IEEE Journal of Photovoltaics最新文献

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Lithography-Free Mesa Isolation of III–V Solar Cells Through Laser Ablation 激光烧蚀III-V型太阳能电池无光刻台面隔离
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-12-02 DOI: 10.1109/JPHOTOV.2024.3496484
Theresa E. Saenz;Daniel Curry;AJ Gray;Ryan Muzzio;Jackson W. Schall;Myles A. Steiner
{"title":"Lithography-Free Mesa Isolation of III–V Solar Cells Through Laser Ablation","authors":"Theresa E. Saenz;Daniel Curry;AJ Gray;Ryan Muzzio;Jackson W. Schall;Myles A. Steiner","doi":"10.1109/JPHOTOV.2024.3496484","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3496484","url":null,"abstract":"Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III–V solar cells. In this work, we explore femtosecond laser ablation as an alternative to contact photolithography and wet chemical etching for mesa isolation. We demonstrate both GaAs and GaInP solar cells mesa-isolated by femtosecond laser ablation with minimal to no loss in solar cell performance. We show the best results with a 400 fs UV pulsed laser and a short clean-up etch that also serves as a contact layer removal etch.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"110-116"},"PeriodicalIF":2.5,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of High Monochromatic Radiation on the Electrical Performance of CIGS Solar Cell 高单色辐射对CIGS太阳能电池电性能的影响
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-28 DOI: 10.1109/JPHOTOV.2024.3492281
C. Casu;M. Buffolo;A. Caria;C. De Santi;N. Trivellin;A. Cester;S. Rampino;M. Bronzoni;M. Mazzer;G. Meneghesso;E. Zanoni;M. Meneghini
{"title":"Effect of High Monochromatic Radiation on the Electrical Performance of CIGS Solar Cell","authors":"C. Casu;M. Buffolo;A. Caria;C. De Santi;N. Trivellin;A. Cester;S. Rampino;M. Bronzoni;M. Mazzer;G. Meneghesso;E. Zanoni;M. Meneghini","doi":"10.1109/JPHOTOV.2024.3492281","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3492281","url":null,"abstract":"In this article, we investigate the optically induced degradation of Cu(InGa)Se\u0000<sub>2</sub>\u0000 (CIGS) solar cells subjected to monochromatic laser irradiation. The devices under test are bifacial CIGS solar cells, fabricated on fluorine-doped SnO\u0000<sub>2</sub>\u0000 glass substrates. The electrical properties under dark and illumination conditions were characterized before laser exposure. The analysis of the current–voltage characteristics indicated that defect-assisted carrier transport dominates within the space charge region. Continuous laser exposure at constant optical power caused a decrease in open-circuit voltage (\u0000<italic>V</i>\u0000<sub>oc</sub>\u0000). The study of the dark current–voltage curves highlights a change in the saturation current (\u0000<italic>I<sub>S</sub></i>\u0000) and ideality factor (\u0000<italic>n</i>\u0000), whose increment follows a square-root dependence on time. This behavior is attributed to diffusion of Na ions toward the junction. Conversely, the \u0000<italic>V</i>\u0000<sub>oc</sub>\u0000 decay (which is correlated with the turn-\u0000<sc>on</small>\u0000 voltage decrease in dark \u0000<italic>I–V</i>\u0000 curve) is ascribed to a light-induced defect generation that enhances leakage current at the CdS/CIGS interface.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"73-78"},"PeriodicalIF":2.5,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10770815","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of 2-D/3-D Mixed-Dimension Tin Perovskite Solar Cells and Their Prospects Under Bifacial Configuration 二维/三维混合维锡钙钛矿太阳能电池的性能及双面结构研究
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-27 DOI: 10.1109/JPHOTOV.2024.3497135
Atanu Purkayastha;Arun Tej Mallajosyula
{"title":"Performance of 2-D/3-D Mixed-Dimension Tin Perovskite Solar Cells and Their Prospects Under Bifacial Configuration","authors":"Atanu Purkayastha;Arun Tej Mallajosyula","doi":"10.1109/JPHOTOV.2024.3497135","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3497135","url":null,"abstract":"This work focuses on the design and development of lead-free halide perovskite solar cells (PSCs). Here, 3-D and 2-D/3-D mixed-dimension tin PSCs have been fabricated by adding phenylethylammonium iodide (PEAI) in varying quantities. A maximum power conversion efficiency (PCE\u0000<sub><inline-formula><tex-math>$|$</tex-math></inline-formula>MAX</sub>\u0000) of 