2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

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Comparison of finite element approaches for Si wafer buckling calculation 硅晶片屈曲计算的有限元方法比较
C. Sautot, J. Craveur, Mohamed Boutaleb, F. Roqueta
{"title":"Comparison of finite element approaches for Si wafer buckling calculation","authors":"C. Sautot, J. Craveur, Mohamed Boutaleb, F. Roqueta","doi":"10.1109/EuroSimE56861.2023.10100748","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100748","url":null,"abstract":"During the manufacturing process of the wafer, in particular during temperature changes, because of the different properties of the deposited films, the wafer can buckle, which induces a change of shape. This bifurcation can be anticipated analytically and by numerical computation via the finite element method. The models released allow in particular to compute the value of the critical load, the temperature at which the film/substrate system buckles, and to calculate the behaviour of the wafer after the bifurcation. A common numerical approach is to implement an additional perturbation force to trigger buckling. This method is non-physical and here compared to another method, this one physical but less commonly implemented in models, which consists in considering a geometrically imperfect wafer. This second approach uses the buckling modes of the wafer, previously calculated, in order to generate a realistic geometric defect and allows the calculation of the post-bifurcation path. The comparison shows that both numerical methods reached the same results.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126189557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Power Modules Using Containers Filled With Phase Change Materials as Device Top Interconnection for Power Peak Management 采用相变材料填充容器作为器件顶部互连的功率峰值管理电源模块设计
R. Khazaka, Y. Avenas, R. Hanna, S. Azzopardi
{"title":"Design of Power Modules Using Containers Filled With Phase Change Materials as Device Top Interconnection for Power Peak Management","authors":"R. Khazaka, Y. Avenas, R. Hanna, S. Azzopardi","doi":"10.1109/EuroSimE56861.2023.10100726","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100726","url":null,"abstract":"In some applications, it can be useful to use occasionally power semiconductor devices above their nominal current for brief durations in order to deliver the additional requested power for the electric system. For such conditions, this study aims to design a new class of power modules with integrated phase change material (PCM) in a container serving as top device interconnection. This solution does not alter the cooling under nominal conditions where the bottom side of the power devices is conventionally used. During the over power duration, the PCM melts and absorbs rapidly the excessive heat. Hence, the increase of the junction temperature (Tj) in abnormal conditions can be slowed down. For a specified mission profile, the impact of the Cu to PCM vol. ratio on the Tj is evaluated as well as the impact of the contact area between the Cu and the PCM. Moreover, the optimal thickness of the container is defined. Finally, in order to evaluate the effectiveness of the solution, a comparative analysis with other conventional assemblies presenting the same weight is achieved under various heat transfer coefficients.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"518 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133661786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TC Reliability Enhancement Technology for SSD with Low Temperature Solder Paste Material 基于低温锡膏材料的固态硬盘TC可靠性增强技术
Junghoon Kim, Yong Jung, Eunho Oh, Y. Cinar, Jong-Seol Jeong, Sungki Lee, Jonggyu Park
{"title":"TC Reliability Enhancement Technology for SSD with Low Temperature Solder Paste Material","authors":"Junghoon Kim, Yong Jung, Eunho Oh, Y. Cinar, Jong-Seol Jeong, Sungki Lee, Jonggyu Park","doi":"10.1109/EuroSimE56861.2023.10100767","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100767","url":null,"abstract":"The present study relates to the acquisition of optimal design and reliability enhancement technology using new solder paste material in the development process of new products in order to enter the SSD market with rapid customer response. As SAC paste material is reduced to about 70°C, the customer is able to reduce power and cost, CO2 emissions (35%), and PCB/Substrate warpage 50%. Based on these advantages, customer wants to lead a new industry change and are hoping for the generalization of the application of LTS solder paste material. In general, package causes process failure due to warpage at high and low temperature [1]. Warpage can be reduced by more than 50% from reflow peak temperature of LTS material. However, material bonding technology of SAC ball and LTS material SnBi paste of package is required. It is possible to improve the warpage of SSD set and array by lowering 70°C, but there is a disadvantage that the TAT of the reflow process increases. The SMT reflow profile is mainly managed by dividing it into ramp-up, soak range, and peak temp. In addition, it is necessary to build an additional assembly process line for customer’s LTS paste material application. Various DOE evaluations of peak temp. and duration were performed with the goal of reflow profile optimization. Under the TC 0-125°C conditions of DRAM module products, the reliability was weak due to hot tearing effect in close proximity to melting temp. 138°C of Bi paste. First, BMR 42.1% was confirmed under 180°C and 50sec conditions, and 900cycle defect occurred. Second, to improve this, the duration of the peak temperature section was increased from 50 to 120sec. BMR was confirmed to be 53.8% at 180°C and 120sec, and 1, 200cycle passed. Under the TC -40-85°C conditions of SSD M.2 products, the existing SAC paste failed at 2, 000cycle, but the LTS paste of S/PB material passed at 3, 024cycle and it has been improved by about 50% compared to mass production solder paste.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123108680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Leadframe-Epoxy Moulding Compound Adhesion: a Micromechanics-driven Investigation 引线框架-环氧成型复合材料粘接:微观力学驱动的研究
