在砷化镓(GaAs)量子阱波导上，杂质引起的无序产生了AlGaAs和InGaAs的侧向光约束

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496342

A.T.H. Li, K. Lo, E. Li

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引用次数: 0

摘要

在AlGaAs/GaAs量子阱光波导上采用杂质诱导无序技术提供横向光约束。采用改进的傅里叶分解方法对模态传播常数和场分布进行了分析。单模工作区域用量子阱层厚度表示。

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Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides

The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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