Journal of Electronic Materials最新文献

{"title":"Enhancement of the Seebeck Coefficient by Energy Filtering in Mixed-Phase Cu2−xS Films at Room Temperature","authors":"Lahoucine Amiri,&nbsp;Ahmad Alsaad,&nbsp;Abdelfattah Narjis,&nbsp;Chi-Te Liang,&nbsp;Abdellah Tihane,&nbsp;Said Elmassi,&nbsp;Lahcen Nkhaili","doi":"10.1007/s11664-024-11553-4","DOIUrl":"10.1007/s11664-024-11553-4","url":null,"abstract":"<div><p>In this work, we present and report on the evolution of thermoelectric properties altered through changes in the energy barrier height in thermally evaporated mixed-phase copper sulfide thin films. The physical interpretations depend on the conception of degenerate energy levels near the top of the valence band. The energy barrier at grain boundaries was highlighted and assumed to be the origin of the rapid evolution of the conductivity and Seebeck coefficient of the film annealed at 723 K. The position of the energy levels of the active carriers with respect to the Fermi energy reinforces the effect of annealing temperature on the Seebeck coefficient and electrical conductivity and was observed to transform the system from a system with fully ionized impurities to a system with impurities that are not fully ionized, which enhances the barrier height. The evolution of the Seebeck coefficient is explained in terms of thermal activation. The sample annealed at 623 K exhibited the lowest barrier height of 32 meV, with an activation energy of 111 meV. The sample annealed at 673 K had a barrier height of 46 meV with an activation energy of 136 meV. Finally, the sample annealed at 723 K exhibited a barrier height of 103 meV, which explains its relatively high room-temperature Seebeck coefficient, with a pronounced effect of temperature.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"426 - 431"},"PeriodicalIF":2.2,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rationalization of Microstructure Modulation and Doping on the Enhancement Mechanism of Thermoelectric Properties of PEDOT:PSS","authors":"Li Feng,&nbsp;Fen Wang,&nbsp;Hongjie Luo,&nbsp;Jianfeng Zhu,&nbsp;Yi Qin","doi":"10.1007/s11664-024-11567-y","DOIUrl":"10.1007/s11664-024-11567-y","url":null,"abstract":"<div><p>As wearable electronic devices advance, there is a growing demand for stand-alone flexible thermoelectric materials and devices capable of harvesting low-grade thermal energy from human skin. The polar molecule DMSO is known to enhance the electrical properties of PEDOT, with the underlying mechanism believed to involve structural changes in PEDOT that improve carrier mobility, although carrier concentration has a more pronounced effect on conductivity. In this study, we examined the impact of varying DMSO concentrations on PEDOT. With the optimal addition of DMSO (10 vol.%), PSS and PEDOT were effectively separated, resulting in parallel lamellar microstructures that improved the continuity of the conductive network. Hall effect measurements showed significant increases in both carrier concentration and mobility. The PEDOT⁺ polaritons were arranged parallel to the lamellar structure, facilitating rapid charge transport along the molecular chains. This arrangement led to enhanced three-dimensional charge transfer, increased π-π conjugate stacking between microstructural layers, and a greater electron cloud density. The synergistic effect of these changes resulted in a three-fold increase in film conductivity. Additionally, lightly doping PEDOT with DMSO led to a 35% increase in the Seebeck coefficient with rising operating temperatures. The resulting free-standing, flexible films, characterized by low thermal conductivity and high electrical conductivity, are well-suited for use in miniature flexible sensors or wearable electronic devices.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"413 - 425"},"PeriodicalIF":2.2,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Energy Storage and Electrocaloric Properties in Sm3+- and Fe3+-Substituted BCZT Ceramics","authors":"Neha,&nbsp;Parveen Kumar,&nbsp;Vidushi Karol,&nbsp;Preeti Sharma,&nbsp;Surjeet Chahal,&nbsp;Chandra Prakash","doi":"10.1007/s11664-024-11543-6","DOIUrl":"10.1007/s11664-024-11543-6","url":null,"abstract":"<div><p>Polycrystalline ceramics with the composition 0.45BaTi_0.80Zr_0.20O₃-0.55Ba_0.69Ca_0.30Sm_0.01Ti_0.99Fe_0.01O₃ were prepared using the solid-state reaction route. The phase formation of the prepared sample was confirmed by x-ray diffraction (XRD) study. The temperature-dependent dielectric permittivity (<i>ε</i>) showed a diffuse phase transition. The observance of ferroelectricity at temperatures above the Curie temperature (<i>T</i>_C) suggests the presence of nano-polar regions in the sample. The efficiency (<i>ƞ</i>), recoverable energy density (<i>W</i>_rec), and loss (<i>W</i>_loss) were determined from the <i>P</i>–<i>E</i> loops. The efficiency (<i>ƞ</i>) increased with an increase in temperature, while <i>W</i>_loss showed a reverse trend. The measured value of <i>W</i>_rec was 0.10 J/cm³, and a value of 94% was found for <i>ƞ</i>. The electrocaloric effect (ECE) was studied using the indirect method, and an adiabatic change in temperature (Δ<i>T</i>) of 0.34 K was found at 25 kV/cm with an electrocaloric coefficient = 0.0136 K cm kV⁻¹. These results suggest that this composition can be used in energy storage and electrocaloric applications.