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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings最新文献

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CMOS OTA with improve performance 提高性能的CMOS OTA
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496357
Shi-Cai Qin, Xiangluan Jia, Yong-Ping Wang
{"title":"CMOS OTA with improve performance","authors":"Shi-Cai Qin, Xiangluan Jia, Yong-Ping Wang","doi":"10.1109/TENCON.1995.496357","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496357","url":null,"abstract":"A new CMOS OTA which consists of a linearized source-coupled pair cascaded by a conventional CMOS OTA biased in sub-threshold region is presented. SPICE simulation results show that for /spl plusmn/5 V supply voltage, and over /spl plusmn/3 V input range, the maximum non-linear error is /spl plusmn/0.3% and the transconductance varies I/sub abc/ linearly over a wide I/sub abc/ range.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133979340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and its response characteristics of MELO accelerometer MELO加速度计的制备及其响应特性
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496328
J. Jungho Pak, S. Yi, Y. Sung, G. Neudeck
{"title":"Fabrication and its response characteristics of MELO accelerometer","authors":"J. Jungho Pak, S. Yi, Y. Sung, G. Neudeck","doi":"10.1109/TENCON.1995.496328","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496328","url":null,"abstract":"This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting in a local silicon-on-insulator (SOI) structure, resulting in high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30 g.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133193923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical analysis on the automotive electronic compass sensor 汽车电子罗盘传感器的理论分析
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496419
S. Yi, J.H. Park, Y. K. Sung
{"title":"Theoretical analysis on the automotive electronic compass sensor","authors":"S. Yi, J.H. Park, Y. K. Sung","doi":"10.1109/TENCON.1995.496419","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496419","url":null,"abstract":"In this analysis, the B-H curve was attained and assumed by Z and R type curves. The B/sub max/, H/sub c/, the driving frequency and the demagnetizing factors are considered as parameters to solve a numerical solution. As the driving frequency increased from 4 kHz to 12 kHz-step 4 kHz-the output voltages increased from 147 mV to 446 mV in Z-type. The detection error due to the rotation angles are limited to +3 degrees. In the R type curve, the output voltages are in the range of 145 mV to 354 mV. As the coercive force H/sub c/, is increased, the output voltage increased slightly. Considering the demagnetizing factor, the output voltages are reduced, but the detection error is decreased greatly.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130040535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The voltage (current) controlled frequency modulation effect in DUBAT device DUBAT器件中电压(电流)控制的调频效果
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496422
W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng
{"title":"The voltage (current) controlled frequency modulation effect in DUBAT device","authors":"W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng","doi":"10.1109/TENCON.1995.496422","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496422","url":null,"abstract":"In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128830932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A heuristic approach to datapath scheduling of complex conditional structure 复杂条件结构数据路径调度的一种启发式方法
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496361
S. Nakamura, A. Yamada, I. Shirakawa
{"title":"A heuristic approach to datapath scheduling of complex conditional structure","authors":"S. Nakamura, A. Yamada, I. Shirakawa","doi":"10.1109/TENCON.1995.496361","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496361","url":null,"abstract":"This paper proposes a new heuristic approach to the time-constrained datapath scheduling with complex conditional structures. This algorithm intends to select the best of all solutions attained by the iterative refinement process. Experimental results demonstrate that this algorithm attains optimal results in most cases and can be applied to a practical scale of datapath scheduling.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129770628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new scheme for complete cancellation of charge injection distortion in second generation switched-current circuits 一种完全消除第二代开关电流电路电荷注入畸变的新方案
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496353
X. Zeng, C. Tse, P. Tang
{"title":"A new scheme for complete cancellation of charge injection distortion in second generation switched-current circuits","authors":"X. Zeng, C. Tse, P. Tang","doi":"10.1109/TENCON.1995.496353","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496353","url":null,"abstract":"This paper begins with an analysis of the charge injection error in the second-generation current memory cell. By combining the circuit-replication technique and the n-step principle, a new scheme for simultaneously cancelling both signal-dependent and signal-independent charge injection errors in second-generation switched-current circuits is proposed. SPICE simulations are used to verify the feasibility and effectiveness of the proposed cell for tackling the charge injection problem. Major merits of the proposed cell include capability to meet high precision requirements and applicability to any second-generation switched-current circuit configuration.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129794497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A constrained terminals over-the-cell router 一个受限终端的蜂窝路由器
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496364
P. Shew, Jong-Shen Shei, Pei-Yuug Hsiao
{"title":"A constrained terminals over-the-cell router","authors":"P. Shew, Jong-Shen Shei, Pei-Yuug Hsiao","doi":"10.1109/TENCON.1995.496364","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496364","url":null,"abstract":"We present a new routing model to further extend the routing capacity over the cells. We call this constrained terminals over-the-cell channel routing problem (CTOTC-CRP). Based on this new model, our heuristic algorithm achieved a routing area reduction of 71% for the MCNC benchmark PRIMARY I example using three-layer over-the-cell routing.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124196514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of Ge implanted SiGe-channel p-MOSFETs Ge注入sige沟道p- mosfet的仿真
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496427
G. Niu, G. Ruan
{"title":"Simulation of Ge implanted SiGe-channel p-MOSFETs","authors":"G. Niu, G. Ruan","doi":"10.1109/TENCON.1995.496427","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496427","url":null,"abstract":"This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO/sub 2/-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123021951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-shallow junction formation using cobalt silicide as diffusion source 以硅化钴为扩散源形成超浅结
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496394
S. Kal, I. Kasko, H. Ryssel
{"title":"Ultra-shallow junction formation using cobalt silicide as diffusion source","authors":"S. Kal, I. Kasko, H. Ryssel","doi":"10.1109/TENCON.1995.496394","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496394","url":null,"abstract":"Ultra-thin CoSi/sub 2/ films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi/sub 2/ on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (x/sub j/<100 nm) were characterized by fabricating diodes.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117339301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides 在砷化镓(GaAs)量子阱波导上，杂质引起的无序产生了AlGaAs和InGaAs的侧向光约束
1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI: 10.1109/TENCON.1995.496342
A.T.H. Li, K. Lo, E. Li
{"title":"Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides","authors":"A.T.H. Li, K. Lo, E. Li","doi":"10.1109/TENCON.1995.496342","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496342","url":null,"abstract":"The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1021 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121712971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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