Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis

Abstract

The purpose of this work is to evaluate the impact of RF life-test under gain compression on ion-implanted power MESFETs by LF gate noise and drain noise analysis combined with drain current transient spectroscopy (DCTS). While the devices under test belong to a mature technology, such an evaluation aims at reaching space program requirements in terms of reliability assessment.