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"59 - 65"},"PeriodicalIF":2.2,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic Dye Degradation with Magnetically Recoverable and Reusable Bismuth Ferrite Nanoparticles","authors":"Kokkiligadda Jhansi,&nbsp;Parasuraman Swaminathan","doi":"10.1007/s11664-024-11574-z","DOIUrl":"10.1007/s11664-024-11574-z","url":null,"abstract":"<div><p>Photocatalytic degradation is vital to combat water pollution, utilizing sunlight to degrade organic contaminants. Bismuth ferrite (BFO), a multiferroic, is particularly effective as a photocatalyst as it can be magnetically recovered and reused. This study presents a comprehensive investigation into the photocatalytic degradation of organic dyes using BFO nanoparticles (NPs) synthesized through a sol–gel method. Degradation studies are conducted under different pH conditions (neutral, acidic, or basic) and using both cationic (methylene blue and malachite green) and anionic (methyl orange and Congo red) dyes under controlled photocatalytic conditions. Our findings reveal that cationic dyes show enhanced degradation in basic conditions, whereas anionic dyes are more effectively degraded in acidic conditions. The BFO NPs are magnetically recovered from the solution with approximately 98% efficiency and subsequently reused for dye degradation. This study demonstrates the potential of BFO NPs in photocatalytic applications paving the way for future research towards environmental clean-up.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"485 - 498"},"PeriodicalIF":2.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Swift Heavy Ion Beam Irradiation on Optical, Structural, and Surface Morphological Properties of WO3 Thin Films Grown by RF Sputtering Method","authors":"Deepika,&nbsp;Deepika Gupta,&nbsp;Vishnu Chauhan,&nbsp;Satyendra Kumar,&nbsp;Paramjit Singh,&nbsp;S. K. Sharma,&nbsp;Shalendra Kumar,&nbsp;Rajesh Kumar","doi":"10.1007/s11664-024-11565-0","DOIUrl":"10.1007/s11664-024-11565-0","url":null,"abstract":"<div><p>WO₃ is considered to be significant for diverse applications such as gas sensing, photocatalysis, and photovoltaic devices because of its wide optical band gap. Ion beam treatment of various metal oxides produces defects that modify various properties including the morphological, structural, and optical properties of the metal oxides. When the energetic ions cross through the target materials, two kinds of energy losses occur, i.e., nuclear and electronic energy loss. In high-energy ion beam treatment of thin films, electronic energy loss is dominant over nuclear energy loss. In our current study, thin films of tungsten oxide were grown on a substrate of glass and silicon by the radio frequency (RF) sputtering method. The sputtered WO₃ thin films were exposed to an ion beam of Ag ion with an energy of 120 MeV at various fluence levels of 1.0 × 10¹² ions/cm², 5 × 10¹² ions/cm², and 1.0 × 10¹³ ions/cm². Optical study revealed changes in the energy band gap of ion-irradiated WO₃ thin films. From Raman spectroscopy, the phase observed was monoclinic for pristine and irradiated samples. PL spectroscopy of the pristine and ion beam-implanted WO₃ thin films showed emission spectra at a wavelength 437 nm with an excitation wavelength of 420 nm. X-ray photoelectron spectroscopy showed the presence of W and O atoms and showed changes in the electronic structure after Ag ion beam irradiation.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"220 - 231"},"PeriodicalIF":2.