Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Yudai Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, Y. Nagai
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Atom probe study of erbium and oxygen co-implanted silicon
It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/2 →4I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.
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