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1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)最新文献

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Automated WLR testing of HBT's HBT的自动WLR测试
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874099
E. Sabin, S. Scarpulla, S. Dacus
{"title":"Automated WLR testing of HBT's","authors":"E. Sabin, S. Scarpulla, S. Dacus","doi":"10.1109/GAASRW.1999.874099","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874099","url":null,"abstract":"This paper describes how a standard probing system was modified to allow automated wafer level reliability (WLR) testing of heterojunction bipolar transistors (HBT's). It discusses how the thermally induced chuck movement was compensated for using a program written in LabView software. It also discusses how to set up gravity probes to allow wafer movement while keeping the needles on the pads. The paper then presents the emitter resistance result from Gummel plots obtained with the automated HBT tester.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131156356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Reliability testing of 0.1 /spl mu/m GaAs pseudomorphic HEMT MMIC amplifiers 0.1 /spl mu/m GaAs伪晶HEMT MMIC放大器可靠性测试
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874166
D. Leung, Y. Chou, C. Wu, R. Kono, J. Scarpulla, R. Lai, M. Hoppe, D. Streit
{"title":"Reliability testing of 0.1 /spl mu/m GaAs pseudomorphic HEMT MMIC amplifiers","authors":"D. Leung, Y. Chou, C. Wu, R. Kono, J. Scarpulla, R. Lai, M. Hoppe, D. Streit","doi":"10.1109/GAASRW.1999.874166","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874166","url":null,"abstract":"Reliability testing was completed on 0.1 /spl mu/m gate length GaAs pseudomorphic HEMT MMICs. The circuit used for reliability testing is the ALH225C, a 2-stage Q band balanced amplifier. This MMIC was fabricated on both power and low noise substrate profiles. Both versions of the circuit were tested. The lifetests were conducted with accelerated DC bias and temperature conditions in order to attain failure in a reasonable length of time. Approximately 152 MMICs were used for step stress and lifetesting at 255, 270 and 285/spl deg/C ambient temperature. Despite the aggressive bias used in this lifetest, the estimated lifetimes at 125/spl deg/C for this process are high. The parameters extracted from this study for the high power MBE profile are MTF (125/spl deg/C) of 6/spl times/10/sup 9/ hours, with activation energy of 1.7 eV, and for the low noise MBE profile are MTF (125/spl deg/C) of 7/spl times/10/sup 7/ hours, with activation energy of 1.3 eV.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115902269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Hydrogen sensitivity of GaAs HEMT amplifiers: the effect of bias mode GaAs HEMT放大器的氢灵敏度:偏置模式的影响
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874167
D. Eng, J. Scarpulla
{"title":"Hydrogen sensitivity of GaAs HEMT amplifiers: the effect of bias mode","authors":"D. Eng, J. Scarpulla","doi":"10.1109/GAASRW.1999.874167","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874167","url":null,"abstract":"The effect of hydrogen incorporation is well known to degrade the performance of GaAs HEMT transistors. The main source of hydrogen is in the plated internal metal surfaces of a hermetic enclosure used to package GaAs MMICs. We have found a new circuit technique for hydrogen mitigation, which may be useful under certain circumstances - use of a current regulation scheme for each transistor in a MMIC. The value of this method is that even under extremely high levels of hydrogen and accelerated temperature conditions where the HEMTs are expected to fully saturate with hydrogen, the net effect on RF gain degradation can be minimized to a tolerably low level.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129854960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs 栅极和凹槽结垢对AlGaAs/GaAs功率hfet栅极-漏极击穿和热电子可靠性的影响
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874153
R. Menozzi, D. Dieci, G. Sozzi, T. Tomasi, C. Lanzieri
{"title":"The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs","authors":"R. Menozzi, D. Dieci, G. Sozzi, T. Tomasi, C. Lanzieri","doi":"10.1109/GAASRW.1999.874153","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874153","url":null,"abstract":"The gate-drain breakdown voltage (BV/sub DG/) ranks among the most significant figures of merit for microwave and millimeter-wave FETs, particularly high-power ones. Both an off-state and an on-state BV/sub DG/ can be defined and measured, the former being more or less a diode property, while the latter is linked with impact ionization in the device channel. To be sure, since the breakdown voltage is typically defined fixing a certain threshold value for the gate reverse current, the indication it provides is valuable, but assuming a direct relationship between BV/sub DG/ and the device reliability under high field conditions would be erroneous. This work speculates on the non-trivial correlation existing between the breakdown voltage and the device hot electron reliability and degradation, taking as a test vehicle power Al/sub 0.25/Ga/sub 0.75/As/GaAs HFETs with different gate lengths.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115180250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Channel temperature measurement of GaAs devices using an atomic force microscope 用原子力显微镜测量砷化镓器件的通道温度
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874092
W. Anderson, J. Mittereder, J. Roussos
{"title":"Channel temperature measurement of GaAs devices using an atomic force microscope","authors":"W. Anderson, J. Mittereder, J. Roussos","doi":"10.1109/GAASRW.1999.874092","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874092","url":null,"abstract":"We have used an atomic force microscope (AFM) to measure the channel temperature of GaAs pseudomorphic high electron mobility transistors (PHEMTs) and GaAs metal-semiconductor field effect transistors (MESFETs) by employing a temperature sensitive tip. The improvements with this method are to greatly expand the range over which the channel temperature can be measured and to improve the spatial resolution into the submicrometer range. To our knowledge, this is the first report of an accurate, quantitative measurement of the channel temperature of a compound semiconductor device using an AFM.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116365007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis 利用低频噪声和漏极电流瞬态分析研究GaAs功率mesfet射频寿命试验
