发布求助
文献互助 智能选刊 最新文献

1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)最新文献

筛选
英文 中文
Preventing degradation of GaAs devices by the use of getter 利用吸气剂防止砷化镓器件退化
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874168
R. Mohanty, K. Gilleo
{"title":"Preventing degradation of GaAs devices by the use of getter","authors":"R. Mohanty, K. Gilleo","doi":"10.1109/GAASRW.1999.874168","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874168","url":null,"abstract":"Hermetically sealed semiconductor devices containing gallium arsenide (GaAs) and RF absorbers, utilizing industry gate metallization structures have been shown to leach out hydrogen in ambient as well as environmental conditioning which poison and shorten the life of the device. This paper describes manufacturing and application of getter for hydrogen, moisture and particulate to solve problem of degradation due to these contaminants. A brief history describing sources of hydrogen and mechanisms for device degradation by hydrogen is also presented in this paper.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133146224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
RF overdrive experiments on 0.5 /spl mu/m power pHEMTs 0.5 /spl mu/m功率phemt的射频超速实验
1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459) Pub Date : 1999-10-17 DOI: 10.1109/GAASRW.1999.874136
V. Kaper, P. Ersland
{"title":"RF overdrive experiments on 0.5 /spl mu/m power pHEMTs","authors":"V. Kaper, P. Ersland","doi":"10.1109/GAASRW.1999.874136","DOIUrl":"https://doi.org/10.1109/GAASRW.1999.874136","url":null,"abstract":"The effect of large signal drive on long-term device reliability was investigated on M/A-COM 0.5 /spl mu/m power pHEMTs with 600 /spl mu/m gate periphery by stressing devices on-wafer at normal gate and accelerated drain bias conditions with various RF input drives in the high compression regime (RF overdrive condition). Complete DC characterization and input/output power measurements were performed every 5 minutes during the stress.","PeriodicalId":433600,"journal":{"name":"1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122127076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信