{"title":"Photoluminescence Characteristics of Post-annealed Cu2O Thin Films","authors":"Chin-Hau Chia, Shih-Hao Su, Yu-Min Hu, Jau-Wern Chiou, Chin-Chung Yu, Sheng-Rui Jian","doi":"10.1007/s11664-024-11416-y","DOIUrl":null,"url":null,"abstract":"<p>Cuprous oxide (Cu<sub>2</sub>O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO<sub>2</sub>). Reduction and oxidation of oxygen were found in thin films annealed under PO<sub>2</sub> of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu<sub>2</sub>O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO<sub>2</sub> of 0.3 Pa and 0.7 Pa, Cu<sub>2</sub>O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu<sub>2</sub>O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11416-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Cuprous oxide (Cu2O) thin films grown by radio-frequency magnetron sputtering were post-annealed at 700°C under various oxygen partial pressures (PO2). Reduction and oxidation of oxygen were found in thin films annealed under PO2 of 0.1 Pa and 2.0 Pa, respectively. We investigated the photoluminescence characteristics of the Cu2O thin films measured at low temperature (30 K) and room temperature (300 K). When post-annealed at PO2 of 0.3 Pa and 0.7 Pa, Cu2O films presented dominant PL lines originating from transitions of excitons and doubly charged oxygen vacancies at low temperature, and solely excitonic recombination at room temperature. The temperature-dependent exciton spectra were well modeled in terms of phonon-assisted recombination of ortho-excitons. On the other hand, a broad luminescence band around 2.2 eV dominated in oxygen-deficient and over-oxidized Cu2O thin films. By comparing the results of grazing-incident x-ray diffraction and luminescence spectra, we believe that the origin of this band, however, involves extrinsic bands induced by structural imperfections.
通过射频磁控溅射法生长的氧化亚铜（Cu2O）薄膜在不同氧分压（PO2）条件下于 700°C 进行后退火。在 0.1 Pa 和 2.0 Pa 的氧分压下退火的薄膜中分别出现了氧的还原和氧化。我们研究了在低温（30 K）和室温（300 K）下测量的 Cu2O 薄膜的光致发光特性。当在 0.3 Pa 和 0.7 Pa 的 PO2 下进行后退火时，Cu2O 薄膜在低温下呈现出源于激子和双电荷氧空位跃迁的主要光致发光线，而在室温下则完全呈现出激子重组的光致发光线。与温度相关的激子光谱很好地模拟了正激子的声子辅助重组。另一方面，在缺氧和过度氧化的 Cu2O 薄膜中，2.2 eV 附近的宽发光带占主导地位。通过比较掠入式 X 射线衍射和发光光谱的结果，我们认为该发光带的起源是由结构缺陷引起的外发光带。
期刊介绍：
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.
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