep-B down to 0.3 fM in blood using a probabilistic neural network (PNN) to reduce Debye screening effects. The performance of the PNN exceeded that of the polynomial fit and static neural network models by limiting quantification errors to 10%. Electrical resistance was linearly related to the Hep-C virus core antigen (HCVcAg) concentration (80–550 pg/mL) in real-time tests. After improvement of functionalization parameters, the SNR increased 70%, detecting 0.20 fM Hep-B virus molecules with 60% sensitivity and 6% standard deviation.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"285 - 299"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High Thermoelectric Performance of a Novel Layered Structure CdSbX3 (X = S and Se)","authors":"Marwa Haouam,&nbsp;Ali Hamidani,&nbsp;Nor Rebah,&nbsp;Kamel Zanat","doi":"10.1007/s11664-024-11510-1","DOIUrl":"10.1007/s11664-024-11510-1","url":null,"abstract":"<div><p>In this work, based on first-principles calculations and Boltzmann transport theory, we have investigated the structural, electronic, mechanical, and thermoelectric properties of <span>(hbox {CdSbS}_{3})</span> and <span>(hbox {CdSbSe}_{3})</span> compounds, which are two novel members of the <span>(hbox {MAX}_{3})</span> family. We found that these compounds are semiconductors with a narrow band gap. In addition, they are both mechanically, dynamically, and thermodynamically stable. The results show that their interlayer distances are wider than almost all transition metal dichalcogenide compounds. Furthermore, we report that the lattice thermal conductivity,<span>(kappa _{text{l}})</span>, at room temperature for <span>(hbox {CdSbS}_{3})</span> is 0.53 W m⁻¹ K⁻¹ and 0.13 W m⁻¹ K⁻¹ for <span>(hbox {CdSbSe}_{3})</span>. This latter value is similar to that of <span>(hbox {ZnPSe}_{3})</span>, which was found to be lower than all other 2D materials. More remarkably, the thermoelectric figure of merit of <span>(hbox {CdSbS}_{3})</span> reaches as high as 2.34 at 1400 K and 2.68 for <span>(hbox {CdSbSe}_{3})</span> at 850 K, which is a record high value at this temperature.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"389 - 402"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ni Ion-Induced Optical, Structural, and Electrical Properties of Polyaniline/Polyvinyl Chloride Composites","authors":"Saloni Sharma,&nbsp;Kanchan L. Singh,&nbsp;Mukesh Kumar,&nbsp;Rajesh Kumar,&nbsp;Sangeeta Prasher","doi":"10.1007/s11664-024-11516-9","DOIUrl":"10.1007/s11664-024-11516-9","url":null,"abstract":"<div><p>Thin films of polyaniline/polyvinyl chloride (PANI/PVC) composites synthesized and irradiated with a nickel ion (Ni⁷⁺) beam using flux of 3.125<span>(times)</span>10⁹ particles/cm²/s and fluence ranging between 3<span>(times)</span>10¹¹ and 1<span>(times)</span>10¹³ particles/cm² were investigated with respect to their optical, structural, and electrical properties. The photoluminescence (PL) analysis showed that swift heavy ion (SHI) irradiation caused the creation of new color centers, which were diminished at greater fluence. With irradiation, both the direct and indirect band gaps decreased, making the materials more conducive to conduction. However, the direct band gap was smaller than the indirect band gap. Fourier transform infrared (FTIR) analysis showed that the aromatic nature of PANI was not disturbed by SHI irradiation. The variation in capacitance with frequency indicated that the material can be used for electromagnetic interference (EMI) shielding, and the shielding properties are modified by ion irradiation. Scanning electron microscopy (SEM) analysis revealed that irradiation of the polymer with Ni⁷⁺ leads to chain scissoring and cluster formation, whereas at higher fluence, smaller parts are rearranged to form micro-clusters.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"129 - 140"},"PeriodicalIF":2.2,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"n-Type AlCuFeMn Medium-Entropy Alloy with Reduced Thermal Conductivity: A Prospective Thermoelectric Material","authors":"Palash Swarnakar,&nbsp;Abhigyan Ojha,&nbsp;Partha Sarathi De,&nbsp;Sivaiah Bathula,&nbsp;Amritendu Roy","doi":"10.1007/s11664-024-11518-7","DOIUrl":"10.1007/s11664-024-11518-7","url":null,"abstract":"<div><p>Developing affordable thermoelectric (TE) materials is critical for efficient waste heat recovery in industries. With the goal of developing novel, affordable TE materials, the present experimental–theoretical investigation, for the first time, presents a rigorous analysis of the electrical and thermal transport properties of a multi-principal-component AlCuFeMn alloy (MPCA). TE properties related to electronic transport, including the Seebeck coefficient, electrical conductivity, and thermal conductivity, were measured