Step-stress accelerated testing in ion implanted GaAs self-aligned gate MESFETs

Abstract

In this paper, we present and discuss the reliability results on M/A-COM's Self-Aligned Gate MESFETs (or SAGFETs) using the step-stress accelerated life testing technique. This technique is of interest because it allows us to quickly obtain approximate product reliability and aging information in weeks, rather than months of intensive activities as normally required from constant stress tests. Device wear-out mechanisms can be identified, and a rough estimate of activation energy E/sub a/ and mean-time-to-failure (MTTF) can be calculated within a substantially shorter period and with fewer efforts. Therefore we can employ this technique to quickly compare a new process with the old process.