IEEE Journal of Photovoltaics最新文献_第10页

Three-Stage Optimization-Based Framework for Grid-Connected Sizing of a PV Power Plant System 基于三阶段优化的光伏电站并网规模优化框架

IF 3.7 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-11-01 Epub Date: 2025-08-19 DOI: 10.1109/JPHOTOV.2025.3596707

Juan Carlos Cortez;Jéssica A. A. Silva;Rody A. Gallegos H.;Marina Lavorato;Marcos J. Rider

{"title":"Three-Stage Optimization-Based Framework for Grid-Connected Sizing of a PV Power Plant System","authors":"Juan Carlos Cortez;Jéssica A. A. Silva;Rody A. Gallegos H.;Marina Lavorato;Marcos J. Rider","doi":"10.1109/JPHOTOV.2025.3596707","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3596707","url":null,"abstract":"The grid-connected sizing of a photovoltaic (PV) power plant system aims to determine the equipment and components necessary to operate and integrate PV panels into an on-grid system with compatibility, efficiency, affordability, and reliability. In this context, this article proposes a new three-stage optimization-based framework for the grid-connected sizing of a PV power plant. In Stage 1, the <inline-formula><tex-math>$k$</tex-math></inline-formula>-means clustering algorithm is utilized to determine the placement and dimensions of the inverters, as well as the number of strings and the arrangement of PV modules in strings. During Stage 2, the DC wiring is sized to facilitate the connection between the PV strings and the inverters. Finally, in Stage 3, the AC wiring is sized to connect the inverters to the power substation. Stages 2 and 3 are formulated as mixed-integer linear programming problems to minimize investment costs and reduce AC power losses. The framework is implemented using different tools and libraries, including Quantum Geographic Information System for geospatial panel placement, Python libraries such as scikit-learn for clustering, and Pyomo for modeling the optimization problem of Stages 2 and 3 with the Gurobi solver. A real-world case study of a PV power plant located in Brazil, which covers an area of 13 000 m<inline-formula><tex-math>$^{2}$</tex-math></inline-formula> and a nominal power of 1.2 MW, is used to validate the proposed framework. The results demonstrate the robustness, feasibility, and scalability of the proposed methodology.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 6","pages":"896-907"},"PeriodicalIF":3.7,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11130570","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148482067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Uncovering Structure–Performance Relationships in Organic Photovoltaics: Interpretable Machine Learning Model for Predicting the Power Conversion Efficiency 揭示有机光伏的结构-性能关系：预测功率转换效率的可解释机器学习模型

IF 3.7 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-11-01 Epub Date: 2025-08-12 DOI: 10.1109/JPHOTOV.2025.3592683

Yi Yang;Arowa Yasmeen;Ovidiu Daescu

{"title":"Uncovering Structure–Performance Relationships in Organic Photovoltaics: Interpretable Machine Learning Model for Predicting the Power Conversion Efficiency","authors":"Yi Yang;Arowa Yasmeen;Ovidiu Daescu","doi":"10.1109/JPHOTOV.2025.3592683","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3592683","url":null,"abstract":"Organic photovoltaics (OPVs) represent a promising photovoltaic technology, but the design of candidate molecules has traditionally followed a trial-and-error approach, which is inefficient. However, machine learning provides a data-informed strategy by learning from large OPV material datasets, supporting the accelerated discovery and optimization of high-performance OPV materials. In this study, we use an extreme gradient boosting (XGBoost) model to predict the density functional theory-calculated power conversion efficiency (PCE) of OPV donor materials using structural features extracted from the Harvard Photovoltaic Dataset (HOPV15) dataset. To enhance predictive performance, we select the most informative molecular fingerprints based on the averaged feature importance scores from both random forest and XGBoost. Our XGBoost model achieves state-of-the-art predictive accuracy on HOPV15 with <inline-formula><tex-math>$R^{2}$</tex-math></inline-formula> = 0.918 and RMSE = 0.302%, outperforming prior methods. Using SHapley Additive exPlanations, we identify key Morgan and PubChem substructures that influence PCE, offering interpretable insights. This framework supports accurate, explainable OPV prediction and holds promise for high-throughput screening.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 6","pages":"782-791"},"PeriodicalIF":3.7,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148486785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Postannealing in Metal–Organic Chemical Vapor Deposition Reactor: A Scalable Method for Improving InGaAsP Solar-Cell Efficiency 金属-有机化学气相沉积反应器的后镀工艺：一种提高InGaAsP太阳能电池效率的可扩展方法

IF 3.7 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-11-01 Epub Date: 2025-09-19 DOI: 10.1109/JPHOTOV.2025.3609471

Depu Ma;Hassanet Sodabanlu;Meita Asami;Kentaroh Watanabe;Masakazu Sugiyama;Yoshiaki Nakano

