Ge注入sige沟道p- mosfet的仿真

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496427

G. Niu, G. Ruan

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摘要

本文介绍了Ge注入sige沟道p- mosfet的工艺可行性分析和数值模拟。在一定的有效注入范围内，导电孔与SiO/sub - 2/-Si界面峰之间的平均距离表明存在最佳掩膜厚度。阈值电压随锗剂量的增加和有效投影范围的减小而增大。

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Simulation of Ge implanted SiGe-channel p-MOSFETs

This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO/sub 2/-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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