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Undoped SiGe FETs with metal-insulator-semiconductor contacts 具有金属-绝缘体-半导体触点的未掺杂SiGe场效应管
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-12-29 DOI: 10.23919/SNW.2017.8242314
Liangyu Chen, Yu-Feng Hsieh, K. Kao
{"title":"Undoped SiGe FETs with metal-insulator-semiconductor contacts","authors":"Liangyu Chen, Yu-Feng Hsieh, K. Kao","doi":"10.23919/SNW.2017.8242314","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242314","url":null,"abstract":"With relaxed SiGe, this work elaborates the correlation of semiconductor band edges and source-drain metal workfunction for the electrical characteristics of p- and n-channel FETs based on numerical simulations. For a given high workfunction source-drain metal, it is found that the on-current, threshold voltage and off-current of p-channel devices increase monotonously with the Ge mole fraction. The trend of the n-channel devices, however, seems more complicated, but it can be interpreted by the band edge variation of SiGe alloy.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126981808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Program/erase speed and data retention trade-off in negative capacitance versatile memory 负电容通用存储器中程序/擦除速度和数据保留的权衡
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-12-29 DOI: 10.23919/SNW.2017.8242317
C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang
{"title":"Program/erase speed and data retention trade-off in negative capacitance versatile memory","authors":"C. Fan, Y. Chiu, Chien Liu, G. Liou, W. Lai, Yi-Ru Chen, Tun-Jen Chang, Wan-Hsin Chen, Chun‐Hu Cheng, Chun-Yen Chang","doi":"10.23919/SNW.2017.8242317","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242317","url":null,"abstract":"In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131687857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Revisiting room-temperature 1.54 μιη photoluminescence of ErOx centers in silicon at extremely low concentration 重新考察极低浓度下硅中ErOx中心的室温1.54 μιη光致发光
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-12-29 DOI: 10.23919/SNW.2017.8242319
E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii
{"title":"Revisiting room-temperature 1.54 μιη photoluminescence of ErOx centers in silicon at extremely low concentration","authors":"E. Prati, M. Celebrano, L. Ghirardini, P. Biagioni, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abdelghafar, M. Yano, T. Tanii","doi":"10.23919/SNW.2017.8242319","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242319","url":null,"abstract":"Luminescence of erbium in silicon has been intensively explored in the past in the high power emission regime, but its employment for manufacturability of active components for silicon photonics proved unfeasible. We explore the room-temperature photoluminescence (PL) at the telecomm wavelength of very low implantation doses of ErOx in Si for accessing few photon regime towards single photon emission. We achieve countable photon regime and we assess the lower-bound number of detectable emission centers by micron scale implanted dots, whose emission is collected by an inverted confocal microscope.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123851424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect 利用沟道耗尽效应改善多层PNPN无结晶体管的电学特性和可靠性
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-12-29 DOI: 10.23919/SNW.2017.8242290
Ming-Huei Lin, Yi-Jia Shih, Chien Liu, Y. Chiu, C. Fan, G. Liou, Chun‐Hu Cheng, Chun-Yen Chang
{"title":"Improved electrical characteristics and reliability of multi-stacking PNPN junctionless transistors using channel depletion effect","authors":"Ming-Huei Lin, Yi-Jia Shih, Chien Liu, Y. Chiu, C. Fan, G. Liou, Chun‐Hu Cheng, Chun-Yen Chang","doi":"10.23919/SNW.2017.8242290","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242290","url":null,"abstract":"This work demonstrates a novel multi-stacking PNPN channel structure for nanowire junctionless transistor. With the multi-PNPN channel structure, the design of multi-stacking PNPN junctions can promote the p-type channel layer to achieve fully depleted channel, accompanied with the excellent electrical performances on a steep subthreshold swing of 77 mV/dec and a high on/off current ratio of >107. Besides, utilizing with the constant-voltage-stress measurement, the multi-PNPN channel junctionless FETs with a robust stress reliability was demonstrated.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131132655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Atom probe study of erbium and oxygen co-implanted silicon 铒氧共注入硅的原子探针研究
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-04 DOI: 10.23919/SNW.2017.8242316
Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai
