Brandon K. Byford;Laura E. Boucheron;Bruce H. King;Jennifer L. Braid
{"title":"先进的光伏组件特性:利用图像变压器从电致发光图像预测电流-电压曲线","authors":"Brandon K. Byford;Laura E. Boucheron;Bruce H. King;Jennifer L. Braid","doi":"10.1109/JPHOTOV.2025.3562931","DOIUrl":null,"url":null,"abstract":"Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (<italic>I–V</i>) curve analyzes for identification of damage and power loss. <italic>I–V</i> curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict <italic>I–V</i> curves for PV modules from their corresponding EL images. The predicted <italic>I–V</i> curves allow the accurate prediction of the maximum power point (MPP), short-circuit current <inline-formula><tex-math>$I_{\\text {sc}}$</tex-math></inline-formula>, and open-circuit voltage <inline-formula><tex-math>$V_{\\text {oc}}$</tex-math></inline-formula> with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance <inline-formula><tex-math>$R_{\\text {s}}$</tex-math></inline-formula> demonstrates a mean error of 5.19%, and the photocurrent <inline-formula><tex-math>$I$</tex-math></inline-formula> a mean error of 0.197%. The shunt resistance <inline-formula><tex-math>$R_{\\text {sh}}$</tex-math></inline-formula> and dark current <inline-formula><tex-math>$I_{\\text {o}}$</tex-math></inline-formula> parameters are predicted with larger errors because of their sensitivity to small changes in the <italic>I–V</i> curve.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"557-565"},"PeriodicalIF":2.5000,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11002587","citationCount":"0","resultStr":"{\"title\":\"Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images\",\"authors\":\"Brandon K. Byford;Laura E. Boucheron;Bruce H. King;Jennifer L. Braid\",\"doi\":\"10.1109/JPHOTOV.2025.3562931\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (<italic>I–V</i>) curve analyzes for identification of damage and power loss. <italic>I–V</i> curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict <italic>I–V</i> curves for PV modules from their corresponding EL images. The predicted <italic>I–V</i> curves allow the accurate prediction of the maximum power point (MPP), short-circuit current <inline-formula><tex-math>$I_{\\\\text {sc}}$</tex-math></inline-formula>, and open-circuit voltage <inline-formula><tex-math>$V_{\\\\text {oc}}$</tex-math></inline-formula> with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance <inline-formula><tex-math>$R_{\\\\text {s}}$</tex-math></inline-formula> demonstrates a mean error of 5.19%, and the photocurrent <inline-formula><tex-math>$I$</tex-math></inline-formula> a mean error of 0.197%. The shunt resistance <inline-formula><tex-math>$R_{\\\\text {sh}}$</tex-math></inline-formula> and dark current <inline-formula><tex-math>$I_{\\\\text {o}}$</tex-math></inline-formula> parameters are predicted with larger errors because of their sensitivity to small changes in the <italic>I–V</i> curve.\",\"PeriodicalId\":445,\"journal\":{\"name\":\"IEEE Journal of Photovoltaics\",\"volume\":\"15 4\",\"pages\":\"557-565\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11002587\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Photovoltaics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/11002587/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11002587/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images
Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (I–V) curve analyzes for identification of damage and power loss. I–V curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict I–V curves for PV modules from their corresponding EL images. The predicted I–V curves allow the accurate prediction of the maximum power point (MPP), short-circuit current $I_{\text {sc}}$, and open-circuit voltage $V_{\text {oc}}$ with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance $R_{\text {s}}$ demonstrates a mean error of 5.19%, and the photocurrent $I$ a mean error of 0.197%. The shunt resistance $R_{\text {sh}}$ and dark current $I_{\text {o}}$ parameters are predicted with larger errors because of their sensitivity to small changes in the I–V curve.
期刊介绍:
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.