A Noniterative Method of Estimating Parameter Values for the PVsyst Version 6 Single-Diode Model From IEC 61853-1 Matrix Measurements

IF 2.5 3区工程技术 Q3 ENERGY & FUELS

IEEE Journal of Photovoltaics Pub Date : 2025-04-07 DOI:10.1109/JPHOTOV.2025.3554338

Kevin S. Anderson;Clifford W. Hansen;Marios Theristis

引用次数: 0

Abstract

Photovoltaic performance modeling accuracy depends heavily on the quality of the input parameters. When relying on generic PAN files and datasheets, the input parameters often fail to accurately capture the behavior of every module with the same model number. Therefore, there is a need for methods to generate more accurate input data. In this study, we present a method for determining parameter values for the PVsyst version 6 photovoltaic module performance model from performance test measurements following the IEC 61853-1:2011 standard. The method is intentionally noniterative to facilitate implementation and reproducibility. We apply the method to datasets from 15 modules of various photovoltaic technologies (SHJ, TOPCon, IBC, PERC, n-PERT, Al-BSF, and CdTe), reproducing the original maximum power measurements with root-mean-squared (RMS) accuracy within 0.5% in all cases. The method's accuracy is compared to that of two iterative methods.

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从IEC 61853-1矩阵测量中估计PVsyst 6版本单二极管模型参数值的非迭代方法

光伏性能建模的准确性在很大程度上取决于输入参数的质量。如果依赖通用 PAN 文件和数据表，输入参数往往无法准确捕捉具有相同型号的每个模块的行为。因此，我们需要一种方法来生成更准确的输入数据。在本研究中，我们按照 IEC 61853-1:2011 标准提出了一种方法，用于根据性能测试测量结果确定 PVsyst 第 6 版光伏组件性能模型的参数值。该方法有意采用非迭代法，以便于实施和重现。我们将该方法应用于不同光伏技术（SHJ、TOPCon、IBC、PERC、n-PERT、Al-BSF 和 CdTe）的 15 个模块数据集，在所有情况下都能以均方根 (RMS) 精度在 0.5% 以内再现原始最大功率测量值。该方法的精度与两种迭代法进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Photovoltaics ENERGY & FUELS-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

7.00

自引率

10.00%

发文量

206

期刊介绍： The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.