IEEE Journal of Photovoltaics最新文献_第3页

Call for Papers for a Special Issue of IEEE Transactions on Materials for Electron Devices 《IEEE电子器件材料学报》特刊征文

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IEEE Journal of Photovoltaics Pub Date : 2025-02-20 DOI: 10.1109/JPHOTOV.2025.3540335

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IEEE Journal of Photovoltaics Publication Information IEEE光电杂志出版信息

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IEEE Journal of Photovoltaics Pub Date : 2025-02-20 DOI: 10.1109/JPHOTOV.2025.3537259

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Announcing an IEEE/Optica Publishing Group Journal of Lightwave Technology Specail Issue 发表IEEE/Optica出版集团光波技术杂志特刊

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IEEE Journal of Photovoltaics Pub Date : 2025-02-20 DOI: 10.1109/JPHOTOV.2025.3540329

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IEEE Journal of Photovoltaics Information for Authors IEEE光电期刊，作者信息

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IEEE Journal of Photovoltaics Pub Date : 2025-02-20 DOI: 10.1109/JPHOTOV.2025.3537263

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Hail Damage Investigation in Heterojunction Silicon Photovoltaic Modules: A Real-World Case Study 异质结硅光伏组件冰雹损伤研究：真实案例研究

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IEEE Journal of Photovoltaics Pub Date : 2025-02-19 DOI: 10.1109/JPHOTOV.2025.3539292

Marco Nicoletto;Davide Panizzon;Alessandro Caria;Nicola Trivellin;Carlo De Santi;Matteo Buffolo;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini

{"title":"Hail Damage Investigation in Heterojunction Silicon Photovoltaic Modules: A Real-World Case Study","authors":"Marco Nicoletto;Davide Panizzon;Alessandro Caria;Nicola Trivellin;Carlo De Santi;Matteo Buffolo;Gaudenzio Meneghesso;Enrico Zanoni;Matteo Meneghini","doi":"10.1109/JPHOTOV.2025.3539292","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3539292","url":null,"abstract":"Most photovoltaic (PV) modules are guaranteed for 25–30 years. However, severe climatic events, particularly hail, can lead premature damage. In this article, a residential PV system in Padova, Italy, was studied after exposure to a severe storm with hailstones up to 16 cm in diameter, which is more than two times larger than the standard size of test stones employed for module validation (7.5 cm, as per IEC 61215-2-2021). The goals are: 1) to demonstrate the relevance of hail testing beyond what currently required by the standards; 2) to demonstrate the presence of latent damage even in the absence of broken glass or of reduced performance; and 3) to discuss the associated risks. Forward bias electroluminescence (EL) and infrared (IR) radiation investigations were conducted in dark to minimize the impact of environmental influences. In the worst case, complete glass breakage results in solar cell fragmentation, which induces nonuniformity in current flow and thermal radiation, increasing losses, compromising electrical insulation, and requiring immediate replacement. In addition, dark and outdoor light current–voltage characteristics reveal significant decrease in output power, as well as increased leakage current. Remarkably, latent or invisible damage, detectable by reduced EL intensity and higher IR radiation, poses safety issues even in modules whose protective glass withstood the mechanical impact of hail. Modules with intact glass exhibit a decreased shunt resistance, with a negligible reduction in the output power with respect to a completely intact module. The results underline the necessity of inspecting the entire PV system following hailstorms, to detect any latent damages and promptly replace the damaged modules, even in the absence of glass breakage or reduction in the output power, to ensure long-term reliability.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"478-483"},"PeriodicalIF":2.5,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Parameter Translation for Photovoltaic Single-Diode Models 光伏单二极管模型的参数转换

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-19 DOI: 10.1109/JPHOTOV.2025.3539319

Lelia Deville;Clifford W. Hansen;Kevin S. Anderson;Terrence L. Chambers;Marios Theristis

