IEEE Journal of Photovoltaics最新文献_第5页

Inline Plating of Ni/Cu Contacts for Industrial TOPCon Si Solar Cells—Status and Outlook 工业TOPCon Si太阳能电池内嵌镀Ni/Cu触点的现状与展望

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-03-01 Epub Date: 2026-02-23 DOI: 10.1109/JPHOTOV.2026.3663685

Jonas Eckert;Sven Kluska;René Haberstroh;Christian Schmiga;Sebastian Mack;Mathias Kamp;Damian Brunner;Jan Nekarda;Florian Clement

{"title":"Inline Plating of Ni/Cu Contacts for Industrial TOPCon Si Solar Cells—Status and Outlook","authors":"Jonas Eckert;Sven Kluska;René Haberstroh;Christian Schmiga;Sebastian Mack;Mathias Kamp;Damian Brunner;Jan Nekarda;Florian Clement","doi":"10.1109/JPHOTOV.2026.3663685","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3663685","url":null,"abstract":"This article explores an inline plating metallization technique aimed at reducing silver usage in the production of tunnel oxide passivated contact (TOPCon) silicon solar cells. Utilizing ultrashort-pulse UV laser patterning combined with electrochemical deposition of Ni, Cu, and Ag, this approach has successfully achieved efficiencies up to 24% with silver consumption reduced to 1.1 mg/Wp. The process has been applied using pilot line equipment developed by RENA Technologies GmbH. This work not only demonstrates the potential of inline plating for cost-effective solar cell manufacturing but also addresses industrially feasible mitigation strategies for challenges such as contact adhesion and process stability. These include strategies to avoid insufficient Ni nucleation and uneven plating current injection, which are critical for achieving low contact resistivity and high fill factors (FF). As a result, FF of (82.1 ± 0.3)% were demonstrated for a batch of 186 TOPCon solar cells (M10 wafer size). In addition, reliability tests on fabricated mini modules demonstrate promising resistance to degradation. This research advances TOPCon solar cell technology by providing deeper insights into the piloting of inline plating technology for cost-effective and silver-lean metallization of TOPCon solar cells.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 3","pages":"353-360"},"PeriodicalIF":2.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11407927","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148146832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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IEEE Journal of Photovoltaics Publication Information IEEE光电杂志出版信息

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-02-20 DOI: 10.1109/JPHOTOV.2026.3663473

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IEEE Journal of Photovoltaics Information for Authors IEEE光电期刊，作者信息

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-02-20 DOI: 10.1109/JPHOTOV.2026.3663479

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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Ultrawide Band Gap Semiconductor Device for RF, Power and Optoelectronic Applications” IEEE电子器件学报特刊“用于射频、功率和光电子应用的超宽带隙半导体器件”征文

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-02-20 DOI: 10.1109/JPHOTOV.2026.3663477

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Impact of NaF Precursor Layer Thickness on Submicrometer Rear-passivated Coevaporated CIGS Solar Cells NaF前驱体层厚度对亚微米后钝化共蒸发CIGS太阳能电池的影响

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-02-09 DOI: 10.1109/JPHOTOV.2026.3653069

André F. Violas;Bárbara L. Sieira;Xavier L. Pinheiro;António J. N. Oliveira;Jennifer P. Teixeira;Paulo A. Fernandes;Pedro M. P. Salomé

{"title":"Impact of NaF Precursor Layer Thickness on Submicrometer Rear-passivated Coevaporated CIGS Solar Cells","authors":"André F. Violas;Bárbara L. Sieira;Xavier L. Pinheiro;António J. N. Oliveira;Jennifer P. Teixeira;Paulo A. Fernandes;Pedro M. P. Salomé","doi":"10.1109/JPHOTOV.2026.3653069","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3653069","url":null,"abstract":"Rear interface passivation on submicrometer Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells through nanopatterned dielectric layers has enabled performance gains. The combined optimization of the rear contact interface and the absorber properties enables high-efficiency ultrathin CIGS solar cells. However, the absorber quality of a standard thin 2000 nm CIGS has not been suitably maintained in absorbers with thickness values around 500 nm. Establishing an optimized Na doping, absorber crystallinity, and bandgap profile on such submicrometer CIGS solar cells has been challenging. Moreover, the Na doping may also be influenced by the rear contact architectures implemented in passivated solar cells, e.g., affecting the diffusion of Na from the soda-lime glass. Nonetheless, a proper Na supply into CIGS is critical for an optimized absorber quality. Therefore, this study evaluates the impact of the amount of Na supply controlled through a NaF precursor layer on a rear passivated ultrathin CIGS solar cell. The NaF layer thickness leading to the best performance solar cells in this study, attributed to high absorber crystallinity and low ordered vacancy compound content, is lower than that used in standard thin 2000 nm cells. It suggests that the transition to ultrathin solar cells is not straightforward, and the cell architecture influences the conditions to reach the optimum absorber properties.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"196-204"},"PeriodicalIF":2.6,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Thermal-Aware Tracking for Photovoltaics: Reducing Module Degradation Without Sacrificing Yield 光伏电池的热感知跟踪：在不牺牲产量的情况下减少组件退化

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-02-09 DOI: 10.1109/JPHOTOV.2026.3654124

Zeinab Haydous;Robinson Cavieres Abarca;Phillip Hamer;Nathan Chang;Felipe Valencia;Bram Hoex