11.03% has been obtained at a PEAI concentration of 15%, with indium tin oxide (ITO) and Ag as the front and rear electrodes, respectively. Addition of PEAI has also improved the stability of the solar cells. Using the measured properties from this device, monofacial and bifacial designs for the same material stack has been simulated by using suitable rear electrodes, without changing the front electrode. Silvaco 2-D TCAD software has been used for this purpose. With Ag and ITO as rear electrodes, the monofacial designs gave PCE\u0000<sub><inline-formula><tex-math>$|$</tex-math></inline-formula> MAX</sub>\u0000 values of 17.94% and 12.79%, respectively. On the other hand, the bifacial design with a concurrent AM1.5G illumination of 1 sun intensity, the device gave a PCE\u0000<sub><inline-formula><tex-math>$|$</tex-math></inline-formula> MAX</sub>\u0000 of 26.55%. The study also examined the impact of albedo effects from various reflecting surfaces on the performance of this bifacial perovskite solar cell (BPSC). Notably, snow albedo positively influenced efficiency of the BPSC, increasing it by 38.85% compared with that of monofacial perovskite solar cell (MPSC) with Ag rear electrode. Conversely, albedos from soil, seawater, and pond water resulted in lower efficiencies, even falling below those of MPSCs with Ag back electrodes. These results indicate that bifacial design has the potential to be an efficient and cost-effective solution for tin-based PSCs.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"54-60"},"PeriodicalIF":2.5,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SnO2-Ti3C2 Blends as Electron Transport Layer for Efficient and Easily Fabricated Planar Perovskite Solar Cells SnO2-Ti3C2共混物在平面钙钛矿太阳能电池中的电子传输层研究
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-27 DOI: 10.1109/JPHOTOV.2024.3496475
Yaling Wang;Yi Ding;Liying Yang;Shougen Yin;Sheng Xu;Haina Zhu;Hong Ge
{"title":"SnO2-Ti3C2 Blends as Electron Transport Layer for Efficient and Easily Fabricated Planar Perovskite Solar Cells","authors":"Yaling Wang;Yi Ding;Liying Yang;Shougen Yin;Sheng Xu;Haina Zhu;Hong Ge","doi":"10.1109/JPHOTOV.2024.3496475","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3496475","url":null,"abstract":"In this work, the SnO\u0000<sub>2</sub>\u0000-Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000 hybrid electron transport layer (ETL) was prepared by incorporating two-dimensional Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000-MXene into SnO\u0000<sub>2</sub>\u0000 and appropriate ultraviolet (UV) ozone treatment. The synergistic effect of Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000 introduction and UV ozone treatment on the charge transport capacity of SnO\u0000<sub>2</sub>\u0000 ETL, interface properties of ETL/perovskite, perovskite morphology, and device performance was systematically investigated. The results show that the introduction of Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000 does not affect the morphology and transmittance of SnO\u0000<sub>2</sub>\u0000 ETL. The perovskite films based on SnO\u0000<sub>2</sub>\u0000-Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000 are not only dense, but also have smaller surface roughness, more uniform, and larger grain size, even penetrating the entire perovskite film. The surface oxidation of Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000 induced by UV-ozone treatment enhanced the charge transport capacity of ETL. The electron extraction and charge transfer at the interface between SnO\u0000<sub>2</sub>\u0000-Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000 ETL and perovskite are higher, and carrier recombination is effectively suppressed. Perovskite solar cells (PSCs) based on SnO\u0000<sub>2</sub>\u0000-Ti\u0000<sub>3</sub>\u0000C\u0000<sub>2</sub>\u0000 ETL have larger charge recombination impedance and higher electron mobility, mainly due to enhanced ETL charge transport and optimization of interface properties. The short-circuit current (\u0000<italic>J</i>\u0000sc) and filling factor (FF) of PSCs are increased by 5% and 7% respectively, delivering a champion device with a relatively high FF of 79.38% and high power conversion efficiency of 19.52%, as well as good stability. Thus, this study provides a simple and effective method for the preparation of efficient and repeatable PSCs and paves the way for the industrialization of PSCs to a certain extent.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"61-66"},"PeriodicalIF":2.5,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photon Recycling and Efficiency Limit of a Silicon Solar Cell With a Specular and a Diffusive Surface 具有镜面和漫射表面的硅太阳能电池的光子回收和效率限制