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Sensitivity Analysis of Eddy Current Excess Carrier Recombination Lifetime Measurements Due to Input Parameter Uncertainty 输入参数不确定性下涡流过量载流子复合寿命测量的灵敏度分析

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-19 DOI: 10.1109/JPHOTOV.2025.3539294

Adrienne L. Blum;Harrison W. Wilterdink;Ronald A. Sinton

{"title":"Sensitivity Analysis of Eddy Current Excess Carrier Recombination Lifetime Measurements Due to Input Parameter Uncertainty","authors":"Adrienne L. Blum;Harrison W. Wilterdink;Ronald A. Sinton","doi":"10.1109/JPHOTOV.2025.3539294","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3539294","url":null,"abstract":"For decades, excess carrier recombination lifetime measurements using an eddy current photoconductance sensor have been essential in characterizing the quality of silicon photovoltaic samples prior to metallization. Key metrics reported from the analysis of these measurements include injection-dependent excess carrier recombination lifetime, emitter saturation current density, bulk lifetime, and the implied current–voltage curve. These metrics are crucial for process control, optimization, and technological advancements in photovoltaic research and development, as well as production. As modern high-efficiency cell designs increasingly rely on precise determination of these metrics, it is important to quantify their uncertainty due to all factors; this study specifically examines their sensitivity to uncertainties in the sample-specific input parameters required for their reporting. Overall, results with a high level of confidence, including less than 1-fA/cm<sup>2</sup> uncertainty in emitter saturation current density and less than 1-mV uncertainty in implied <inline-formula><tex-math>${V}_{mathrm{oc}}$</tex-math></inline-formula>, can be achieved with knowledge of the input thickness and substrate resistivity beyond what is specified on a wafer specification sheet.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 3","pages":"393-399"},"PeriodicalIF":2.5,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10893710","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143860815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit 与Shockley-Queisser极限相比，表现最好的光伏电池

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-07 DOI: 10.1109/JPHOTOV.2025.3533883

Camden Kasik;Marko Jošt;Ishwor Khatri;Marko Topič;James Sites

{"title":"Top-Performing Photovoltaic Cells Compared to the Shockley–Queisser Limit","authors":"Camden Kasik;Marko Jošt;Ishwor Khatri;Marko Topič;James Sites","doi":"10.1109/JPHOTOV.2025.3533883","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3533883","url":null,"abstract":"Top-performing single-junction and two-terminal tandem devices that include at least one polycrystalline cell are compared with each other and their ideal limits. The parameters of open-circuit voltage, short-circuit current, and fill-factor are individually compared to the Shockley–Queisser limit to investigate where different technologies have room to improve. Technologies, such as silicon and cadmium telluride have the most room for improvement in open-circuit voltage currently utilizing 87% and 81% of their maxima, respectively. Detailed diode and fill-factor loss analysis is presented for single-junction devices to give further insight on how they compare and where efficiency is lost. Single-crystal technologies demonstrate a fill-factor closer to the Shockley–Queisser limit than polycrystalline devices. The high diode quality factor of polycrystalline devices is the leading cause of the decreased fill-factor. Similar analysis on tandem cells with at least one thin-film cell shows that although their efficiency exceeds that of the single-junction cells, the fraction of their ideal efficiency is smaller. By comparing parameters to the Shockley–Queisser limit, it becomes clearer where certain technologies have the potential for improvement.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"268-273"},"PeriodicalIF":2.5,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Characterization of Field-Exposed Photovoltaic Modules Featuring Signs of Contact Degradation 具有接触退化迹象的野外暴露光伏组件的表征

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-07 DOI: 10.1109/JPHOTOV.2025.3531052

Max Liggett;Dylan J. Colvin;Andrew Ballen;Manjunath Matam;Hubert P. Seigneur;Mengjie Li;Andrew M. Gabor;Philip J. Knodle;Craig J. Neal;Sudipta Seal;Daniel Riley;Bruce H. King;Peter Michael;Laura S. Bruckman;Roger H. French;Kristopher O. Davis