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and Characterization of PS/PVP Polymer Blend Composites with Different Nanofillers for Production of Green Hydrogen","authors":"Vaishali Suthar,&nbsp;Harsh D. Patel,&nbsp;Anwesh Patel,&nbsp;Naveen K. Acharya,&nbsp;C. N. Murthy","doi":"10.1007/s11664-024-11563-2","DOIUrl":"10.1007/s11664-024-11563-2","url":null,"abstract":"<div><p>This paper reports a study of composite blends of polysulfone (PS) and polyvinylpyrrolidone (PVP) that were prepared in different wt% composition using carbon nanotubes (CNT), milled carbon fibers (MCF), graphene oxide (GO), and chopped carbon fibers (CCF) as nanofillers. The permeability measurements of the composites showed that the PS/PVP blends with different nanofillers demonstrated higher permeability for hydrogen gas than that of the pristine polymers, either singly or the polymer blend. The gases used for the permeation measurements were H₂, CO₂, N₂, O₂, and CH₄. Selectivity was calculated for H₂/CO₂, H₂/N₂, and H₂/CH₄ gas pairs. The results of the selectivity were plotted to show Robeson's 2008 upper bound and compared with reported data. The permeability of all gases increased for modified composite polymer membranes. We noted that O₂ gas solubility follows a trend similar to other gases, but gives a higher value than H₂ gas. The selectivity measurements showed that the MCF and CCF composite with the PS/PVP blend membranes demonstrated the highest selectivity for hydrogen gas among all different gas pairs. This indicates that PS/PVP composite membranes with MCF and CCF can be used for hydrogen purification and production of green hydrogen. There is a trade-off between permeability and selectivity parameters; GO and CNT nanofillers showed constant selectivity as permeability increased, which can be explained by the nanogap theory. The structural and morphological properties of these prepared composite membranes were characterized by field-emission scanning electron microscopy (FE-SEM), thermal properties by differential scanning calorimetry (DSC), and mechanical properties using a universal testing machine (UTM) for tensile strength, and Fourier transform infrared (FTIR) spectroscopy was carried out to identify the possible bond between polymers and nanofillers of the blend composite membranes. Blends modified with CNT, MCF, and GO exhibited increased viscosity, with an increase in the ∆b value at increasing concentrations, suggesting a favorable interaction between the phases. The water flux studies indicated that the highest pure water flux was obtained by the PS + PVP + CCF membrane. The highest rejection of Na₂SO₄ and of MgSO₄ was for the PS + PVP + CNT membrane.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"205 - 219"},"PeriodicalIF":2.2,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects","authors":"Deepika Gupta,&nbsp;Sonica Upadhyay,&nbsp;Abhimanyu Singh Rana,&nbsp;Satyendra Kumar,&nbsp; Deepika,&nbsp;Aniket Bharti,&nbsp;Vivek Kumar Malik,&nbsp;Sanjay Kumar Sharma,&nbsp;Manoj Kumar Khanna,&nbsp;Rajesh Kumar","doi":"10.1007/s11664-024-11533-8","DOIUrl":"10.1007/s11664-024-11533-8","url":null,"abstract":"<div><p>Molybdenum disulfide (MoS₂) has been found to be a promising material for electronic and optoelectronic device applications due to its unique optical and electrical characteristics. However, the large-scale synthesis of MoS₂ thin films is limited by challenges in achieving reproducible and uniform device fabrication. In the present study, we utilized a sputtering technique and post-treatment by ion beam irradiation for large-scale fabrication of uniform MoS₂ thin films. The effects of the low-energy ion beam on the optical, structural, electrical transport, and morphological characteristics of the MoS₂ thin films were studied by Raman spectroscopy, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, and electrical transport analysis. Tuning the electrical and optical characteristics of few- and monolayer MoS₂ through regulation of defects provides an excellent approach for fabricating two-dimensional (2D) MoS₂ thin films for electronic device applications. Thin film transistors (TFTs) have been widely studied for driving active-matrix displays given their promising electrical characteristics including significant on/off current ratio and mobility. In the present work, we report a back-gate MoS₂ TFT fabricated by sputtering. TFTs based on MoS₂ thin films were fabricated, and the current–voltage characteristics were studied at room temperature, which confirmed that the transport behavior differed between the pristine and ion-irradiated samples. Pristine MoS₂-based TFTs displayed significant Schottky barrier effects, resulting in lower mobility than ion-irradiated samples. Our comprehensive study focuses on the fundamental transport characteristics via the metal–MoS₂interface, which represents a substantial step towards achieving highly efficient electronic devices based on 2D semiconductors.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"191 - 204"},"PeriodicalIF":2.