Journal of Electronic Materials最新文献

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Photocatalytic Dye Degradation with Magnetically Recoverable and Reusable Bismuth Ferrite Nanoparticles 磁性可回收和可重复使用的铁酸铋纳米颗粒光催化降解染料
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-09 DOI: 10.1007/s11664-024-11574-z
Kokkiligadda Jhansi, Parasuraman Swaminathan
{"title":"Photocatalytic Dye Degradation with Magnetically Recoverable and Reusable Bismuth Ferrite Nanoparticles","authors":"Kokkiligadda Jhansi,&nbsp;Parasuraman Swaminathan","doi":"10.1007/s11664-024-11574-z","DOIUrl":"10.1007/s11664-024-11574-z","url":null,"abstract":"<div><p>Photocatalytic degradation is vital to combat water pollution, utilizing sunlight to degrade organic contaminants. Bismuth ferrite (BFO), a multiferroic, is particularly effective as a photocatalyst as it can be magnetically recovered and reused. This study presents a comprehensive investigation into the photocatalytic degradation of organic dyes using BFO nanoparticles (NPs) synthesized through a sol–gel method. Degradation studies are conducted under different pH conditions (neutral, acidic, or basic) and using both cationic (methylene blue and malachite green) and anionic (methyl orange and Congo red) dyes under controlled photocatalytic conditions. Our findings reveal that cationic dyes show enhanced degradation in basic conditions, whereas anionic dyes are more effectively degraded in acidic conditions. The BFO NPs are magnetically recovered from the solution with approximately 98% efficiency and subsequently reused for dye degradation. This study demonstrates the potential of BFO NPs in photocatalytic applications paving the way for future research towards environmental clean-up.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"485 - 498"},"PeriodicalIF":2.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Swift Heavy Ion Beam Irradiation on Optical, Structural, and Surface Morphological Properties of WO3 Thin Films Grown by RF Sputtering Method 快速重离子束辐照对射频溅射法制备WO3薄膜光学、结构和表面形貌的影响
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-09 DOI: 10.1007/s11664-024-11565-0
Deepika, Deepika Gupta, Vishnu Chauhan, Satyendra Kumar, Paramjit Singh, S. K. Sharma, Shalendra Kumar, Rajesh Kumar
{"title":"Influence of Swift Heavy Ion Beam Irradiation on Optical, Structural, and Surface Morphological Properties of WO3 Thin Films Grown by RF Sputtering Method","authors":"Deepika,&nbsp;Deepika Gupta,&nbsp;Vishnu Chauhan,&nbsp;Satyendra Kumar,&nbsp;Paramjit Singh,&nbsp;S. K. Sharma,&nbsp;Shalendra Kumar,&nbsp;Rajesh Kumar","doi":"10.1007/s11664-024-11565-0","DOIUrl":"10.1007/s11664-024-11565-0","url":null,"abstract":"<div><p>WO<sub>3</sub> is considered to be significant for diverse applications such as gas sensing, photocatalysis, and photovoltaic devices because of its wide optical band gap. Ion beam treatment of various metal oxides produces defects that modify various properties including the morphological, structural, and optical properties of the metal oxides. When the energetic ions cross through the target materials, two kinds of energy losses occur, i.e., nuclear and electronic energy loss. In high-energy ion beam treatment of thin films, electronic energy loss is dominant over nuclear energy loss. In our current study, thin films of tungsten oxide were grown on a substrate of glass and silicon by the radio frequency (RF) sputtering method. The sputtered WO<sub>3</sub> thin films were exposed to an ion beam of Ag ion with an energy of 120 MeV at various fluence levels of 1.0 × 10<sup>12</sup> ions/cm<sup>2</sup>, 5 × 10<sup>12</sup> ions/cm<sup>2</sup>, and 1.0 × 10<sup>13</sup> ions/cm<sup>2</sup>. Optical study revealed changes in the energy band gap of ion-irradiated WO<sub>3</sub> thin films. From Raman spectroscopy, the phase observed was monoclinic for pristine and irradiated samples. PL spectroscopy of the pristine and ion beam-implanted WO<sub>3</sub> thin films showed emission spectra at a wavelength 437 nm with an excitation wavelength of 420 nm. X-ray photoelectron spectroscopy showed the presence of W and O atoms and showed changes in the electronic structure after Ag ion beam irradiation.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"220 - 231"},"PeriodicalIF":2.2,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and Characterization of PS/PVP Polymer Blend Composites with Different Nanofillers for Production of Green Hydrogen 不同纳米填料PS/PVP聚合物共混复合材料的合成与表征