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-26 DOI: 10.1109/JPHOTOV.2024.3496520
Mykhaylo Evstigneev
{"title":"Photon Recycling and Efficiency Limit of a Silicon Solar Cell With a Specular and a Diffusive Surface","authors":"Mykhaylo Evstigneev","doi":"10.1109/JPHOTOV.2024.3496520","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3496520","url":null,"abstract":"Analytical expressions for photon reabsorption probability in a solar cell, in which one of the surfaces, front or back, is specular and the other one is diffusive are obtained within the ray optics approximation. Due to the free carrier absorption, the light-generated current and the radiative recombination coefficient depend on the electron-hole pair density within the cell. Accurate analytical approximations that describe this effect are derived. These formulae are applied to evaluate the limit efficiency of a c-Si solar cells, whose one surface is specular and the other is diffusive, under AM1.5G irradiation at \u0000<inline-formula><tex-math>$ 25,^{circ }$</tex-math></inline-formula>\u0000C. For the solar cells with specular front and diffusive back surfaces, the efficiency is maximized at the cell thickness of 110 \u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000m and has a value of 29.4%. In the configuration with diffusive front surface, the limiting efficiency of 29.5% is achieved at the optimal thickness of 100 \u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000m regardless of the texturing type of the back surface.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"95-104"},"PeriodicalIF":2.5,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Enhancement of InGaN Laser Photovoltaic Cell With AlGaN Strain Compensation Layer Irradiated by 450 nm Laser 450 nm激光辐照AlGaN应变补偿层对InGaN激光光伏电池性能的增强
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-22 DOI: 10.1109/JPHOTOV.2024.3495024
Heng-Sheng Shan;Yi-Xin Wang;Cheng-Ke Li;Ning Wang;Xiao-Ya Li;Shu-Fang Ma;Bing-She Xu
{"title":"Performance Enhancement of InGaN Laser Photovoltaic Cell With AlGaN Strain Compensation Layer Irradiated by 450 nm Laser","authors":"Heng-Sheng Shan;Yi-Xin Wang;Cheng-Ke Li;Ning Wang;Xiao-Ya Li;Shu-Fang Ma;Bing-She Xu","doi":"10.1109/JPHOTOV.2024.3495024","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3495024","url":null,"abstract":"A high-efficiency indium gallium nitride (InGaN) laser photovoltaic cell (LPVC) was demonstrated to achieve a photoelectric conversion efficiency (η) of 23.09% by incorporating an AlGaN strain compensation layer (SCL) grown on a (0001)-oriented patterned sapphire substrate (PSS). The photoluminescence spectra confirm that the peak splitting is reduced after the insertion of AlGaN SCL, indicating a more uniform distribution of In. In addition, the full width at half maximum of the sample is narrowed, indicating that the crystal quality is improved after the insertion of AlGaN SCL. The X-ray diffraction analysis reveals the effective modulation of strain relaxation in InGaN materials by the AlGaN SCL, enhancing steepness of the interface between the well and the barrier in the active region compared with materials without the AlGaN SCL. Furthermore, Raman analysis shows an additional release of GaN compressive stress in InGaN materials, providing full validation for the stress regulation model from introducing the AlGaN SCL. Finally, introducing material parameters into Silvaco software resulted in simulation and experimental errors of less than 2%, the critical role of SCL in efficiency improvement is validated. Valuable insights on optimizing device design for high-efficiency InGaN LPVCs are provided.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"105-109"},"PeriodicalIF":2.5,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancing the Cost- and Time-Effectiveness of Field PV Module Inspection by UV-Fluorescence Imaging 利用紫外荧光成像提高光伏组件现场检测的成本和时效性
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-18 DOI: 10.1109/JPHOTOV.2024.3492286
