DUBAT器件中电压(电流)控制的调频效果

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496422

W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng

{"title":"DUBAT器件中电压(电流)控制的调频效果","authors":"W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng","doi":"10.1109/TENCON.1995.496422","DOIUrl":null,"url":null,"abstract":"In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The voltage (current) controlled frequency modulation effect in DUBAT device\",\"authors\":\"W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng\",\"doi\":\"10.1109/TENCON.1995.496422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文首次阐述了压(流)控调频效应在三种终端压控负阻器件之一的双基极晶体管(DUBAT)上的原理和实现。

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The voltage (current) controlled frequency modulation effect in DUBAT device

In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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