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-08 DOI: 10.1007/s11664-024-11563-2
Vaishali Suthar, Harsh D. Patel, Anwesh Patel, Naveen K. Acharya, C. N. Murthy
{"title":"Synthesis and Characterization of PS/PVP Polymer Blend Composites with Different Nanofillers for Production of Green Hydrogen","authors":"Vaishali Suthar,&nbsp;Harsh D. Patel,&nbsp;Anwesh Patel,&nbsp;Naveen K. Acharya,&nbsp;C. N. Murthy","doi":"10.1007/s11664-024-11563-2","DOIUrl":"10.1007/s11664-024-11563-2","url":null,"abstract":"<div><p>This paper reports a study of composite blends of polysulfone (PS) and polyvinylpyrrolidone (PVP) that were prepared in different wt% composition using carbon nanotubes (CNT), milled carbon fibers (MCF), graphene oxide (GO), and chopped carbon fibers (CCF) as nanofillers. The permeability measurements of the composites showed that the PS/PVP blends with different nanofillers demonstrated higher permeability for hydrogen gas than that of the pristine polymers, either singly or the polymer blend. The gases used for the permeation measurements were H<sub>2</sub>, CO<sub>2</sub>, N<sub>2</sub>, O<sub>2</sub>, and CH<sub>4</sub>. Selectivity was calculated for H<sub>2</sub>/CO<sub>2</sub>, H<sub>2</sub>/N<sub>2</sub>, and H<sub>2</sub>/CH<sub>4</sub> gas pairs. The results of the selectivity were plotted to show Robeson's 2008 upper bound and compared with reported data. The permeability of all gases increased for modified composite polymer membranes. We noted that O<sub>2</sub> gas solubility follows a trend similar to other gases, but gives a higher value than H<sub>2</sub> gas. The selectivity measurements showed that the MCF and CCF composite with the PS/PVP blend membranes demonstrated the highest selectivity for hydrogen gas among all different gas pairs. This indicates that PS/PVP composite membranes with MCF and CCF can be used for hydrogen purification and production of green hydrogen. There is a trade-off between permeability and selectivity parameters; GO and CNT nanofillers showed constant selectivity as permeability increased, which can be explained by the nanogap theory. The structural and morphological properties of these prepared composite membranes were characterized by field-emission scanning electron microscopy (FE-SEM), thermal properties by differential scanning calorimetry (DSC), and mechanical properties using a universal testing machine (UTM) for tensile strength, and Fourier transform infrared (FTIR) spectroscopy was carried out to identify the possible bond between polymers and nanofillers of the blend composite membranes. Blends modified with CNT, MCF, and GO exhibited increased viscosity, with an increase in the ∆b value at increasing concentrations, suggesting a favorable interaction between the phases. The water flux studies indicated that the highest pure water flux was obtained by the PS + PVP + CCF membrane. The highest rejection of Na<sub>2</sub>SO<sub>4</sub> and of MgSO<sub>4</sub> was for the PS + PVP + CNT membrane.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"205 - 219"},"PeriodicalIF":2.2,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects 通过 Kr 离子束产生的表面缺陷增强 MoS2 薄膜晶体管的迁移率
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-07 DOI: 10.1007/s11664-024-11533-8
Deepika Gupta, Sonica Upadhyay, Abhimanyu Singh Rana, Satyendra Kumar,  Deepika, Aniket Bharti, Vivek Kumar Malik, Sanjay Kumar Sharma, Manoj Kumar Khanna, Rajesh Kumar