{"title":"Characterization of Field-Exposed Photovoltaic Modules Featuring Signs of Contact Degradation","authors":"Max Liggett;Dylan J. Colvin;Andrew Ballen;Manjunath Matam;Hubert P. Seigneur;Mengjie Li;Andrew M. Gabor;Philip J. Knodle;Craig J. Neal;Sudipta Seal;Daniel Riley;Bruce H. King;Peter Michael;Laura S. Bruckman;Roger H. French;Kristopher O. Davis","doi":"10.1109/JPHOTOV.2025.3531052","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3531052","url":null,"abstract":"This work investigates several photovoltaic (PV) modules that have shown signs of metal contact corrosion due to field exposure in a hot and humid climate. This includes two multicrystalline silicon aluminum back surface field systems with 10 and 14 years of exposure and one monocrystalline silicon passivated emitter and rear cell system with four years of exposure. A comprehensive, multiscale characterization process is used to evaluate these PV modules in great detail. Current–voltage (<inline-formula><tex-math>$I-V$</tex-math></inline-formula>), Suns-<inline-formula><tex-math>$V_{text{OC}}$</tex-math></inline-formula> measurements, electroluminescence imaging, infrared imaging, and ultraviolet fluorescence imaging were performed, and locations of interest were cored and analyzed using cross-sectional scanning electron microscopy (SEM). A rigorous, quantitative analysis procedure for the cross-sectional SEM images is proposed and implemented. Careful characterization does reveal that some of these PV modules do indeed exhibit the same classic signs of acetic-acid-based corrosion of the glass frit that is present at the silver/silicon interface, which have been observed previously in PV modules exposed to damp heat in an environmental chamber.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"233-243"},"PeriodicalIF":2.5,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A Single Voltage Sensor Bypass Switch-Based Photovoltaic Fault Localization 基于单电压传感器旁路开关的光伏故障定位

IF 2.5 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-02-07 DOI: 10.1109/JPHOTOV.2025.3530001

Ali Alhejab;Muhammad Abbasi;Shehab Ahmed

{"title":"A Single Voltage Sensor Bypass Switch-Based Photovoltaic Fault Localization","authors":"Ali Alhejab;Muhammad Abbasi;Shehab Ahmed","doi":"10.1109/JPHOTOV.2025.3530001","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3530001","url":null,"abstract":"Photovoltaic (PV) energy systems are becoming an important source of sustainable energy. However, undiscovered faults within these systems may cause significant efficiency reduction. Localizing these faults to the module level is important for a quick fault diagnosis and maintaining the overall system efficiency. This article presents a novel method to localize intrastring, line-ground, cross-string, and partial shading faults in an <inline-formula><tex-math>$N$</tex-math></inline-formula> × <inline-formula><tex-math>$M$</tex-math></inline-formula> PV system down to the module level. The approach utilizes a single voltage sensor in the combiner box of the PV system and <inline-formula><tex-math>$lceil N/2 rceil$</tex-math></inline-formula> bypass switches per string to bypass the connected PV modules during faults. The technique initially relies on identifying the faulty string. Once this string is determined, the voltage associated with each module in that string is found. Each module's voltage in that string is obtained by measuring the string voltage after bypassing each module corresponding to an activated switch. Subsequently, the resulting linear equations are solved to obtain the voltage of each module in the faulty string. The technique is verified using simulation and an experimental setup for a 5 x 4 small-size PV system. Experimental and simulation results demonstrate that the technique can accurately localize faulty modules with only <inline-formula><tex-math>$N$</tex-math></inline-formula> voltage samples of the faulty string. The proposed method is robust to variations in the maximum power point tracking algorithm, ensuring faults are localized effectively in real-time.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 2","pages":"362-372"},"PeriodicalIF":2.5,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143455253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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