S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee
{"title":"基于石墨烯- zno:N肖特基结的薄膜晶体管","authors":"S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee","doi":"10.23919/SNW.2017.8242332","DOIUrl":null,"url":null,"abstract":"Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Graphene-ZnO:N Schottky junction based thin film transistor\",\"authors\":\"S. Heo, Y.J. Kim, C. Kim, S. Lee, H. Lee, H. Hwang, J. Noh, B. Lee\",\"doi\":\"10.23919/SNW.2017.8242332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242332\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Graphene-ZnO:N Schottky junction based thin film transistor
Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this device. All device fabrication processes completed at a temperature below 200°C will provide a unique advantage in the flexible display applications. The projected performance estimated by PSPICE using the experimental device parameters confirmed that this device is suitable for voltage programming pixel driver circuits.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