on a vacuum-cast sample and were computed using semi-classical Boltzmann transport theory. Additionally, ab initio calculations were performed to calculate the lattice thermal conductivity. The alloy demonstrated overall thermal conductivity of &lt; 4 W/mK, comparable to conventional thermoelectric materials, while the computed lattice thermal conductivity was &lt; 1 W/mK. Such low thermal conductivity may be attributed to the complex microstructure as well as the uniform distribution of aluminium in the matrix. The power factor of the alloy, however, was small (&lt; 0.1 mW/mK²), translating to a low figure of merit (<i>ZT</i> ~ 0.01). Our study indicates that composition engineering can potentially improve the power factor and thus the overall TE response in an AlCuFeMn alloy.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"378 - 388"},"PeriodicalIF":2.2,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural Evolution, Piezoelectric and Ferroelectric Properties of (1−x)Bi4Ti3O12-xCaBi2Nb2O9 High-Temperature Composite Ceramics","authors":"Zhipeng Zhang,&nbsp;Zong-Yang Shen,&nbsp;Zhumei Wang,&nbsp;Tao Zeng,&nbsp;Wenqin Luo,&nbsp;Fusheng Song,&nbsp;Yueming Li","doi":"10.1007/s11664-024-11527-6","DOIUrl":"10.1007/s11664-024-11527-6","url":null,"abstract":"<div><p>High leakage current density and relatively low piezoelectric activity have become one of the main obstacles to expanding the practical application of Bi₄Ti₃O₁₂ (BIT) high-temperature piezoelectric ceramics. Although ion doping can improve electrical resistivity and piezoelectric response, it often lowers the Curie temperature. In this work, by introducing CaBi₂Nb₂O₉ (CBN) with higher Curie temperature to BIT, a composite ceramic (1−<i>x</i>)BIT-<i>x</i>CBN was designed, and the effect of CBN content on the structure and electrical properties of the ceramics was investigated. With the increase in the <i>x</i> value, the intensity of the highest peak (117) gradually decreased until disappearing, while the intensity of peak (115) gradually increased, and the X-ray diffraction (XRD) refinement results showed that some non-stoichiometric compounds, Bi_1.74Ti₂O_6.624 and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉, were produced. The sheet-like grains were effectively suppressed, while the granular grains became prominent with high CBN doping content, which should contribute to improving the electrical resistivity of ceramics. The optimal electrical properties were obtained in 0.8BIT-0.2CBN composite ceramics as follows: the piezoelectric coefficient <i>d</i>₃₃ = 13.8 pC/N, the Curie temperature <i>T</i>_C = 765°C, and the electrical resistivity ρ_dc = 8.52 × 10⁵ Ω·cm (@ 500°C). In addition, the <i>d</i>₃₃ maintained 89.1% of the initial value after annealing at 550°C, showing good thermal stability for high-temperature sensing applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"370 - 377"},"PeriodicalIF":2.2,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlation Between Structural, Electrical, and Optical Properties of ZnO:In for Ethanol Gas Sensing Application","authors":"Fatemeh Montazeri Davoodi,&nbsp;Seyed Mohammad Rozati,&nbsp;Sahar Soltani","doi":"10.1007/s11664-024-11508-9","DOIUrl":"10.1007/s11664-024-11508-9","url":null,"abstract":"<div><p>Indium-doped zinc oxide (ZnO:In) thin films were prepared using the spray pyrolysis technique, and the effects of indium concentration on the structural, optical, electrical, and sensing properties of the ZnO:In films were investigated. The indium concentration was varied between 0 wt.% and 15 wt.%. The results show a polycrystalline structure for all layers using x-ray diffraction. The lowest sheet resistance of approximately 120 Ω/□ was achieved with an indium concentration of 5 wt.% in the starting solution. The morphological properties of the thin films were investigated using field-emission scanning electron microscopy. The results indicate that an increase in the indium concentration disrupts the nano-granular structure of the surface, the surface becomes wrinkled, and a snowflake-like pattern is formed on the surface of the thin film. The ethanol sensing properties of the samples were studied using an electric circuit. Sensing parameters including the dynamic response, sensitivity, and response/recovery times of the samples were investigated. For an ethanol concentration of 200 ppm, the gas response of the pure ZnO layer was about 1.05. An increase in the indium concentration to 15 wt.% was found to improve the gas response of the samples. For an ethanol concentration of 200 ppm, the gas response of the ZnO:In (15 wt.%) layer increased to 1.82.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"273 - 284"},"PeriodicalIF":2.2,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}