Study of Dosimetric properties of LiB3O5:Ag using the OSL/TA-OSL method for Medical Radiation Application

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-11-02 DOI:10.1007/s11664-024-11544-5

Sahil, Gopishankar Natanasabapathi, Sourab Shyleshan, Rajesh Kumar, Mukesh Kumar Yadav, Aruna Kaushik, Pratik Kumar

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引用次数: 0

Abstract

Due to numerous characteristics (chemical stability, optical transparency, etc.), tissue equivalency, and other factors, lithium borates are an appropriate material for radiation dosimetry. This work explores the optical stimulated luminescence (OSL) dosimetry of lithium triborate (LiB₃O₅) doped with Ag. Here, we have used thermally-assisted OSL (TA-OSL), where OSL is recorded following thermal stimulation of the sample, to assess the presence of primary dosimetric and deep defects. The optimized elevated temperature for LiB₃O₅:Ag was found to be 100°C corresponding to maximum TA-OSL intensity due to depletion of its filled traps (indicating deep defects). X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), and ultraviolet–visible (UV-Vis) spectrophotometry were all used to characterized the structural and chemical properties of the sample. Along with other OSL characteristics like fading and repeatability, response of the obtained nanophosphor under CW-OSL with x-ray photons and electrons of a range of energies including cobalt-60 in radiotherapy has also been examined.

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医用辐射应用中LiB3O5:Ag剂量学特性的OSL/TA-OSL方法研究

由于许多特性（化学稳定性、光学透明性等）、组织等效性和其他因素，硼酸锂是一种适合辐射剂量测定的材料。本文研究了银掺杂三硼酸锂（LiB3O5）的光激发发光（OSL）剂量学。在这里，我们使用热辅助OSL (TA-OSL)，在样品热刺激后记录OSL，以评估初级剂量学和深度缺陷的存在。发现LiB3O5:Ag的最佳升温温度为100℃，对应于TA-OSL的最大强度，这是由于其填充的陷阱耗尽（表明深层缺陷）。采用x射线衍射（XRD）、透射电子显微镜（TEM）、x射线能谱（EDS）、紫外-可见（UV-Vis）分光光度法对样品的结构和化学性质进行了表征。除了衰减和可重复性等OSL特性外，还研究了所获得的纳米荧光粉在cd -OSL下对包括钴-60在内的一系列能量的x射线光子和电子的响应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.