Claudia Buerhop;Eugene Ernest van Dyk;Frederik J. Vorster;Oleksandr Stroyuk;Oleksandr Mashkov;Jacqueline L. Crozier McCleland;Monphias Vumbugwa;Jens Hauch;Ian Marius Peters
{"title":"Enhancing the Cost- and Time-Effectiveness of Field PV Module Inspection by UV-Fluorescence Imaging","authors":"Claudia Buerhop;Eugene Ernest van Dyk;Frederik J. Vorster;Oleksandr Stroyuk;Oleksandr Mashkov;Jacqueline L. Crozier McCleland;Monphias Vumbugwa;Jens Hauch;Ian Marius Peters","doi":"10.1109/JPHOTOV.2024.3492286","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3492286","url":null,"abstract":"This case study highlights the potential of UV fluorescence imaging as an emerging photovoltaic (PV) module inspection tool allowing the cost and time of the field inspection to be considerably reduced and opening a gateway to high-throughput operation. The application of UV fluorescence imaging is advanced beyond its reported capabilities by combining this technique with near-infrared absorption spectroscopy and electrical measurements. This combined approach allows for the identification and assessment of polymer backsheets and encapsulants, i.e., detection of polymer-related features (e.g., degradation, corrosion) as well as other anomalies (e.g., cell cracks and hot cells) with otherwise inaccessible cost- and time-effectiveness. In particular, 1890 PV modules in a 2 MWp PV power station show critical issues, including inner backsheet cracks and an insulation resistance below 1 MΩ identified for 40% of inspected strings and assigned to specific backsheet type populations. With an average throughput of 400–500 modules per hour, the present approach demonstrates a large potential for acceleration and cost-reduction of the PV plant inspection. It provides significant insights into system performance enabling proactive operation and maintenance of PV systems.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"30-39"},"PeriodicalIF":2.5,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Ensemble CNN Framework With Weighted Feature Fusion for Fault Diagnosis of Photovoltaic Modules Using Thermography Images 基于加权特征融合的光伏组件热成像故障诊断集成CNN框架
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-18 DOI: 10.1109/JPHOTOV.2024.3492283
Nadia Drir;Adel Mellit;Maamar Bettayeb
{"title":"A Novel Ensemble CNN Framework With Weighted Feature Fusion for Fault Diagnosis of Photovoltaic Modules Using Thermography Images","authors":"Nadia Drir;Adel Mellit;Maamar Bettayeb","doi":"10.1109/JPHOTOV.2024.3492283","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3492283","url":null,"abstract":"The global increase in the adoption of photovoltaic (PV) energy accentuates the imperative of maintaining system efficiency amidst environmental variabilities and faults. The processes of identifying, classifying, and rectifying defects are critical for ensuring the long-term sustainability and performance integrity of PV installations. This article introduces an innovative ensemble convolutional neural network (CNN) model that employs weighted feature fusion to enhance accuracy beyond what is achievable with a singular CNN architecture. By utilizing three proficient CNNs—VGG16, ResNet, and MobileNet—the fusion of deep features extracted from the last layers of these networks’ augments performance, while also capitalizing on the integration of data from multiple CNNs with distinct configurations. This methodology was applied to a publicly available infrared thermography imaging dataset, which includes 12 distinct defects. The proposed models have been subsequently trained, validated, and tested on this dataset. The outcomes indicate a substantial enhancement in the accuracy of defect classification compared to individual CNN models, with an average accuracy of 96%. This approach underscores its utility in defect identification, particularly demonstrating the capacity of the ensemble CNN to classify defects with high precision","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"146-154"},"PeriodicalIF":2.5,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Quality PEI/Ag/PEI-Zn Semitransparent Electrode for Efficient ITO-Free Flexible Organic Solar Cells and Perovskite Solar Cells 用于高效无ito柔性有机太阳能电池和钙钛矿太阳能电池的高品质PEI/Ag/PEI- zn半透明电极
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-12 DOI: 10.1109/JPHOTOV.2024.3483257
Hong Lu;Lin Xu;Zihao Wei;Zhanzheng Wang;Keqiang Li;Hanqing Zhang;Changle Yi;Huanran Sun;Juan Wang;Fei Chen;Hainam Do;Jiang Huang
