IEEE Journal of Photovoltaics最新文献

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Ultrawide Band Gap Semiconductor Device for RF, Power and Optoelectronic Applications” IEEE电子器件学报特刊“用于射频、功率和光电子应用的超宽带隙半导体器件”征文

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-08-21 DOI: 10.1109/JPHOTOV.2025.3597182

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IEEE Journal of Photovoltaics Publication Information IEEE光电杂志出版信息

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-08-21 DOI: 10.1109/JPHOTOV.2025.3597174

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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Reliability of Advanced Nodes” IEEE电子设备学报“先进节点的可靠性”特刊征文

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-08-21 DOI: 10.1109/JPHOTOV.2025.3597184

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IEEE Journal of Photovoltaics Information for Authors IEEE光电期刊，作者信息

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-08-21 DOI: 10.1109/JPHOTOV.2025.3597178

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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Wide Band Semiconductors for Automotive Applications” IEEE电子器件学报“汽车用宽带半导体”特刊征文

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-08-21 DOI: 10.1109/JPHOTOV.2025.3597180

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The Impact of Spectral Irradiance Aggregation Into Kato Bands and PV-Bands on Estimates of Photovoltaic Spectral Effects 光谱辐照度聚集到加藤波段和pv波段对光伏光谱效应估计的影响

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-08-08 DOI: 10.1109/JPHOTOV.2025.3583031

Sophie Pelland;Stefan Riechelmann

{"title":"The Impact of Spectral Irradiance Aggregation Into Kato Bands and PV-Bands on Estimates of Photovoltaic Spectral Effects","authors":"Sophie Pelland;Stefan Riechelmann","doi":"10.1109/JPHOTOV.2025.3583031","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3583031","url":null,"abstract":"Full-resolution spectral irradiance data can comprise upwards of 2000–3000 data points at a single time step. Given that photovoltaic (PV) modeling is regularly performed with subhourly time resolutions over multiyear periods, incorporating spectral effects can become challenging both in terms of file sizes and computational burden. For this reason, spectral irradiances are sometimes aggregated into a limited number of wavelength bands (or wavebands), such as the 32-band grouping known as Kato bands that is used in the IEC 61853 series of standards on “PV module performance testing and energy rating.” To test the impact of such aggregation, measured, and modeled spectral irradiance data from two sites in the United States—Tempe, Arizona and Golden, Colorado—are used to assess the impact on PV spectral effect estimates of aggregating spectral irradiances into Kato bands and into two other sets of wavebands known as PV-bands. Calculations using the aggregated spectra are compared with those using the full-resolution spectra, for crystalline silicon and cadmium telluride modules. Each of the three sets of wavebands yields negligible errors of less than 0.1% in the spectral derate factor, which characterizes long-term spectral effects. This indicates that both Kato bands and PV-bands should be sufficient for the purposes of PV energy rating. Meanwhile, a recent version of PV-bands performs best for evaluating the instantaneous spectral mismatch factor, leading to errors of less than 0.2% across all time steps for both sites and PV module technologies, while instantaneous errors for Kato bands reach magnitudes of up to 1.4%.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"657-661"},"PeriodicalIF":2.6,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Modeling Cracks in Silicon-Heterojunction Photovoltaic Modules: A Real-World Case Study 硅异质结光伏组件中的裂纹建模：一个真实世界的案例研究

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-07-25 DOI: 10.1109/JPHOTOV.2025.3587887

Marco Nicoletto;Davide Panizzon;Alessandro Caria;Nicola Trivellin;Carlo De Santi;Matteo Buffolo;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini

{"title":"Modeling Cracks in Silicon-Heterojunction Photovoltaic Modules: A Real-World Case Study","authors":"Marco Nicoletto;Davide Panizzon;Alessandro Caria;Nicola Trivellin;Carlo De Santi;Matteo Buffolo;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini","doi":"10.1109/JPHOTOV.2025.3587887","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3587887","url":null,"abstract":"This work investigates the impact of cracks on silicon heterojunction photovoltaic (PV) modules by analyzing their electrical and thermal behavior under low and high current conditions. The analysis was conducted on PV modules affected by a severe hailstorm, which produced hailstones up to 16 cm in diameter, far exceeding the standard test sizes (IEC 61215). A combination of electroluminescence (EL) and infrared (IR) thermography, along with dark and light current–voltage characterization, was employed to examine both hail and operator-induced cracks. The findings revealed that these cracks, which are latent damages not visible to the naked eye but only with EL and IR investigations, lead to localized temperature increase near open circuit voltage, and to a more uniform distributed temperature increase near short circuit conditions. A Simulink/Matlab model was developed to reproduce the thermal behavior of cracked cells in series with intact ones, to reproduce what happens in a real-world scenario. The results emphasize the importance of identifying latent defects in PV modules to ensure long-term reliability, safety, and efficiency, offering insights into their electrical and thermal behavior in low and high current regime.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"639-644"},"PeriodicalIF":2.6,"publicationDate":"2025-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Data Quality Analyses for Automatic Aerial Thermography Inspection of PV Power Plants 光伏电站航空热像仪自动检测数据质量分析