{"title":"Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects","authors":"Deepika Gupta,&nbsp;Sonica Upadhyay,&nbsp;Abhimanyu Singh Rana,&nbsp;Satyendra Kumar,&nbsp; Deepika,&nbsp;Aniket Bharti,&nbsp;Vivek Kumar Malik,&nbsp;Sanjay Kumar Sharma,&nbsp;Manoj Kumar Khanna,&nbsp;Rajesh Kumar","doi":"10.1007/s11664-024-11533-8","DOIUrl":"10.1007/s11664-024-11533-8","url":null,"abstract":"<div><p>Molybdenum disulfide (MoS<sub>2</sub>) has been found to be a promising material for electronic and optoelectronic device applications due to its unique optical and electrical characteristics. However, the large-scale synthesis of MoS<sub>2</sub> thin films is limited by challenges in achieving reproducible and uniform device fabrication. In the present study, we utilized a sputtering technique and post-treatment by ion beam irradiation for large-scale fabrication of uniform MoS<sub>2</sub> thin films. The effects of the low-energy ion beam on the optical, structural, electrical transport, and morphological characteristics of the MoS<sub>2</sub> thin films were studied by Raman spectroscopy, atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectroscopy, and electrical transport analysis. Tuning the electrical and optical characteristics of few- and monolayer MoS<sub>2</sub> through regulation of defects provides an excellent approach for fabricating two-dimensional (2D) MoS<sub>2</sub> thin films for electronic device applications. Thin film transistors (TFTs) have been widely studied for driving active-matrix displays given their promising electrical characteristics including significant on/off current ratio and mobility. In the present work, we report a back-gate MoS<sub>2</sub> TFT fabricated by sputtering. TFTs based on MoS<sub>2</sub> thin films were fabricated, and the current–voltage characteristics were studied at room temperature, which confirmed that the transport behavior differed between the pristine and ion-irradiated samples. Pristine MoS<sub>2</sub>-based TFTs displayed significant Schottky barrier effects, resulting in lower mobility than ion-irradiated samples. Our comprehensive study focuses on the fundamental transport characteristics via the metal–MoS<sub>2</sub>interface, which represents a substantial step towards achieving highly efficient electronic devices based on 2D semiconductors.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"191 - 204"},"PeriodicalIF":2.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On-Current Improvement in Bulk-Accumulated Double-Gate ZnO TFT 提高块状累积双栅氧化锌 TFT 的导通电流
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-07 DOI: 10.1007/s11664-024-11569-w
Saurabh Jaiswal, Divya Dubey, Shilpi Singh, Rupam Goswami, Manish Goswami, Kavindra Kandpal
{"title":"On-Current Improvement in Bulk-Accumulated Double-Gate ZnO TFT","authors":"Saurabh Jaiswal,&nbsp;Divya Dubey,&nbsp;Shilpi Singh,&nbsp;Rupam Goswami,&nbsp;Manish Goswami,&nbsp;Kavindra Kandpal","doi":"10.1007/s11664-024-11569-w","DOIUrl":"10.1007/s11664-024-11569-w","url":null,"abstract":"<div><p>Channel thickness is a key parameter in determining the electrical characteristics of double-gate ZnO thin film transistors (DGTFTs). In thicker channels, the accumulation region is confined to the ZnO/SiO<sub>2</sub> (semiconductor/gate dielectric) interface. However, in such devices with ultrathin channels, the accumulation region extends the entire depth of the channel. This work investigates the impact of channel thickness on the electrical characteristics of a double-gate ZnO TFT in the grounded top gate (GTG) and common mode gate (CMG) biasing modes. Gaussian distributed traps are assumed to be present at the ZnO/SiO<sub>2</sub> interface with a peak concentration of 10<sup>12</sup> cm<sup>−2</sup> eV<sup>−1</sup> to accurately represent the interface. From technology computer-aided design simulations, it is concluded that in CMG mode, a bulk-accumulated 5-nm-thick DGTFT shows a 15- fold improvement in ON current as compared to its GTG counterpart. However, a 500-nm-thick DGTFT CMG mode shows merely twofold improvement in ON current compared to GTG mode.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"51 - 58"},"PeriodicalIF":2.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving ZnO Thin Film with CuO Nanorods to Enhance the Application in Lower-Work-Temperature Carbon Monoxide Gas Sensing 用氧化铜纳米棒改进ZnO薄膜以增强在低工作温度一氧化碳气体传感中的应用
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-07 DOI: 10.1007/s11664-024-11564-1
Yen-Sheng Lin, Yi-Zhe Zhang