{"title":"Postannealing in Metal–Organic Chemical Vapor Deposition Reactor: A Scalable Method for Improving InGaAsP Solar-Cell Efficiency","authors":"Depu Ma;Hassanet Sodabanlu;Meita Asami;Kentaroh Watanabe;Masakazu Sugiyama;Yoshiaki Nakano","doi":"10.1109/JPHOTOV.2025.3609471","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3609471","url":null,"abstract":"InGaAsP solar cells with a bandgap of approximately 1.05 eV, which are lattice matched to InP substrates, generally exhibit relatively lower crystal quality and energy conversion efficiency compared with other III–V compound semiconductor solar cells, such as the GaAs solar cell. This is mainly owing to the challenges in achieving a uniform chemical composition and reducing nonradiative recombination defects during the growth process. In this study, we effectively addressed this challenge by directly performing postannealing within the metal–organic chemical vapor deposition system. Following annealing, the open-circuit voltage (<italic>VOC) and short-circuit current density (<italic>JSC) of the solar cells were improved by 38 mV and 3.84 mA/cm2, respectively. The analysis of voltage losses, along with time-resolved photoluminescence results, revealed that the improvements in <italic>VOC and <italic>JSC were attributed to the reduction of nonradiative recombination defects and enhancement of carrier lifetime, respectively. X-ray diffraction analysis showed a reduction in the full width at half maximum of the peak in annealed InGaAsP samples, indicating that annealing significantly enhanced the compositional uniformity of the material, which was likely driven by the redistribution of group-III atoms (In and Ga in InGaAsP) during the thermal annealing process. In addition, low-temperature photoluminescence results confirmed a reduction in nonradiative recombination defects, further corroborating the findings from the voltage-loss analysis. Postannealing treatments have significantly enhanced the crystal quality of InGaAsP, leading to a notable 32% improvement in the efficiency of InGaAsP solar cells in the best cases. Thus, this study highlighted annealing as an effective and scalable approach to optimizing the growth process for InGaAsP-based solar cells.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 6","pages":"814-825"},"PeriodicalIF":3.7,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148482737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IEEE Journal of Photovoltaics Publication Information IEEE光电杂志出版信息

IF 3.7 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-11-01 Epub Date: 2025-10-22 DOI: 10.1109/JPHOTOV.2025.3621263

引用次数: 0

Strategy for Enhancing the CdTe Thin Film Solar Cell Performance by Solution-Based CuCl Doping 溶液型CuCl掺杂提高CdTe薄膜太阳能电池性能的策略

IF 3.7 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-11-01 Epub Date: 2025-09-10 DOI: 10.1109/JPHOTOV.2025.3604860

Yunpu Tai;Xin Zhang;Lei Liu;Guomei Liu;Banghua Liu;Fu You;Jingquan Zhang;Lili Wu;Chebotareva Alla;Youpin Gong;Guanggen Zeng

{"title":"Strategy for Enhancing the CdTe Thin Film Solar Cell Performance by Solution-Based CuCl Doping","authors":"Yunpu Tai;Xin Zhang;Lei Liu;Guomei Liu;Banghua Liu;Fu You;Jingquan Zhang;Lili Wu;Chebotareva Alla;Youpin Gong;Guanggen Zeng","doi":"10.1109/JPHOTOV.2025.3604860","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3604860","url":null,"abstract":"Due to the excellent optical and electrical properties, CuCl is emerging as a promising material for enhancing the efficiency of CdTe solar cells. In this work, we present a low-cost, solution-based method for CuCl doping, which not only significantly reduces Cu dosage but also enhances the efficiency of Cu incorporation compared to traditional deposition techniques that are often costly and time-consuming. When CuCl was applied to a device structured as FTO/MZO/CdS/CdSe/CdTe, the experiments revealed that optimal efficiency was achieved with a CuCl volume of 300 <italic>μL and an annealing temperature of 280°C. This configuration resulted in an impressive efficiency of 17.3% (cell area = 0.24 cm2) without the use of an antireflection coating, representing nearly a 40% increase over the control cell's efficiency of 12.38% . The observed improvements can be attributed to an increase in carrier concentration and a reduction in the back contact barrier, which collectively lead to a remarkable short-circuit current density of 30.3 mA/cm2, nearing the highest level reported for Cu-doped devices in the literature.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 6","pages":"801-806"},"PeriodicalIF":3.7,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148486783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical Model of Leakage Currents in Contact Resistivity Measurements on Silicon Solar Cells 硅太阳能电池接触电阻率测量中漏电流的解析模型

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-10-31 DOI: 10.1109/JPHOTOV.2025.3620568

