具有肖特基势垒和带间隧道的掺杂隔离金属源隧道场效应晶体管

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242293

C. Shih, Ting-Shiuan Kang, Yu-Hsuan Chen, Hung-Jin Teng, Nguyen Dang Chien

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引用次数: 1

摘要

金属结工程和隧道场效应结构是解决未来晶体管技术中功耗问题的两种主要技术。本文研究了金属源隧道场效应晶体管的通断开关。利用源功函数和掺杂剂偏析两个主要因素来优化亚阈值摆幅和导通电流，使其成为理想的节能器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dopant-segregated metal source tunnel field-effect transistors with schottky barrier and band-to-band tunneling

Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies. This work explores the on-off switching of metal source tunnel field-effect transistors. Two prime factors, source workfunction and dopants segregation, are utilized to optimize the subthreshold swing and on-current for serving as ideal energy-efficient devices.

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2017 Silicon Nanoelectronics Workshop (SNW)

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