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On-Current Improvement in Bulk-Accumulated Double-Gate ZnO TFT","authors":"Saurabh Jaiswal,&nbsp;Divya Dubey,&nbsp;Shilpi Singh,&nbsp;Rupam Goswami,&nbsp;Manish Goswami,&nbsp;Kavindra Kandpal","doi":"10.1007/s11664-024-11569-w","DOIUrl":"10.1007/s11664-024-11569-w","url":null,"abstract":"<div><p>Channel thickness is a key parameter in determining the electrical characteristics of double-gate ZnO thin film transistors (DGTFTs). In thicker channels, the accumulation region is confined to the ZnO/SiO₂ (semiconductor/gate dielectric) interface. However, in such devices with ultrathin channels, the accumulation region extends the entire depth of the channel. This work investigates the impact of channel thickness on the electrical characteristics of a double-gate ZnO TFT in the grounded top gate (GTG) and common mode gate (CMG) biasing modes. Gaussian distributed traps are assumed to be present at the ZnO/SiO₂ interface with a peak concentration of 10¹² cm⁻² eV⁻¹ to accurately represent the interface. From technology computer-aided design simulations, it is concluded that in CMG mode, a bulk-accumulated 5-nm-thick DGTFT shows a 15- fold improvement in ON current as compared to its GTG counterpart. However, a 500-nm-thick DGTFT CMG mode shows merely twofold improvement in ON current compared to GTG mode.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"51 - 58"},"PeriodicalIF":2.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving ZnO Thin Film with CuO Nanorods to Enhance the Application in Lower-Work-Temperature Carbon Monoxide Gas Sensing","authors":"Yen-Sheng Lin,&nbsp;Yi-Zhe Zhang","doi":"10.1007/s11664-024-11564-1","DOIUrl":"10.1007/s11664-024-11564-1","url":null,"abstract":"<div><p>In this study, radio frequency (RF) magnetron sputtering was used to deposit ZnO nanofilms and CuO nanorods. Firstly, the sputtering power was adjusted to study the structural porosity changes of ZnO. The oxygen flux and etching power were then adjusted to roughen the surface of the films to induce the optimal distribution of the CuO nanorods on the surface to increase its surface area for gas reaction. The ZnO film packaging process for gas sensing was also completed, mainly by a self-designed gas sensing circuit, at a lower work temperature of 100°C, to conduct sensitivity and response value analysis of CO gas sensing. In addition, X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were used to analyze the crystallinity and morphology of ZnO, and high-resolution transmission electron microscopy (HRTEM) was used to analyze the interface microstructure of the ZnO/CuO nanorods. The absorbance of ZnO was measured by UV–Vis spectroscopy to indirectly verify the porosity. The results show that after depositing the ZnO film at 200 W, followed by roughening the surface with oxygen flux of 15 sccm and 100 W etching power for 10 min and then depositing the CuO nanorods for 10 s, the completed thin film structure had better CO sensing characteristics, and the highest response value was enhanced about 5% from 0.983 to 1.031. By optimizing the process parameters and incorporating the CuO nanorods, the sensing characteristics of the ZnO thin film were improved and a lower work temperature of 100°C for CO gas reaction was possible.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"310 - 320"},"PeriodicalIF":2.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-024-11564-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of the Combination of Indoline and Naphthalimide in the Preparation of Photosensitizers for Photovoltaic Devices","authors":"Mozhgan Hosseinnezhad,&nbsp;Sohrab Nasiri,&nbsp;Venkatramaiah Nutalapati,&nbsp;Kamaladin Gharanjig,&nbsp;Amirmasoud Arabi","doi":"10.1007/s11664-024-11538-3","DOIUrl":"10.1007/s11664-024-11538-3","url":null,"abstract":"<div><p>Four dyes with substitutions of carbazole and phenothiazine in position C4 of naphthalimide were designed in conjugation as a donor–acceptor architecture (D–A). The absorption and emission characteristics of the prepared dyes were investigated in H₂O, dimethylformamide (DMF), and their mixture (DMF:H₂O = 1:1). The prepared dyes exhibited a pink and yellow color, with strong emission at λ_em = 526–590 nm due to charge transfer, with a positive solvatochromic effect. The feasibility of electron transfer in the dye-sensitized solar cell (DSSC) structure and energy levels were evaluated using electrochemical and density functional theory (DFT), which confirmed the use of dyes in the DSSC structure. The DSSCs were prepared using an individual strategy, and their optical properties were investigated under light of AM 1.5. The DSSCs based on dyes 1–4 achieved efficiency of 4.37%, 4.59%, 4.11%, and 4.27%, respectively. Therefore, the power efficiency increased by about 39% in the presence of the phenothiazine group.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"473 - 484"},"PeriodicalIF":2.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}