F. Yamada, A. Oki, D. Streit, B. Hikin, E. Kaneshiro, M. Lammert, L. Tran, T. Block, P. Grossman, J. Scarpulla, A. Gutierrez-Aitken
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Reliability performance of components and ICs from a production 1 /spl mu/m GaAs HBT process
We report on the reliability performance of our advanced production 1 /spl mu/m GaAs/AlGaAs Heterojunction Bipolar Transistor (HBT) technology featuring HBTs with thinner Be-doped base layer, smaller emitter dimensions and higher current density (Jc) operation than our current production process. Reliability characteristics of discrete Npn HBTs, Schottky diodes, NiCr thin-film resistors (TFRs), trimmable CerMet TFRs and a HBT integrated circuit (IC) are presented. The purpose of this work was to qualify a new process technology for space/defense and commercial applications. The intent of this paper is to report the robustness of Be-doped HBTs at higher Jc operation and the high level of reliability achieved in an IC fabricated using this new process. Additionally, this paper provides a reference on reliability of passive IC components with compositional features similar to that commonly implemented in industry.
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