Fabrication and its response characteristics of MELO accelerometer

Abstract

This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting in a local silicon-on-insulator (SOI) structure, resulting in high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30 g.