IEEE Journal of Photovoltaics最新文献

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nc-SiC by PECVD for High-Temperature Passivating Contacts 用于高温钝化触点的PECVD纳米碳化硅
IF 2.6 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-23 DOI: 10.1109/JPHOTOV.2025.3577294
Ezgi Genc;Julien Hurni;Arnold Müller;Christof Vockenhuber;Takashi Koida;Audrey Morisset;Christophe Ballif;Franz-Josef Haug
{"title":"nc-SiC by PECVD for High-Temperature Passivating Contacts","authors":"Ezgi Genc;Julien Hurni;Arnold Müller;Christof Vockenhuber;Takashi Koida;Audrey Morisset;Christophe Ballif;Franz-Josef Haug","doi":"10.1109/JPHOTOV.2025.3577294","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3577294","url":null,"abstract":"This work investigates the potential of nanocrystalline silicon carbide (nc-SiC) films as transparent passivating contacts for high-efficiency solar cells. A plasma-enhanced chemical vapor deposition process for high hydrogen radical density was developed to fabricate nc-SiC films. The influence of phosphorus (P) doping and thermal treatment on the structural, compositional, and electrical properties of these films was investigated. Increased doping reduced the contact resistance but also negatively affected the open circuit voltage (<inline-formula><tex-math>$iV_{text{oc}}$</tex-math></inline-formula>). We identified a set of parameters that provided a compromise between conductivity and passivation, resulting in a maximum <inline-formula><tex-math>$iV_{text{oc}}$</tex-math></inline-formula> of 708 mV on textured surfaces with a contact resistance of around 100 <inline-formula><tex-math>$mathrm{m}mathrm{Omega }mathrm{c}mathrm{m}^{2},$</tex-math></inline-formula>. In addition, nc-SiC exhibited superior ultraviolet transparency compared to poly silicon (poly-Si) and crystalline silicon (c-Si), with an absorption coefficient of <inline-formula><tex-math>$3times 10^{5}; text{cm}^{-1}$</tex-math></inline-formula> at 350 nm, lower than the typical <inline-formula><tex-math>$1times 10^{6}; text{cm}^{-1}$</tex-math></inline-formula> for poly-Si and c-Si.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"630-638"},"PeriodicalIF":2.6,"publicationDate":"2025-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IEEE Journal of Photovoltaics Publication Information IEEE光电杂志出版信息
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-20 DOI: 10.1109/JPHOTOV.2025.3576610
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引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Reliability of Advanced Nodes” IEEE电子设备学报“先进节点的可靠性”特刊征文
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-20 DOI: 10.1109/JPHOTOV.2025.3576533
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引用次数: 0
IEEE Journal of Photovoltaics Information for Authors IEEE光电期刊,作者信息
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-20 DOI: 10.1109/JPHOTOV.2025.3576614
{"title":"IEEE Journal of Photovoltaics Information for Authors","authors":"","doi":"10.1109/JPHOTOV.2025.3576614","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3576614","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"C3-C3"},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045374","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Wide Band Semiconductors for Automotive Application 《IEEE电子器件学报》特刊“汽车用宽带半导体”征文
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-20 DOI: 10.1109/JPHOTOV.2025.3576528
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Wide Band Semiconductors for Automotive Application","authors":"","doi":"10.1109/JPHOTOV.2025.3576528","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3576528","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"621-622"},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045373","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Ultrawide Band Gap Semiconductor Device for RF, Power and Optoelectronic Application 《IEEE电子器件学报》特刊“射频、功率和光电子应用的超宽带隙半导体器件”征文
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-20 DOI: 10.1109/JPHOTOV.2025.3576532
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Ultrawide Band Gap Semiconductor Device for RF, Power and Optoelectronic Application","authors":"","doi":"10.1109/JPHOTOV.2025.3576532","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3576532","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"624-625"},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045362","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Voltage-Matched All-Perovskite Double- and Triple-Junction Solar Modules for Building-Integrated Photovoltaics 用于建筑集成光伏的电压匹配全钙钛矿双结和三结太阳能组件
IF 2.6 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-20 DOI: 10.1109/JPHOTOV.2025.3577361
Yasuhiko Takeda;Ken-ichi Yamanaka;Naohiko Kato