{"title":"Atom probe study of erbium and oxygen co-implanted silicon","authors":"Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai","doi":"10.23919/SNW.2017.8242316","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242316","url":null,"abstract":"It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to <sup>4</sup>I<inf>13/2</inf> →<sup>4</sup>I<inf>15/2</inf> transition of Er<sup>3+</sup>. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129255870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigations on dynamic characteristics of ferroelectric Hf02 based on multi-domain interaction model 基于多域相互作用模型的铁电材料Hf02动态特性研究
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-04 DOI: 10.23919/SNW.2017.8242274
Kyungmin Jang, Nozomu Ueyama, M. Kobayashi, T. Hiramoto
{"title":"Investigations on dynamic characteristics of ferroelectric Hf02 based on multi-domain interaction model","authors":"Kyungmin Jang, Nozomu Ueyama, M. Kobayashi, T. Hiramoto","doi":"10.23919/SNW.2017.8242274","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242274","url":null,"abstract":"We have investigated dynamic characteristics of ferroelectric Hf0<inf>2</inf> (FE-HfÓ<inf>2</inf>) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO<inf>2</inf> can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-HfO<inf>2</inf> revealed that dynamic term (ρ<inf>i</inf>) of Landau-Khalatnikov equation in MD FE-HfO<inf>2</inf> is not constant but depends on V<inf>in</inf> due to domain dynamics.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"C-27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126483426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing 28nm全耗尽SOI技术:量子计算的低温控制电子技术
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-04 DOI: 10.23919/SNW.2017.8242338
H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barrai, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. de Franceschi, M. Vinet
{"title":"28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing","authors":"H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barrai, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. de Franceschi, M. Vinet","doi":"10.23919/SNW.2017.8242338","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242338","url":null,"abstract":"This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128419067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
Graphene-ZnO:N Schottky junction based thin film transistor 基于石墨烯- zno:N肖特基结的薄膜晶体管
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI: 10.23919/SNW.2017.8242332
S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee
{"title":"Graphene-ZnO:N Schottky junction based thin film transistor","authors":"S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee","doi":"10.23919/SNW.2017.8242332","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242332","url":null,"abstract":"Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117093637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experimental proof of resonant tunneling in MIEIS devices based on ultra-thin high-k oxides and intrinsic quantum well formation 基于超薄高k氧化物和本征量子阱形成的MIEIS器件共振隧穿的实验证明
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI: 10.23919/SNW.2017.8242295
J. Reyes, Hector Manuel Uribe Vargas
{"title":"Experimental proof of resonant tunneling in MIEIS devices based on ultra-thin high-k oxides and intrinsic quantum well formation","authors":"J. Reyes, Hector Manuel Uribe Vargas","doi":"10.23919/SNW.2017.8242295","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242295","url":null,"abstract":"Resonant tunneling diodes (RTD) are widely used in nano electronics due to their nonlinear properties. In this work, Metal-Insulator-Insulator-Insulator-Semiconductor (MIIIS) devices were fabricated using a gate stack of atomic-layer deposited (ALD) high-k oxides and experimental proof of Resonant Tunneling was obtained due to three Negative Differential Resistance (NDR) zones.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114617650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dopant-segregated metal source tunnel field-effect transistors with schottky barrier and band-to-band tunneling 具有肖特基势垒和带间隧道的掺杂隔离金属源隧道场效应晶体管
2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI: 10.23919/SNW.2017.8242293
C. Shih, Ting-Shiuan Kang, Yu-Hsuan Chen, Hung-Jin Teng, Nguyen Dang Chien
{"title":"Dopant-segregated metal source tunnel field-effect transistors with schottky barrier and band-to-band tunneling","authors":"C. Shih, Ting-Shiuan Kang, Yu-Hsuan Chen, Hung-Jin Teng, Nguyen Dang Chien","doi":"10.23919/SNW.2017.8242293","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242293","url":null,"abstract":"Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114824062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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