The voltage (current) controlled frequency modulation effect in DUBAT device

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496422

W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng

引用次数: 0

Abstract

In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.

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DUBAT器件中电压(电流)控制的调频效果

本文首次阐述了压(流)控调频效应在三种终端压控负阻器件之一的双基极晶体管(DUBAT)上的原理和实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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