{"title":"Improving ZnO Thin Film with CuO Nanorods to Enhance the Application in Lower-Work-Temperature Carbon Monoxide Gas Sensing","authors":"Yen-Sheng Lin,&nbsp;Yi-Zhe Zhang","doi":"10.1007/s11664-024-11564-1","DOIUrl":"10.1007/s11664-024-11564-1","url":null,"abstract":"<div><p>In this study, radio frequency (RF) magnetron sputtering was used to deposit ZnO nanofilms and CuO nanorods. Firstly, the sputtering power was adjusted to study the structural porosity changes of ZnO. The oxygen flux and etching power were then adjusted to roughen the surface of the films to induce the optimal distribution of the CuO nanorods on the surface to increase its surface area for gas reaction. The ZnO film packaging process for gas sensing was also completed, mainly by a self-designed gas sensing circuit, at a lower work temperature of 100°C, to conduct sensitivity and response value analysis of CO gas sensing. In addition, X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM) were used to analyze the crystallinity and morphology of ZnO, and high-resolution transmission electron microscopy (HRTEM) was used to analyze the interface microstructure of the ZnO/CuO nanorods. The absorbance of ZnO was measured by UV–Vis spectroscopy to indirectly verify the porosity. The results show that after depositing the ZnO film at 200 W, followed by roughening the surface with oxygen flux of 15 sccm and 100 W etching power for 10 min and then depositing the CuO nanorods for 10 s, the completed thin film structure had better CO sensing characteristics, and the highest response value was enhanced about 5% from 0.983 to 1.031. By optimizing the process parameters and incorporating the CuO nanorods, the sensing characteristics of the ZnO thin film were improved and a lower work temperature of 100°C for CO gas reaction was possible.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"310 - 320"},"PeriodicalIF":2.2,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11664-024-11564-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Combination of Indoline and Naphthalimide in the Preparation of Photosensitizers for Photovoltaic Devices 吲哚啉与萘酰亚胺复合制备光伏器件光敏剂的研究
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-04 DOI: 10.1007/s11664-024-11538-3
Mozhgan Hosseinnezhad, Sohrab Nasiri, Venkatramaiah Nutalapati, Kamaladin Gharanjig, Amirmasoud Arabi
{"title":"Investigation of the Combination of Indoline and Naphthalimide in the Preparation of Photosensitizers for Photovoltaic Devices","authors":"Mozhgan Hosseinnezhad,&nbsp;Sohrab Nasiri,&nbsp;Venkatramaiah Nutalapati,&nbsp;Kamaladin Gharanjig,&nbsp;Amirmasoud Arabi","doi":"10.1007/s11664-024-11538-3","DOIUrl":"10.1007/s11664-024-11538-3","url":null,"abstract":"<div><p>Four dyes with substitutions of carbazole and phenothiazine in position C4 of naphthalimide were designed in conjugation as a donor–acceptor architecture (D–A). The absorption and emission characteristics of the prepared dyes were investigated in H<sub>2</sub>O, dimethylformamide (DMF), and their mixture (DMF:H<sub>2</sub>O = 1:1). The prepared dyes exhibited a pink and yellow color, with strong emission at λ<sub>em</sub> = 526–590 nm due to charge transfer, with a positive solvatochromic effect. The feasibility of electron transfer in the dye-sensitized solar cell (DSSC) structure and energy levels were evaluated using electrochemical and density functional theory (DFT), which confirmed the use of dyes in the DSSC structure. The DSSCs were prepared using an individual strategy, and their optical properties were investigated under light of AM 1.5. The DSSCs based on dyes 1–4 achieved efficiency of 4.37%, 4.59%, 4.11%, and 4.27%, respectively. Therefore, the power efficiency increased by about 39% in the presence of the phenothiazine group.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"473 - 484"},"PeriodicalIF":2.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring Electrolyte-Induced Phenomena in Graphene Nanoplatelet-Based Electrodes 石墨烯纳米薄片电极中电解质诱导现象的研究
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-04 DOI: 10.1007/s11664-024-11359-4
Muhammad Oneeb, Javed Iqbal, Asifa Mumtaz, Muhammad Ameen, Marhaba Noor, Hamza Nawaz, Haider Ali, M. Usama Jansher