{"title":"Thermal-Aware Tracking for Photovoltaics: Reducing Module Degradation Without Sacrificing Yield","authors":"Zeinab Haydous;Robinson Cavieres Abarca;Phillip Hamer;Nathan Chang;Felipe Valencia;Bram Hoex","doi":"10.1109/JPHOTOV.2026.3654124","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3654124","url":null,"abstract":"Elevated operating temperatures for photovoltaic modules remain a critical challenge for PV systems, particularly in regions with high irradiance. High temperatures lower efficiency and accelerate module degradation. Single-axis trackers generally rely on algorithms that maximize irradiance capture. To tackle the dual challenge of maximizing production while preventing overheating, we propose a thermal-aware tracking algorithm. The method substantially reduces module temperatures during inverter clipping, a common occurrence in PV systems with high dc/ac ratios. By moderating plane-of-array irradiance (POAI) only when excess power cannot be exported, the algorithm reduces the module temperature without compromising energy yield. Validation using an advanced thermal model that accounts for wind-driven convection and radiative exchange with the sky shows that, under the climatic and operational conditions in Chile, the algorithm performs best when panels are oriented closer to horizontal. Implemented on a solar tracker in northern Chile, the algorithm achieved module temperature reductions of up to 7.7 °C along with decreased UV exposure, enhancing thermal performance without compromising system output and thereby improving efficiency while minimizing degradation.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"250-256"},"PeriodicalIF":2.6,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Nonuniform Luminescence Changes Under Illumination and Applied Voltage in Perovskite Photovoltaic Modules 光照和外加电压下钙钛矿光伏组件的非均匀发光变化

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-02-04 DOI: 10.1109/JPHOTOV.2026.3656498

Takeshi Tayagaki;Kohei Yamamoto;Takurou N. Murakami;Masahiro Yoshita

{"title":"Nonuniform Luminescence Changes Under Illumination and Applied Voltage in Perovskite Photovoltaic Modules","authors":"Takeshi Tayagaki;Kohei Yamamoto;Takurou N. Murakami;Masahiro Yoshita","doi":"10.1109/JPHOTOV.2026.3656498","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3656498","url":null,"abstract":"The nonuniform luminescence changes were investigated under illumination and applied voltage in perovskite photovoltaic (PV) modules. The intensity of photoluminescence (PL) and electroluminescence (EL) intensities gradually decreased under illumination and applied voltage, respectively, which could be due to ion migration. This is implied by the metastable behavior of the device: the power decreased under illumination and recovered after dark storage. The rate of decrease in PL and EL intensities was different for each subsolar cell, indicating the nonuniform performance of perovskite solar cells in the module. In addition, the EL image after dark storage shows a speckle pattern and a decrease in the bright EL spots under the applied voltage. These changes indicate that the interface between the perovskite and charge-transport layer may not recover uniformly during dark storage. These results indicate that transient luminescence imaging to evaluate the presence of inhomogeneous layers, such as the absorbers, can contribute to the understanding of the degradation of perovskite PVs.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"205-210"},"PeriodicalIF":2.6,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Lithography-Free Mesa Isolation by Laser Ablation for Multijunction III-V Photovoltaic Space Power Generation 多结III-V型光伏空间发电中激光烧蚀无光刻平台隔离

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-02-04 DOI: 10.1109/JPHOTOV.2026.3653058

AJ Gray;Sarah Collins;Shaniah Greene;Jeff Squier;William E. McMahon;Nate Miller;Zac Bittner;Daniel Derkacs;Myles A. Steiner;Theresa E. Saenz

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Photovoltaic Module Backsheet Burns Attributed to Misaligned Busbar Wires 由于母线错位导致的光伏组件背板灼伤

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-01-29 DOI: 10.1109/JPHOTOV.2026.3654082

Steve Johnston;Dana B. Kern;Rebecca B. Wai;Harvey Guthrey;Steven P. Harvey;Ingrid L. Repins

{"title":"Photovoltaic Module Backsheet Burns Attributed to Misaligned Busbar Wires","authors":"Steve Johnston;Dana B. Kern;Rebecca B. Wai;Harvey Guthrey;Steven P. Harvey;Ingrid L. Repins","doi":"10.1109/JPHOTOV.2026.3654082","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3654082","url":null,"abstract":"A photovoltaic module in an outdoor single-axis tracking, utility-scale field experienced a backsheet burn that exposed the rear of the cells and started a grass fire. The opening in the backsheet developed due to increased heating where the busbar wires stringing the cells together were offset from their original solder pad locations. Several other examples of similar backsheet burns were found at this installation, and some cases also show that thermal stress caused the front glass to crack and shatter. Photoluminescence, electroluminescence, and thermal imaging techniques document the module performance and cell damage. Ultraviolet fluorescence provides time-dependent information to distinguish an older cell crack that developed with the backsheet melting from a newer crack that formed during the arc flash fire event and a scrape likely from handling to remove and transport the module. Microscopy analysis identifies the metal composition of the solder as tin/lead and not a bismuth-containing low-temperature variety. Laser isolation of a cell contact area with misaligned wire shows intermittent contact quality, suggesting the module likely passed factory screening and showed no high contact resistance prior to aging in the field.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"225-231"},"PeriodicalIF":2.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Effect of Laser Cutting Procedures on Overall Performance of N-Type TOPCon Silicon Solar Cells 激光切割工艺对n型TOPCon硅太阳能电池整体性能的影响

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2026-01-28 DOI: 10.1109/JPHOTOV.2025.3646333

Huayun Ge;Xing Li;Chunlin Guo;Jiawang Chen;Deshuang Chen;Yong Ren;Rui Jia

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