以硅化钴为扩散源形成超浅结

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496394

S. Kal, I. Kasko, H. Ryssel

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引用次数: 0

摘要

采用RTA法在10 nm的Si上溅射沉积Co，制备了超薄CoSi/sub /薄膜。研究了As离子在单晶Si上注入CoSi/ sub2 /薄层的分布，以及在炉内退火和RTP过程中向Si衬底外扩散的情况。通过制造二极管表征了超浅结(x/sub j/<100 nm)。

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Ultra-shallow junction formation using cobalt silicide as diffusion source

Ultra-thin CoSi/sub 2/ films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi/sub 2/ on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (x/sub j/<100 nm) were characterized by fabricating diodes.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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