Wilkin Wöhler;Johannes M. Greulich;Andreas W. Bett

{"title":"Analytical Model of Leakage Currents in Contact Resistivity Measurements on Silicon Solar Cells","authors":"Wilkin Wöhler;Johannes M. Greulich;Andreas W. Bett","doi":"10.1109/JPHOTOV.2025.3620568","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3620568","url":null,"abstract":"We derive an analytical description of leakage currents in an ohmic system of two conductive layers, with current in- and outflow at two line contacts on the first layer, and current flow in the second layer induced over a resistive interface. Examples of such interfaces in the photovoltaic context include the tunnel interface of TOPCon solar cells, the high-low junction of silicon heterojunction (SHJ) solar cells, and p-n junctions for low current densities. Experimentally the modeled leakage currents are observed in measurements of transfer length method (TLM) samples of SHJ solar cells due to the finite shunt resistivity of the p-n junction. Using the new model, we find that for a typical TLM-setup with a contacting distance of <inline-formula><tex-math>$l_{text{c}}=text{1 cm}$</tex-math></inline-formula>, apparent sheet resistance reductions of 0.3, 2.6, and 9.6 <inline-formula><tex-math>$Omega$</tex-math></inline-formula> for a top layer of <inline-formula><tex-math>$R_{1}=text{100};{Omega }$</tex-math></inline-formula> occur for interface resistivities <inline-formula><tex-math>$rho _{text{c}}$</tex-math></inline-formula> of 100, 10, and 1 <inline-formula><tex-math>$text{k}Omega text{cm}^{2}$</tex-math></inline-formula>, respectively. Evaluating the measurement example by the commonly used linear regression, a twice higher contact resistivity is found in comparison to a numerical least square fit of the new model. Similar results are obtained in a synthetic data study using the solar cell simulation software Quokka3, with contact resistivity deviations of up to <inline-formula><tex-math>$text{10 m} Omega text{cm}^{2}$</tex-math></inline-formula> for the linear regression evaluation. By evaluating the same data with the new analytical model, the original simulation parameters of contact resistivity and sheet resistance are recovered with relative deviations below 0.2%.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 1","pages":"120-127"},"PeriodicalIF":2.6,"publicationDate":"2025-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145802344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

2025 Index IEEE Journal of Photovoltaics 2025索引IEEE光电学报

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-10-28 DOI: 10.1109/JPHOTOV.2025.3626191

引用次数: 0

High-Intensity UV Exposure for the Rapid Screening of Silicon Photovoltaic Architectures 高强度紫外曝光用于硅光伏结构的快速筛选

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-10-22 DOI: 10.1109/JPHOTOV.2025.3611428

Mirra M. Rasmussen;J. Diego Zubieta Sempertegui;Nicholas Moser-Mancewicz;Jonathan L. Bryan;Natasha E. Hjerrild;Kristopher O. Davis;Mariana I. Bertoni;Laura S. Bruckman;Ina T. Martin

{"title":"High-Intensity UV Exposure for the Rapid Screening of Silicon Photovoltaic Architectures","authors":"Mirra M. Rasmussen;J. Diego Zubieta Sempertegui;Nicholas Moser-Mancewicz;Jonathan L. Bryan;Natasha E. Hjerrild;Kristopher O. Davis;Mariana I. Bertoni;Laura S. Bruckman;Ina T. Martin","doi":"10.1109/JPHOTOV.2025.3611428","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3611428","url":null,"abstract":"Advanced Si photovoltaic architectures incorporate different materials and processing pathways that influence degradation modes. Ultraviolet-induced degradation (UVID) is an understudied degradation mode for advanced cell architectures and is of increasing concern to industry due to growing adoption of UV-transparent encapsulation and bifacial technologies. In order to adopt new and evolving technologies confidently, novel component materials and processing techniques must be evaluated and designed for long-term stability, in addition to the conventional design focus on efficiency. In this work, a study protocol framework is presented for the rapid screening of unencapsulated devices against UVID. Unencapsulated passivated emitter rear contact (PERC) and tunnel oxide passivated contact (TOPCon) devices were aged under different UV irradiance intensities and measured via conventional nondestructive electrical characterization methods to assess performance degradation. Based on the results, protocol efficacy and recommendations for further study are discussed. This work is part of a broader effort to develop rapid screening processes that cut across architectures and exposure conditions to aid module manufacturers in vetting new materials choices for long-term stability.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 1","pages":"142-149"},"PeriodicalIF":2.6,"publicationDate":"2025-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145802368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Reliability of Advanced Nodes” IEEE电子设备学报“先进节点的可靠性”特刊征文

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-10-22 DOI: 10.1109/JPHOTOV.2025.3621371

引用次数: 0

IEEE Journal of Photovoltaics Information for Authors IEEE光电期刊，作者信息

IF 2.6 3区工程技术

IEEE Journal of Photovoltaics Pub Date : 2025-10-22 DOI: 10.1109/JPHOTOV.2025.3621367

引用次数: 0