Influence of Treatment Time on the Synthesis of Copper Oxide Semiconductor Films by Cathode Cage Plasma Deposition

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-09-14 DOI:10.1007/s11664-024-11427-9

Júlio Fernando Sousa de Carvalho, Renan Matos Monção, Ediones Maciel de Sousa, Cleânio da Luz Lima, Carla Laize dos Santos Cruz Costa, Ramón Raudel Pena Garcia, Michelle Cequeira Feitor, Thércio Henrique de Carvalho Costa, Maxwell Santana Libório, Rômulo Ribeiro Magalhães de Sousa

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Abstract

Due to its elemental abundance, nontoxic nature, and suitable optical-electrical properties, copper oxide is a valuable p-type semiconductor for photovoltaic (PV) applications. However, synthesizing copper oxide films for PV devices with a band gap close to the Shockley–Queisser limit (1.4 eV) using a one-step deposition process is important for maximum efficiency and synthesis simplification. In this work, cathodic cage plasma deposition (CCPD) of copper oxide (CuO + Cu₂O) films on glass was performed to evaluate the microstructural, morphological, chemical, and band gap changes as a function of treatment time (2 h, 3 h, 4 h, and 5 h). The samples were analyzed by scanning electron microscopy, energy-dispersive spectroscopy, x-ray diffraction, and Raman spectroscopy to identify the morphology, chemical composition, and crystalline phases of the deposited films, and diffuse reflectance spectroscopy was used to calculate the band gap width. The films showed characteristics of absorbing material in the visible region with band gap values from 1.43 eV to 1.5 eV. However, the sample treated for 3 h had a compact coating with a thickness of 1.46 µm and band gap energy of 1.43 eV, showing the applicability of the CCPD technique for synthesizing copper oxide absorber layers with an optimum band gap in a single deposition step.

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处理时间对阴极笼等离子体沉积法合成氧化铜半导体薄膜的影响

氧化铜元素丰富、无毒，而且具有合适的光电特性，因此是光伏（PV）应用中一种重要的 p 型半导体。然而，使用一步沉积工艺为光伏设备合成带隙接近肖克利-奎塞尔极限（1.4 eV）的氧化铜薄膜，对于实现最高效率和简化合成非常重要。在这项工作中，对玻璃上的氧化铜（CuO + Cu2O）薄膜进行了阴极笼等离子体沉积（CCPD），以评估微观结构、形态、化学和带隙变化与处理时间（2 小时、3 小时、4 小时和 5 小时）的函数关系。样品通过扫描电子显微镜、能量色散光谱、X 射线衍射和拉曼光谱进行分析，以确定沉积薄膜的形态、化学成分和结晶相，并利用漫反射光谱计算带隙宽度。薄膜在可见光区域显示出吸收材料的特征，带隙值在 1.43 eV 至 1.5 eV 之间。然而，处理 3 小时的样品具有厚度为 1.46 µm、带隙能为 1.43 eV 的致密涂层，这表明 CCPD 技术适用于在单一沉积步骤中合成具有最佳带隙的氧化铜吸收层。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.