利用低频噪声和漏极电流瞬态分析研究GaAs功率mesfet射频寿命试验

1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI:10.1109/GAASRW.1999.874163

N. Saysset-Malbert, B. Lambert, C. Maneux, N. Labat, A. Touboul, Y. Danto, P. Huguet, P. Auxemery, F. Garat

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引用次数: 3

摘要

本工作的目的是通过结合漏极电流瞬态光谱(DCTS)的低频栅极噪声和漏极噪声分析来评估增益压缩下射频寿命试验对离子注入功率mesfet的影响。虽然测试设备属于成熟技术，但这种评估旨在达到空间计划在可靠性评估方面的要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis

The purpose of this work is to evaluate the impact of RF life-test under gain compression on ion-implanted power MESFETs by LF gate noise and drain noise analysis combined with drain current transient spectroscopy (DCTS). While the devices under test belong to a mature technology, such an evaluation aims at reaching space program requirements in terms of reliability assessment.

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1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)

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