H. Bohuslavskyi, S. Barraud, M. Cassé, V. Barrai, B. Bertrand, L. Hutin, F. Arnaud, P. Galy, M. Sanquer, S. de Franceschi, M. Vinet
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28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent Vth controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.
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