2017 Silicon Nanoelectronics Workshop (SNW)最新文献

{"title":"Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics","authors":"M. Kuo, B. J. Liu, T. L. Huang, H. Lin, Pei-Wen Li","doi":"10.23919/SNW.2017.8242330","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242330","url":null,"abstract":"We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400–1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103–108A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for Pin = 6nW−1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132529933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Front matter","authors":"Kim Gerdes, Christopher D. Manning","doi":"10.1137/1.9781611975321.fm","DOIUrl":"https://doi.org/10.1137/1.9781611975321.fm","url":null,"abstract":"This conference was conceived in 1991 when a small group of individuals envisioned how virtual reality, then in its first era of widespread enthusiasm, might transform medicine by immersing physicians, students, and patients in data more completely. They predicted that interactive learning tools might better engage medical students by assessing real-time performance and customizing lessons in sync. Simulation could enhance the \"see one, do one, teach one\" model with the repetition that athletes and musicians used to perfect their skills. After training on simulators, novice caregivers could tend to their first patients with expertise they'd gained from making many previous errors that did no harm. In addition, they imagined that visualizing patient data in 3D and 4D would give physicians the power to diagnose more accurately and strategize more precise therapies. Tissues, organs, and systems would be color coded, highlighted, and viewed in motion from multiple angles, revealing previously hidden features and relationships. Computers would join the clinical team. Psychotherapy presented yet another promising application for VR. Within controlled virtual environments, patients might revisit traumatic experiences or confront phobias. Images would arouse emotions more intensely than words, possibly resulting in more complete healing. And, from pain management to Parkinson's, VR also gave researchers hope as a new tool to aid physical rehabilitation. Although the VR boom of the early '90s faded when technical obstacles repeatedly delayed progress, researchers who understood the technology's potential kept working. Medical applications improved slowly and steadily; obstacles were overcome with much creativity and little fanfare. This volume, like its predecessors, is the product of these researchers' lasting commitment to better patient care and medical education. In the past couple years, we've witnessed a remarkable VR renaissance, which must feel gratifying to those pioneers who stayed the course while VR was out of fashion. Heavily funded by the entertainment industry, sleek and relatively inexpensive gear is entering the market and being utilized in healthcare. To replace the clunky headsets of the first VR boom - often better in theory than in practice - are devices that patients, clinicians, and students can use gracefully and intuitively. It took a generation, but we are now seeing more and more applications that fulfill that initial vision of medicine transformed by the ability to immerse oneself in data. This conference has endured with the support and encouragement of its Organizing Committee. To it and to the researchers who have shared their passion and hard work at this conference: thank you for all you've contributed in the last 25 years. James D. Westwood Aligned Management Associates, Inc.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132598448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on random telegraph noise of gate-ail-around poly-Si junctionless nanowire transistors","authors":"Chen-Chen Yang, K. Peng, Yung-Chen Chen, Horng-Chih Lin, Pei-Wen Li","doi":"10.23919/SNW.2017.8242289","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242289","url":null,"abstract":"In this work we study the random telegraph noise (RTN) characteristics of short-channel gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistors. The test devices were fabricated with I-line-based lithography in combination with novel spacer-etching techniques for aggressively shrinking the channel dimension. Based on the tiny nanowire channel and short-channel length, we are able to detect clear RTN signals as the gate voltage is sufficiently large. Location of the trap responsible for the RTN is estimated to be 1.13 nm within the gate oxide away from the oxide/channel interface.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132776002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The guideline on designing face-tunneling FET for large-scale-device applications in IoT","authors":"E. Hsieh, J. Lee, M. H. Lee, S. Chung","doi":"10.23919/SNW.2017.8242268","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242268","url":null,"abstract":"A thorough understanding on how to design and to manufacture a face-tunneling TFET (f-TFET) has been provided. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, f-TFET can be enhanced in its current. This work shows I0„ of f-TFET with one-order magnitude I„n enhancement than that of point-TFET(control), and the longer the gate length is, the higher the becomes. However, from experimental results, S.S. of f-TFET is a little worse than that of control and shows strong dependency on temperature because of dominance of trap-assisted tunneling. To understand how traps affect Ion of f-TFET, the charge-pumping measurement is utilized to examine trap distributions in the tunneling region. The results show that the channel/source interfacial traps degrade the performance of f-TFET, however, with careful treatment of the epi-process of f-TFET, this device with face-tunneling shows great potential for future IoT applications.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128753750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices","authors":"C. Hsueh, T. L. Huang, K. Peng, M. Kuo, H. Lin, Pei-Wen Li","doi":"10.23919/SNW.2017.8242320","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242320","url":null,"abstract":"We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127421136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigations on dynamic characteristics of ferroelectric Hf02 based on multi-domain interaction model","authors":"Kvungmin Jang, Nozomu Ueyama, M. Kobayashi, T. Hiramoto","doi":"10.23919/snw.2017.8242275","DOIUrl":"https://doi.org/10.23919/snw.2017.8242275","url":null,"abstract":"We have investigated dynamic characteristics of ferroelectric Hf0<inf>2</inf> (FE-Hf0<inf>2</inf>) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO<inf>2</inf> can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-Hfö<inf>2</inf> revealed that dynamic term (ρ<inf>i</inf>) of Landau-Khalatnikov equation in MD FE-HfO<inf>2</inf> is not constant but depends on V<inf>in</inf> due to domain dynamics.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125614302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}