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-07-23 DOI: 10.1109/JPHOTOV.2025.3587297

Victoria Lofstad-Lie;Aleksander Simonsen;Tønnes Frostad Nygaard;Erik Stensrud Marstein

{"title":"Data Quality Analyses for Automatic Aerial Thermography Inspection of PV Power Plants","authors":"Victoria Lofstad-Lie;Aleksander Simonsen;Tønnes Frostad Nygaard;Erik Stensrud Marstein","doi":"10.1109/JPHOTOV.2025.3587297","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3587297","url":null,"abstract":"As the installed capacity of photovoltaic power plants continues its near exponential growth, cost-efficient operation and maintenance strategies become increasingly crucial. Aerial infrared thermography has enabled fast and robust fault detection in utility-scale PV plants. In this article, we explore two key approaches to improve inspection efficiency: increase the flight altitude and deploy swarms of unmanned aerial vehicles. A larger imaging distance expands the field of view but reduces fault detectability and georeferencing accuracy. In this work, we study the tradeoff between inspection efficiency and data quality for automatic fault detection and localization. The YOLO11 machine learning model was trained to detect defects in thermal images, and its performance was evaluated to vary imaging distances and camera pitch angles. Fault detection remained robust up to approximately 80 m, but georeferencing error became the primary limiting factor. Finally, we conduct a UAV swarm-based inspection of a PV plant, integrating automatic fault detection and localization, and compare the results with ground truth data.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"722-731"},"PeriodicalIF":2.6,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11091333","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge Transport Layer Capacitance Contribution to Si Solar Cell Optoelectronic Properties Investigated Using Photocarrier Radiometry 利用光载流子辐射法研究电荷传输层电容对硅太阳能电池光电性能的贡献

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-07-07 DOI: 10.1109/JPHOTOV.2025.3581692

Alexander Melnikov;Andreas Mandelis;Peng Song;Junyan Liu

{"title":"Charge Transport Layer Capacitance Contribution to Si Solar Cell Optoelectronic Properties Investigated Using Photocarrier Radiometry","authors":"Alexander Melnikov;Andreas Mandelis;Peng Song;Junyan Liu","doi":"10.1109/JPHOTOV.2025.3581692","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3581692","url":null,"abstract":"The question of identifying the dominant capacitance in Si solar cell optoelectronic transport phenomena under open circuit conditions is explored using quantitative noncontacting laser photocarrier radiometry (PCR) as a dynamic spectrally gated photoluminescence method. The combined theoretical and experimental approach addresses the dependence of the PCR signal on the capacitance of the charge transport layer (CTL) and of the base layer of the p-n junction which, in conjunction with the solar cell series resistance, form <italic>RC</i> diffusive time constants shown to be sensitively measurable using PCR frequency scans. The experimental strategy is based on the dependence of layer capacitance on the laser-illuminated area and involves frequency responses under partial or total surface area illumination. It is shown that the recombination lifetime and CTL diffusion lifetime <inline-formula><tex-math>${{tau }_{RC}}$</tex-math></inline-formula> are mainly responsible for the kinetics and extraction of nonequilibrium optically generated carrier density waves in three types of photovoltaic Si solar cells. It is concluded that <inline-formula><tex-math>${{tau }_{RC}},$</tex-math></inline-formula>which is related to the thin upper CTL and the associated recombination lifetime, plays the main role in the dynamic optoelectronic PCR frequency response of all tested devices. <inline-formula><tex-math>${rm{Through the capacitance of this layer}}, {{tau }_{RC}}$</tex-math></inline-formula> strongly affects free photocarrier transport across the p-n junction, surface distribution, and electrode collection, therefore CTL capacitance should become a major focus of solar efficiency enhancement designs and studies.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"662-671"},"PeriodicalIF":2.6,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Integrated Methodology for Solar Tracker Performance Assessment and Energy Loss Quantification 太阳能跟踪器性能评估和能量损失量化的综合方法

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-07-02 DOI: 10.1109/JPHOTOV.2025.3581709

Mohamed Limam El Hairach;Amal Tmiri;Insaf Bellamine;Tony Mellors;Hassan Silkan

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