Alessandro Della Porta, S. Mariani, M. Rovitto, L. Andena, Samuele Zalaffi
{"title":"Leadframe-Epoxy Moulding Compound Adhesion: a Micromechanics-driven Investigation","authors":"Alessandro Della Porta, S. Mariani, M. Rovitto, L. Andena, Samuele Zalaffi","doi":"10.1109/EuroSimE56861.2023.10100792","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100792","url":null,"abstract":"A typical reliability issue of electronic packages is the decohesion between the encapsulant material, the Epoxy Molding Compound (EMC), and the leadframe. As the EMC is a microstructured composite material, the present computational study is aimed at understanding the influence of the EMC microstructure on the macroscopic mechanical and adhesive properties. Statistical Volume Elements (SVEs) are employed to this purpose, with a random arrangement of spherical particles of varying diameter to represent the filler volume fraction and size distribution. Mechanical properties of the neat polymeric matrix are obtained from experimental data relevant to the EMC through an inverse homogenization scheme, and the effect of a varying filler content is investigated. Finally, microstructural effects on the adhesion are studied with micro-scale models of the leadframe-matrix-filler system, accounting for the leadframe-matrix adhesion through a cohesive approach. The effects of filler content, substrate roughness, and intrinsic adhesive properties on the effective traction-separation law are assessed.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134588791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of Undercut due to Isotropic Etch while Releasing on the Performance of TPoS Resonators 释放时各向同性蚀刻对TPoS谐振器性能的影响
J. Bijay, K. N. Bhadri Narayanan, A. Sarkar, A. DasGupta, D. Nair
{"title":"Effect of Undercut due to Isotropic Etch while Releasing on the Performance of TPoS Resonators","authors":"J. Bijay, K. N. Bhadri Narayanan, A. Sarkar, A. DasGupta, D. Nair","doi":"10.1109/EuroSimE56861.2023.10100769","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100769","url":null,"abstract":"This paper reports and validates the effect of additional loss due to the isotropic etch used to release the extensional mode thin piezoelectric on silicon (TPoS) resonators. Devices fabricated to operate at a resonant frequency around 1 GHz are kept at varying times in vapor HF to remove the buried oxide, thereby changing the additional area etched. When devices designed with different geometries are present in the same wafer, the etching times differ, causing more undercuts than required in some of the devices. The Quality factor (Q) calculated from the measured transmission characteristics is used to derive a semi-analytical model for the additional loss due to undercut. The total quality factor of these devices is estimated after adding other loss mechanisms with the help of simulations and is validated with measured experimental data from our group as well as those found in the literature. The Q predicted using this model matches the measured data for state-of-the-art devices with different frequencies, dimensions, and materials.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133793674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization and simulation of delamination on package-level considering sub-critical interfacial fracture-parameters under cyclic loading. 循环载荷下考虑亚临界界面断裂参数的包层分层表征与模拟。
R. Kniely, J. Heilmann, F. Huber, B. Wunderle
{"title":"Characterization and simulation of delamination on package-level considering sub-critical interfacial fracture-parameters under cyclic loading.","authors":"R. Kniely, J. Heilmann, F. Huber, B. Wunderle","doi":"10.1109/EuroSimE56861.2023.10100778","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100778","url":null,"abstract":"Delamination is a significant risk to the reliability of optical sensor packages. This is especially the case when undergoing reliability stress tests, such as cyclic loading. Characterization of the fatigue behavior of different materials in use is difficult challenging due to the limited access to samples that represent the actual packaging process. To address this challenges, a special fatigue bending test setup was used to generate crack growth characteristics for the interface between silicon tiles and non-conductive die-attach adhesive. A virtual crack closure technique was applied to calculate the strain energy release rate using the finite element method. Using the data, a fatigue crack growth rate curve was generated, to show the sub-critical crack propagation and determine the constants of Paris’ law. In addition, successfully conducted tests on samples to analyze the interface between injection-molded liquid crystal polymer to nonconductive adhesive and silicon tiles to Ag-filled conductive adhesive are presented in this work.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116776636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal-based Direct Multi-jet Impingement Cooling Solution for Autonomous Driving High-Performance Vehicle Computer (HPVC) 用于自动驾驶高性能车载计算机(HPVC)的金属基直接多射流冲击冷却解决方案