{"title":"High-Quality PEI/Ag/PEI-Zn Semitransparent Electrode for Efficient ITO-Free Flexible Organic Solar Cells and Perovskite Solar Cells","authors":"Hong Lu;Lin Xu;Zihao Wei;Zhanzheng Wang;Keqiang Li;Hanqing Zhang;Changle Yi;Huanran Sun;Juan Wang;Fei Chen;Hainam Do;Jiang Huang","doi":"10.1109/JPHOTOV.2024.3483257","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3483257","url":null,"abstract":"To achieve significant advancements in flexible organic and perovskite solar cells, it is imperative to develop a flexible semitransparent electrode that possesses higher light transmittance, lower square resistance, and a flexible bending quality. In this research, we propose a high-quality flexible polyethyleneimine (PEI)/Ag/PEI-Zn electrode on common polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and Polydimethylsiloxane (PDMS) flexible substrates to enhance the transmittance of conventional Ag ultrathin film electrodes in the visible wavelength range. The power conversion efficiency (PCE) of flexible OSC devices based on Poly[(2,6-(4,8-bis(5-(2-ethylhexyl)-4-fluorothiophen-2-yl)benzo [1,2-b:4,5-b']dithiophene)-co-(1,3-di(5-thienyl)-5,7-bis(2-ethylhex yl)benzo[1,2-c:4,5-c']dithiophene-4,8-dione)] (PBDB-T-SF): IT-4F active layer achieves an optimal performance by annealing the PEI-Zn layer at 130 °C through chelating Zn ions with PEI. The PEI-Zn layer serves as a high-quality electron transporting property and surface modifying layer on Ag film. Also, the PEI/Ag/PEI-Zn electrode exhibited remarkable mechanical durability of flexible organic solar cells (FOSCs) compared with indium tin oxiden (ITO)-based devices in consecutive bending experiments. PEI/Ag/PEI-Zn electrode was also applied in flexible perovskite solar cells. Their PCE performance reaches as high as 19.24% and also maintains 73% of its initial value after 500 bending cycles, which is much better than ITO-based flexible devices. Above all, both enhancement in light transmittance and PCE performance of both FOSCs and FPSCs underscores the superior properties of PEI/Ag/PEI-Zn flexible electrodes.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"46-53"},"PeriodicalIF":2.5,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ResAG-UNet: A Novel Residual Attention Gated UNet for Cloud Segmentation in Sky Image ResAG-UNet:一种用于天空图像云分割的残余注意门控UNet
IF 2.5 3区 工程技术
IEEE Journal of Photovoltaics Pub Date : 2024-11-11 DOI: 10.1109/JPHOTOV.2024.3485188
Anil Kumar;Yashwant Kashyap;Praveen Divakar
{"title":"ResAG-UNet: A Novel Residual Attention Gated UNet for Cloud Segmentation in Sky Image","authors":"Anil Kumar;Yashwant Kashyap;Praveen Divakar","doi":"10.1109/JPHOTOV.2024.3485188","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2024.3485188","url":null,"abstract":"Cloud cover significantly impacts the solar radiation reaching the Earth's surface, thereby influencing the efficiency and output of solar energy systems. Consequently, an accurate cloud segmentation approach is crucial for understanding fluctuations in solar irradiance in real time and future ahead. Such understanding aids in optimizing energy production and grid management. In this article, we designed a novel deep learning architecture called Residual Attention Gated-UNet (ResAG-UNet) for accurate cloud segmentation. The proposed ResAG-UNet integrates residual blocks in both the encoder and decoder paths, along with an attention mechanism in the decoder path. The inclusion of residual blocks facilitates faster gradient movement due to skip pathways across them, thereby enhancing training efficiency. Furthermore, the incorporation of an attention module in ResAG-UNet allows for the learning of attention coefficients for various pixels. This mechanism actively highlights crucial characteristics while suppressing less significant ones in the cloud image. The proposed ResAG-UNet model is assessed and compared with benchmark segmentation models using NITK and SWIMSEG sky datasets. The proposed approach yields mean IOU, precision, recall, F1 score, accuracy of (0.8616, 0.8826), (0.9761,0.9965), (0.9863,0.9764), (0.9237,0.9613), and (0.9424, 0.9651) on the NITK and SWIMSEG sky datasets, respectively.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"181-190"},"PeriodicalIF":2.5,"publicationDate":"2024-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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