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874163
N. Saysset-Malbert, B. Lambert, C. Maneux, N. Labat, A. Touboul, Y. Danto, P. Huguet, P. Auxemery, F. Garat
{"title":"Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis","authors":"N. Saysset-Malbert, B. Lambert, C. Maneux, N. Labat, A. Touboul, Y. Danto, P. Huguet, P. Auxemery, F. Garat","doi":"10.1109/GAASRW.1999.874163","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874163","url":null,"abstract":"The purpose of this work is to evaluate the impact of RF life-test under gain compression on ion-implanted power MESFETs by LF gate noise and drain noise analysis combined with drain current transient spectroscopy (DCTS). While the devices under test belong to a mature technology, such an evaluation aims at reaching space program requirements in terms of reliability assessment.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"169 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131549709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
ESD sensitivity study of various diode protection circuits implemented in a production 1 /spl mu/m GaAs HBT technology 1 /spl mu/m GaAs HBT生产技术中实现的各种二极管保护电路的ESD灵敏度研究
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874179
F. Yamada, A. Oki, E. Kaneshiro, M. Lammert, A. Gutierrez-Aitken, J. Hyde
{"title":"ESD sensitivity study of various diode protection circuits implemented in a production 1 /spl mu/m GaAs HBT technology","authors":"F. Yamada, A. Oki, E. Kaneshiro, M. Lammert, A. Gutierrez-Aitken, J. Hyde","doi":"10.1109/GAASRW.1999.874179","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874179","url":null,"abstract":"Advanced GaAs Heterojunction Bipolar Transistors (HBTs) featuring smaller junction areas have an increased susceptibility to damage from Electrostatic Discharge (ESD) events and this is a topic of concern. In this paper, we examined the ESD sensitivity of various on-chip ESD-protection networks designed using base-collector (BC) junction diodes and Schottky diodes from a production 1 /spl mu/m GaAs/AIGaAs HBT process. The purpose of this work was to measure and evaluate the ESD sensitivity of various protection networks and determine their effectiveness as protection devices.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129360866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Reliability performance of components and ICs from a production 1 /spl mu/m GaAs HBT process 生产1 /spl mu/m GaAs HBT工艺的组件和ic的可靠性性能
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874171
F. Yamada, A. Oki, D. Streit, B. Hikin, E. Kaneshiro, M. Lammert, L. Tran, T. Block, P. Grossman, J. Scarpulla, A. Gutierrez-Aitken
{"title":"Reliability performance of components and ICs from a production 1 /spl mu/m GaAs HBT process","authors":"F. Yamada, A. Oki, D. Streit, B. Hikin, E. Kaneshiro, M. Lammert, L. Tran, T. Block, P. Grossman, J. Scarpulla, A. Gutierrez-Aitken","doi":"10.1109/GAASRW.1999.874171","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874171","url":null,"abstract":"We report on the reliability performance of our advanced production 1 /spl mu/m GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT) technology featuring HBTs with thinner Be-doped base layer, smaller emitter dimensions and higher current density (Jc) operation than our current production process. Reliability characteristics of discrete Npn HBTs, Schottky diodes, NiCr thin-film resistors (TFRs), trimmable CerMet TFRs and a HBT integrated circuit (IC) are presented. The purpose of this work was to qualify a new process technology for space/defense and commercial applications. The intent of this paper is to report the robustness of Be-doped HBTs at higher Jc operation and the high level of reliability achieved in an IC fabricated using this new process. Additionally, this paper provides a reference on reliability of passive IC components with compositional features similar to that commonly implemented in industry.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128291550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Step-stress accelerated testing in ion implanted GaAs self-aligned gate MESFETs 离子注入GaAs自对准栅mesfet的阶跃应力加速测试
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874095
F. Gao, P. Ersland
{"title":"Step-stress accelerated testing in ion implanted GaAs self-aligned gate MESFETs","authors":"F. Gao, P. Ersland","doi":"10.1109/GAASRW.1999.874095","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874095","url":null,"abstract":"In this paper, we present and discuss the reliability results on M/A-COM's Self-Aligned Gate MESFETs (or SAGFETs) using the step-stress accelerated life testing technique. This technique is of interest because it allows us to quickly obtain approximate product reliability and aging information in weeks, rather than months of intensive activities as normally required from constant stress tests. Device wear-out mechanisms can be identified, and a rough estimate of activation energy E/sub a/ and mean-time-to-failure (MTTF) can be calculated within a substantially shorter period and with fewer efforts. Therefore we can employ this technique to quickly compare a new process with the old process.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126974345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal excursion accelerating factors [GaAs reliability testing] 热偏移加速因子[砷化镓可靠性测试]
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874177
W. Roesch
{"title":"Thermal excursion accelerating factors [GaAs reliability testing]","authors":"W. Roesch","doi":"10.1109/GAASRW.1999.874177","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874177","url":null,"abstract":"For more than a decade, the focus of GaAs reliability testing has been on high temperature life testing. Several failure mechanisms are highly accelerated by temperature, so this methodology has produced data that is easy to analyze and straightforward to predict applicable lifetimes - albeit very long lifetimes. To the contrary, GaAs devices actually fail for quite different failure mechanisms during typical use. This study will address a failure mechanism accelerated by thermal excursions instead of high temperatures. Thermal excursion mechanisms are ones accelerated by temperature cycling, thermal shock, or simulation of infrared (IR) reflow.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125879127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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