Reza Moloudi, T. Grün, Willem Verleysen, B. Vandevelde, S. G. Cleuren, D. May, B. Wunderle
{"title":"Metal-based Direct Multi-jet Impingement Cooling Solution for Autonomous Driving High-Performance Vehicle Computer (HPVC)","authors":"Reza Moloudi, T. Grün, Willem Verleysen, B. Vandevelde, S. G. Cleuren, D. May, B. Wunderle","doi":"10.1109/EuroSimE56861.2023.10100758","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100758","url":null,"abstract":"A metal 3D-printed high performance multi-jet impingement cooling solution for enabling thermal management of high-power electronics is presented for level-5 autonomous driving. In this paper, we describe the concept, metal 3D printing fabrication and experimental characterization to demonstrate the proof-of-concept of direct liquid cooling of high-power components dissipating up to 300 W.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114750573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards System-level Simulation of an Electromagnetic Energy Harvester Model via Equivalent Circuit Extraction from ANSYS Maxwell 3D 基于ANSYS Maxwell 3D等效电路提取的电磁能量采集器系统级仿真
C. Yuan, D. Hohlfeld, T. Bechtold
{"title":"Towards System-level Simulation of an Electromagnetic Energy Harvester Model via Equivalent Circuit Extraction from ANSYS Maxwell 3D","authors":"C. Yuan, D. Hohlfeld, T. Bechtold","doi":"10.1109/EuroSimE56861.2023.10100816","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100816","url":null,"abstract":"Energy harvesting, a solution to provide a lifetime power supply to wireless systems, has attracted wide attention in the last decades. In this work, we will introduce the workflow of modeling an electromagnetic energy harvester model in finite element-based software ANSYS Maxwell 3D. Such a device converts kinetic energy into electrical energy. Then we will present the methodology of generating an equivalent circuit model and importing it into system-level simulation software ANSYS Twin Builder. The accurate and compact equivalent circuit model enables the interaction of the electromagnetic energy harvester model with both electrical and mechanical components.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123876092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure Analysis of Sintered Layers in Power Modules Using Laser Lock-in Thermography 用激光锁定热成像技术分析功率模块烧结层的失效
S. Panahandeh, D. May, C. Grosse-Kockert, B. Wunderle, M. A. Ras
{"title":"Failure Analysis of Sintered Layers in Power Modules Using Laser Lock-in Thermography","authors":"S. Panahandeh, D. May, C. Grosse-Kockert, B. Wunderle, M. A. Ras","doi":"10.1109/EuroSimE56861.2023.10100762","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100762","url":null,"abstract":"This research focuses on the application of lock-in thermography (LIT) for inspecting sintered chip interconnections, which are commonly used in electronic components. By utilizing laser LIT technology, this study showcases the ability of LIT to detect delamination in the sintered layer between copper pad and SiC chip, without the need for spray coating. The proposed LIT system offers an efficient solution for failure analysis (FA) of industrial electronic components that have thin layers, low emissivity surfaces, and high thermal conductivity, which often produce thermal failure contrast even below the noise level of infrared (IR) camera systems. The findings of this study highlight the potential of LIT technology for industrial inspections of electronic components and offer an alternative to existing inspection methods.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123213052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of Viscoelastic Properties on Package Warpage Prediction 粘弹性特性对包装翘曲预测的影响
Daniela Spini, M. Rovitto
{"title":"Impact of Viscoelastic Properties on Package Warpage Prediction","authors":"Daniela Spini, M. Rovitto","doi":"10.1109/EuroSimE56861.2023.10100768","DOIUrl":"https://doi.org/10.1109/EuroSimE56861.2023.10100768","url":null,"abstract":"Warpage is a critical issue concerning electronic plastic packages and is mainly related to the epoxy molding compound (EMC). The molding process requires a large change in temperature, creating thermal gradients and mismatches which can lead to thermal stresses generating package deformation. Problems in controlling warpage will result in assembly yield loss and later in reliability issues, such as delamination and solder joint failures.Therefore, a solution to improve the reliability of packages is the prediction of warpage by employing finite element analysis (FEA). However, the standard FEA treats only linear elastic material properties lacking on the consideration of EMC viscoelasticity. With the aid of moldflow simulation tool, this work gives a comprehensive assessment to anticipate package warpage behavior with a validated model which considers the viscous and elastic properties of EMC by applying the Generalized Maxwell Model. The study is supported by experimental analysis as well as numerical modelling.","PeriodicalId":425592,"journal":{"name":"2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123490723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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