{"title":"Voltage-Matched All-Perovskite Double- and Triple-Junction Solar Modules for Building-Integrated Photovoltaics","authors":"Yasuhiko Takeda;Ken-ichi Yamanaka;Naohiko Kato","doi":"10.1109/JPHOTOV.2025.3577361","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3577361","url":null,"abstract":"We designed multijunction solar modules for installation on building walls, in which all the submodules are composed of organic–inorganic hybrid perovskite solar cells, adopting the monolithically series-interconnected structures. Prior to considering concrete module configurations, we elucidated that the impacts of temporal and regional variations in the solar spectra on the vertically wall-installed modules are more notable than those on the modules installed on rooftops and in solar farms at the optimal tilt angles. As a result, the annually averaged conversion efficiencies for the double-junction (2J) modules of the conventional two-terminal configuration and other configurations that require the current matching between the top and bottom modules are notably degraded. By contrast, the voltage-matched (VM) 2J modules, in which the submodules yielding approximately the same maximal-power voltages (<italic>V</i><sub>MP</sub>) are connected in parallel, ensure high conversion efficiencies close to those for the four-terminal (4T) 2J modules even when wall installed because <italic>V</i><sub>MP</sub> is less sensitive to solar-spectrum variation than the photocurrents. The single output of the VM 2J modules is practically a great advantage over the dual output of the 4T 2J modules. An improved variant: the series–parallel-connecting VM triple-junction modules, in which the two-terminal middle/bottom modules are parallel connected with the top modules, further improve the conversion efficiencies under all the installation conditions.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"672-685"},"PeriodicalIF":2.6,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue 宣布IEEE/Optica出版集团光波技术杂志特刊
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-20 DOI: 10.1109/JPHOTOV.2025.3576530
{"title":"Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Special Issue","authors":"","doi":"10.1109/JPHOTOV.2025.3576530","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3576530","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 4","pages":"623-623"},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11045363","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144331630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intraday Outdoor Efficiency Changes in Metal-Halide Perovskite Photovoltaic Modules 金属卤化物钙钛矿光伏组件的日间室外效率变化
IF 2.6 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-13 DOI: 10.1109/JPHOTOV.2025.3575469
Michael G. Deceglie;Timothy J Silverman;Byron McDanold;Kevin Anderson;Daniel Riley;Bruce H. King;Joshua S. Stein;Laura T. Schelhas
{"title":"Intraday Outdoor Efficiency Changes in Metal-Halide Perovskite Photovoltaic Modules","authors":"Michael G. Deceglie;Timothy J Silverman;Byron McDanold;Kevin Anderson;Daniel Riley;Bruce H. King;Joshua S. Stein;Laura T. Schelhas","doi":"10.1109/JPHOTOV.2025.3575469","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3575469","url":null,"abstract":"We present outdoor observations of metal-halide perovskite modules deployed in the Photovoltaic Accelerator for Commercializing Technologies center, which houses one of the world's broadest efforts to test metal-halide perovskite photovoltaic modules outdoors. As of January 2025, outdoor testing has encompassed over 150 modules from 14 different partners. Our findings illustrate how daily changes in efficiency, driven by exposure to light, affect field performance in real-world conditions. These effects cannot be explained by existing outdoor performance models and frustrate the notion of a traditional temperature coefficient.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"652-656"},"PeriodicalIF":2.6,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of g-C3N4-Co3O4/TiO2 Composite Nanofiber Layers by Electrospinning for Indoor Dye-Sensitized Solar Cell Photoanodes 静电纺丝制备g-C3N4-Co3O4/TiO2复合纳米纤维层用于室内染料敏化太阳能电池光阳极
IF 2.6 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2025-06-10 DOI: 10.1109/JPHOTOV.2025.3574797
Yu-Hsun Nien;Jhih-Wei Zeng;Jung-Chuan Chou;Chih-Hsien Lai;Po-Hui Yang;Po- Yu Kuo;Wen-Hao Chen;Chia-Wei Wang;Mao-Yang Lee
{"title":"Fabrication of g-C3N4-Co3O4/TiO2 Composite Nanofiber Layers by Electrospinning for Indoor Dye-Sensitized Solar Cell Photoanodes","authors":"Yu-Hsun Nien;Jhih-Wei Zeng;Jung-Chuan Chou;Chih-Hsien Lai;Po-Hui Yang;Po- Yu Kuo;Wen-Hao Chen;Chia-Wei Wang;Mao-Yang Lee","doi":"10.1109/JPHOTOV.2025.3574797","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3574797","url":null,"abstract":"Nanofibers are a promising 1-D nanomaterial with significant potential to enhance the photovoltaic performance of dye-sensitized solar cells. The heterojunction composite material of g-C<sub>3</sub>N<sub>4</sub> and Co<sub>3</sub>O<sub>4</sub> (CN-Co<sub>3</sub>O<sub>4</sub>) is believed to improve electron transport. In this study, electrospinning technology was employed to incorporate a small amount of CN-Co<sub>3</sub>O<sub>4</sub> into TiO<sub>2</sub> nanofibers, forming composite nanofibers that serve as an additional layer for the photoanode. Photovoltaic performance measurements confirm that CN-Co<sub>3</sub>O<sub>4</sub>/TiO<sub>2</sub> nanofibers enhance electron transfer capability and increase the utilization of incident light. Under AM1.5G conditions, the cell modified with CN-Co<sub>3</sub>O<sub>4</sub>/TiO<sub>2</sub> nanofibers achieved a conversion efficiency of 6.14%, representing an approximate 42% improvement compared with unmodified cells. Furthermore, under a light intensity of 1800 lx, the cell exhibited a high conversion efficiency of 24.95%.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 5","pages":"645-651"},"PeriodicalIF":2.6,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144887703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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