{"title":"Exploring Electrolyte-Induced Phenomena in Graphene Nanoplatelet-Based Electrodes","authors":"Muhammad Oneeb,&nbsp;Javed Iqbal,&nbsp;Asifa Mumtaz,&nbsp;Muhammad Ameen,&nbsp;Marhaba Noor,&nbsp;Hamza Nawaz,&nbsp;Haider Ali,&nbsp;M. Usama Jansher","doi":"10.1007/s11664-024-11359-4","DOIUrl":"10.1007/s11664-024-11359-4","url":null,"abstract":"<div><p>Graphene has a large surface area, an open interconnect structure, and superior electrical conductivity, making it a promising material for high-performance supercapacitors. The appropriate choice of aqueous electrolyte is essential for its application as an electrode in a supercapacitor. The present study explores the supercapacitive behavior of graphene nanoplatelets in aqueous electrolytes that are acidic (H<sub>2</sub>SO<sub>4</sub>), alkaline (NaOH), and neutral (Na<sub>2</sub>SO<sub>4</sub>). Among these, H<sub>2</sub>SO<sub>4</sub> delivers the maximum capacitance of 292 F/g, followed by NaOH and Na<sub>2</sub>SO<sub>4</sub>, with specific capacitance of 276 F g<sup>−1</sup> and 240 F g<sup>−1</sup>, respectively, from cyclic charge–discharge at a current density of 0.3 A g<sup>-1</sup>. Additionally, this electrode has maximum energy density and power density of 28 Wh kg<sup>−1</sup> and 270 W kg<sup>−1</sup>, and it retains 90% of its capacity over 5000 cycles in H<sub>2</sub>SO<sub>4</sub> electrolytes. An in-depth examination of supercapacitance is provided, along with an equivalent circuit simulation to deduce the behavior of the electrode–electrolyte interface.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"462 - 472"},"PeriodicalIF":2.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Dosimetric properties of LiB3O5:Ag using the OSL/TA-OSL method for Medical Radiation Application 医用辐射应用中LiB3O5:Ag剂量学特性的OSL/TA-OSL方法研究
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-02 DOI: 10.1007/s11664-024-11544-5
Sahil, Gopishankar Natanasabapathi, Sourab Shyleshan, Rajesh Kumar, Mukesh Kumar Yadav, Aruna Kaushik, Pratik Kumar
{"title":"Study of Dosimetric properties of LiB3O5:Ag using the OSL/TA-OSL method for Medical Radiation Application","authors":"Sahil,&nbsp;Gopishankar Natanasabapathi,&nbsp;Sourab Shyleshan,&nbsp;Rajesh Kumar,&nbsp;Mukesh Kumar Yadav,&nbsp;Aruna Kaushik,&nbsp;Pratik Kumar","doi":"10.1007/s11664-024-11544-5","DOIUrl":"10.1007/s11664-024-11544-5","url":null,"abstract":"<div><p>Due to numerous characteristics (chemical stability, optical transparency, etc.), tissue equivalency, and other factors, lithium borates are an appropriate material for radiation dosimetry. This work explores the optical stimulated luminescence (OSL) dosimetry of lithium triborate (LiB<sub>3</sub>O<sub>5</sub>) doped with Ag. Here, we have used thermally-assisted OSL (TA-OSL), where OSL is recorded following thermal stimulation of the sample, to assess the presence of primary dosimetric and deep defects. The optimized elevated temperature for LiB<sub>3</sub>O<sub>5</sub>:Ag was found to be 100°C corresponding to maximum TA-OSL intensity due to depletion of its filled traps (indicating deep defects). X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), and ultraviolet–visible (UV-Vis) spectrophotometry were all used to characterized the structural and chemical properties of the sample. Along with other OSL characteristics like fading and repeatability, response of the obtained nanophosphor under CW-OSL with x-ray photons and electrons of a range of energies including cobalt-60 in radiotherapy has also been examined.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"54 1","pages":"180 - 190"},"PeriodicalIF":2.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142859476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical and Optical Properties of Tellurium Dioxide-Based Quaternary Glasses: Potential for Nonlinear Optical Applications 基于二氧化碲的四元玻璃的物理和光学性质:非线性光学应用的潜力
IF 2.2 4区 工程技术
Journal of Electronic Materials Pub Date : 2024-11-01 DOI: 10.1007/s11664-024-11566-z
Komal Poria, Rajesh Parmar, Harita Kumari, Sunil Dhankhar, R. S. Kundu
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